JP5321460B2 - Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法 - Google Patents

Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法 Download PDF

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JP5321460B2
JP5321460B2 JP2009529063A JP2009529063A JP5321460B2 JP 5321460 B2 JP5321460 B2 JP 5321460B2 JP 2009529063 A JP2009529063 A JP 2009529063A JP 2009529063 A JP2009529063 A JP 2009529063A JP 5321460 B2 JP5321460 B2 JP 5321460B2
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single crystal
silicon single
atoms
wafer
less
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JPWO2009025337A1 (ja
Inventor
繁 梅野
敏昭 小野
学 西元
正隆 宝来
祥泰 古賀
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2009529063A 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法 Active JP5321460B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529063A JP5321460B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007215335 2007-08-21
JP2007215335 2007-08-21
PCT/JP2008/064950 WO2009025337A1 (fr) 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt, procédé de fabrication d'une tranche de monocristal de silicium pour igbt, et procédé pour assurer la résistivité électrique d'une tranche de monocristal de silicium pour igbt
JP2009529063A JP5321460B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Publications (2)

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JPWO2009025337A1 JPWO2009025337A1 (ja) 2010-11-25
JP5321460B2 true JP5321460B2 (ja) 2013-10-23

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JP (1) JP5321460B2 (fr)
WO (1) WO2009025337A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9834861B2 (en) 2016-03-03 2017-12-05 Zing Semiconductor Corporation Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
TWI628318B (zh) 2015-10-15 2018-07-01 上海新昇半導體科技有限公司 單晶矽晶錠及晶圓的形成方法
TWI628317B (zh) 2016-07-12 2018-07-01 上海新昇半導體科技有限公司 柴氏拉晶法生長單晶矽的方法
US10100431B2 (en) 2016-03-03 2018-10-16 Zing Semiconductor Corporation Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
DE112012000306B4 (de) 2011-01-24 2021-03-18 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194146B2 (ja) 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
JP5678846B2 (ja) * 2011-09-08 2015-03-04 信越半導体株式会社 シリコン単結晶中窒素濃度算出方法および抵抗シフト量算出方法
JP5921498B2 (ja) * 2013-07-12 2016-05-24 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
KR20160064194A (ko) * 2013-12-10 2016-06-07 가부시키가이샤 아루박 절연 게이트 바이폴러 트랜지스터 및 그 제조 방법
JP6669133B2 (ja) * 2017-06-23 2020-03-18 株式会社Sumco シリコンウェーハのサーマルドナー生成挙動予測方法、シリコンウェーハの評価方法およびシリコンウェーハの製造方法
JP7099175B2 (ja) * 2018-08-27 2022-07-12 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
JP7375340B2 (ja) * 2019-06-12 2023-11-08 サンケン電気株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004083496A1 (fr) * 2003-02-25 2004-09-30 Sumitomo Mitsubishi Silicon Corporation Plaquette de silicium, procede pour produire cette plaquette et procede de croissance de monocristal de silicium
JP2005206391A (ja) * 2004-01-20 2005-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4461781B2 (ja) * 2003-11-21 2010-05-12 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004083496A1 (fr) * 2003-02-25 2004-09-30 Sumitomo Mitsubishi Silicon Corporation Plaquette de silicium, procede pour produire cette plaquette et procede de croissance de monocristal de silicium
JP2005206391A (ja) * 2004-01-20 2005-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012000306B4 (de) 2011-01-24 2021-03-18 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers
TWI628318B (zh) 2015-10-15 2018-07-01 上海新昇半導體科技有限公司 單晶矽晶錠及晶圓的形成方法
US9834861B2 (en) 2016-03-03 2017-12-05 Zing Semiconductor Corporation Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
US10100431B2 (en) 2016-03-03 2018-10-16 Zing Semiconductor Corporation Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
TWI654343B (zh) 2016-03-03 2019-03-21 上海新昇半導體科技有限公司 單晶矽之成長方法及其製備之單晶矽錠（一）
TWI628317B (zh) 2016-07-12 2018-07-01 上海新昇半導體科技有限公司 柴氏拉晶法生長單晶矽的方法

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WO2009025337A1 (fr) 2009-02-26

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