WO2009028458A1 - 載置台構造及び処理装置 - Google Patents

載置台構造及び処理装置 Download PDF

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Publication number
WO2009028458A1
WO2009028458A1 PCT/JP2008/065110 JP2008065110W WO2009028458A1 WO 2009028458 A1 WO2009028458 A1 WO 2009028458A1 JP 2008065110 W JP2008065110 W JP 2008065110W WO 2009028458 A1 WO2009028458 A1 WO 2009028458A1
Authority
WO
WIPO (PCT)
Prior art keywords
mounting table
table structure
dielectric material
treating
treating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065110
Other languages
English (en)
French (fr)
Inventor
Sumi Tanaka
Hiroo Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN200880104506XA priority Critical patent/CN101790786B/zh
Publication of WO2009028458A1 publication Critical patent/WO2009028458A1/ja
Priority to US12/713,226 priority patent/US20100163188A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

　載置台に大きな熱応力が発生することを防止して、この載置台自体が破損することを防止することができると共に、腐食防止用のパージガスの供給量を抑制することができる載置台構造を提供する。 処理装置（２０）の処理容器（２２）内に設けられ、処理すべき被処理体（Ｗ）を載置するための載置台構造（５４）は、加熱手段（６４）が設けられた誘電体よりなる載置台（５８）と、前記処理容器の底部側から上方へ延び前記載置台（５８）を着脱可能に支持する誘電体よりなる円筒状の支柱（５６）とを備えている。前記載置台（５８）の下面に、前記支柱の直径よりも小さい直径を有する誘電体よりなる円筒状の保護管（６０）が接合されている。前記保護管（６０）内に、前記載置台（５８）に届く上端を有する機能棒体（６２）が挿通されている。
PCT/JP2008/065110 2007-08-28 2008-08-25 載置台構造及び処理装置 Ceased WO2009028458A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880104506XA CN101790786B (zh) 2007-08-28 2008-08-25 载置台结构及处理装置
US12/713,226 US20100163188A1 (en) 2007-08-28 2010-02-26 Mounting table structure and processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007221525A JP2009054871A (ja) 2007-08-28 2007-08-28 載置台構造及び処理装置
JP2007-221525 2007-08-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/713,226 Continuation US20100163188A1 (en) 2007-08-28 2010-02-26 Mounting table structure and processing apparatus

Publications (1)

Publication Number Publication Date
WO2009028458A1 true WO2009028458A1 (ja) 2009-03-05

Family

ID=40387178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065110 Ceased WO2009028458A1 (ja) 2007-08-28 2008-08-25 載置台構造及び処理装置

Country Status (6)

Country Link
US (1) US20100163188A1 (ja)
JP (1) JP2009054871A (ja)
KR (1) KR20100067654A (ja)
CN (1) CN101790786B (ja)
TW (1) TW200926348A (ja)
WO (1) WO2009028458A1 (ja)

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US20110139070A1 (en) * 2009-12-11 2011-06-16 Hitachi-Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US20120160807A1 (en) * 2010-12-28 2012-06-28 Spansion Llc System, method and apparatus for reducing plasma noise on power path of electrostatic chuck
CN114589523A (zh) * 2022-03-04 2022-06-07 江苏财经职业技术学院 一种用于机械加工的故障检测报警系统

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JP2011165891A (ja) * 2010-02-09 2011-08-25 Tokyo Electron Ltd 載置台構造及び処理装置
JP2012054508A (ja) * 2010-09-03 2012-03-15 Tokyo Electron Ltd 成膜装置
JP2012151433A (ja) * 2010-12-28 2012-08-09 Tokyo Electron Ltd 熱処理装置
WO2012134605A1 (en) * 2011-03-25 2012-10-04 Applied Materials, Inc. Method and apparatus for thermocouple installation or replacement in a substrate support
JP5942380B2 (ja) * 2011-10-20 2016-06-29 住友電気工業株式会社 半導体製造装置用ウエハ保持体
JP5973731B2 (ja) * 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
FR3003999A1 (fr) * 2013-03-29 2014-10-03 Semco Engineering Mandrin electrostatique a dispositif de serrage a effort controle.
US10236194B2 (en) * 2013-04-30 2019-03-19 Semes Co., Ltd. Supporting unit and substrate treatment apparatus
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
TW201518538A (zh) 2013-11-11 2015-05-16 應用材料股份有限公司 像素化冷卻溫度控制的基板支撐組件
US20150194326A1 (en) * 2014-01-07 2015-07-09 Applied Materials, Inc. Pecvd ceramic heater with wide range of operating temperatures
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
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JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
KR101758087B1 (ko) * 2014-07-23 2017-07-14 어플라이드 머티어리얼스, 인코포레이티드 튜닝가능한 온도 제어되는 기판 지지 어셈블리
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
US9888528B2 (en) 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
US9738975B2 (en) * 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making
US20170178758A1 (en) * 2015-12-18 2017-06-22 Applied Materials, Inc. Uniform wafer temperature achievement in unsymmetric chamber environment
US10345802B2 (en) * 2016-02-17 2019-07-09 Lam Research Corporation Common terminal heater for ceramic pedestals used in semiconductor fabrication
KR102137719B1 (ko) * 2016-03-25 2020-07-24 어플라이드 머티어리얼스, 인코포레이티드 Rf 전력 전달이 향상된 세라믹 가열기
JP6560150B2 (ja) * 2016-03-28 2019-08-14 日本碍子株式会社 ウエハ載置装置
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
JP6758143B2 (ja) * 2016-09-29 2020-09-23 日本特殊陶業株式会社 加熱装置
JP6698502B2 (ja) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6812224B2 (ja) * 2016-12-08 2021-01-13 東京エレクトロン株式会社 基板処理装置及び載置台
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10674566B2 (en) * 2017-03-02 2020-06-02 Coorstek Kk Planar heater
WO2018163935A1 (ja) * 2017-03-06 2018-09-13 日本碍子株式会社 ウエハ支持台
US10147610B1 (en) * 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
WO2019008889A1 (ja) * 2017-07-07 2019-01-10 住友電気工業株式会社 半導体基板加熱用の基板載置台
KR20260008190A (ko) * 2018-01-31 2026-01-15 램 리써치 코포레이션 정전 척 페데스탈 전압 분리
WO2020129798A1 (ja) * 2018-12-20 2020-06-25 日本碍子株式会社 セラミックヒータ
CN110265323B (zh) * 2019-05-31 2021-09-03 拓荆科技股份有限公司 具有接点阵列的晶圆加热座
KR102807409B1 (ko) * 2019-08-08 2025-05-15 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 부재
WO2021145110A1 (ja) * 2020-01-15 2021-07-22 日本特殊陶業株式会社 保持装置
CN113823582B (zh) * 2020-06-21 2025-10-24 拓荆科技股份有限公司 用于处理站阻抗调节的装置、系统和方法
US11699602B2 (en) 2020-07-07 2023-07-11 Applied Materials, Inc. Substrate support assemblies and components
KR102821950B1 (ko) * 2020-12-23 2025-06-17 세메스 주식회사 정전 척 어셈블리용 냉각 장치
KR102732074B1 (ko) * 2022-02-22 2024-11-20 주식회사 테스 기판지지유닛

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Publication number Priority date Publication date Assignee Title
US20110139070A1 (en) * 2009-12-11 2011-06-16 Hitachi-Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US9305820B2 (en) * 2009-12-11 2016-04-05 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US10755962B2 (en) 2009-12-11 2020-08-25 Kokusai Electric Corporation Substrate processing apparatus and method of manufacturing semiconductor device
US20120160807A1 (en) * 2010-12-28 2012-06-28 Spansion Llc System, method and apparatus for reducing plasma noise on power path of electrostatic chuck
CN114589523A (zh) * 2022-03-04 2022-06-07 江苏财经职业技术学院 一种用于机械加工的故障检测报警系统

Also Published As

Publication number Publication date
JP2009054871A (ja) 2009-03-12
TW200926348A (en) 2009-06-16
CN101790786B (zh) 2012-07-18
CN101790786A (zh) 2010-07-28
KR20100067654A (ko) 2010-06-21
US20100163188A1 (en) 2010-07-01

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