TWI800474B - 單晶矽錠生產過程之樣品棒生長和電阻率測量之方法 - Google Patents

單晶矽錠生產過程之樣品棒生長和電阻率測量之方法 Download PDF

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Publication number
TWI800474B
TWI800474B TW111150725A TW111150725A TWI800474B TW I800474 B TWI800474 B TW I800474B TW 111150725 A TW111150725 A TW 111150725A TW 111150725 A TW111150725 A TW 111150725A TW I800474 B TWI800474 B TW I800474B
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Taiwan
Prior art keywords
single crystal
crystal silicon
silicon ingot
measurement during
during single
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TW111150725A
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English (en)
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TW202315989A (zh
Inventor
卡瑞喜瑪 瑪莉 哈德森
傑伍 萊歐
理查 J 菲利浦
羅伯特 史丹利
李衡敏
李榮中
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環球晶圓股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW111150725A 2018-06-27 2019-06-26 單晶矽錠生產過程之樣品棒生長和電阻率測量之方法 TWI800474B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/020,698 2018-06-27
US16/020,698 US10793969B2 (en) 2018-06-27 2018-06-27 Sample rod growth and resistivity measurement during single crystal silicon ingot production

Publications (2)

Publication Number Publication Date
TW202315989A TW202315989A (zh) 2023-04-16
TWI800474B true TWI800474B (zh) 2023-04-21

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TW108122455A TWI791859B (zh) 2018-06-27 2019-06-26 單晶矽錠生產過程之樣品棒生長和電阻率測量之方法
TW111150725A TWI800474B (zh) 2018-06-27 2019-06-26 單晶矽錠生產過程之樣品棒生長和電阻率測量之方法

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Country Status (8)

Country Link
US (1) US10793969B2 (zh)
EP (2) EP4317546A3 (zh)
JP (1) JP7467362B2 (zh)
KR (2) KR20210044190A (zh)
CN (1) CN112469850A (zh)
SG (1) SG11202012909QA (zh)
TW (2) TWI791859B (zh)
WO (1) WO2020005901A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10499357B1 (en) 2018-08-09 2019-12-03 Nec Corporation Method and system for transmission of SUSI in the NAS procedure
WO2020131458A1 (en) * 2018-12-21 2020-06-25 Globalwafers Co., Ltd. Sample rod center slab resistivity measurement during single crystal silicon ingot production
US11739437B2 (en) 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Citations (7)

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US5449883A (en) * 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
US5505157A (en) * 1993-08-25 1996-04-09 Fujitsu Limited Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods
TW200720500A (en) * 2005-05-19 2007-06-01 Memc Electronic Materials A high resistivity silicon structure and a process for the preparation thereof
CN102181919A (zh) * 2011-04-13 2011-09-14 天津市环欧半导体材料技术有限公司 一种控制直拉硅单晶头部电阻率的方法
JP2012129308A (ja) * 2010-12-14 2012-07-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法
CN103173867A (zh) * 2013-04-16 2013-06-26 江西豪安能源科技有限公司 一种消除太阳能单晶头部热施主导致电阻失真的方法
US20170176105A1 (en) * 2015-12-21 2017-06-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for calibrating an annealing furnace used to form thermal donors

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JPS6395629A (ja) 1986-10-13 1988-04-26 Hitachi Ltd 半導体単結晶インゴツトの加工指示装置
JP2869300B2 (ja) * 1992-08-07 1999-03-10 三菱マテリアル株式会社 半導体ウェーハの熱処理装置
JP4370499B2 (ja) * 2002-12-27 2009-11-25 信越半導体株式会社 文字読み取り方法及び装置並びに結晶検査方法
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
WO2013079619A1 (en) 2011-12-01 2013-06-06 Biosurfit, S.A. Photometric device and method
JP5817542B2 (ja) * 2012-01-12 2015-11-18 信越半導体株式会社 シリコン基板の製造方法
JP6168011B2 (ja) * 2014-08-19 2017-07-26 信越半導体株式会社 単結晶育成装置及びその装置を用いた単結晶育成方法
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449883A (en) * 1992-08-07 1995-09-12 Mitsubishi Materials Corporation Continuous heat treatment system of semiconductor wafers for eliminating thermal donor
US5505157A (en) * 1993-08-25 1996-04-09 Fujitsu Limited Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods
TW200720500A (en) * 2005-05-19 2007-06-01 Memc Electronic Materials A high resistivity silicon structure and a process for the preparation thereof
JP2012129308A (ja) * 2010-12-14 2012-07-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法
CN102181919A (zh) * 2011-04-13 2011-09-14 天津市环欧半导体材料技术有限公司 一种控制直拉硅单晶头部电阻率的方法
CN103173867A (zh) * 2013-04-16 2013-06-26 江西豪安能源科技有限公司 一种消除太阳能单晶头部热施主导致电阻失真的方法
US20170176105A1 (en) * 2015-12-21 2017-06-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for calibrating an annealing furnace used to form thermal donors

Also Published As

Publication number Publication date
EP3814555A1 (en) 2021-05-05
TWI791859B (zh) 2023-02-11
EP4317546A3 (en) 2024-03-20
EP3814555B1 (en) 2023-12-27
US10793969B2 (en) 2020-10-06
JP7467362B2 (ja) 2024-04-15
EP4317546A2 (en) 2024-02-07
JP2021529147A (ja) 2021-10-28
WO2020005901A1 (en) 2020-01-02
SG11202012909QA (en) 2021-01-28
KR20240005130A (ko) 2024-01-11
KR20210044190A (ko) 2021-04-22
US20200002836A1 (en) 2020-01-02
CN112469850A (zh) 2021-03-09
TW202001011A (zh) 2020-01-01
TW202315989A (zh) 2023-04-16

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