WO2009041637A1 - 半導体検査装置及び検査方法ならびに被検査半導体装置 - Google Patents

半導体検査装置及び検査方法ならびに被検査半導体装置 Download PDF

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Publication number
WO2009041637A1
WO2009041637A1 PCT/JP2008/067525 JP2008067525W WO2009041637A1 WO 2009041637 A1 WO2009041637 A1 WO 2009041637A1 JP 2008067525 W JP2008067525 W JP 2008067525W WO 2009041637 A1 WO2009041637 A1 WO 2009041637A1
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WIPO (PCT)
Prior art keywords
lsi
semiconductor
inspected
inspection
inspecting apparatus
Prior art date
Application number
PCT/JP2008/067525
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English (en)
French (fr)
Inventor
Masamoto Tago
Yoshihiro Nakagawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to CN200880109494XA priority Critical patent/CN101809728B/zh
Priority to US12/679,959 priority patent/US20100194423A1/en
Priority to JP2009534432A priority patent/JPWO2009041637A1/ja
Publication of WO2009041637A1 publication Critical patent/WO2009041637A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/3025—Wireless interface with the DUT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

　本発明は半導体ウエハの一括検査が可能な半導体検査装置を提供することを目的とし、本発明による半導体検査装置は、非接触信号伝送用の回路ならびに電極を有する検査用ＬＳＩと、接触式のプローブピンを取り付けたプローブカードとが分離独立され、検査用ＬＳＩと被検査ＬＳＩおよびプローブカードの各々の電極を精密に位置あわせする認識ユニットとを有し、検査用ＬＳＩとプローブカードのプローブピンをステージもしくは加圧ヘッドに装着し、被検査ＬＳＩの表裏面から同時に挟み込むようにコンタクト可能な構成を有する。
PCT/JP2008/067525 2007-09-28 2008-09-26 半導体検査装置及び検査方法ならびに被検査半導体装置 WO2009041637A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880109494XA CN101809728B (zh) 2007-09-28 2008-09-26 用于检测半导体的设备和方法以及被检测半导体器件
US12/679,959 US20100194423A1 (en) 2007-09-28 2008-09-26 Apparatus and method for testing semiconductor and semiconductor device to be tested
JP2009534432A JPWO2009041637A1 (ja) 2007-09-28 2008-09-26 半導体検査装置及び検査方法ならびに被検査半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007255170 2007-09-28
JP2007-255170 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041637A1 true WO2009041637A1 (ja) 2009-04-02

Family

ID=40511517

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067525 WO2009041637A1 (ja) 2007-09-28 2008-09-26 半導体検査装置及び検査方法ならびに被検査半導体装置

Country Status (4)

Country Link
US (1) US20100194423A1 (ja)
JP (1) JPWO2009041637A1 (ja)
CN (1) CN101809728B (ja)
WO (1) WO2009041637A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011090146A1 (ja) * 2010-01-22 2011-07-28 日本電気株式会社 プローブカード、半導体ウェハ、検査装置及び、検査方法
CN111880082A (zh) * 2020-08-08 2020-11-03 苏州喻芯半导体有限公司 一种电源舱芯片测试方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8436631B2 (en) * 2009-06-12 2013-05-07 Semicaps Pte Ltd Wafer stage
US8476918B2 (en) * 2010-04-28 2013-07-02 Tsmc Solid State Lighting Ltd. Apparatus and method for wafer level classification of light emitting device
JP2012204695A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プローブカード検出装置、ウエハの位置合わせ装置及びウエハの位置合わせ方法
US8912810B2 (en) * 2011-09-09 2014-12-16 Texas Instruments Incorporated Contactor with multi-pin device contacts
JP5970552B2 (ja) * 2012-09-11 2016-08-17 シャープ株式会社 試験用治具、検査装置、載置装置および試験装置
US9563105B1 (en) * 2013-04-10 2017-02-07 Ic Real Tech Inc. Screw coupler enabling direct secure fastening between communicating electronic components
AT514514A1 (de) * 2013-06-28 2015-01-15 Stefan Dipl Ing Pargfrieder Vorrichtung und Verfahren für das elektrische Testen von Produktsubstraten
US11257724B2 (en) 2016-08-08 2022-02-22 Semiconductor Components Industries, Llc Semiconductor wafer and method of probe testing
US11075129B2 (en) 2016-08-08 2021-07-27 Semiconductor Components Industries, Llc Substrate processing carrier
US10461000B2 (en) * 2016-08-08 2019-10-29 Semiconductor Components Industries, Llc Semiconductor wafer and method of probe testing
JP6562896B2 (ja) * 2016-12-22 2019-08-21 三菱電機株式会社 半導体装置の評価装置およびそれを用いた半導体装置の評価方法
CN111435146A (zh) * 2019-01-14 2020-07-21 北京确安科技股份有限公司 一种基于mes的晶圆测试方法及系统
CN111551838B (zh) * 2020-04-21 2022-04-05 深圳瑞波光电子有限公司 半导体激光芯片组件的测试装置
TWI740791B (zh) * 2021-03-15 2021-09-21 創意電子股份有限公司 測試裝置及其取件模組
CN113540144A (zh) * 2021-06-18 2021-10-22 泉州三安半导体科技有限公司 实现多颗led芯片esd测试的晶圆、正装led芯片及其制造方法
CN114325350A (zh) * 2022-03-15 2022-04-12 北京智芯传感科技有限公司 一种小型mems传感器测试设备及测试方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029422A1 (ja) * 2005-09-07 2007-03-15 Nec Corporation 半導体装置の検査装置及び電源供給ユニット

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319044A (ja) * 1997-05-15 1998-12-04 Mitsubishi Electric Corp プローブカード
JP3732738B2 (ja) * 2000-12-08 2006-01-11 ファブソリューション株式会社 半導体デバイス検査装置
JP2002257898A (ja) * 2001-03-06 2002-09-11 Nec Corp 半導体装置検査用プローブ構造とその製造方法
CA2404183C (en) * 2002-09-19 2008-09-02 Scanimetrics Inc. Non-contact tester for integrated circuits
JP4842533B2 (ja) * 2004-10-27 2011-12-21 株式会社日立ハイテクノロジーズ 不良検査装置
JP4187718B2 (ja) * 2004-12-20 2008-11-26 松下電器産業株式会社 プローブカード

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029422A1 (ja) * 2005-09-07 2007-03-15 Nec Corporation 半導体装置の検査装置及び電源供給ユニット

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011090146A1 (ja) * 2010-01-22 2011-07-28 日本電気株式会社 プローブカード、半導体ウェハ、検査装置及び、検査方法
CN111880082A (zh) * 2020-08-08 2020-11-03 苏州喻芯半导体有限公司 一种电源舱芯片测试方法
CN111880082B (zh) * 2020-08-08 2023-05-23 苏州喻芯半导体有限公司 一种电源舱芯片测试方法

Also Published As

Publication number Publication date
CN101809728A (zh) 2010-08-18
JPWO2009041637A1 (ja) 2011-01-27
CN101809728B (zh) 2013-05-01
US20100194423A1 (en) 2010-08-05

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