WO2009025336A1 - Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt - Google Patents

Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt Download PDF

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Publication number
WO2009025336A1
WO2009025336A1 PCT/JP2008/064949 JP2008064949W WO2009025336A1 WO 2009025336 A1 WO2009025336 A1 WO 2009025336A1 JP 2008064949 W JP2008064949 W JP 2008064949W WO 2009025336 A1 WO2009025336 A1 WO 2009025336A1
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WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
crystal wafer
grown
Prior art date
Application number
PCT/JP2008/064949
Other languages
English (en)
Japanese (ja)
Inventor
Manabu Nishimoto
Shigeru Umeno
Masataka Hourai
Wataru Sugimura
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to JP2009529062A priority Critical patent/JP5246163B2/ja
Publication of WO2009025336A1 publication Critical patent/WO2009025336A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

Cette invention porte sur un procédé de fabrication d'une tranche de monocristal de silicium pour IGBT, qui peut élargir la marge de vitesse de traction et permet de produire des tranches à faible teneur en oxygène n'ayant pas de variation significative de la résistivité électrique, en un court laps de temps, et sur une tranche de monocristal de silicium pour IGBT. Dans un procédé de Chokralsky, un dopant de type n est ajouté à une masse fondue de silicium, et un monocristal est amené à pousser à une vitesse de traction de monocristal de silicium telle qu'un monocristal de silicium exempt de défauts de croissance peut être tiré. Dans ce cas, après charge d'une matière polycristalline initiale, le monocristal ayant une concentration en oxygène interstitiel de pas plus de 8,5 x 1017 atomes/cm3 est amené à pousser tout en fournissant une matière supplémentaire.
PCT/JP2008/064949 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt WO2009025336A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529062A JP5246163B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-215331 2007-08-21
JP2007215331 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025336A1 true WO2009025336A1 (fr) 2009-02-26

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Family Applications (1)

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PCT/JP2008/064949 WO2009025336A1 (fr) 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt

Country Status (2)

Country Link
JP (1) JP5246163B2 (fr)
WO (1) WO2009025336A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010208877A (ja) * 2009-03-09 2010-09-24 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
JP2010265143A (ja) * 2009-05-15 2010-11-25 Sumco Corp シリコン単結晶の製造方法及びシリコンウェーハの製造方法
JP2011046565A (ja) * 2009-08-27 2011-03-10 Sharp Corp 単結晶シリコンインゴット、単結晶シリコンウェハ、単結晶シリコン太陽電池セル、および単結晶シリコンインゴットの製造方法
JP2011093778A (ja) * 2009-09-29 2011-05-12 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハおよびシリコン単結晶の製造方法
JP2013163642A (ja) * 2013-05-28 2013-08-22 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
EP2697412A2 (fr) * 2011-04-14 2014-02-19 GT Advanced CZ LLC Lingot de silicium comportant de multiples dopants uniformes et procédé et appareil de production de ce lingot
WO2021050176A1 (fr) * 2019-09-13 2021-03-18 Globalwafers Co., Ltd. Procédés de croissance d'un lingot de silicium monocristallin dopé à l'azote à l'aide d'un procédé de czochralski continu et lingot de silicium monocristallin ainsi obtenu
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
WO2022071014A1 (fr) * 2020-09-29 2022-04-07 株式会社Sumco Procédé de production de monocristal de silicium
WO2023051702A1 (fr) * 2021-09-30 2023-04-06 西安奕斯伟材料科技有限公司 Dispositif et procédé de fabrication de silicium monocristallin dopé à l'azote
KR102658843B1 (ko) 2019-09-13 2024-04-19 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03164494A (ja) * 1989-08-23 1991-07-16 Nkk Corp シリコン単結晶の製造方法及びその装置
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100472001C (zh) * 2003-02-25 2009-03-25 株式会社上睦可 硅晶片、soi衬底、硅单晶生长方法，硅晶片制造方法及soi衬底制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03164494A (ja) * 1989-08-23 1991-07-16 Nkk Corp シリコン単結晶の製造方法及びその装置
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010208877A (ja) * 2009-03-09 2010-09-24 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
JP2010265143A (ja) * 2009-05-15 2010-11-25 Sumco Corp シリコン単結晶の製造方法及びシリコンウェーハの製造方法
JP2011046565A (ja) * 2009-08-27 2011-03-10 Sharp Corp 単結晶シリコンインゴット、単結晶シリコンウェハ、単結晶シリコン太陽電池セル、および単結晶シリコンインゴットの製造方法
JP2011093778A (ja) * 2009-09-29 2011-05-12 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハおよびシリコン単結晶の製造方法
EP2697412A2 (fr) * 2011-04-14 2014-02-19 GT Advanced CZ LLC Lingot de silicium comportant de multiples dopants uniformes et procédé et appareil de production de ce lingot
EP2697412A4 (fr) * 2011-04-14 2014-09-03 Gt Advanced Cz Llc Lingot de silicium comportant de multiples dopants uniformes et procédé et appareil de production de ce lingot
JP2013163642A (ja) * 2013-05-28 2013-08-22 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
CN114555871A (zh) * 2019-09-13 2022-05-27 环球晶圆股份有限公司 使用连续柴可斯基方法生长氮掺杂单晶硅锭的方法以及通过此方法生长的单晶硅锭
US11680335B2 (en) 2019-09-13 2023-06-20 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
KR102658843B1 (ko) 2019-09-13 2024-04-19 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳
KR20220062052A (ko) * 2019-09-13 2022-05-13 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳
WO2021050176A1 (fr) * 2019-09-13 2021-03-18 Globalwafers Co., Ltd. Procédés de croissance d'un lingot de silicium monocristallin dopé à l'azote à l'aide d'un procédé de czochralski continu et lingot de silicium monocristallin ainsi obtenu
CN115341264A (zh) * 2019-09-13 2022-11-15 环球晶圆股份有限公司 使用连续柴可斯基方法生长氮掺杂单晶硅锭的方法以及通过此方法生长的单晶硅锭
KR102647797B1 (ko) * 2019-09-13 2024-03-15 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳
EP4245894A3 (fr) * 2019-09-13 2024-02-14 GlobalWafers Co., Ltd. Procédé de croissance d'un lingot de silicium monocristallin dopé à l'azote utilisant un procédé de czochralski continu
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11680336B2 (en) 2019-09-13 2023-06-20 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
EP4245895A3 (fr) * 2019-09-13 2023-11-15 GlobalWafers Co., Ltd. Procédé de croissance d'un lingot de silicium monocristallin dopé à l'azote utilisant un procédé de czochralski continu
TWI826717B (zh) * 2019-09-13 2023-12-21 環球晶圓股份有限公司 使用連續柴可斯基方法成長氮摻雜單晶矽錠之方法以及使用該方法成長之單晶矽錠
TWI828604B (zh) * 2019-09-13 2024-01-01 環球晶圓股份有限公司 使用連續柴可斯基方法成長氮摻雜單晶矽錠之方法以及使用該方法成長之單晶矽錠
TWI784689B (zh) * 2020-09-29 2022-11-21 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法
WO2022071014A1 (fr) * 2020-09-29 2022-04-07 株式会社Sumco Procédé de production de monocristal de silicium
WO2023051702A1 (fr) * 2021-09-30 2023-04-06 西安奕斯伟材料科技有限公司 Dispositif et procédé de fabrication de silicium monocristallin dopé à l'azote

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JP5246163B2 (ja) 2013-07-24

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