JPS56120512A - Thin film protecting layer - Google Patents
Thin film protecting layerInfo
- Publication number
- JPS56120512A JPS56120512A JP2195080A JP2195080A JPS56120512A JP S56120512 A JPS56120512 A JP S56120512A JP 2195080 A JP2195080 A JP 2195080A JP 2195080 A JP2195080 A JP 2195080A JP S56120512 A JPS56120512 A JP S56120512A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- phosphorus
- boron
- protecting layer
- atomic ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Electronic Switches (AREA)
- Chemical Vapour Deposition (AREA)
- Details Of Resistors (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
PURPOSE: To provide a thin film protecting layer useful as a protecting layer for a thermal head, contg. boron and silicon as principal components and having improved wear and heat resistances.
CONSTITUTION: A thin film protecting layer is formed contg. phosphorus in (0W 0.5):1 atomic ratio of phosphorus to boron and silicon in ≤2:1 atomic ratio of silicon to boron. The phosphorus content may be zero, yet phosphorus is preferably contained in general, and the effect of contained phosphorus is produced in ≥0.01:1 atomic ratio of phosphorus to boron. When the upper limit of phosphorus content is set to ≥0.5, a variety of trouble is caused as a protective layer, and 0.2 upper limit value results in a preferable effect. The effect of contained silicon is remarkable in ≥0.01:1 atomic ratio silicon to boron, yet when the silicon content exceeds 2, the protecting characteristics are deteriorated as compared to the case of no silicon. The protecting layer is formed on a predetermined base device such as a thermal head by vapor phase growing or sputtering.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2195080A JPS56120512A (en) | 1980-02-23 | 1980-02-23 | Thin film protecting layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2195080A JPS56120512A (en) | 1980-02-23 | 1980-02-23 | Thin film protecting layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56120512A true JPS56120512A (en) | 1981-09-21 |
JPH0122154B2 JPH0122154B2 (en) | 1989-04-25 |
Family
ID=12069337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2195080A Granted JPS56120512A (en) | 1980-02-23 | 1980-02-23 | Thin film protecting layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120512A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6191901A (en) * | 1984-10-12 | 1986-05-10 | ティーディーケイ株式会社 | Thin film protection layer |
JPWO2009051120A1 (en) * | 2007-10-16 | 2011-03-03 | 住友ベークライト株式会社 | Semiconductor device mounting substrate |
-
1980
- 1980-02-23 JP JP2195080A patent/JPS56120512A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6191901A (en) * | 1984-10-12 | 1986-05-10 | ティーディーケイ株式会社 | Thin film protection layer |
JPWO2009051120A1 (en) * | 2007-10-16 | 2011-03-03 | 住友ベークライト株式会社 | Semiconductor device mounting substrate |
Also Published As
Publication number | Publication date |
---|---|
JPH0122154B2 (en) | 1989-04-25 |
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