WO2009051120A1 - 半導体素子搭載基板 - Google Patents

半導体素子搭載基板 Download PDF

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Publication number
WO2009051120A1
WO2009051120A1 PCT/JP2008/068609 JP2008068609W WO2009051120A1 WO 2009051120 A1 WO2009051120 A1 WO 2009051120A1 JP 2008068609 W JP2008068609 W JP 2008068609W WO 2009051120 A1 WO2009051120 A1 WO 2009051120A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
semiconductor element
substrate
element mounted
core substrate
Prior art date
Application number
PCT/JP2008/068609
Other languages
English (en)
French (fr)
Inventor
Mitsuo Sugino
Hideki Hara
Toru Meura
Original Assignee
Sumitomo Bakelite Company Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Company Limited filed Critical Sumitomo Bakelite Company Limited
Priority to CN200880111487.3A priority Critical patent/CN101822132B/zh
Priority to US12/682,649 priority patent/US8269332B2/en
Priority to EP08838632A priority patent/EP2214461A1/en
Priority to JP2009538099A priority patent/JPWO2009051120A1/ja
Publication of WO2009051120A1 publication Critical patent/WO2009051120A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1305—Moulding and encapsulation
    • H05K2203/1322—Encapsulation comprising more than one layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

　半導体素子搭載基板１０は、コア基板１と、コア基板１の一方の面に搭載された半導体素子２と、半導体素子２を埋め込む第１の層３と、コア基板１の第１の層３とは反対側に設けられ、第１の層３と材料およびその組成比率が同じである第２の層４と、第１の層３上および第２の層４上に設けられた少なくとも１層の表層５とを有し、表層５は、第１の層３および第２の層４よりも硬いことを特徴とする。表層５の２５°Cにおけるヤング率をＸ［ＧＰａ］、第１の層３の２５°Cにおけるヤング率をＹ［ＧＰａ］としたとき、０．５≦Ｘ－Ｙ≦１３の関係を満足するのが好ましい。
PCT/JP2008/068609 2007-10-16 2008-10-15 半導体素子搭載基板 WO2009051120A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880111487.3A CN101822132B (zh) 2007-10-16 2008-10-15 搭载半导体元件的基板
US12/682,649 US8269332B2 (en) 2007-10-16 2008-10-15 Semiconductor element mounting board
EP08838632A EP2214461A1 (en) 2007-10-16 2008-10-15 Substrate with semiconductor element mounted thereon
JP2009538099A JPWO2009051120A1 (ja) 2007-10-16 2008-10-15 半導体素子搭載基板

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007269569 2007-10-16
JP2007-269569 2007-10-16
JP2008263591 2008-10-10
JP2008-263591 2008-10-10

Publications (1)

Publication Number Publication Date
WO2009051120A1 true WO2009051120A1 (ja) 2009-04-23

Family

ID=40567382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068609 WO2009051120A1 (ja) 2007-10-16 2008-10-15 半導体素子搭載基板

Country Status (7)

Country Link
US (1) US8269332B2 (ja)
EP (1) EP2214461A1 (ja)
JP (1) JPWO2009051120A1 (ja)
KR (1) KR20100068281A (ja)
CN (1) CN101822132B (ja)
TW (1) TW200934315A (ja)
WO (1) WO2009051120A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014150103A (ja) * 2013-01-31 2014-08-21 Shinko Electric Ind Co Ltd 配線基板及び配線基板の製造方法
JP2015204263A (ja) * 2014-04-16 2015-11-16 新光電気工業株式会社 電池内蔵基板及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101055509B1 (ko) * 2009-03-19 2011-08-08 삼성전기주식회사 전자부품 내장형 인쇄회로기판
US11445617B2 (en) 2011-10-31 2022-09-13 Unimicron Technology Corp. Package structure and manufacturing method thereof
US20170374748A1 (en) 2011-10-31 2017-12-28 Unimicron Technology Corp. Package structure and manufacturing method thereof
IT201700105273A1 (it) * 2017-09-20 2019-03-20 Nuovo Pignone Tecnologie Srl Piastra di base per turbomacchina e metodo per produrla

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297560A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd 多層プリント配線基板およびその実装構造体
JP2002093957A (ja) * 2000-09-11 2002-03-29 Sony Corp 電子回路装置およびその製造方法
JP2002246760A (ja) * 2001-02-13 2002-08-30 Fujitsu Ltd 多層プリント配線板およびその製造方法
JP2004343021A (ja) * 2003-03-17 2004-12-02 Matsushita Electric Ind Co Ltd 部品内蔵モジュールの製造方法及び製造装置
JP2005236039A (ja) 2004-02-19 2005-09-02 Tdk Corp 半導体ｉｃ内蔵基板及びその製造方法、並びに、半導体ｉｃ内蔵モジュール
JP2007043184A (ja) * 2006-09-15 2007-02-15 Sumitomo Bakelite Co Ltd 多層プリント配線板用銅箔付き絶縁シートおよびそれを用いたプリント配線板
JP2007096260A (ja) * 2005-08-29 2007-04-12 Shinko Electric Ind Co Ltd 多層配線基板及びその製造方法
JP2007173276A (ja) * 2005-12-19 2007-07-05 Tdk Corp Ｉｃ内蔵基板の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120512A (en) * 1980-02-23 1981-09-21 Tdk Corp Thin film protecting layer
JPS61284463A (ja) * 1985-06-11 1986-12-15 Nippon Kogaku Kk <Nikon> 耐摩耗性に優れたサ−マルヘツド
CN100341921C (zh) * 2003-03-07 2007-10-10 梁国正 一种改性氰酸酯树脂及其制备方法和应用
JP2005327984A (ja) * 2004-05-17 2005-11-24 Shinko Electric Ind Co Ltd 電子部品及び電子部品実装構造の製造方法
JP4843944B2 (ja) * 2005-01-13 2011-12-21 三菱瓦斯化学株式会社 樹脂組成物並びにこれを用いたプリプレグ及び積層板

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297560A (ja) * 1994-04-28 1995-11-10 Hitachi Ltd 多層プリント配線基板およびその実装構造体
JP2002093957A (ja) * 2000-09-11 2002-03-29 Sony Corp 電子回路装置およびその製造方法
JP2002246760A (ja) * 2001-02-13 2002-08-30 Fujitsu Ltd 多層プリント配線板およびその製造方法
JP2004343021A (ja) * 2003-03-17 2004-12-02 Matsushita Electric Ind Co Ltd 部品内蔵モジュールの製造方法及び製造装置
JP2005236039A (ja) 2004-02-19 2005-09-02 Tdk Corp 半導体ｉｃ内蔵基板及びその製造方法、並びに、半導体ｉｃ内蔵モジュール
JP2007096260A (ja) * 2005-08-29 2007-04-12 Shinko Electric Ind Co Ltd 多層配線基板及びその製造方法
JP2007173276A (ja) * 2005-12-19 2007-07-05 Tdk Corp Ｉｃ内蔵基板の製造方法
JP2007043184A (ja) * 2006-09-15 2007-02-15 Sumitomo Bakelite Co Ltd 多層プリント配線板用銅箔付き絶縁シートおよびそれを用いたプリント配線板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014150103A (ja) * 2013-01-31 2014-08-21 Shinko Electric Ind Co Ltd 配線基板及び配線基板の製造方法
JP2015204263A (ja) * 2014-04-16 2015-11-16 新光電気工業株式会社 電池内蔵基板及びその製造方法
US10249859B2 (en) 2014-04-16 2019-04-02 Shinko Electric Industries Co., Ltd. Battery built-in board and method for manufacturing the same

Also Published As

Publication number Publication date
KR20100068281A (ko) 2010-06-22
US20100213597A1 (en) 2010-08-26
EP2214461A1 (en) 2010-08-04
CN101822132B (zh) 2012-12-26
CN101822132A (zh) 2010-09-01
TW200934315A (en) 2009-08-01
US8269332B2 (en) 2012-09-18
JPWO2009051120A1 (ja) 2011-03-03

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