WO2009041219A1 - Ｓｒ－Ｔｉ－Ｏ系膜の成膜方法および記憶媒体 - Google Patents

Ｓｒ－Ｔｉ－Ｏ系膜の成膜方法および記憶媒体 Download PDF

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Publication number
WO2009041219A1
WO2009041219A1 PCT/JP2008/065706 JP2008065706W WO2009041219A1 WO 2009041219 A1 WO2009041219 A1 WO 2009041219A1 JP 2008065706 W JP2008065706 W JP 2008065706W WO 2009041219 A1 WO2009041219 A1 WO 2009041219A1
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WIPO (PCT)
Prior art keywords
recording medium
film formation
base film
film forming
film
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PCT/JP2008/065706
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English (en)
French (fr)
Inventor
Yumiko Kawano
Susumu Arima
Akinobu Kakimoto
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Tokyo Electron Limited
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Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020107002918A priority Critical patent/KR101200577B1/ko
Priority to CN2008801031673A priority patent/CN101971303B/zh
Priority to KR1020117030107A priority patent/KR101217419B1/ko
Priority to US12/676,237 priority patent/US8679913B2/en
Priority to JP2009534253A priority patent/JP5678252B2/ja
Publication of WO2009041219A1 publication Critical patent/WO2009041219A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/314—Inorganic layers
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • General Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

　膜中のＳｒとＴｉの比率Ｓｒ／Ｔｉが原子数比で１．２以上３以下になるようにして成膜した後、０．００１％以上８０％以下のＯ２を含有する雰囲気中、５００°C以上でアニールする。また、ＳｒＯ膜成膜段階同士または／およびＴｉＯ膜成膜段階同士が複数回続けて行われるようなシーケンスを含むようにしてＳｒＯ膜成膜段階およびＴｉＯ膜成膜段階を複数回行う。さらに、Ｓｒを吸着させた後、Ｓｒを酸化させる際に、酸化剤としてＯ３およびＨ２Ｏを用いる。
PCT/JP2008/065706 2007-09-04 2008-09-02 Ｓｒ－Ｔｉ－Ｏ系膜の成膜方法および記憶媒体 WO2009041219A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020107002918A KR101200577B1 (ko) 2007-09-04 2008-09-02 Ｓｒ-Ｔｉ-Ｏ계 막의 성막 방법 및 기억 매체
CN2008801031673A CN101971303B (zh) 2007-09-04 2008-09-02 Sr-Ti-O系膜的成膜方法和存储媒介
KR1020117030107A KR101217419B1 (ko) 2007-09-04 2008-09-02 Ｓｒ-Ｔｉ-Ｏ계 막의 성막 방법 및 기억 매체
US12/676,237 US8679913B2 (en) 2007-09-04 2008-09-02 Method for Sr—Ti—O-based film formation
JP2009534253A JP5678252B2 (ja) 2007-09-04 2008-09-02 Ｓｒ−Ｔｉ−Ｏ系膜の成膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007228745 2007-09-04
JP2007-228745 2007-09-04

Publications (1)

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WO2009041219A1 true WO2009041219A1 (ja) 2009-04-02

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PCT/JP2008/065706 WO2009041219A1 (ja) 2007-09-04 2008-09-02 Ｓｒ－Ｔｉ－Ｏ系膜の成膜方法および記憶媒体

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US (1) US8679913B2 (ja)
JP (1) JP5678252B2 (ja)
KR (2) KR101217419B1 (ja)
CN (1) CN101971303B (ja)
TW (1) TWI492301B (ja)
WO (1) WO2009041219A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175720A (ja) * 2012-01-24 2013-09-05 Fumihiko Hirose 薄膜形成方法および装置
JP2014140018A (ja) * 2012-12-21 2014-07-31 Tokyo Electron Ltd 成膜方法

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Publication number Priority date Publication date Assignee Title
US8202808B2 (en) * 2009-06-03 2012-06-19 Intermolecular, Inc. Methods of forming strontium titanate films
CN103839875B (zh) * 2012-11-21 2017-08-22 北京北方微电子基地设备工艺研究中心有限责任公司 一种衬底处理系统
JP2020122206A (ja) * 2019-01-31 2020-08-13 東京エレクトロン株式会社 基板処理装置の制御方法及び基板処理装置
JP7454915B2 (ja) 2019-04-11 2024-03-25 東京エレクトロン株式会社 処理装置および処理方法
KR102639298B1 (ko) * 2020-10-30 2024-02-20 삼성에스디아이 주식회사 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
WO2024081135A1 (en) * 2022-10-10 2024-04-18 Lam Research Corporation Purging toxic and corrosive material from substrate processing chambers

Citations (2)

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JP2002525426A (ja) * 1998-09-11 2002-08-13 エイエスエム マイクロケミストリ オーワイ バリウムとストロンチウムとを含有する酸化物薄膜を成長させる方法
JP2003059921A (ja) * 2001-07-30 2003-02-28 Applied Materials Inc 絶縁体膜の形成方法、及び、キャパシタ部材の製造方法

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US20060219157A1 (en) * 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
JP4803578B2 (ja) * 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2002525426A (ja) * 1998-09-11 2002-08-13 エイエスエム マイクロケミストリ オーワイ バリウムとストロンチウムとを含有する酸化物薄膜を成長させる方法
JP2003059921A (ja) * 2001-07-30 2003-02-28 Applied Materials Inc 絶縁体膜の形成方法、及び、キャパシタ部材の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175720A (ja) * 2012-01-24 2013-09-05 Fumihiko Hirose 薄膜形成方法および装置
JP2014140018A (ja) * 2012-12-21 2014-07-31 Tokyo Electron Ltd 成膜方法

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CN101971303B (zh) 2013-05-01
JP5678252B2 (ja) 2015-02-25
US20110014797A1 (en) 2011-01-20
JPWO2009041219A1 (ja) 2011-01-20
TWI492301B (zh) 2015-07-11
US8679913B2 (en) 2014-03-25
KR20100035176A (ko) 2010-04-02
KR101217419B1 (ko) 2013-01-02
CN101971303A (zh) 2011-02-09
TW200933738A (en) 2009-08-01
KR20110139322A (ko) 2011-12-28
KR101200577B1 (ko) 2012-11-12

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