WO2009025340A1 - Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt - Google Patents

Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt Download PDF

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Publication number
WO2009025340A1
WO2009025340A1 PCT/JP2008/064953 JP2008064953W WO2009025340A1 WO 2009025340 A1 WO2009025340 A1 WO 2009025340A1 JP 2008064953 W JP2008064953 W JP 2008064953W WO 2009025340 A1 WO2009025340 A1 WO 2009025340A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
crystal wafer
less
Prior art date
Application number
PCT/JP2008/064953
Other languages
English (en)
Japanese (ja)
Inventor
Koji Kato
Hiroshi Hayakawa
Yutaka Saita
Tsuyoshi Nakamura
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to JP2009529066A priority Critical patent/JP5359874B2/ja
Publication of WO2009025340A1 publication Critical patent/WO2009025340A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'une tranche de monocristal de silicium pour IGBT, suivant lequel une tranche, qui présente une faible fluctuation de résistivité et une précipitation d'oxygène extrêmement faible générée même après un procédé de fabrication d'IGBT, est obtenue par croissance d'un monocristal de silicium par la méthode de Czochralski. Un monocristal ayant une concentration en oxygène interstitiel de 4x1017 atomes/cm3 ou moins est poussé à une intensité de champ magnétique de 3.000 Gauss ou plus, une vitesse de rotation de creuset de quartz de 0,2 tpm ou moins, une vitesse de rotation de cristal de 5 tpm ou moins, et à une vitesse de traction de monocristal de silicium qui permet à un monocristal de silicium n'ayant pas de défauts de croissance d'être tiré.
PCT/JP2008/064953 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt WO2009025340A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529066A JP5359874B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-215337 2007-08-21
JP2007215337 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025340A1 true WO2009025340A1 (fr) 2009-02-26

Family

ID=40378240

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064953 WO2009025340A1 (fr) 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt

Country Status (2)

Country Link
JP (1) JP5359874B2 (fr)
WO (1) WO2009025340A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016099A (ja) * 2008-07-02 2010-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ及びシリコン単結晶ウェーハの製造方法
JP2010202414A (ja) * 2009-02-27 2010-09-16 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
JP2010208877A (ja) * 2009-03-09 2010-09-24 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
JP2010265143A (ja) * 2009-05-15 2010-11-25 Sumco Corp シリコン単結晶の製造方法及びシリコンウェーハの製造方法
JP2014035305A (ja) * 2012-08-10 2014-02-24 Shin Etsu Handotai Co Ltd シリコン単結晶中の窒素濃度評価方法
WO2014190165A3 (fr) * 2013-05-24 2015-03-26 Sunedison Semiconductor Limited Procédés d'obtention de lingots de silicium à faible teneur en oxygène
JP2016117603A (ja) * 2014-12-19 2016-06-30 信越半導体株式会社 シリコン単結晶の製造方法
KR101680213B1 (ko) 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
JP2020033200A (ja) * 2018-08-27 2020-03-05 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
CN111615569A (zh) * 2017-11-29 2020-09-01 胜高股份有限公司 单晶硅及其制造方法以及硅晶片
DE112022002697T5 (de) 2021-07-29 2024-03-14 Shin-Etsu Handotai Co., Ltd. Verfahren zum herstellen eines silizium-einkristalls

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI761454B (zh) * 2017-03-31 2022-04-21 環球晶圓股份有限公司 單晶矽的製造方法
WO2023208156A1 (fr) * 2022-04-29 2023-11-02 Tcl中环新能源科技股份有限公司 Procédé de réduction de la teneur en oxygène de silicium monocristallin, et barreau cristallin

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0544440B2 (fr) * 1984-12-24 1993-07-06 Tokyo Shibaura Electric Co
JP2005145724A (ja) * 2003-11-11 2005-06-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0544440B2 (fr) * 1984-12-24 1993-07-06 Tokyo Shibaura Electric Co
JP2005145724A (ja) * 2003-11-11 2005-06-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016099A (ja) * 2008-07-02 2010-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ及びシリコン単結晶ウェーハの製造方法
JP2010202414A (ja) * 2009-02-27 2010-09-16 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
JP2010208877A (ja) * 2009-03-09 2010-09-24 Sumco Corp シリコン単結晶の育成方法及びシリコンウェーハの製造方法
JP2010265143A (ja) * 2009-05-15 2010-11-25 Sumco Corp シリコン単結晶の製造方法及びシリコンウェーハの製造方法
JP2014035305A (ja) * 2012-08-10 2014-02-24 Shin Etsu Handotai Co Ltd シリコン単結晶中の窒素濃度評価方法
US9951440B2 (en) 2013-05-24 2018-04-24 Sunedison Semiconductor Limited Methods for producing low oxygen silicon ingots
WO2014190165A3 (fr) * 2013-05-24 2015-03-26 Sunedison Semiconductor Limited Procédés d'obtention de lingots de silicium à faible teneur en oxygène
US10513796B2 (en) 2013-05-24 2019-12-24 Globalwafers Co., Ltd. Methods for producing low oxygen silicon ingots
JP2016117603A (ja) * 2014-12-19 2016-06-30 信越半導体株式会社 シリコン単結晶の製造方法
KR101680213B1 (ko) 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
CN111615569A (zh) * 2017-11-29 2020-09-01 胜高股份有限公司 单晶硅及其制造方法以及硅晶片
JP2020033200A (ja) * 2018-08-27 2020-03-05 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
CN110863240A (zh) * 2018-08-27 2020-03-06 胜高股份有限公司 单晶硅的制造方法和硅晶片
JP7099175B2 (ja) 2018-08-27 2022-07-12 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
DE112022002697T5 (de) 2021-07-29 2024-03-14 Shin-Etsu Handotai Co., Ltd. Verfahren zum herstellen eines silizium-einkristalls
KR20240038957A (ko) 2021-07-29 2024-03-26 신에쯔 한도타이 가부시키가이샤 실리콘 단결정의 제조방법

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Publication number Publication date
JPWO2009025340A1 (ja) 2010-11-25
JP5359874B2 (ja) 2013-12-04

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