WO2009054097A1 - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

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Publication number
WO2009054097A1
WO2009054097A1 PCT/JP2008/002809 JP2008002809W WO2009054097A1 WO 2009054097 A1 WO2009054097 A1 WO 2009054097A1 JP 2008002809 W JP2008002809 W JP 2008002809W WO 2009054097 A1 WO2009054097 A1 WO 2009054097A1
Authority
WO
WIPO (PCT)
Prior art keywords
ctd
cts
signal
electrode
storage capacities
Prior art date
Application number
PCT/JP2008/002809
Other languages
English (en)
French (fr)
Inventor
Atsushi Komai
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2009054097A1 publication Critical patent/WO2009054097A1/ja
Priority to US12/708,945 priority Critical patent/US8174088B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　各蓄積容量Ｃｔｄ，Ｃｔｓには、対応する垂直信号線の信号に応じた信号が蓄積され、当該蓄積された信号が所定の水平信号線へ供給される。蓄積容量Ｃｔｄ，Ｃｔｓは行方向に交互に順次並設される。各蓄積容量Ｃｔｄ，Ｃｔｓは、信号電極をなす電極層２１と、固定電位電極をなす上側電極層２３及び下側電極層２８を有する。各蓄積容量Ｃｔｄ，Ｃｔｓの信号電極は互いに電気的に独立する。各蓄積容量Ｃｔｄ，Ｃｔｓの固定電位電極は互いに電気的に接続され、グランド等に接続される。電極層２３，２８間を接続するコンタクトホール２６ａ，２６ｂは、互いに隣接する蓄積容量Ｃｔｄ，Ｃｔｓの電極層２１同士の間に、それらの対向領域の５２％以上に及ぶように、設けられる。
PCT/JP2008/002809 2007-10-26 2008-10-06 固体撮像素子 WO2009054097A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/708,945 US8174088B2 (en) 2007-10-26 2010-02-19 Solid state imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007278672A JP5145866B2 (ja) 2007-10-26 2007-10-26 固体撮像素子
JP2007-278672 2007-10-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/708,945 Continuation US8174088B2 (en) 2007-10-26 2010-02-19 Solid state imaging device

Publications (1)

Publication Number Publication Date
WO2009054097A1 true WO2009054097A1 (ja) 2009-04-30

Family

ID=40579207

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002809 WO2009054097A1 (ja) 2007-10-26 2008-10-06 固体撮像素子

Country Status (3)

Country Link
US (1) US8174088B2 (ja)
JP (1) JP5145866B2 (ja)
WO (1) WO2009054097A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003712A (ja) * 2007-08-09 2010-01-07 Renesas Technology Corp 半導体装置、半導体装置の配置配線方法、及びデータ処理システム
CN112187279B (zh) * 2015-03-04 2024-05-14 索尼公司 模拟数字转换器和光检测装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0414256A (ja) * 1990-05-08 1992-01-20 Fuji Xerox Co Ltd イメージセンサの製造方法
JPH0442934A (ja) * 1990-06-06 1992-02-13 Fuji Xerox Co Ltd 多層配線構造
JPH05316348A (ja) * 1991-08-30 1993-11-26 Fuji Xerox Co Ltd 画像読み取り装置及び画像読み取り方法
JP2002151672A (ja) * 2000-11-15 2002-05-24 Canon Inc 固体撮像装置及び固体撮像システム
JP2004153682A (ja) * 2002-10-31 2004-05-27 Canon Inc 固体撮像装置

Also Published As

Publication number Publication date
JP5145866B2 (ja) 2013-02-20
JP2009110999A (ja) 2009-05-21
US20100148296A1 (en) 2010-06-17
US8174088B2 (en) 2012-05-08

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