TWI654343B - 單晶矽之成長方法及其製備之單晶矽錠(一) - Google Patents
單晶矽之成長方法及其製備之單晶矽錠(一)Info
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Abstract
本發明係提供一種單晶矽之成長方法,係以柴氏拉晶法,將置於坩堝內之矽原料熔化而形成熔體,並提拉該熔體而使單晶矽成長之方法,其特徵在於,於形成熔體時通入包括氬氣之氣體;以及於提拉步驟中施加磁場。本發明亦提供一種以該單晶矽製備晶圓之方法。
Description
本發明係關於矽晶體之成長方法,尤其是關於單晶矽之成長方法。
在柴氏拉晶法(Czochralski method)(以下有時稱直拉法)之單晶矽生長過程中,由於石英坩堝的熔解,會使得部分氧進入單晶矽中,這些氧主要存在於矽晶格的間隙位置。當間隙氧的濃度超過氧在矽中的溶解度時即發生沈澱,從而形成單晶矽中常見的氧沈澱缺陷,進而對積體電路裝置造成損害。
內質吸除(intrinsic gettering)技術,即,藉由一定程序於矽片內形成高密度氧沈澱,而可在該矽片表面形成一定深度之無缺陷之潔淨區,該潔淨區則可應用於製造裝置。然而,隨著超大型積體電路(ULSI)之發展,特徵尺寸越來越小,必須降低單晶矽中的氧濃度以避免於裝置之有源區中形成缺陷。另外,由於目前積體電路製程之熱預算顯著降低,因此無法充分符合於矽片體內形成氧沈澱之條件,從而影響內質吸除之效果。
可藉由在直拉單晶矽中摻氮以解決上述問題。氮能夠促進直拉單晶矽中之氧沈澱,進而增強內質吸除效果。摻氮亦可提高矽片機械強
度,抑制空洞型缺陷。以紅外光散射斷層掃描法(IR-LST)及掃描紅外顯微法(SIRM)研究氧沈澱分佈情況,研究結果表示,在摻氮濃度合適的300mm摻氮直拉矽片經過一步高溫退火後,可形成高密度的氧沈澱,並於矽片近表面處形成一定寬度的潔淨區;此外,隨著氮濃度的增加,矽片中的氧沈澱徑向分佈更為均勻。
業界一般係以固相摻氮,例如採用氮化矽(Si3N4)粉末,進行單晶矽摻氮,此法可較精確地控制摻氮濃度,但高純度氮化矽(Si3N4)粉末難以獲得,且常因熔解困難而殘留Si3N4顆粒,而難以達成單晶矽的無位錯生長。業界亦採用氣相摻氮,係於晶種熔接後導入高純度氮氣或氮/氬混合氣體,藉由氮氣導入時間以控制矽晶體摻氮濃度。氣相摻氮係藉由氮氣與矽熔體反應而達成摻氮,純度較高,且反應形成之氮化矽較不易顆粒化,然而,由於完全依靠熱對流進行反應,製程不易控制且摻氮濃度較不均勻。
綜上述,對於單晶矽之製造方法仍有其需求。
本發明係提供一種單晶矽之成長方法,係以柴氏拉晶法進行,係將置於坩堝內之矽原料熔化而形成熔體,並提拉該熔體而使單晶矽成長之方法;其特徵在於:於形成熔體時通入包括氬氣之氣體;以及,於提拉步驟中施加磁場。
本發明並提供一種製備晶圓之方法,包括以本發明方法所製得之單晶矽錠為原料製備該晶圓;其特徵在於,該晶圓包含濃度為1×1013至1×1016位方公分之氮原子。
S100‧‧‧將矽原料置於石英坩堝中,以預定溫度熔化,其中該矽原料包括表面生長氮化矽之矽片及多晶矽碎塊
S200‧‧‧施加磁場
S300‧‧‧引晶步驟:採用晶種以預定拉晶速率向上拉晶,至細晶達到預定長度
S400‧‧‧放肩步驟:降低拉晶速率,維持一線性降溫速率,
使該細晶生長成預定直徑之單晶矽錠
S500‧‧‧轉肩及等徑步驟:待該單晶矽錠直徑達預定後,立即提高拉晶速率並及時降溫,同時停止該線性降溫,使該單晶矽錠之直徑維持穩定,並繼續成長
第1圖係表示本發明之單晶矽成長方法之流程。
本發明之單晶矽之成長方法係以柴氏拉晶法(又稱直拉法)為基礎,以固相摻氮配合磁場直拉單晶法(magnetic field-Czochralski method,MCZ)進行矽單晶之製備。簡言之,柴氏拉晶法為將置於坩堝內之矽原料熔化而形成熔體,並提拉該熔體而使單晶矽成長之方法。本發明之特徵在於:於形成熔體時通入包括氬氣之氣體;以及,於提拉步驟中施加磁場。
於本發明中,該矽原料包括多晶矽碎塊、及表面生長氮化矽之矽片。於實施例中,該氮化矽可以採用化學氣相沈積法(chemical vapor deposition)或電漿化學氣相沈積法(plasma chemical vapor deposition)生長,且該氮化矽之厚度為20-5000nm。
於本發明中,該磁場之強度為1000至5000高斯(Gauss)。
於實施例中,該磁場為超導體傾斜磁場。具體而言,該磁場之磁力線方向與該熔體液面呈一夾角,且角度為0至45度、或45至90度,可依實際需求調整該夾角之角度。於較佳實施例中,該磁場之磁力線方向與該熔體液面呈0至10度夾角、或80至90度夾角。
本發明之單晶矽成長方法之詳細步驟包括:將表面生長氮化矽之矽片及多晶矽碎塊共同置於石英坩堝中,以預定溫度熔化;施加磁場;進行引晶步驟:採用晶種以預定拉晶速率向上拉晶,至細晶長度達到預定長度時,降低拉晶速率進入放肩步驟;放肩步驟:降低拉晶速率,維持一線性降溫速率,使該細晶生長成預定直徑之單晶矽錠後,進入轉肩等徑步
驟;以及轉肩及等徑步驟:待該單晶矽錠直徑達預定後,立即提高拉晶速率並及時降溫,同時停止該線性降溫,控制坩堝上升速率,並根據該單晶矽錠之直徑變化率之速度,緩慢調節拉晶速率,使該單晶矽錠之直徑維持穩定,並繼續成長;待該單晶矽錠直徑相對穩定後,以自動等徑控制程式進行監控。
於實施例中,該單晶矽錠之直徑係由該拉晶速率和該預定溫度所控制。
於實施例中,該矽原料為表現生長有氮化矽薄膜之矽片與多晶矽碎塊,該等矽原料係於超過氮化矽熔點溫度(即,大於1900℃)下充分混合及熔解。隨後降低該熔體溫度,進行晶種熔接,此時該熔體表面中心區域的溫度即為矽熔點溫度,接著可進行固相摻氮拉晶生長。藉此可較精確地控制矽單晶之摻氮濃度以及達成良好之摻氮均勻性。
本發明亦提供一種製備晶圓之方法,包括以如前述方法所製得之單晶矽錠為原料製備該晶圓;其特徵在於,該晶圓包含濃度為1×1013至1×1016/立方公分(cubic centimeter)之氮原子。
於實施例中,係將該單晶矽錠進行切薄、表面磨削、研磨、邊緣處理、洗滌等步驟,而形成該晶圓。
實施例
以下將結合示意圖對本發明進行更詳細的描述,其中表示了本發明的較佳實施例,應理解具本領域通常知識者可以對此處描述之本發明進行修改,而仍然實現本發明的有利效果。因此,下列描述應該被理解為對於本領域技術人員的廣泛認知,而並非作為對本發明的限制。
為了清楚,不描述實際實施例的全部特徵。在下列描述中,不詳細描述眾所周知的功能和結構,因為它們會使本發明由於不必要的細節而混亂。應當認為在任何實際實施例的開發中,必須做出大量實施細節以實現開發者的特定目標,例如按照有關系統或有關商業的限制,由一個實施例改變為另一個實施例。另外,應當認為這種開發工作可能是複雜和耗費時間的,但是對於具本領域通常知識者來說僅僅是常規工作。
在下列段落中參照圖式以舉例方式更具體地描述本發明。根據下面的說明和申請專利範圍,本發明的優點和特徵將更清楚。需說明的是,圖式均採用非常簡化的形式且均使用非精準的比例,僅用以方便、明晰地輔助說明本發明實施例的目的。
本發明係採用固相摻氮加磁場直拉單晶法(MCZ)進行矽單晶摻氮。其程序步驟大致包括:熔化、引晶、拉晶、放肩、轉肩、等徑。參照第1圖,係說明本發明之單晶矽生長方法之一實施例,包括:S100:將矽原料置於石英坩堝中,以預定溫度熔化,其中該矽原料包括表面生長氮化矽之矽片及多晶矽碎塊S200:施加磁場;S300:引晶步驟:採用晶種以預定拉晶速率向上拉晶,至細晶達到預定長度;S400:放肩步驟:降低拉晶速率,維持一線性降溫速率,使該細晶生長成預定直徑之單晶矽錠;以及S500:轉肩及等徑步驟:待該單晶矽錠直徑達預定後,立即提高拉晶速率並及時降溫,同時停止該線性降溫,使該單晶矽錠之直徑維持穩定,並繼
續成長。
本發明之固相摻氮係以表面生長有氮化矽薄膜的矽片作為矽原料,而製備電子級的氮化矽薄膜,可於矽基板上進行氣相沈積獲得,例如:在相對高溫下進行化學氣相沉積(CVD),或,在溫度相對較低之低壓條件下進行電漿輔助化學氣相沉積(PECVD)。其反應式如下:3 SiH4(g)+4 NH3(g) → Si3N4(s)+12 H2(g)
3 SiCl4(g)+4 NH3(g) → Si3N4(s)+12 HCl(g)
3 SiCl2H2(g)+4 NH3(g) → Si3N4(s)+6 HCl(g)+6 H2(g)
其中,g表示氣態,s表示固態。
藉由CVD或PECVD,可於矽基板上形成厚度為20-5000nm之氮化矽層。
將上述具有氮化矽薄膜的矽片與多晶矽碎塊置於坩堝中,導入氬氣,並於1900-2000℃(即高於氮化矽熔點之溫度)下進行充分混合熔合,以形成熔體。隨後將熔體溫度降低,使矽熔體表面中心區域的溫度為約1400℃(即矽熔點溫度)。
對坩堝及其內之熔體施加磁場,較佳係施加超導體傾斜磁場。該磁場之磁力線方向與該熔體液面呈0至45度夾角、或45至90度夾角;其中,以0至10度夾角、或80至90度夾角為最佳。該磁場強度為1000至5000高斯(Gauss)。
進行晶種熔接,並以預定拉晶速率向上拉晶,待細晶長度達到預定長度時,降低拉晶速率進入放肩步驟;在放肩步驟中降低拉速,維持一個線性降溫速率,形成預定直徑的單晶矽錠後,進入轉肩等徑步驟;
待單晶矽錠直徑生長至預定要求後,迅速向上提升拉晶速率,及時降溫,同時停止線性降溫,給予坩堝上升速率,根據單晶矽錠直徑變化率速度,緩慢調節拉速,待單晶矽錠直徑相對穩定後,以自動等徑控制程式監控後續程序。
以本發明之方法,能夠較精確地控制單晶矽棒中的摻氮濃度,並達成良好的摻氮均勻性。依據本方法所產生之單晶矽棒或矽晶片中,所含氮原子濃度係於1×1013至1×1016/立方公分之範圍內。
對前述所得之氮摻雜單晶矽片進行高溫退火(RTA)步驟,可消除該矽片表面層深度為約0.5微米(μm)範圍內之晶體原生顆粒(crystal originated particle,COP)缺陷。可將該表面層之COP密度減少至約50%或更少。且所得矽片表面也沒有容積微缺陷(bulk micro defect,BMD)。
上述特定實施例之內容係為了詳細說明本發明,然而,該等實施例係僅用於說明,並非意欲限制本發明。熟習本領域之技藝者可理解,在不悖離後附申請專利範圍所界定之範疇下針對本發明所進行之各種變化或修改係落入本發明之一部分。
Claims (7)
- 一種單晶矽之成長方法,係以柴氏拉晶法,將置於坩堝內之矽原料熔化而形成熔體,並提拉該熔體而使單晶矽成長之方法,其特徵在於:該矽原料包括多晶矽碎塊及表面生長氮化矽之矽片,於1900-2000℃的溫度下形成熔體,形成熔體時通入包括氬氣之氣體;降低熔體溫度,使該熔體表面中心區域的溫度為約1400℃;以及於提拉步驟中施加磁場,其中,該磁場為超導體傾斜磁場,及該磁場之磁力線方向與該熔體液面呈0至45度夾角、或45至90度夾角。
- 如申請專利範圍第1項之方法,其特徵在於,以低壓化學氣相沈積法或電漿化學氣相沈積法生長氮化矽。
- 如申請專利範圍第2項之方法,其中,該氮化矽之厚度為20-5000nm。
- 如申請專利範圍第1項之方法,其中包括下列步驟:將矽原料置於石英坩堝中,以預定溫度熔化,其中該矽原料包括表面生長氮化矽之矽片及多晶矽碎塊;施加磁場;引晶步驟:採用晶種以預定拉晶速率向上拉晶,至細晶達到預定長度;放肩步驟:降低拉晶速率,維持一線性降溫速率,使該細晶生長成預定直徑之單晶矽錠;以及 轉肩及等徑步驟:待該單晶矽錠直徑達預定後,立即提高拉晶速率並及時降溫,同時停止該線性降溫,使該單晶矽錠之直徑維持穩定,並繼續成長。
- 如申請專利範圍第1項或第4項之方法,其中,該磁場之強度為1000至5000高斯(Gauss)。
- 一種製備晶圓之方法,包括以如申請專利範圍第1至5項任一項之方法所製得之單晶矽錠為原料製備該晶圓;其特徵在於,該晶圓包含濃度為1×1013至1×1016/立方公分之氮原子。
- 如申請專利範圍第6項之方法,其中,係將該單晶矽錠進行切薄、表面磨削、研磨、邊緣處理及洗滌,而形成該晶圓。
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