WO2009025337A1 - Tranche de monocristal de silicium pour igbt, procédé de fabrication d'une tranche de monocristal de silicium pour igbt, et procédé pour assurer la résistivité électrique d'une tranche de monocristal de silicium pour igbt - Google Patents

Tranche de monocristal de silicium pour igbt, procédé de fabrication d'une tranche de monocristal de silicium pour igbt, et procédé pour assurer la résistivité électrique d'une tranche de monocristal de silicium pour igbt Download PDF

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Publication number
WO2009025337A1
WO2009025337A1 PCT/JP2008/064950 JP2008064950W WO2009025337A1 WO 2009025337 A1 WO2009025337 A1 WO 2009025337A1 JP 2008064950 W JP2008064950 W JP 2008064950W WO 2009025337 A1 WO2009025337 A1 WO 2009025337A1
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WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
crystal wafer
atoms
Prior art date
Application number
PCT/JP2008/064950
Other languages
English (en)
Japanese (ja)
Inventor
Shigeru Umeno
Toshiaki Ono
Manabu Nishimoto
Masataka Hourai
Yoshihiro Koga
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to JP2009529063A priority Critical patent/JP5321460B2/ja
Publication of WO2009025337A1 publication Critical patent/WO2009025337A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Cette invention porte sur une tranche de monocristal de silicium pour IGBT, comprenant un monocristal de silicium qui a poussé par une méthode de Chokralsky qui peut étendre une marge de vitesse de traction et permet de produire des tranches n'ayant pas de variation significative de la résistivité électrique. Le monocristal de silicium est dopé par de l'azote à pas moins de 5 x 1012 atomes/cm3 et pas plus de 9 x 1014 atomes/cm3, et la concentration d'un donneur dérivé d'azote est amenée à pas plus de 5 x 1012 atomes/cm3. Dans la zone totale dans la direction du diamètre de grain cristallin, les défauts COP et les grappes de dislocation sont exclus, la concentration en oxygène interstitiel est non supérieure à 4 x 1017 atomes/cm3, et la variation de la résistivité électrique à l'intérieur d'un plan de tranche n'est pas supérieure à 5 %.
PCT/JP2008/064950 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt, procédé de fabrication d'une tranche de monocristal de silicium pour igbt, et procédé pour assurer la résistivité électrique d'une tranche de monocristal de silicium pour igbt WO2009025337A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529063A JP5321460B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215335 2007-08-21
JP2007-215335 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025337A1 true WO2009025337A1 (fr) 2009-02-26

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Country Status (2)

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JP (1) JP5321460B2 (fr)
WO (1) WO2009025337A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (fr) * 2010-12-28 2012-07-05 Siltronic Ag Procédé de fabrication d'un monocristal de silicium, monocristal de silicium et tranche
WO2012101957A1 (fr) * 2011-01-24 2012-08-02 信越半導体株式会社 Procédé de production de plaquette de silicium monocristallin et plaquette recuite
WO2013035248A1 (fr) * 2011-09-08 2013-03-14 信越半導体株式会社 Procédé permettant de calculer la concentration en azote et procédé permettant de calculer l'ampleur du décalage de résistivité dans un monocristal de silicium
EP2824222A1 (fr) * 2013-07-12 2015-01-14 GLobalWafers Japan Co., Ltd. Monocristal de silicium et son procédé de fabrication
WO2015087507A1 (fr) * 2013-12-10 2015-06-18 株式会社アルバック Transistor bipolaire à grille isolée et son procédé de fabrication
JP2020033200A (ja) * 2018-08-27 2020-03-05 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
CN110892512A (zh) * 2017-06-23 2020-03-17 胜高股份有限公司 硅晶片的热施主生成行为预测方法、硅晶片的评价方法及硅晶片的制备方法
JP2020202321A (ja) * 2019-06-12 2020-12-17 サンケン電気株式会社 半導体装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106591939A (zh) 2015-10-15 2017-04-26 上海新昇半导体科技有限公司 单晶硅锭及晶圆的形成方法
CN107151817A (zh) 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107151818A (zh) 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107604429A (zh) 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法

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JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2005206391A (ja) * 2004-01-20 2005-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

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KR100743821B1 (ko) * 2003-02-25 2007-07-30 가부시키가이샤 섬코 실리콘 단결정 육성 방법, 실리콘 웨이퍼 제조 방법 및 ｓｏｉ 기판 제조 방법

Patent Citations (3)

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JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2005206391A (ja) * 2004-01-20 2005-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (fr) * 2010-12-28 2012-07-05 Siltronic Ag Procédé de fabrication d'un monocristal de silicium, monocristal de silicium et tranche
US8961685B2 (en) 2010-12-28 2015-02-24 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
JP2012148949A (ja) * 2010-12-28 2012-08-09 Siltronic Ag シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
CN103328696A (zh) * 2011-01-24 2013-09-25 信越半导体股份有限公司 单晶硅晶片的制造方法及退火晶片
CN103328696B (zh) * 2011-01-24 2016-05-11 信越半导体股份有限公司 单晶硅晶片的制造方法及退火晶片
DE112012000306B4 (de) * 2011-01-24 2021-03-18 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers
DE112012000306T5 (de) 2011-01-24 2013-09-26 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers und eines thermisch behandelten Wafers
WO2012101957A1 (fr) * 2011-01-24 2012-08-02 信越半導体株式会社 Procédé de production de plaquette de silicium monocristallin et plaquette recuite
US8916953B2 (en) 2011-01-24 2014-12-23 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal wafer and annealed wafer
KR101904078B1 (ko) * 2011-09-08 2018-10-05 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 중 질소농도 산출방법 및 저항율 시프트량 산출방법
KR20140058587A (ko) * 2011-09-08 2014-05-14 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 중 질소농도 산출방법 및 저항율 시프트량 산출방법
WO2013035248A1 (fr) * 2011-09-08 2013-03-14 信越半導体株式会社 Procédé permettant de calculer la concentration en azote et procédé permettant de calculer l'ampleur du décalage de résistivité dans un monocristal de silicium
JP2013057585A (ja) * 2011-09-08 2013-03-28 Shin Etsu Handotai Co Ltd シリコン単結晶中窒素濃度算出方法および抵抗シフト量算出方法
EP2824222A1 (fr) * 2013-07-12 2015-01-14 GLobalWafers Japan Co., Ltd. Monocristal de silicium et son procédé de fabrication
CN105765726A (zh) * 2013-12-10 2016-07-13 株式会社爱发科 绝缘栅双极晶体管及其制造方法
JPWO2015087507A1 (ja) * 2013-12-10 2017-03-16 株式会社アルバック 絶縁ゲートバイポーラトランジスタおよびその製造方法
WO2015087507A1 (fr) * 2013-12-10 2015-06-18 株式会社アルバック Transistor bipolaire à grille isolée et son procédé de fabrication
CN110892512A (zh) * 2017-06-23 2020-03-17 胜高股份有限公司 硅晶片的热施主生成行为预测方法、硅晶片的评价方法及硅晶片的制备方法
CN110892512B (zh) * 2017-06-23 2023-06-20 胜高股份有限公司 硅晶片的热施主生成行为预测方法、硅晶片的评价方法及硅晶片的制备方法
JP2020033200A (ja) * 2018-08-27 2020-03-05 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
JP7099175B2 (ja) 2018-08-27 2022-07-12 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
JP2020202321A (ja) * 2019-06-12 2020-12-17 サンケン電気株式会社 半導体装置
JP7375340B2 (ja) 2019-06-12 2023-11-08 サンケン電気株式会社 半導体装置

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JP5321460B2 (ja) 2013-10-23
JPWO2009025337A1 (ja) 2010-11-25

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