WO2009021364A1 - Procédé de contrôle du grattage de la surface polie d'une tranche de silicium - Google Patents

Procédé de contrôle du grattage de la surface polie d'une tranche de silicium Download PDF

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Publication number
WO2009021364A1
WO2009021364A1 PCT/CN2007/002754 CN2007002754W WO2009021364A1 WO 2009021364 A1 WO2009021364 A1 WO 2009021364A1 CN 2007002754 W CN2007002754 W CN 2007002754W WO 2009021364 A1 WO2009021364 A1 WO 2009021364A1
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WO
WIPO (PCT)
Prior art keywords
polishing
silicon wafer
scratching
controlling
pressure
Prior art date
Application number
PCT/CN2007/002754
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English (en)
Chinese (zh)
Inventor
Jihe Zhong
Original Assignee
Jiangsu Haixun Industry & Commerce Group Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Haixun Industry & Commerce Group Co., Ltd. filed Critical Jiangsu Haixun Industry & Commerce Group Co., Ltd.
Publication of WO2009021364A1 publication Critical patent/WO2009021364A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the invention relates to a silicon wafer processing method, in particular to a method for controlling the scratching of a silicon wafer polishing surface for processing and polishing a single crystal silicon wafer for an integrated circuit substrate and reducing the degree of surface scratching.
  • Silicon is a hard and brittle material with a diamond crystal structure and covalently bonded between atoms. It is a good semiconductor material.
  • silicon wafers silicon wafers.
  • the surface of the silicon wafer must be straight, especially as the integration level of the integrated circuits continues to increase, and the requirements for the flatness and roughness of the silicon wafers are proposed. Strict requirements.
  • Polishing is the second mechanical processing of the surface after the silicon wafer is sliced, which is also a necessary basic process in the wafer processing technology.
  • the purpose of polishing is to reduce the damage of the damage layer and surface of the surface of the silicon wafer during the grinding process, to achieve uniformity of the surface damage layer and to control the length of the scratch surface, so that the surface corrosion rate is uniform during chemical corrosion. Consistent.
  • Wafer polishing includes light throwing, medium throwing, heavy throwing and water polishing. Generally, when polishing, the silicon wafer to be polished is first attached to the polishing machine polishing disc, and then the polishing disc is fixed on the polishing machine polishing head, and then adjusted. And control the appropriate pressure of the polishing machine, the appropriate rotation speed of the upper and lower polishing discs, and a reasonable flow of polishing liquid between the polishing disc and the silicon wafer, and then polish the silicon wafer.
  • the surface polish of silicon wafers is one of the most important factors affecting the quality and reliability of electronic components. It is important to improve the pass rate of silicon wafer polishing products and control the scratching of polished surfaces. .
  • a polishing fluid prepared by selecting a larger abrasive material in order to pursue the removal rate during the polishing process, resulting in an increase in the polishing damage layer and an increase in the number of surface scratches.
  • An aluminum oxide polishing liquid having a specific particle size distribution is disclosed in Japanese Laid-Open Patent Publication No. 2001-323254.
  • the polishing liquid uses nearly monodisperse colloidal boron carbide as an abrasive, and a large amount of scratches are formed on the surface of the 3 ⁇ 4 after polishing.
  • U.S. Patent No. 6,143,662 discloses a polishing method using a small particle and a large particle mixed slurry, which also causes a large amount of scratch on the surface of the silicon wafer after polishing.
  • Patent No. 03155318. 4 a smaller polishing scratch is achieved by controlling the abrasive particle size than the above two polishing liquids, but the removal rate of the polished silicon wafer is lowered due to the change in the abrasive particle size.
  • Patent 200510055710. 5 proposed a polishing method using spherical silica abrasive, although the effect of less polishing scratch is achieved, but this method requires higher abrasive performance, increases production cost, and is in mass production. Not easy to achieve.
  • the main purpose of the present invention is to overcome the above-mentioned shortcomings of existing products, and to provide a control method for scratching a silicon wafer polishing surface, which improves the processing conditions of the silicon wafer polishing, and can effectively reduce the scratch on the surface of the polished silicon wafer. 'At the same time, it can guarantee the high removal rate of wafer polishing, and the production cost is low, which is suitable for scale production.
  • the object of the present invention is achieved by the following technical solutions.
  • the method for controlling the scratching of the polished surface of the silicon wafer comprises: attaching the silicon wafer to the polishing machine polishing disc, and then fixing the polishing disc on the polishing machine polishing head to control the pressure of the polishing machine and the rotation speed of the upper and lower polishing discs.
  • polishing liquid between the polishing disk and the silicon wafer; wherein the polishing liquid comprises an abrasive, a penetrating agent, a lubricant, a pH adjusting agent, a surfactant, a chelating agent, and deionized water; and the pressure of the polishing machine
  • the control is below 50 kPa, the rotational speed of the upper polishing disk is controlled below 60 rp m , and the rotational speed of the lower polishing disk is controlled below 60 rpm.
  • the 5% by weight of the osmotic agent is 5% to 5%, and the osmotic agent is 3% to 5%. 5% ⁇ 1.
  • the pH of the modifier is 10% to 20%
  • the surfactant is 0.1% to 1.
  • the chelating agent is 1% to 3%
  • deionized Water is the balance; at room temperature, abrasive, penetrant, lubricant, pH adjuster, surfactant and chelating agent are sequentially added to the deionized water, and stirred uniformly to prepare a polishing liquid.
  • the foregoing method for controlling scratching of a silicon wafer polishing surface characterized in that the abrasive is silicon dioxide (SiO 2 ) having a particle diameter of 70 to 90 nm, and aluminum oxide having a particle diameter of 150 to 200 nm ( ⁇ 1 ⁇ ) ), a particle size of 100-150 nm ceria (Ce0 2), a particle size of 100 to 150 nm titanium oxide (Ti0 2) or a particle diameter of 150 to 200 nanometers boron carbide;
  • the penetrant is poly An oxyethylene ether (JFC) or a phosphate;
  • the pH adjuster is an inorganic base or an organic base; and
  • the chelating agent is one of ethylenediaminetetraacetic acid (EDTA), disodium edetate, hydroxylamine and amine Or a combination thereof;
  • the lubricant is glycerin;
  • the surfactant is a nonionic surfactant.
  • the foregoing method for controlling scratching of a polished surface of a silicon wafer characterized in that the hydroxylamine is triethanolamine, tetrahydroxyethylethylenediamine or hexahydroxypropylpropanediamine; the amine is ethylenediamine or tetramethyl Barium hydroxide.
  • the nonionic surfactant is a fatty alcohol a polyoxyethylene ether, an alkanoyl alcohol amide or a mixture of the two;
  • the fatty alcohol polyoxyethylene ether is a nonylphenol ethoxylate having a degree of polymerization of 15, and an octylphenol ethoxylate having a degree of polymerization of 20.
  • the decyl alcohol amide is a laurel Acyl monoethanolamine, dihydroxyethyltridecylamide or dodecyl alcohol amide.
  • the foregoing method for controlling scratching of a polished surface of a silicon wafer characterized in that the inorganic base is potassium hydroxide, sodium hydroxide or ammonia; the organic base is hydroxyethylenediamine, benzylamine, ethanolamine or tetramethylhydrogen. Ammonium oxide.
  • the foregoing method for controlling scratching of a silicon wafer polishing surface is characterized in that the pressure of the polishing machine is preferably 25 kPa or less, and the pressure application process is performed by a constant pressure of 0 to a desired pressure r and polishing at a stable pressure.
  • the method for controlling the scratching of the polished surface of the silicon wafer comprises: bonding the silicon wafer to the polishing machine polishing disc, and then fixing the polishing disc on the polishing machine polishing head, controlling the pressure of the polishing machine and the rotation speed of the upper and lower polishing disks, and Injecting a polishing liquid between the polishing disk and the silicon wafer; the improvement is that the polishing liquid comprises an abrasive, a penetrating agent, a lubricant, a pH adjuster, a surfactant, a chelating agent, and deionized water;
  • the pressure is controlled below 50 kPa, the rotational speed of the upper polishing disk is controlled below 60 rpm, and the rotational speed of the lower polishing disk is controlled below 60 rpm.
  • the 5% by weight of the osmotic agent is 5% to 5%, and the osmotic agent is 3% to 5%. 5% ⁇ 1.
  • a pH adjuster of 10% to 20% a surfactant of 0.1% to 1.0%, a chelating agent of 1% to 3%, deionized water
  • a chelating agent of 1% to 3% deionized water
  • the method for controlling scratching of a polished surface of a silicon wafer according to the present invention is characterized in that the abrasive is silicon dioxide (SiO 2 ) having a particle diameter of 70 to 90 nm and aluminum oxide having a particle diameter of 150 to 200 nm (A1).
  • SiO 2 silicon dioxide
  • Al oxide aluminum oxide having a particle diameter of 150 to 200 nm
  • the agent is polyoxyethylene ether (JFC) or phosphate
  • the pH adjuster is an inorganic base or an organic base
  • the chelating agent is ethylenediaminetetraacetic acid (EDTA), disodium edetate, hydroxylamine and amine One or a combination thereof
  • the lubricant is glycerin
  • the surfactant is a nonionic surfactant.
  • the nonionic surfactant is a fatty alcohol polyoxyethylene ether, a mercapto alcohol amide or a mixture of the two; the fatty alcohol polyoxyethylene ether is a nonylphenol ethoxylate having a degree of polymerization of 15, and the degree of polymerization is 20 octylphenol ethoxylates (0-20), octylphenol ethoxylates with a degree of polymerization of 25 (0-25) or octylphenol ethoxylates with a degree of polymerization of 40 (0-40)
  • the mercapto alcohol 'amide is lauroyl monoethanolamine, dihydroxyethyltridecylamide or dodecyl alcoholamide; the inorganic base is potassium hydroxide
  • the pressure of the polishing machine is preferably 25 kPa or less, and the pressure application process is carried out by a constant pressure of 0 to the desired pressure, and is thrown under a stable pressure.
  • the method for controlling the scratching of the polished surface of the silicon wafer of the present invention mainly aims at reducing the surface scratching in the polishing process of the silicon wafer by improving the processing conditions of the silicon wafer polishing. Firstly, the formulation of the polishing liquid is improved.
  • the abrasive selected in the polishing liquid is a nano-scale abrasive.
  • the abrasive Compared with the conventional abrasive, the abrasive has the characteristics of small particle size, high fineness, good particle stability and firm particles, so that after polishing The surface roughness is lower, and the surface scratching can be effectively reduced; the chelating agent is added to the polishing liquid to chelate the heavy metal ions which affect the subsequent processing of the silicon wafer, and the effect of adding the penetrating agent is to increase the polishing.
  • the penetration and flowability of the liquid in the polishing cloth makes the mass exchange effect of the polishing liquid in the polishing process more favorable; the fatty alcohol polyoxygen J: oxime ether or alkyl alcohol amide is used as the nonionic surfactant in the polishing liquid of the invention.
  • one of the two can be used alone, or a mixture of any two of them, the two surfactants can effectively reduce the scratch on the polished surface, mainly because the two are polished During the process, it acts as a wetting particle. During the polishing process, they can adsorb on the solid surface and protect the surface of the silicon wafer. Low surface tension, such that the wafer surface during polishing in resistance to cracking, formed pieces, thereby reducing the surface scratches after polishing. Secondly, the reasonable polishing machine pressure and the rotational speed of the polishing disc are designed. At this pressure and speed, the polishing machine can achieve the most efficient use efficiency, thereby reducing scratches.
  • the polishing machine used in the method for controlling the scratching of the polished surface of the silicon wafer is a commercially available product, for example, a double-sided polishing machine, and the material of the polishing disk may be spherical graphite cast iron or other, so No more details are given.
  • the method of the present invention can be applied to a light throwing, medium throwing, and heavy polishing process of a silicon wafer.
  • the invention has the advantages of using a scientifically rationally formulated polishing liquid and adjusting and controlling the polishing machine to operate under suitable pressure and speed conditions, thereby effectively reducing the scratch on the surface of the silicon wafer, providing better surface quality and faster polishing. Rate, and does not increase production costs.
  • the Lanxin 815B double-sided polishing machine is used, and the polishing disc is made of spheroidal graphite cast iron.
  • silica abrasive Prepare 1 kg of silicon wafer polishing solution. Weigh 10% of the silica abrasive by weight of the preparation slurry. The particle size of the silica is 70 nm, 12% sodium hydroxide, 0.5% lauroyl monoethanolamine, 3. 5% phosphoric acid. Ester, 1% glycerol, 2% hexahydroxypropyl propylenediamine, balance to deionized water. The above-mentioned silica abrasive, sodium hydroxide, lauroyl monoethanolamine, phosphate, glycerin and hexahydroxypropylpropanediamine were added to the deionized water in this order at room temperature, and the mixture was stirred for use.
  • the silicon wafer to be polished is pasted on the polishing disc of the polishing machine, and the polishing disc with the silicon wafer adhered is fixed on the machine throwing head, and the pressure of the polishing machine is adjusted to increase from 0 to 10 kPa, and controlled at 10 kPa. 5 ⁇ / ⁇ Adjusting the flow rate of the polishing liquid is 2. 5 l / min.
  • the surface roughness value is about 0.03 nm, and the surface roughness value is about 0.03 nm.
  • the Lanxin 815B double-sided polishing machine is used, and the polishing disc is made of spheroidal graphite cast iron.
  • the arsenic trioxide abrasive having a particle size of 200 nm, 10% tetramethylammonium hydroxide, and 0.3% polymerization degree of 25 were respectively weighed.
  • the silicon wafer to be polished is pasted on the polishing disc, and the polishing disc with the silicon wafer adhered is fixed on the polishing machine head, and the pressure of the polishing machine is uniformly increased from 0 to 10 kPa, and controlled at about 10 kPa, and controlled. 5 ⁇ / ⁇
  • the polishing liquid flow rate is also 2.5 liters / min.
  • the surface removal value is generally about 0. 5nm / m i n , and the surface roughness value is about 0.5 nm / m i n using the existing polishing process. 0. 03nra or so.
  • the present invention relates to a room temperature of 20-25'C.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention a pour objet un procédé de contrôle du grattage des surfaces polies de tranches de silicium, qui comprend les étapes consistant à coller des tranches de silicium sur les disques de polissage d'une polisseuse, puis à maintenir les disques de polissage sur les têtes de polissage de la polisseuse, à contrôler la pression, la vitesse de rotation des disques supérieurs et inférieurs de la polisseuse, et à injecter un liquide de polissage entre les disques de polissage et la tranche de silicium. L'amélioration réside en ce que : le liquide de polissage comprend un abrasif, un pénétrant, un lubrifiant, un régulateur de pH, un agent tensioactif, un agent chélatant et de l'eau déminéralisée; la pression de la polisseuse est contrôlée au-dessous de 50 kPa, la vitesse de rotation des disques de polissage supérieurs est contrôlée au-dessous de 60 tours par minute, la vitesse de rotation des disques de polissage inférieurs est contrôlée au-dessous de 60 tours par minute. Le procédé peut réduire le grattage des surfaces polies de tranches de silicium et peut garantir au polissage de la tranche de silicium un taux de dépose plus élevé. De plus, le coût est bas et convient aux demandes à échelle industrielle.
PCT/CN2007/002754 2007-08-15 2007-09-18 Procédé de contrôle du grattage de la surface polie d'une tranche de silicium WO2009021364A1 (fr)

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CNA2007100587491A CN101367189A (zh) 2007-08-15 2007-08-15 硅片抛光表面划伤的控制方法
CN200710058749.1 2007-08-15

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US9896604B2 (en) 2013-03-15 2018-02-20 Ecolab Usa Inc. Methods of polishing sapphire surfaces
CN113319652A (zh) * 2021-03-08 2021-08-31 中环领先半导体材料有限公司 一种改善单抛机抛后硅片塌边的抛光工艺
CN115477925A (zh) * 2022-09-23 2022-12-16 珠海市创智成功科技有限公司 一种应用在晶圆背面减薄的化学研磨液配方
CN115746712A (zh) * 2022-11-28 2023-03-07 北京航天赛德科技发展有限公司 一种用于硅衬底抛光的抛光组合物及其制备方法和应用
CN115785822A (zh) * 2022-12-02 2023-03-14 深圳玖创精密科技有限公司 一种抛光液及其制备方法
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US9896604B2 (en) 2013-03-15 2018-02-20 Ecolab Usa Inc. Methods of polishing sapphire surfaces
CN113319652A (zh) * 2021-03-08 2021-08-31 中环领先半导体材料有限公司 一种改善单抛机抛后硅片塌边的抛光工艺
CN115477925A (zh) * 2022-09-23 2022-12-16 珠海市创智成功科技有限公司 一种应用在晶圆背面减薄的化学研磨液配方
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