WO2009038083A1 - 薄膜太陽電池素子及びその製造方法 - Google Patents

薄膜太陽電池素子及びその製造方法 Download PDF

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Publication number
WO2009038083A1
WO2009038083A1 PCT/JP2008/066757 JP2008066757W WO2009038083A1 WO 2009038083 A1 WO2009038083 A1 WO 2009038083A1 JP 2008066757 W JP2008066757 W JP 2008066757W WO 2009038083 A1 WO2009038083 A1 WO 2009038083A1
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WIPO (PCT)
Prior art keywords
photoelectric conversion
thin
electricity
solar cell
electrode layer
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Application number
PCT/JP2008/066757
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English (en)
French (fr)
Inventor
Mikio Yamamuka
Tae Orita
Hiroya Yamarin
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Mitsubishi Electric Corporation
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Publication date
Application filed by Mitsubishi Electric Corporation filed Critical Mitsubishi Electric Corporation
Priority to US12/672,140 priority Critical patent/US20110220189A1/en
Priority to EP08832752.3A priority patent/EP2192619A4/en
Priority to CN2008801075648A priority patent/CN101803038B/zh
Priority to JP2009533154A priority patent/JP5143136B2/ja
Publication of WO2009038083A1 publication Critical patent/WO2009038083A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　本発明の目的は、より高い発電効率の薄膜太陽電池素子を実現することにあり、裏面電極層と光電変換層の間、及び、積層された複数の光電変換層の間に、透明電極層を挿入したタンデム構造の薄膜太陽電池素子に適用される。第１電気伝導路（６）は、中間透明電極層（４）及び第１絶縁層（５）を貫く微細孔に導電性材料の薄膜（比抵抗＜１０-4Ωｃｍ）が形成されて成り、第１及び第２光電変換層（３），（７）を互いに電気的に接続する。同様の構造を有する第２電気伝導路（１６）も、第２光電変換層（７）と裏面電極層（９）とを互いに電気的に接続する。第１及び第２電気伝導路（６），（１６）から成る電気伝導路の総面積は、セルの面積に対して、１×１０-7以上、４×１０-6以下の範囲内に設定されている。上記導電性材料は、白金、金、クロム、ルテニウム及び窒化チタンの何れかより成る。
PCT/JP2008/066757 2007-09-18 2008-09-17 薄膜太陽電池素子及びその製造方法 WO2009038083A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/672,140 US20110220189A1 (en) 2007-09-18 2008-09-17 Thin film solar cell device and method of manufacturing the same
EP08832752.3A EP2192619A4 (en) 2007-09-18 2008-09-17 THIN FILM SOLAR CELL DEVICE AND METHOD FOR MANUFACTURING THE SAME
CN2008801075648A CN101803038B (zh) 2007-09-18 2008-09-17 薄膜太阳能电池元件及其制造方法
JP2009533154A JP5143136B2 (ja) 2007-09-18 2008-09-17 薄膜太陽電池素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007240480 2007-09-18
JP2007-240480 2007-09-18

Publications (1)

Publication Number Publication Date
WO2009038083A1 true WO2009038083A1 (ja) 2009-03-26

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ID=40467893

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066757 WO2009038083A1 (ja) 2007-09-18 2008-09-17 薄膜太陽電池素子及びその製造方法

Country Status (5)

Country Link
US (1) US20110220189A1 (ja)
EP (1) EP2192619A4 (ja)
JP (1) JP5143136B2 (ja)
CN (1) CN101803038B (ja)
WO (1) WO2009038083A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011008427A1 (en) * 2009-07-17 2011-01-20 S.O.I.Tec Silicon On Insulator Technologies Method of bonding using a bonding layer based on zinc, silicon and oxygen and corresponding structures
CN102290454A (zh) * 2010-06-21 2011-12-21 杜邦太阳能有限公司 多电极光伏面板
JP2013055215A (ja) * 2011-09-05 2013-03-21 Dainippon Printing Co Ltd 太陽電池および太陽電池モジュール
JP2018157099A (ja) * 2017-03-17 2018-10-04 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110048518A1 (en) * 2009-08-26 2011-03-03 Molecular Imprints, Inc. Nanostructured thin film inorganic solar cells
CN103208567B (zh) * 2013-03-20 2017-03-08 映瑞光电科技(上海)有限公司 一种叠层式led芯片及其制造方法
CN104300017B (zh) * 2014-10-17 2017-03-29 中国科学技术大学 具有多孔高电阻层的薄膜太阳能电池
CN111354808A (zh) * 2018-12-20 2020-06-30 广东汉能薄膜太阳能有限公司 一种太阳能芯片及其制备方法
JP2020167243A (ja) * 2019-03-29 2020-10-08 パナソニック株式会社 太陽電池セル集合体、及び、太陽電池セルの製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024078A (ja) * 1983-07-20 1985-02-06 Toshiba Corp 光起電力装置
JPH02143569A (ja) * 1988-11-25 1990-06-01 Agency Of Ind Science & Technol 光電変換素子
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04127580A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd 多接合型アモルファスシリコン系太陽電池
JP2002208715A (ja) 2001-01-09 2002-07-26 Fuji Electric Co Ltd 光起電力素子およびその製造方法
JP2002222972A (ja) 2001-01-29 2002-08-09 Sharp Corp 積層型太陽電池
JP2004071716A (ja) * 2002-08-02 2004-03-04 Mitsubishi Heavy Ind Ltd タンデム型光起電力素子及びその製造方法
WO2005081324A1 (ja) * 2004-02-20 2005-09-01 Sharp Kabushiki Kaisha 光電変換装置用基板、光電変換装置、積層型光電変換装置
JP2006107911A (ja) * 2004-10-05 2006-04-20 Mitsubishi Electric Corp 電子放出装置およびその製造方法

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JPH0410351U (ja) * 1990-05-16 1992-01-29
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
JP2003008036A (ja) * 2001-06-26 2003-01-10 Sharp Corp 太陽電池及びその製造方法
JP4503226B2 (ja) * 2002-10-22 2010-07-14 株式会社フジクラ 電極基板、光電変換素子、並びに色素増感太陽電池
US8455753B2 (en) * 2005-01-14 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Solar cell and semiconductor device, and manufacturing method thereof
JP5081389B2 (ja) * 2006-02-23 2012-11-28 三洋電機株式会社 光起電力装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024078A (ja) * 1983-07-20 1985-02-06 Toshiba Corp 光起電力装置
JPH02143569A (ja) * 1988-11-25 1990-06-01 Agency Of Ind Science & Technol 光電変換素子
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04127580A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd 多接合型アモルファスシリコン系太陽電池
JP2002208715A (ja) 2001-01-09 2002-07-26 Fuji Electric Co Ltd 光起電力素子およびその製造方法
JP2002222972A (ja) 2001-01-29 2002-08-09 Sharp Corp 積層型太陽電池
JP2004071716A (ja) * 2002-08-02 2004-03-04 Mitsubishi Heavy Ind Ltd タンデム型光起電力素子及びその製造方法
WO2005081324A1 (ja) * 2004-02-20 2005-09-01 Sharp Kabushiki Kaisha 光電変換装置用基板、光電変換装置、積層型光電変換装置
JP2006107911A (ja) * 2004-10-05 2006-04-20 Mitsubishi Electric Corp 電子放出装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011008427A1 (en) * 2009-07-17 2011-01-20 S.O.I.Tec Silicon On Insulator Technologies Method of bonding using a bonding layer based on zinc, silicon and oxygen and corresponding structures
CN102640303A (zh) * 2009-07-17 2012-08-15 索泰克公司 使用基于锌、硅和氧的接合层的接合方法及相应的结构体
US9070818B2 (en) 2009-07-17 2015-06-30 Soitec Methods and structures for bonding elements
CN102290454A (zh) * 2010-06-21 2011-12-21 杜邦太阳能有限公司 多电极光伏面板
JP2013055215A (ja) * 2011-09-05 2013-03-21 Dainippon Printing Co Ltd 太陽電池および太陽電池モジュール
JP2018157099A (ja) * 2017-03-17 2018-10-04 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム
US11031512B2 (en) 2017-03-17 2021-06-08 Kabushiki Kaisha Toshiba Solar cell, multijunction solar cell, solar cell module, and solar power generation system
JP6993784B2 (ja) 2017-03-17 2022-01-14 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム

Also Published As

Publication number Publication date
EP2192619A4 (en) 2013-10-30
CN101803038A (zh) 2010-08-11
CN101803038B (zh) 2012-02-29
US20110220189A1 (en) 2011-09-15
JPWO2009038083A1 (ja) 2011-01-06
JP5143136B2 (ja) 2013-02-13
EP2192619A1 (en) 2010-06-02

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