JPS56120512A - Thin film protecting layer - Google Patents

Thin film protecting layer

Info

Publication number
JPS56120512A
JPS56120512A JP2195080A JP2195080A JPS56120512A JP S56120512 A JPS56120512 A JP S56120512A JP 2195080 A JP2195080 A JP 2195080A JP 2195080 A JP2195080 A JP 2195080A JP S56120512 A JPS56120512 A JP S56120512A
Authority
JP
Japan
Prior art keywords
silicon
phosphorus
boron
protecting layer
atomic ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2195080A
Other languages
Japanese (ja)
Other versions
JPH0122154B2 (en
Inventor
Katsuto Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2195080A priority Critical patent/JPS56120512A/en
Publication of JPS56120512A publication Critical patent/JPS56120512A/en
Publication of JPH0122154B2 publication Critical patent/JPH0122154B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electronic Switches (AREA)
  • Chemical Vapour Deposition (AREA)
  • Details Of Resistors (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

PURPOSE: To provide a thin film protecting layer useful as a protecting layer for a thermal head, contg. boron and silicon as principal components and having improved wear and heat resistances.
CONSTITUTION: A thin film protecting layer is formed contg. phosphorus in (0W 0.5):1 atomic ratio of phosphorus to boron and silicon in ≤2:1 atomic ratio of silicon to boron. The phosphorus content may be zero, yet phosphorus is preferably contained in general, and the effect of contained phosphorus is produced in ≥0.01:1 atomic ratio of phosphorus to boron. When the upper limit of phosphorus content is set to ≥0.5, a variety of trouble is caused as a protective layer, and 0.2 upper limit value results in a preferable effect. The effect of contained silicon is remarkable in ≥0.01:1 atomic ratio silicon to boron, yet when the silicon content exceeds 2, the protecting characteristics are deteriorated as compared to the case of no silicon. The protecting layer is formed on a predetermined base device such as a thermal head by vapor phase growing or sputtering.
COPYRIGHT: (C)1981,JPO&Japio
JP2195080A 1980-02-23 1980-02-23 Thin film protecting layer Granted JPS56120512A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2195080A JPS56120512A (en) 1980-02-23 1980-02-23 Thin film protecting layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2195080A JPS56120512A (en) 1980-02-23 1980-02-23 Thin film protecting layer

Publications (2)

Publication Number Publication Date
JPS56120512A true JPS56120512A (en) 1981-09-21
JPH0122154B2 JPH0122154B2 (en) 1989-04-25

Family

ID=12069337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2195080A Granted JPS56120512A (en) 1980-02-23 1980-02-23 Thin film protecting layer

Country Status (1)

Country Link
JP (1) JPS56120512A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191901A (en) * 1984-10-12 1986-05-10 ティーディーケイ株式会社 Thin film protection layer
JPWO2009051120A1 (en) * 2007-10-16 2011-03-03 住友ベークライト株式会社 Semiconductor device mounting substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191901A (en) * 1984-10-12 1986-05-10 ティーディーケイ株式会社 Thin film protection layer
JPWO2009051120A1 (en) * 2007-10-16 2011-03-03 住友ベークライト株式会社 Semiconductor device mounting substrate

Also Published As

Publication number Publication date
JPH0122154B2 (en) 1989-04-25

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