WO2009041282A1 - 成膜装置、成膜方法、記憶媒体及びガス供給装置 - Google Patents

成膜装置、成膜方法、記憶媒体及びガス供給装置 Download PDF

Info

Publication number
WO2009041282A1
WO2009041282A1 PCT/JP2008/066455 JP2008066455W WO2009041282A1 WO 2009041282 A1 WO2009041282 A1 WO 2009041282A1 JP 2008066455 W JP2008066455 W JP 2008066455W WO 2009041282 A1 WO2009041282 A1 WO 2009041282A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
film forming
gas supply
processing
supply port
Prior art date
Application number
PCT/JP2008/066455
Other languages
English (en)
French (fr)
Inventor
Einosuke Tsuda
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US12/680,088 priority Critical patent/US20100272895A1/en
Priority to CN2008800251214A priority patent/CN101755325B/zh
Publication of WO2009041282A1 publication Critical patent/WO2009041282A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　成膜装置は、処理容器２と、処理容器２内に配置され、基板Ｗを載置するための載置台３と、載置台３に対向して配置され、第１の処理ガスを供給する第１のガス供給孔５１ｂと、第２の処理ガスを供給する第２のガス供給孔５２ｂと、第３の処理ガスを供給する第３のガス供給孔５３ｂとが設けられたガス供給面４０ａを有するガスシャワーヘッド４と、を備えている。ガス供給面４０ａは互いに同一の大きさの正三角形からなる単位区画４０１に分割され、当該単位区画４０１を構成する各正三角形の３つの頂点の各々に、第１のガス供給孔５１ｂ、第２のガス供給孔５２ｂ及び第３のガス供給孔５３ｂが設けられている。第１の処理ガス、第２の処理ガス及び第３の処理ガスの各々は互いに異なり、これら第１の処理ガス、第２の処理ガス及び第３の処理ガスを互いに反応させて、基板Ｗの表面に薄膜を成膜する。
PCT/JP2008/066455 2007-09-28 2008-09-11 成膜装置、成膜方法、記憶媒体及びガス供給装置 WO2009041282A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/680,088 US20100272895A1 (en) 2007-09-28 2008-09-11 Film deposition apparatus, film deposition method, storage medium, and gas supply apparatus
CN2008800251214A CN101755325B (zh) 2007-09-28 2008-09-11 成膜装置、成膜方法、存储介质及气体供给装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007255780A JP2009088229A (ja) 2007-09-28 2007-09-28 成膜装置、成膜方法、記憶媒体及びガス供給装置
JP2007-255780 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041282A1 true WO2009041282A1 (ja) 2009-04-02

Family

ID=40511171

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066455 WO2009041282A1 (ja) 2007-09-28 2008-09-11 成膜装置、成膜方法、記憶媒体及びガス供給装置

Country Status (6)

Country Link
US (1) US20100272895A1 (ja)
JP (1) JP2009088229A (ja)
KR (1) KR101268186B1 (ja)
CN (1) CN101755325B (ja)
TW (1) TW200935515A (ja)
WO (1) WO2009041282A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100204810A1 (en) * 2009-02-12 2010-08-12 Tokyo Electron Limited Plasma processing apparatus, and maintenance method and assembling method of the same
US20120269968A1 (en) * 2011-04-21 2012-10-25 Kurt J. Lesker Company Atomic Layer Deposition Apparatus and Process

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
JP2010235897A (ja) 2009-03-31 2010-10-21 Fujifilm Corp 非水系インク、インクセット、画像記録方法、画像記録装置、および記録物
DE102009043840A1 (de) * 2009-08-24 2011-03-03 Aixtron Ag CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor
JP5445252B2 (ja) * 2010-03-16 2014-03-19 東京エレクトロン株式会社 成膜装置
CN103403843B (zh) 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
TWI534291B (zh) * 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
CN102154691B (zh) * 2011-05-30 2012-11-21 东莞市中镓半导体科技有限公司 狭缝式多气体输运喷头结构
US8635573B2 (en) 2011-08-01 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device having a defined minimum gate spacing between adjacent gate structures
US8900364B2 (en) * 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
JP5823922B2 (ja) * 2012-06-14 2015-11-25 東京エレクトロン株式会社 成膜方法
US9132436B2 (en) * 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
JP6305314B2 (ja) * 2014-10-29 2018-04-04 東京エレクトロン株式会社 成膜装置およびシャワーヘッド
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
KR102417934B1 (ko) * 2015-07-07 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
JP6608332B2 (ja) * 2016-05-23 2019-11-20 東京エレクトロン株式会社 成膜装置
JP6685179B2 (ja) * 2016-06-01 2020-04-22 東京エレクトロン株式会社 基板処理方法
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
TWI605150B (zh) * 2017-02-03 2017-11-11 台灣積體電路製造股份有限公司 氣體供應裝置及方法
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10927459B2 (en) 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
KR102584230B1 (ko) * 2018-08-09 2023-10-04 도쿄엘렉트론가부시키가이샤 성막 장치 및 성막 방법
JP7225599B2 (ja) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 成膜装置
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
KR102390560B1 (ko) 2018-11-30 2022-04-26 메이덴샤 코포레이션 산화막 형성 장치
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR102315665B1 (ko) * 2019-08-19 2021-10-22 세메스 주식회사 기판 처리 장치
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
WO2022020639A1 (en) * 2020-07-24 2022-01-27 Lam Research Corporation Showerhead with reduced interior volumes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745540A (ja) * 1993-07-29 1995-02-14 Mitsubishi Heavy Ind Ltd プラズマ化学蒸着装置
JP2004193173A (ja) * 2002-12-06 2004-07-08 Fujitsu Ltd 気相成長装置及び気相成長方法
JP2005000723A (ja) * 2003-06-09 2005-01-06 Tokyo Electron Ltd 分圧制御システム、流量制御システム、及び、分圧制御システムに用いるシャワープレート
WO2006020424A2 (en) * 2004-08-02 2006-02-23 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
WO2006059602A1 (ja) * 2004-11-30 2006-06-08 Tokyo Electron Limited 成膜方法及び成膜装置並びに記憶媒体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100343144B1 (ko) * 1999-10-06 2002-07-05 윤종용 원자층 증착법을 이용한 박막 형성 방법
US6824123B2 (en) * 2001-05-24 2004-11-30 Master-Halco, Inc. Picket fence and rail mounting system
KR20060011887A (ko) * 2003-05-30 2006-02-03 에비자 테크놀로지, 인크. 가스 분산 시스템
JP2006299294A (ja) * 2005-04-15 2006-11-02 Tokyo Electron Ltd ガス供給装置及び成膜装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745540A (ja) * 1993-07-29 1995-02-14 Mitsubishi Heavy Ind Ltd プラズマ化学蒸着装置
JP2004193173A (ja) * 2002-12-06 2004-07-08 Fujitsu Ltd 気相成長装置及び気相成長方法
JP2005000723A (ja) * 2003-06-09 2005-01-06 Tokyo Electron Ltd 分圧制御システム、流量制御システム、及び、分圧制御システムに用いるシャワープレート
WO2006020424A2 (en) * 2004-08-02 2006-02-23 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
WO2006059602A1 (ja) * 2004-11-30 2006-06-08 Tokyo Electron Limited 成膜方法及び成膜装置並びに記憶媒体

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100204810A1 (en) * 2009-02-12 2010-08-12 Tokyo Electron Limited Plasma processing apparatus, and maintenance method and assembling method of the same
US8945340B2 (en) * 2009-02-12 2015-02-03 Tokyo Electron Limited Plasma processing apparatus, and maintenance method and assembling method of the same
US20120269968A1 (en) * 2011-04-21 2012-10-25 Kurt J. Lesker Company Atomic Layer Deposition Apparatus and Process
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process

Also Published As

Publication number Publication date
US20100272895A1 (en) 2010-10-28
TW200935515A (en) 2009-08-16
JP2009088229A (ja) 2009-04-23
KR20100058446A (ko) 2010-06-03
CN101755325A (zh) 2010-06-23
KR101268186B1 (ko) 2013-05-27
CN101755325B (zh) 2012-07-18

Similar Documents

Publication Publication Date Title
WO2009041282A1 (ja) 成膜装置、成膜方法、記憶媒体及びガス供給装置
NZ584391A (en) Decorating vessel such as can with mandrel having hard surface for printing and mandrel having soft surface for embossing
AU2003217708A1 (en) Process for coating three-dimensional substrates with thin organic films and products
WO2008120716A1 (ja) 基板処理装置、基板処理方法及びコンピュータ可読記憶媒体
AU2003232469A1 (en) Method for the production of structured layers on substrates
EP2138604A3 (en) Film deposition apparatus, film deposition method, and computer readable storage medium
EP1770187A4 (en) THIN FILM MANUFACTURING MATERIAL AND THIN FILM MANUFACTURING METHOD
EP1970940A3 (en) Substrate processing apparatus, substrate processing method and storage medium
SG133543A1 (en) Apparatus and system for cleaning a substrate
WO2006091845A3 (en) Apparatus and method for the transfer of a fluid to a moving web material
TW200625443A (en) Film formation apparatus and method for semiconductor process
EP2031606A4 (en) THIN FILM SUPERCONDUCTING MATERIAL AND METHOD FOR MANUFACTURING THE SAME
TW200705139A (en) System and method for transferring features to a substrate
EP1940501A4 (en) Insufflating system, method, and computer program product for controlling the supply of a distending media to an endoscopic device
EP1973177B8 (en) Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
NO20052263D0 (no) Fremgangsmate for a danne ferroelektriske tynnfilmer, bruk av fremgangsmaten og minne med ferroelektrisk oligomer som minnemateriale
AU2003229196A1 (en) Ceramic thin film on various substrates, and process for producing same
JP2011071498A5 (ja) 半導体装置の作製方法
EP1883105B8 (en) Substrate storage container and method of producing the same
EP1717338A4 (en) DEVICE FOR TRAINING THIN FILMS
EP1672091A4 (en) WURTSRITE THIN FILM, LAMEL CONTAINING A WURZRITE CRYSTAL LAYER AND PROCESS FOR PRODUCING THE SAME
TW200705676A (en) Method of making a display device, a display device made thereby and a thin film transistor substrate made thereby
PL1725118T3 (pl) Urządzenie do chłodzenia wyparnego produktu ciekłego
EP1972988B8 (en) Light-transmissive film, method for manufacturing the same, and display apparatus
WO2007044530A3 (en) Methods and apparatus for epitaxial film formation

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880025121.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08834073

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107000200

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12680088

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 08834073

Country of ref document: EP

Kind code of ref document: A1