WO2009022651A1 - 半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器 - Google Patents

半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器 Download PDF

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Publication number
WO2009022651A1
WO2009022651A1 PCT/JP2008/064315 JP2008064315W WO2009022651A1 WO 2009022651 A1 WO2009022651 A1 WO 2009022651A1 JP 2008064315 W JP2008064315 W JP 2008064315W WO 2009022651 A1 WO2009022651 A1 WO 2009022651A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
drive
laser drive
temperature
current value
Prior art date
Application number
PCT/JP2008/064315
Other languages
English (en)
French (fr)
Inventor
Kentaro Hamana
Akira Enami
Yukari Terakawa
Keisuke Uno
Hayami Hosokawa
Original Assignee
Omron Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corporation filed Critical Omron Corporation
Priority to EP08827565.6A priority Critical patent/EP2180564A4/en
Priority to CN200880102615.8A priority patent/CN101779346B/zh
Priority to KR1020107002095A priority patent/KR101184836B1/ko
Priority to US12/672,763 priority patent/US8457499B2/en
Publication of WO2009022651A1 publication Critical patent/WO2009022651A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　駆動温度に基づいて、当該駆動温度に対するバイアス電流値の温度特性が、０以外の傾きを有する線形関数となるように、バイアス電流値を設定するバイアス電流設定部（２３２）と、駆動温度に基づいて、当該駆動温度に対する駆動電流値の温度特性が、０以外の傾きを有する関数となるように、駆動電流値を設定する駆動電流設定部（２３３）と、を備える。また、バイアス電流の温度特性と駆動電流の温度特性とは、互いに異なる関数となる。これにより、半導体レーザの低コスト化、省スペース化、低電力化を可能とし、かつ半導体レーザの駆動においては、全駆動温度範囲に渡って、受信側で良好な伝送特性および光出力が得られる、半導体レーザ駆動装置を提供することができる。
PCT/JP2008/064315 2007-08-13 2008-08-08 半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器 WO2009022651A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08827565.6A EP2180564A4 (en) 2007-08-13 2008-08-08 SEMICONDUCTOR LASER EXCITATION APPARATUS, SEMICONDUCTOR LASER EXCITATION METHOD, OPTICAL TRANSMITTER, OPTICAL WIRING MODULE, AND ELECTRONIC DEVICE
CN200880102615.8A CN101779346B (zh) 2007-08-13 2008-08-08 半导体激光器驱动装置、半导体激光器驱动方法、光发送装置、光布线模块、以及电子设备
KR1020107002095A KR101184836B1 (ko) 2007-08-13 2008-08-08 반도체 레이저 구동 장치, 반도체 레이저 구동 방법, 광 송신 장치, 광 배선 모듈, 및 전자 기기
US12/672,763 US8457499B2 (en) 2007-08-13 2008-08-08 Semiconductor laser drive device, semiconductor laser drive method, light transmission device, optical wiring module, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007210807A JP4341708B2 (ja) 2007-08-13 2007-08-13 半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器
JP2007-210807 2007-08-13

Publications (1)

Publication Number Publication Date
WO2009022651A1 true WO2009022651A1 (ja) 2009-02-19

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PCT/JP2008/064315 WO2009022651A1 (ja) 2007-08-13 2008-08-08 半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器

Country Status (6)

Country Link
US (1) US8457499B2 (ja)
EP (1) EP2180564A4 (ja)
JP (1) JP4341708B2 (ja)
KR (1) KR101184836B1 (ja)
CN (1) CN101779346B (ja)
WO (1) WO2009022651A1 (ja)

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CN106301668A (zh) * 2016-08-15 2017-01-04 桂林创研科技有限公司 一种wdm_pon系统
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CN108390724B (zh) * 2018-02-01 2021-06-04 青岛海信宽带多媒体技术有限公司 光模块的发射光功率调节方法、装置及光模块
US10910037B2 (en) 2018-10-04 2021-02-02 Micron Technology, Inc. Apparatuses and methods for input receiver circuits and receiver masks for same
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CN112164968B (zh) * 2020-09-18 2021-08-17 苏州创鑫激光科技有限公司 一种激光器电流选取方法、系统、装置及可读存储介质
CN115941055B (zh) * 2023-03-13 2023-06-02 杭州瑞利测控技术有限公司 油井信息传输的执行方法及相关设备
CN117712820B (zh) * 2024-02-05 2024-04-19 成都光创联科技有限公司 激光器线性电源的驱动电路及激光器

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Also Published As

Publication number Publication date
JP4341708B2 (ja) 2009-10-07
EP2180564A4 (en) 2015-06-24
KR20100024517A (ko) 2010-03-05
KR101184836B1 (ko) 2012-09-20
CN101779346B (zh) 2012-12-26
US20120134681A1 (en) 2012-05-31
CN101779346A (zh) 2010-07-14
EP2180564A1 (en) 2010-04-28
US8457499B2 (en) 2013-06-04
JP2009049032A (ja) 2009-03-05

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