WO2009025337A1 - Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt - Google Patents
Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt Download PDFInfo
- Publication number
- WO2009025337A1 WO2009025337A1 PCT/JP2008/064950 JP2008064950W WO2009025337A1 WO 2009025337 A1 WO2009025337 A1 WO 2009025337A1 JP 2008064950 W JP2008064950 W JP 2008064950W WO 2009025337 A1 WO2009025337 A1 WO 2009025337A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- single crystal
- silicon single
- igbt
- crystal wafer
- atoms
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This invention provides a silicon single crystal wafer for IGBT, comprising a silicon single crystal grown by a Chokralsky method which can expand pull-up speed margin and can produce wafers having no significant variation in electric resistivity. The silicon single crystal is doped with nitrogen at not less than 5 x 1012 atoms/cm3 and not more than 9 x 1014 atoms/cm3, and the concentration of a nitrogen-derived donor is brought to not more than 5 x 1012 atoms/cm3. In the whole area in the direction of the crystal grain diameter, COP defects and dislocation clusters are excluded, the interstitial oxygen concentration is not more than 4 x 1017 atoms/cm3, and the variation in electric resistivity within a wafer plane is not more than 5%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009529063A JP5321460B2 (en) | 2007-08-21 | 2008-08-21 | Manufacturing method of silicon single crystal wafer for IGBT |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007215335 | 2007-08-21 | ||
JP2007-215335 | 2007-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009025337A1 true WO2009025337A1 (en) | 2009-02-26 |
Family
ID=40378237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/064950 WO2009025337A1 (en) | 2007-08-21 | 2008-08-21 | Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5321460B2 (en) |
WO (1) | WO2009025337A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012089392A1 (en) * | 2010-12-28 | 2012-07-05 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
WO2012101957A1 (en) * | 2011-01-24 | 2012-08-02 | 信越半導体株式会社 | Silicon single-crystal wafer production method, and annealed wafer |
WO2013035248A1 (en) * | 2011-09-08 | 2013-03-14 | 信越半導体株式会社 | Method for calculating concentration of nitrogen and method for calculating shift amount of resistivity in silicon single crystal |
EP2824222A1 (en) * | 2013-07-12 | 2015-01-14 | GLobalWafers Japan Co., Ltd. | Silicon single crystal and method for manufacture thereof |
WO2015087507A1 (en) * | 2013-12-10 | 2015-06-18 | 株式会社アルバック | Insulated gate bipolar transistor and production method therefor |
JP2020033200A (en) * | 2018-08-27 | 2020-03-05 | 株式会社Sumco | Method for manufacturing silicon single crystal, and silicon wafer |
CN110892512A (en) * | 2017-06-23 | 2020-03-17 | 胜高股份有限公司 | Method for predicting thermal donor generation behavior of silicon wafer, method for evaluating silicon wafer, and method for producing silicon wafer |
JP2020202321A (en) * | 2019-06-12 | 2020-12-17 | サンケン電気株式会社 | Semiconductor device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106591939A (en) | 2015-10-15 | 2017-04-26 | 上海新昇半导体科技有限公司 | Monocrystalline silicon ingot and wafer forming method |
CN107151818A (en) | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | The growing method of monocrystalline silicon and its monocrystal silicon of preparation |
CN107151817A (en) | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | The growing method of monocrystalline silicon and its monocrystal silicon of preparation |
CN107604429A (en) | 2016-07-12 | 2018-01-19 | 上海新昇半导体科技有限公司 | The method of czochralski growth monocrystalline silicon |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005154172A (en) * | 2003-11-21 | 2005-06-16 | Shin Etsu Handotai Co Ltd | Method for manufacturing silicon single crystal, method for designing apparatus for manufacturing silicon single crystal, and apparatus for manufacturing silicon single crystal |
JP2005206391A (en) * | 2004-01-20 | 2005-08-04 | Shin Etsu Handotai Co Ltd | Method for guaranteeing resistivity of silicon single crystal substrate, method for manufacturing silicon single crystal substrate, and silicon single crystal substrate |
JP2007191350A (en) * | 2006-01-19 | 2007-08-02 | Sumco Corp | Silicon single crystal wafer for igbt and its producing method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2004083496A1 (en) * | 2003-02-25 | 2006-06-22 | 株式会社Sumco | Silicon wafer, method for producing the same, and method for growing silicon single crystal |
-
2008
- 2008-08-21 JP JP2009529063A patent/JP5321460B2/en active Active
- 2008-08-21 WO PCT/JP2008/064950 patent/WO2009025337A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005154172A (en) * | 2003-11-21 | 2005-06-16 | Shin Etsu Handotai Co Ltd | Method for manufacturing silicon single crystal, method for designing apparatus for manufacturing silicon single crystal, and apparatus for manufacturing silicon single crystal |
JP2005206391A (en) * | 2004-01-20 | 2005-08-04 | Shin Etsu Handotai Co Ltd | Method for guaranteeing resistivity of silicon single crystal substrate, method for manufacturing silicon single crystal substrate, and silicon single crystal substrate |
JP2007191350A (en) * | 2006-01-19 | 2007-08-02 | Sumco Corp | Silicon single crystal wafer for igbt and its producing method |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012089392A1 (en) * | 2010-12-28 | 2012-07-05 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
US8961685B2 (en) | 2010-12-28 | 2015-02-24 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
JP2012148949A (en) * | 2010-12-28 | 2012-08-09 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
CN103328696A (en) * | 2011-01-24 | 2013-09-25 | 信越半导体股份有限公司 | Silicon single-crystal wafer production method, and annealed wafer |
CN103328696B (en) * | 2011-01-24 | 2016-05-11 | 信越半导体股份有限公司 | The manufacture method of silicon single crystal wafer and annealed wafer |
DE112012000306B4 (en) * | 2011-01-24 | 2021-03-18 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing a silicon single crystal wafer |
DE112012000306T5 (en) | 2011-01-24 | 2013-09-26 | Shin-Etsu Handotai Co., Ltd. | A method of manufacturing a silicon single crystal wafer and a thermally treated wafer |
WO2012101957A1 (en) * | 2011-01-24 | 2012-08-02 | 信越半導体株式会社 | Silicon single-crystal wafer production method, and annealed wafer |
US8916953B2 (en) | 2011-01-24 | 2014-12-23 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon single crystal wafer and annealed wafer |
KR101904078B1 (en) * | 2011-09-08 | 2018-10-05 | 신에쯔 한도타이 가부시키가이샤 | Method for calculating concentration of nitrogen and method for calculating shift amount of resistivity in silicon single crystal |
KR20140058587A (en) * | 2011-09-08 | 2014-05-14 | 신에쯔 한도타이 가부시키가이샤 | Method for calculating concentration of nitrogen and method for calculating shift amount of resistivity in silicon single crystal |
WO2013035248A1 (en) * | 2011-09-08 | 2013-03-14 | 信越半導体株式会社 | Method for calculating concentration of nitrogen and method for calculating shift amount of resistivity in silicon single crystal |
JP2013057585A (en) * | 2011-09-08 | 2013-03-28 | Shin Etsu Handotai Co Ltd | Method for calculating nitrogen concentration in silicon single crystal and method for calculating resistance shift amount |
EP2824222A1 (en) * | 2013-07-12 | 2015-01-14 | GLobalWafers Japan Co., Ltd. | Silicon single crystal and method for manufacture thereof |
CN105765726A (en) * | 2013-12-10 | 2016-07-13 | 株式会社爱发科 | Insulated gate bipolar transistor and production method therefor |
JPWO2015087507A1 (en) * | 2013-12-10 | 2017-03-16 | 株式会社アルバック | Insulated gate bipolar transistor and manufacturing method thereof |
WO2015087507A1 (en) * | 2013-12-10 | 2015-06-18 | 株式会社アルバック | Insulated gate bipolar transistor and production method therefor |
CN110892512A (en) * | 2017-06-23 | 2020-03-17 | 胜高股份有限公司 | Method for predicting thermal donor generation behavior of silicon wafer, method for evaluating silicon wafer, and method for producing silicon wafer |
CN110892512B (en) * | 2017-06-23 | 2023-06-20 | 胜高股份有限公司 | Method for predicting thermal donor generating behavior of silicon wafer, method for evaluating silicon wafer, and method for producing silicon wafer |
JP2020033200A (en) * | 2018-08-27 | 2020-03-05 | 株式会社Sumco | Method for manufacturing silicon single crystal, and silicon wafer |
JP7099175B2 (en) | 2018-08-27 | 2022-07-12 | 株式会社Sumco | Silicon single crystal manufacturing method and silicon wafer |
JP2020202321A (en) * | 2019-06-12 | 2020-12-17 | サンケン電気株式会社 | Semiconductor device |
JP7375340B2 (en) | 2019-06-12 | 2023-11-08 | サンケン電気株式会社 | semiconductor equipment |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009025337A1 (en) | 2010-11-25 |
JP5321460B2 (en) | 2013-10-23 |
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