WO2009028134A1 - 単結晶直径の検出方法および単結晶引上げ装置 - Google Patents

単結晶直径の検出方法および単結晶引上げ装置 Download PDF

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Publication number
WO2009028134A1
WO2009028134A1 PCT/JP2008/002038 JP2008002038W WO2009028134A1 WO 2009028134 A1 WO2009028134 A1 WO 2009028134A1 JP 2008002038 W JP2008002038 W JP 2008002038W WO 2009028134 A1 WO2009028134 A1 WO 2009028134A1
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WO
WIPO (PCT)
Prior art keywords
single crystal
diameter
camera
load cell
pull
Prior art date
Application number
PCT/JP2008/002038
Other languages
English (en)
French (fr)
Inventor
Takahiro Yanagimachi
Susumu Sonokawa
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to CN200880102139XA priority Critical patent/CN101772595B/zh
Priority to KR1020107003109A priority patent/KR101483435B1/ko
Priority to US12/452,492 priority patent/US8441623B2/en
Priority to DE112008002237.2T priority patent/DE112008002237B4/de
Publication of WO2009028134A1 publication Critical patent/WO2009028134A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

　本発明は、チョクラルスキー法により育成される単結晶の直径を検出する方法であって、カメラとロードセルの両方によってそれぞれ単結晶の直径を検出し、カメラ検出直径とロードセルにより算出した直径との差と、前記単結晶の成長速度に応じて予め求められた補正係数αとによって前記カメラ検出直径を補正し、該補正によって得られた値を前記単結晶の直径とすることを特徴とする単結晶直径の検出方法および引上げる単結晶の直径を検出するためのカメラとロードセルの両方を具備する単結晶引上げ装置である。これによって、大口径、高重量結晶の直径の測定精度を向上し、歩留まりの向上と品質ばらつきの低減を達成することができるようになる。
PCT/JP2008/002038 2007-08-31 2008-07-30 単結晶直径の検出方法および単結晶引上げ装置 WO2009028134A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880102139XA CN101772595B (zh) 2007-08-31 2008-07-30 单晶直径的检测方法及单晶提拉装置
KR1020107003109A KR101483435B1 (ko) 2007-08-31 2008-07-30 단결정 직경의 검출방법 및 단결정 인상장치
US12/452,492 US8441623B2 (en) 2007-08-31 2008-07-30 Method for detecting the diameter of a single crystal and single crystal pulling apparatus
DE112008002237.2T DE112008002237B4 (de) 2007-08-31 2008-07-30 Verfahren zur Erfassung des Durchmessers eines Einkristalls

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007225679A JP5104129B2 (ja) 2007-08-31 2007-08-31 単結晶直径の検出方法および単結晶引上げ装置
JP2007-225679 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028134A1 true WO2009028134A1 (ja) 2009-03-05

Family

ID=40386877

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002038 WO2009028134A1 (ja) 2007-08-31 2008-07-30 単結晶直径の検出方法および単結晶引上げ装置

Country Status (7)

Country Link
US (1) US8441623B2 (ja)
JP (1) JP5104129B2 (ja)
KR (1) KR101483435B1 (ja)
CN (1) CN101772595B (ja)
DE (1) DE112008002237B4 (ja)
TW (1) TWI413712B (ja)
WO (1) WO2009028134A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100263585A1 (en) * 2009-03-27 2010-10-21 Ken Hamada Method of controlling single crystal diameter

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6197680B2 (ja) 2014-02-12 2017-09-20 信越半導体株式会社 シリコン単結晶製造装置
KR101665827B1 (ko) 2014-12-30 2016-10-12 주식회사 엘지실트론 잉곳 계면의 형상을 제어할 수 있는 단결정 성장 방법
CN106637389A (zh) * 2016-12-07 2017-05-10 内蒙古中环光伏材料有限公司 一种直拉单晶产业化直径生长自控的工艺方法
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置
KR102065837B1 (ko) 2018-01-09 2020-01-13 에스케이실트론 주식회사 단결정 잉곳 성장용 온도제어장치 및 이에 적용된 온도제어방법
CN110528070B (zh) * 2018-05-25 2021-07-06 隆基绿能科技股份有限公司 直拉单晶直径测量方法
KR102244480B1 (ko) * 2019-07-22 2021-04-26 에스케이실트론 주식회사 구동부 계측 장치 및 그를 구비한 실리콘 단결정 성장 장치
US20230023541A1 (en) 2019-12-18 2023-01-26 Sumco Corporation System and method for producing single crystal
CN111593403B (zh) * 2020-05-07 2021-04-27 宁夏富乐德石英材料有限公司 间接控制拉晶直径的方法及直拉单晶晶棒的生产方法
CN112760706A (zh) * 2020-12-23 2021-05-07 西安奕斯伟硅片技术有限公司 等径生长控制系统和等径生长控制方法
KR102612255B1 (ko) * 2023-03-14 2023-12-11 비씨엔씨 주식회사 실린더 형상의 실리콘 잉곳 제조 장치 및 제조 방법

Citations (4)

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JPS61286296A (ja) * 1985-06-07 1986-12-16 Sumitomo Electric Ind Ltd 半導体単結晶の成長方法および装置
JPH0264089A (ja) * 1988-08-29 1990-03-05 Kokusai Electric Co Ltd 単結晶引上げ装置の直径計測方法及び装置
JP2003176199A (ja) * 2001-12-06 2003-06-24 Toshiba Ceramics Co Ltd 単結晶引上げ装置および引上げ方法
JP2004345907A (ja) * 2003-05-22 2004-12-09 Toshiba Ceramics Co Ltd 半導体単結晶成長装置

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JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
JP3109564B2 (ja) * 1995-03-27 2000-11-20 大倉電気株式会社 成長結晶体の重量測定装置
JP3615291B2 (ja) 1995-12-25 2005-02-02 信越半導体株式会社 引上げ結晶重量測定装置
US6241818B1 (en) * 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
JP2004035352A (ja) 2002-07-05 2004-02-05 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置
TW200706711A (en) 2005-08-12 2007-02-16 Komatsu Denshi Kinzoku Kk Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61286296A (ja) * 1985-06-07 1986-12-16 Sumitomo Electric Ind Ltd 半導体単結晶の成長方法および装置
JPH0264089A (ja) * 1988-08-29 1990-03-05 Kokusai Electric Co Ltd 単結晶引上げ装置の直径計測方法及び装置
JP2003176199A (ja) * 2001-12-06 2003-06-24 Toshiba Ceramics Co Ltd 単結晶引上げ装置および引上げ方法
JP2004345907A (ja) * 2003-05-22 2004-12-09 Toshiba Ceramics Co Ltd 半導体単結晶成長装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100263585A1 (en) * 2009-03-27 2010-10-21 Ken Hamada Method of controlling single crystal diameter
US8968468B2 (en) * 2009-03-27 2015-03-03 Sumco Corporation Method of controlling single crystal diameter

Also Published As

Publication number Publication date
JP2009057236A (ja) 2009-03-19
KR20100049062A (ko) 2010-05-11
TW200930847A (en) 2009-07-16
JP5104129B2 (ja) 2012-12-19
US8441623B2 (en) 2013-05-14
CN101772595B (zh) 2012-07-25
DE112008002237B4 (de) 2019-01-31
KR101483435B1 (ko) 2015-01-19
DE112008002237T5 (de) 2010-07-08
CN101772595A (zh) 2010-07-07
TWI413712B (zh) 2013-11-01
US20100128253A1 (en) 2010-05-27

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