WO2008142885A1 - 半導体モジュール及びインバータ装置 - Google Patents

半導体モジュール及びインバータ装置 Download PDF

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Publication number
WO2008142885A1
WO2008142885A1 PCT/JP2008/052536 JP2008052536W WO2008142885A1 WO 2008142885 A1 WO2008142885 A1 WO 2008142885A1 JP 2008052536 W JP2008052536 W JP 2008052536W WO 2008142885 A1 WO2008142885 A1 WO 2008142885A1
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WIPO (PCT)
Prior art keywords
switching element
refrigerant
disposed
substrates
series
Prior art date
Application number
PCT/JP2008/052536
Other languages
English (en)
French (fr)
Inventor
Kazuo Aoki
Junji Tsuruoka
Seiji Yasui
Original Assignee
Aisin Aw Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Aw Co., Ltd. filed Critical Aisin Aw Co., Ltd.
Priority to CN2008800060471A priority Critical patent/CN101622708B/zh
Priority to DE112008000446T priority patent/DE112008000446B4/de
Publication of WO2008142885A1 publication Critical patent/WO2008142885A1/ja

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

　複数の基板のそれぞれのスイッチング素子とダイオード素子とが冷媒の流れ方向に直列に配置される構成に関して、全ての基板のスイッチング素子を適切に冷却することができる構成を備えた半導体モジュールを提供する。 　冷媒流路（７）内に所定方向の平行な冷媒の流れを形成する平行流形成手段（８）を備え、各基板（３）は、スイッチング素子（４）とダイオード素子（５）とが冷媒の流れ方向（Ｄ）に直列に配置されるとともに、スイッチング素子（４）と接続端子領域（６）とが冷媒の流れ方向（Ｄ）に対する直交方向（Ｃ）に位置を異ならせて配置され、一対の基板（３）が冷媒の流れ方向（Ｄ）に直列に配置されるとともに、一方の基板（３）では直交方向（Ｃ）の一方側にスイッチング素子（４）が配置され、他方の基板（３）では直交方向（Ｃ）の一方側に接続端子領域（６）が配置される。
PCT/JP2008/052536 2007-05-22 2008-02-15 半導体モジュール及びインバータ装置 WO2008142885A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800060471A CN101622708B (zh) 2007-05-22 2008-02-15 半导体模块及逆变器装置
DE112008000446T DE112008000446B4 (de) 2007-05-22 2008-02-15 Halbleitermodule und Wechselrichtervorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007135681A JP5099417B2 (ja) 2007-05-22 2007-05-22 半導体モジュール及びインバータ装置
JP2007-135681 2007-05-22

Publications (1)

Publication Number Publication Date
WO2008142885A1 true WO2008142885A1 (ja) 2008-11-27

Family

ID=40031604

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052536 WO2008142885A1 (ja) 2007-05-22 2008-02-15 半導体モジュール及びインバータ装置

Country Status (5)

Country Link
US (1) US7755898B2 (ja)
JP (1) JP5099417B2 (ja)
CN (1) CN101622708B (ja)
DE (1) DE112008000446B4 (ja)
WO (1) WO2008142885A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011086896A1 (ja) * 2010-01-15 2011-07-21 三菱電機株式会社 電力用半導体モジュール

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JP4580997B2 (ja) 2008-03-11 2010-11-17 日立オートモティブシステムズ株式会社 電力変換装置
JP4708459B2 (ja) * 2008-07-29 2011-06-22 日立オートモティブシステムズ株式会社 電力変換装置
DE102008061489A1 (de) * 2008-12-10 2010-06-17 Siemens Aktiengesellschaft Stromrichtermodul mit gekühlter Verschienung
JP5304894B2 (ja) 2009-05-29 2013-10-02 トヨタ自動車株式会社 交流電動機の制御装置および制御方法
US8064198B2 (en) * 2009-06-29 2011-11-22 Honda Motor Co., Ltd. Cooling device for semiconductor element module and magnetic part
BR112012016900A2 (ja) * 2010-01-18 2018-06-05 Mitsubishi Electric Corporation A power semiconductor module, a power converter, and a rail car
JP5627499B2 (ja) * 2010-03-30 2014-11-19 株式会社デンソー 半導体モジュールを備えた半導体装置
JP5126277B2 (ja) 2010-04-16 2013-01-23 株式会社デンソー 電動装置
JP5512377B2 (ja) * 2010-04-28 2014-06-04 本田技研工業株式会社 回路基板
US9252069B2 (en) * 2010-08-31 2016-02-02 Teledyne Scientific & Imaging, Llc High power module cooling system
JP5273487B2 (ja) * 2010-11-05 2013-08-28 本田技研工業株式会社 パワーコントロールユニット
JP5707916B2 (ja) * 2010-12-14 2015-04-30 トヨタ自動車株式会社 半導体冷却装置及びその製造方法
JP5488565B2 (ja) * 2011-03-29 2014-05-14 株式会社デンソー 電力変換装置
US8982558B2 (en) 2011-06-24 2015-03-17 General Electric Company Cooling device for a power module, and a related method thereof
EP2574157A1 (de) * 2011-09-23 2013-03-27 AEG Power Solutions B.V. Leistungselektronikbaugruppe und Anordnung umfassend wenigstens eine solche Leistungselektronikbaugruppe
US8811015B2 (en) * 2012-02-16 2014-08-19 Mission Motor Company Motor control device
CN104067502B (zh) * 2012-03-21 2016-08-24 富士电机株式会社 功率转换装置
JP5573884B2 (ja) * 2012-04-25 2014-08-20 株式会社デンソー 電力変換装置
KR101375956B1 (ko) * 2012-07-05 2014-03-18 엘에스산전 주식회사 자동차용 전장부품 박스
JP6102297B2 (ja) * 2013-02-06 2017-03-29 富士電機株式会社 半導体装置
JP6124742B2 (ja) 2013-09-05 2017-05-10 三菱電機株式会社 半導体装置
CN106030796B (zh) * 2014-02-11 2018-07-06 三菱电机株式会社 功率用半导体模块
JP2015231015A (ja) * 2014-06-06 2015-12-21 富士通株式会社 液冷ジャケットおよび電子機器
JP2016063641A (ja) * 2014-09-18 2016-04-25 株式会社デンソー 電力変換装置
US11022383B2 (en) 2016-06-16 2021-06-01 Teledyne Scientific & Imaging, Llc Interface-free thermal management system for high power devices co-fabricated with electronic circuit
JP6633481B2 (ja) 2016-09-07 2020-01-22 本田技研工業株式会社 電力変換装置の故障検知装置及び車両
CN109844941B (zh) * 2016-10-21 2022-12-13 三菱电机株式会社 半导体模块以及电力变换装置
JP6424930B2 (ja) * 2017-09-01 2018-11-21 株式会社デンソー 電力変換装置
JP7205071B2 (ja) 2018-04-02 2023-01-17 富士電機株式会社 冷却装置、半導体モジュールおよび車両
JP7187992B2 (ja) * 2018-11-06 2022-12-13 富士電機株式会社 半導体モジュールおよび車両
CN113892172A (zh) * 2019-05-30 2022-01-04 三菱电机株式会社 半导体装置
JP2023023518A (ja) * 2021-08-05 2023-02-16 日本電産株式会社 液冷ジャケット、および冷却装置
US11818871B2 (en) * 2021-09-20 2023-11-14 GM Global Technology Operations LLC Heat sink for an electronic device of a motor vehicle and method of manufacturing same
JP7111268B1 (ja) 2022-01-19 2022-08-02 富士電機株式会社 冷却器及び半導体装置

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Publication number Priority date Publication date Assignee Title
WO2011086896A1 (ja) * 2010-01-15 2011-07-21 三菱電機株式会社 電力用半導体モジュール
JP5147996B2 (ja) * 2010-01-15 2013-02-20 三菱電機株式会社 電力用半導体モジュール
JPWO2011086896A1 (ja) * 2010-01-15 2013-05-16 三菱電機株式会社 電力用半導体モジュール
KR101375502B1 (ko) * 2010-01-15 2014-03-18 미쓰비시덴키 가부시키가이샤 전력용 반도체 모듈
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Also Published As

Publication number Publication date
US20080291710A1 (en) 2008-11-27
US7755898B2 (en) 2010-07-13
CN101622708A (zh) 2010-01-06
DE112008000446T5 (de) 2009-12-17
DE112008000446B4 (de) 2013-10-31
JP5099417B2 (ja) 2012-12-19
JP2008294067A (ja) 2008-12-04
CN101622708B (zh) 2011-06-08

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