WO2008133162A1 - 表示装置及びその製造方法 - Google Patents

表示装置及びその製造方法 Download PDF

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Publication number
WO2008133162A1
WO2008133162A1 PCT/JP2008/057479 JP2008057479W WO2008133162A1 WO 2008133162 A1 WO2008133162 A1 WO 2008133162A1 JP 2008057479 W JP2008057479 W JP 2008057479W WO 2008133162 A1 WO2008133162 A1 WO 2008133162A1
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WO
WIPO (PCT)
Prior art keywords
display device
opening section
metal
film
manufacturing
Prior art date
Application number
PCT/JP2008/057479
Other languages
English (en)
French (fr)
Inventor
Masaki Yamanaka
Hiromi Katoh
Christopher Brown
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/595,322 priority Critical patent/US8106401B2/en
Priority to CN2008800035855A priority patent/CN101595514B/zh
Publication of WO2008133162A1 publication Critical patent/WO2008133162A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)

Abstract

　フォトダイオードの出力特性のばらつきが抑制された表示装置及びその製造方法を提供する。アクティブマトリクス基板（２）と、フォトダイオード（６）とを備えた表示装置を作成する。先ず、ガラス（１２）基板上に、シリコン膜（８）、シリコン膜（８）を覆う層間絶縁膜（１５）を順に形成する。次に、金属膜を形成し、それにエッチングを行って、シリコン膜（８）を横切る金属配線（１０，１１）を形成する。そして、ｐ層（９ａ）の形成予定領域と重なる部分を露出させる開口部（２４ａ）を備え、且つ、開口部（２４ａ）の一部が金属配線（１０）で形成されているマスクを用いて、ｐ型の不純物をイオン注入する。更に、ｎ層（９ｃ）の形成予定領域と重なる部分を露出させる開口部（２５ｂ）を備え、且つ、開口部（２５ａ）の一部が金属配線（１１）で形成されているマスクを用いて、ｎ型の不純物をイオン注入する。
PCT/JP2008/057479 2007-04-25 2008-04-17 表示装置及びその製造方法 WO2008133162A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/595,322 US8106401B2 (en) 2007-04-25 2008-04-17 Display device including metal lines provided above photodiode
CN2008800035855A CN101595514B (zh) 2007-04-25 2008-04-17 显示装置及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-115913 2007-04-25
JP2007115913 2007-04-25

Publications (1)

Publication Number Publication Date
WO2008133162A1 true WO2008133162A1 (ja) 2008-11-06

Family

ID=39925618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057479 WO2008133162A1 (ja) 2007-04-25 2008-04-17 表示装置及びその製造方法

Country Status (3)

Country Link
US (1) US8106401B2 (ja)
CN (1) CN101595514B (ja)
WO (1) WO2008133162A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032632A1 (ja) * 2008-09-19 2010-03-25 株式会社 東芝 光検出素子、光検出装置、及び、光検出機能付き表示装置
US20120058589A1 (en) * 2009-05-20 2012-03-08 Sharp Kabushiki Kaisha Method of producing semiconductor device
WO2012046628A1 (ja) * 2010-10-06 2012-04-12 シャープ株式会社 光センサ及び該光センサを備えた液晶パネル

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110194036A1 (en) * 2008-10-09 2011-08-11 Sharp Kabushiki Kaisha Photodiode, photodiode-equipped display device, and fabrication method therefor
WO2010146737A1 (ja) * 2009-06-16 2010-12-23 シャープ株式会社 表示パネル用基板および表示装置
JP2012019146A (ja) * 2010-07-09 2012-01-26 Sony Corp 撮像装置、表示撮像装置および電子機器
CN113299674B (zh) * 2021-05-08 2022-09-09 武汉华星光电技术有限公司 阵列基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022690A (ja) * 1988-06-15 1990-01-08 Nec Corp 赤外線センサの製造方法
JP2001244445A (ja) * 2000-02-28 2001-09-07 Fujitsu Ltd 光半導体装置及びその製造方法
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1225944C (zh) * 1999-09-01 2005-11-02 奥斯兰姆奥普托半导体股份有限两合公司 电发光器件制造方法
WO2004001801A2 (en) * 2002-06-19 2003-12-31 The Board Of Trustees Of The Leland Stanford Junior University Insulated-gate semiconductor device and approach involving junction-induced intermediate region
KR100669270B1 (ko) 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
DE102006022126B4 (de) * 2006-05-11 2015-04-09 Infineon Technologies Ag Verfahren zum Herstellen eines elektronischen Bauelementes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022690A (ja) * 1988-06-15 1990-01-08 Nec Corp 赤外線センサの製造方法
JP2001244445A (ja) * 2000-02-28 2001-09-07 Fujitsu Ltd 光半導体装置及びその製造方法
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032632A1 (ja) * 2008-09-19 2010-03-25 株式会社 東芝 光検出素子、光検出装置、及び、光検出機能付き表示装置
US20120058589A1 (en) * 2009-05-20 2012-03-08 Sharp Kabushiki Kaisha Method of producing semiconductor device
US8466020B2 (en) 2009-05-20 2013-06-18 Sharp Kabushiki Kaisha Method of producing semiconductor device
WO2012046628A1 (ja) * 2010-10-06 2012-04-12 シャープ株式会社 光センサ及び該光センサを備えた液晶パネル
US8848126B2 (en) 2010-10-06 2014-09-30 Sharp Kabushiki Kaisha Optical sensor comprising a photodiode having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region

Also Published As

Publication number Publication date
CN101595514B (zh) 2011-11-30
US20100140631A1 (en) 2010-06-10
US8106401B2 (en) 2012-01-31
CN101595514A (zh) 2009-12-02

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