WO2009054097A1 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
- Publication number
- WO2009054097A1 WO2009054097A1 PCT/JP2008/002809 JP2008002809W WO2009054097A1 WO 2009054097 A1 WO2009054097 A1 WO 2009054097A1 JP 2008002809 W JP2008002809 W JP 2008002809W WO 2009054097 A1 WO2009054097 A1 WO 2009054097A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ctd
- cts
- signal
- electrode
- storage capacities
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
- 230000001419 dependent effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
各蓄積容量Ctd,Ctsには、対応する垂直信号線の信号に応じた信号が蓄積され、当該蓄積された信号が所定の水平信号線へ供給される。蓄積容量Ctd,Ctsは行方向に交互に順次並設される。各蓄積容量Ctd,Ctsは、信号電極をなす電極層21と、固定電位電極をなす上側電極層23及び下側電極層28を有する。各蓄積容量Ctd,Ctsの信号電極は互いに電気的に独立する。各蓄積容量Ctd,Ctsの固定電位電極は互いに電気的に接続され、グランド等に接続される。電極層23,28間を接続するコンタクトホール26a,26bは、互いに隣接する蓄積容量Ctd,Ctsの電極層21同士の間に、それらの対向領域の52%以上に及ぶように、設けられる。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/708,945 US8174088B2 (en) | 2007-10-26 | 2010-02-19 | Solid state imaging device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007278672A JP5145866B2 (ja) | 2007-10-26 | 2007-10-26 | 固体撮像素子 |
JP2007-278672 | 2007-10-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/708,945 Continuation US8174088B2 (en) | 2007-10-26 | 2010-02-19 | Solid state imaging device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009054097A1 true WO2009054097A1 (ja) | 2009-04-30 |
Family
ID=40579207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/002809 WO2009054097A1 (ja) | 2007-10-26 | 2008-10-06 | 固体撮像素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8174088B2 (ja) |
JP (1) | JP5145866B2 (ja) |
WO (1) | WO2009054097A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010003712A (ja) * | 2007-08-09 | 2010-01-07 | Renesas Technology Corp | 半導体装置、半導体装置の配置配線方法、及びデータ処理システム |
CN112187279B (zh) * | 2015-03-04 | 2024-05-14 | 索尼公司 | 模拟数字转换器和光检测装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0414256A (ja) * | 1990-05-08 | 1992-01-20 | Fuji Xerox Co Ltd | イメージセンサの製造方法 |
JPH0442934A (ja) * | 1990-06-06 | 1992-02-13 | Fuji Xerox Co Ltd | 多層配線構造 |
JPH05316348A (ja) * | 1991-08-30 | 1993-11-26 | Fuji Xerox Co Ltd | 画像読み取り装置及び画像読み取り方法 |
JP2002151672A (ja) * | 2000-11-15 | 2002-05-24 | Canon Inc | 固体撮像装置及び固体撮像システム |
JP2004153682A (ja) * | 2002-10-31 | 2004-05-27 | Canon Inc | 固体撮像装置 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660667A (en) * | 1970-06-22 | 1972-05-02 | Rca Corp | Image sensor array in which each element employs two phototransistors one of which stores charge |
JPH03211769A (ja) * | 1990-01-17 | 1991-09-17 | Hitachi Ltd | 画素増幅型固体撮像素子 |
US5382975A (en) | 1991-08-30 | 1995-01-17 | Fuji Xerox Co., Ltd. | Image reading apparatus |
JP2900662B2 (ja) * | 1991-10-18 | 1999-06-02 | 三菱電機株式会社 | 薄膜トランジスタアレイ |
JPH05227490A (ja) * | 1992-02-07 | 1993-09-03 | Nikon Corp | 固体撮像装置 |
US5949483A (en) | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
US6166768A (en) | 1994-01-28 | 2000-12-26 | California Institute Of Technology | Active pixel sensor array with simple floating gate pixels |
US6570617B2 (en) | 1994-01-28 | 2003-05-27 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
US6021172A (en) | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
US5471515A (en) | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US6486503B1 (en) | 1994-01-28 | 2002-11-26 | California Institute Of Technology | Active pixel sensor array with electronic shuttering |
US5841126A (en) | 1994-01-28 | 1998-11-24 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
JPH07321299A (ja) * | 1994-05-25 | 1995-12-08 | Fuji Xerox Co Ltd | 集積回路及び薄膜集積回路 |
US5793322A (en) | 1995-11-07 | 1998-08-11 | California Institute Of Technology | Successive approximation analog-to-digital converter using balanced charge integrating amplifiers |
WO1997018633A1 (en) | 1995-11-07 | 1997-05-22 | California Institute Of Technology | Capacitively coupled successive approximation ultra low power analog-to-digital converter |
WO1997017800A1 (en) | 1995-11-07 | 1997-05-15 | California Institute Of Technology | An image sensor with high dynamic range linear output |
JP3536517B2 (ja) | 1996-03-06 | 2004-06-14 | 株式会社ニコン | 増幅型固体撮像素子 |
US5990506A (en) | 1996-03-20 | 1999-11-23 | California Institute Of Technology | Active pixel sensors with substantially planarized color filtering elements |
US5929800A (en) | 1996-08-05 | 1999-07-27 | California Institute Of Technology | Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier |
US5886659A (en) | 1996-08-21 | 1999-03-23 | California Institute Of Technology | On-focal-plane analog-to-digital conversion for current-mode imaging devices |
US5952645A (en) | 1996-08-27 | 1999-09-14 | California Institute Of Technology | Light-sensing array with wedge-like reflective optical concentrators |
JP4032443B2 (ja) * | 1996-10-09 | 2008-01-16 | セイコーエプソン株式会社 | 薄膜トランジスタ、回路、アクティブマトリクス基板、液晶表示装置 |
US6175383B1 (en) | 1996-11-07 | 2001-01-16 | California Institute Of Technology | Method and apparatus of high dynamic range image sensor with individual pixel reset |
IL129862A (en) | 1996-11-12 | 2002-11-10 | California Inst Of Techn | Semiconductor imaging sensor with on-chip encryption |
US5887049A (en) | 1996-11-12 | 1999-03-23 | California Institute Of Technology | Self-triggered X-ray sensor |
US5909026A (en) | 1996-11-12 | 1999-06-01 | California Institute Of Technology | Integrated sensor with frame memory and programmable resolution for light adaptive imaging |
US6787749B1 (en) | 1996-11-12 | 2004-09-07 | California Institute Of Technology | Integrated sensor with frame memory and programmable resolution for light adaptive imaging |
JP3669098B2 (ja) * | 1997-02-14 | 2005-07-06 | 株式会社ニコン | 半導体集積回路の容量 |
US6107619A (en) | 1997-07-14 | 2000-08-22 | California Institute Of Technology | Delta-doped hybrid advanced detector for low energy particle detection |
US6546148B1 (en) | 1997-07-14 | 2003-04-08 | California Institute Of Technology | Circuitry for determining median of image portions |
US6515702B1 (en) | 1997-07-14 | 2003-02-04 | California Institute Of Technology | Active pixel image sensor with a winner-take-all mode of operation |
US6107618A (en) | 1997-07-14 | 2000-08-22 | California Institute Of Technology | Integrated infrared and visible image sensors |
US6476860B1 (en) | 1997-07-14 | 2002-11-05 | California Institute Of Technology | Center of mass detection via an active pixel sensor |
US6606122B1 (en) | 1997-09-29 | 2003-08-12 | California Institute Of Technology | Single chip camera active pixel sensor |
US6403963B1 (en) | 1997-09-29 | 2002-06-11 | California Institute Of Technology | Delta-doped CCD's as low-energy particle detectors and imagers |
US6801258B1 (en) | 1998-03-16 | 2004-10-05 | California Institute Of Technology | CMOS integration sensor with fully differential column readout circuit for light adaptive imaging |
US6191830B1 (en) * | 1998-03-19 | 2001-02-20 | Philips Electronics North America Corporation | Electro-optical display having split storage capacitor structure for series capacitance |
US6373050B1 (en) | 1998-10-07 | 2002-04-16 | California Institute Of Technology | Focal plane infrared readout circuit with automatic background suppression |
WO2000021280A1 (en) | 1998-10-07 | 2000-04-13 | California Institute Of Technology | Silicon-on-insulator (soi) active pixel sensors with the photosites implemented in the substrate |
US6384413B1 (en) | 1998-10-13 | 2002-05-07 | California Institute Of Technology | Focal plane infrared readout circuit |
US6326230B1 (en) | 1999-01-06 | 2001-12-04 | California Institute Of Technology | High speed CMOS imager with motion artifact supression and anti-blooming |
JP3683463B2 (ja) * | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
US6519371B1 (en) | 1999-09-30 | 2003-02-11 | California Institute Of Technology | High-speed on-chip windowed centroiding using photodiode-based CMOS imager |
US7268814B1 (en) | 1999-10-05 | 2007-09-11 | California Institute Of Technology | Time-delayed-integration imaging with active pixel sensors |
US6839452B1 (en) | 1999-11-23 | 2005-01-04 | California Institute Of Technology | Dynamically re-configurable CMOS imagers for an active vision system |
US6933488B2 (en) | 2000-06-08 | 2005-08-23 | California Institute Of Technology | Variable electronic shutter in CMOS imager with improved anti smearing techniques |
US7019345B2 (en) | 2000-11-16 | 2006-03-28 | California Institute Of Technology | Photodiode CMOS imager with column-feedback soft-reset for imaging under ultra-low illumination and with high dynamic range |
US6720594B2 (en) * | 2002-01-07 | 2004-04-13 | Xerox Corporation | Image sensor array with reduced pixel crosstalk |
DE10250830B4 (de) * | 2002-10-31 | 2015-02-26 | Qimonda Ag | Verfahren zum Herstellung eines Schaltkreis-Arrays |
-
2007
- 2007-10-26 JP JP2007278672A patent/JP5145866B2/ja not_active Expired - Fee Related
-
2008
- 2008-10-06 WO PCT/JP2008/002809 patent/WO2009054097A1/ja active Application Filing
-
2010
- 2010-02-19 US US12/708,945 patent/US8174088B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0414256A (ja) * | 1990-05-08 | 1992-01-20 | Fuji Xerox Co Ltd | イメージセンサの製造方法 |
JPH0442934A (ja) * | 1990-06-06 | 1992-02-13 | Fuji Xerox Co Ltd | 多層配線構造 |
JPH05316348A (ja) * | 1991-08-30 | 1993-11-26 | Fuji Xerox Co Ltd | 画像読み取り装置及び画像読み取り方法 |
JP2002151672A (ja) * | 2000-11-15 | 2002-05-24 | Canon Inc | 固体撮像装置及び固体撮像システム |
JP2004153682A (ja) * | 2002-10-31 | 2004-05-27 | Canon Inc | 固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5145866B2 (ja) | 2013-02-20 |
JP2009110999A (ja) | 2009-05-21 |
US20100148296A1 (en) | 2010-06-17 |
US8174088B2 (en) | 2012-05-08 |
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