WO2009031206A1 - 半導体レーザ素子および半導体レーザ素子製造方法 - Google Patents
半導体レーザ素子および半導体レーザ素子製造方法 Download PDFInfo
- Publication number
- WO2009031206A1 WO2009031206A1 PCT/JP2007/067231 JP2007067231W WO2009031206A1 WO 2009031206 A1 WO2009031206 A1 WO 2009031206A1 JP 2007067231 W JP2007067231 W JP 2007067231W WO 2009031206 A1 WO2009031206 A1 WO 2009031206A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor laser
- laser element
- window region
- group
- vacancies
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3427—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in IV compounds
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Geometry (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009531045A JP5128604B2 (ja) | 2007-09-04 | 2007-09-04 | 半導体レーザ素子および半導体レーザ素子製造方法 |
EP07806686.7A EP2187488B1 (en) | 2007-09-04 | 2007-09-04 | Semiconductor laser element, and semiconductor laser element manufacturing method |
PCT/JP2007/067231 WO2009031206A1 (ja) | 2007-09-04 | 2007-09-04 | 半導体レーザ素子および半導体レーザ素子製造方法 |
CN2007801005049A CN101796699B (zh) | 2007-09-04 | 2007-09-04 | 半导体激光元件以及半导体激光元件制造方法 |
US12/716,315 US8842707B2 (en) | 2007-09-04 | 2010-03-03 | Semiconductor laser element and method of manufacturing semiconductor laser element |
US14/460,090 US9478944B2 (en) | 2007-09-04 | 2014-08-14 | Semiconductor laser element and method of manufacturing semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/067231 WO2009031206A1 (ja) | 2007-09-04 | 2007-09-04 | 半導体レーザ素子および半導体レーザ素子製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/716,315 Continuation US8842707B2 (en) | 2007-09-04 | 2010-03-03 | Semiconductor laser element and method of manufacturing semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009031206A1 true WO2009031206A1 (ja) | 2009-03-12 |
Family
ID=40428529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/067231 WO2009031206A1 (ja) | 2007-09-04 | 2007-09-04 | 半導体レーザ素子および半導体レーザ素子製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8842707B2 (ja) |
EP (1) | EP2187488B1 (ja) |
JP (1) | JP5128604B2 (ja) |
CN (1) | CN101796699B (ja) |
WO (1) | WO2009031206A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011135803A1 (en) * | 2010-04-26 | 2011-11-03 | Furukawa Electric Co., Ltd. | Semiconductor laser element and method of manufacturing the same |
WO2014126164A1 (ja) * | 2013-02-13 | 2014-08-21 | 古河電気工業株式会社 | 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法 |
EP2453535A4 (en) * | 2009-07-06 | 2018-04-04 | Furukawa Electric Co., Ltd. | Method for manufacturing semiconductor optical device, method for manufacturing semiconductor optical laser element, and semiconductor optical device |
US10033154B2 (en) | 2010-03-03 | 2018-07-24 | Furukawa Electronic Co., Ltd. | Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2187488B1 (en) * | 2007-09-04 | 2017-08-16 | The Furukawa Electric Co., Ltd. | Semiconductor laser element, and semiconductor laser element manufacturing method |
JP5520986B2 (ja) * | 2012-03-06 | 2014-06-11 | 古河電気工業株式会社 | 半導体レーザ素子の製造方法 |
JP6160141B2 (ja) * | 2012-03-22 | 2017-07-12 | 日亜化学工業株式会社 | 半導体レーザ装置 |
JP6655538B2 (ja) * | 2014-08-12 | 2020-02-26 | 古河電気工業株式会社 | 半導体素子 |
WO2019176498A1 (ja) * | 2018-03-13 | 2019-09-19 | 株式会社フジクラ | 半導体光素子、半導体光素子形成用構造体及びこれを用いた半導体光素子の製造方法 |
JP7404267B2 (ja) * | 2018-11-15 | 2023-12-25 | ソニーセミコンダクタソリューションズ株式会社 | 半導体レーザおよび電子機器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07122816A (ja) | 1993-10-15 | 1995-05-12 | Internatl Business Mach Corp <Ibm> | 半導体量子井戸型レーザ及びその製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5228047A (en) * | 1990-09-21 | 1993-07-13 | Sharp Kabushiki Kaisha | Semiconductor laser device and a method for producing the same |
CN1111840A (zh) * | 1991-05-15 | 1995-11-15 | 明尼苏达州采矿制造公司 | 蓝-绿激光二极管的制造方法 |
US5568501A (en) * | 1993-11-01 | 1996-10-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and method for producing the same |
JP3676965B2 (ja) * | 1999-08-31 | 2005-07-27 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
JP3911140B2 (ja) * | 2001-09-05 | 2007-05-09 | シャープ株式会社 | 半導体レーザの製造方法 |
JP2003198059A (ja) * | 2001-12-27 | 2003-07-11 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
US6674778B1 (en) * | 2002-01-09 | 2004-01-06 | Sandia Corporation | Electrically pumped edge-emitting photonic bandgap semiconductor laser |
JP2004119817A (ja) * | 2002-09-27 | 2004-04-15 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
JP4500516B2 (ja) * | 2002-12-13 | 2010-07-14 | 三菱電機株式会社 | 半導体レーザ素子およびその製造方法 |
JP4128898B2 (ja) * | 2003-04-18 | 2008-07-30 | 古河電気工業株式会社 | 半導体素子の製造方法 |
JP4833664B2 (ja) * | 2003-12-15 | 2011-12-07 | 古河電気工業株式会社 | 半導体素子の製造方法 |
US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
JP2007066981A (ja) * | 2005-08-29 | 2007-03-15 | Toshiba Corp | 半導体装置 |
JP2007096267A (ja) * | 2005-08-30 | 2007-04-12 | Hitachi Cable Ltd | 半導体発光素子用エピタキシャルウェハ及びその製造方法並びに半導体発光素子 |
JP4694342B2 (ja) | 2005-10-14 | 2011-06-08 | 三菱電機株式会社 | 半導体レーザ装置およびその製造方法 |
JP2007242718A (ja) | 2006-03-06 | 2007-09-20 | Furukawa Electric Co Ltd:The | 半導体レーザ素子および半導体レーザ素子の製造方法 |
EP2187488B1 (en) * | 2007-09-04 | 2017-08-16 | The Furukawa Electric Co., Ltd. | Semiconductor laser element, and semiconductor laser element manufacturing method |
-
2007
- 2007-09-04 EP EP07806686.7A patent/EP2187488B1/en active Active
- 2007-09-04 JP JP2009531045A patent/JP5128604B2/ja active Active
- 2007-09-04 CN CN2007801005049A patent/CN101796699B/zh active Active
- 2007-09-04 WO PCT/JP2007/067231 patent/WO2009031206A1/ja active Application Filing
-
2010
- 2010-03-03 US US12/716,315 patent/US8842707B2/en active Active
-
2014
- 2014-08-14 US US14/460,090 patent/US9478944B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07122816A (ja) | 1993-10-15 | 1995-05-12 | Internatl Business Mach Corp <Ibm> | 半導体量子井戸型レーザ及びその製造方法 |
Non-Patent Citations (2)
Title |
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HIDEHIRO TANIGUCHI ET AL.: "IFVD Mado Kozo ni yoru 9xx nm Koshutsuryoku Handotai Laser", IEICE TECHNICAL REPORT, vol. 106, no. 404, 1 December 2006 (2006-12-01), pages 49 - 53, XP008134028 * |
See also references of EP2187488A4 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2453535A4 (en) * | 2009-07-06 | 2018-04-04 | Furukawa Electric Co., Ltd. | Method for manufacturing semiconductor optical device, method for manufacturing semiconductor optical laser element, and semiconductor optical device |
US10033154B2 (en) | 2010-03-03 | 2018-07-24 | Furukawa Electronic Co., Ltd. | Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element |
WO2011135803A1 (en) * | 2010-04-26 | 2011-11-03 | Furukawa Electric Co., Ltd. | Semiconductor laser element and method of manufacturing the same |
JP2011233644A (ja) * | 2010-04-26 | 2011-11-17 | Furukawa Electric Co Ltd:The | 半導体レーザ素子および半導体レーザ素子の製造方法 |
US8660160B2 (en) | 2010-04-26 | 2014-02-25 | Furukawa Electric Co., Ltd. | Semiconductor laser element and method of manufacturing the same |
WO2014126164A1 (ja) * | 2013-02-13 | 2014-08-21 | 古河電気工業株式会社 | 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法 |
JP5731084B2 (ja) * | 2013-02-13 | 2015-06-10 | 古河電気工業株式会社 | 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法 |
US10069280B2 (en) | 2013-02-13 | 2018-09-04 | Furukawa Electric Co., Ltd. | Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
CN101796699B (zh) | 2012-12-26 |
EP2187488B1 (en) | 2017-08-16 |
US20100195685A1 (en) | 2010-08-05 |
EP2187488A1 (en) | 2010-05-19 |
JPWO2009031206A1 (ja) | 2010-12-09 |
EP2187488A4 (en) | 2014-07-09 |
JP5128604B2 (ja) | 2013-01-23 |
US9478944B2 (en) | 2016-10-25 |
CN101796699A (zh) | 2010-08-04 |
US8842707B2 (en) | 2014-09-23 |
US20160276804A1 (en) | 2016-09-22 |
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