WO2008129602A1 - 表面形状センサとその製造方法 - Google Patents

表面形状センサとその製造方法 Download PDF

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Publication number
WO2008129602A1
WO2008129602A1 PCT/JP2007/057670 JP2007057670W WO2008129602A1 WO 2008129602 A1 WO2008129602 A1 WO 2008129602A1 JP 2007057670 W JP2007057670 W JP 2007057670W WO 2008129602 A1 WO2008129602 A1 WO 2008129602A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating film
film
surface morphology
morphology sensor
detection electrode
Prior art date
Application number
PCT/JP2007/057670
Other languages
English (en)
French (fr)
Inventor
Takahiro Yamagata
Kouichi Nagai
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to KR1020097019898A priority Critical patent/KR101113145B1/ko
Priority to JP2009510640A priority patent/JP4764508B2/ja
Priority to CN2007800524626A priority patent/CN101663558B/zh
Priority to PCT/JP2007/057670 priority patent/WO2008129602A1/ja
Publication of WO2008129602A1 publication Critical patent/WO2008129602A1/ja
Priority to US12/548,027 priority patent/US8294230B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/28—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring contours or curvatures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/34—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring roughness or irregularity of surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)

Abstract

【課題】機械的強度を維持しつつ、感度向上を図ることが可能な表面形状センサとその製造方法を提供する。 【手段】半導体基板10の上方に形成された平坦な上面を有する層間絶縁膜40と、層間絶縁膜40上に形成された検出電極膜42aと、検出電極膜42a及び層間絶縁膜40上に形成された、窒化シリコン膜が表面に露出する上部絶縁膜110と、上部絶縁膜110の上に堆積され、検出電極膜42aの上に窓54aが形成されたテトラヘデラルアモルファスカーボン(ta-C)膜からなる保護絶縁膜54とを有することを特徴とする表面形状センサ。
PCT/JP2007/057670 2007-04-05 2007-04-05 表面形状センサとその製造方法 WO2008129602A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097019898A KR101113145B1 (ko) 2007-04-05 2007-04-05 표면 형상 센서와 그 제조 방법
JP2009510640A JP4764508B2 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法
CN2007800524626A CN101663558B (zh) 2007-04-05 2007-04-05 表面形状传感器及其制造方法
PCT/JP2007/057670 WO2008129602A1 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法
US12/548,027 US8294230B2 (en) 2007-04-05 2009-08-26 Surface profile sensor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/057670 WO2008129602A1 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/548,027 Continuation US8294230B2 (en) 2007-04-05 2009-08-26 Surface profile sensor and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2008129602A1 true WO2008129602A1 (ja) 2008-10-30

Family

ID=39875151

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/057670 WO2008129602A1 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法

Country Status (5)

Country Link
US (1) US8294230B2 (ja)
JP (1) JP4764508B2 (ja)
KR (1) KR101113145B1 (ja)
CN (1) CN101663558B (ja)
WO (1) WO2008129602A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107292224A (zh) * 2016-03-30 2017-10-24 义隆电子股份有限公司 具静电防护的指纹传感器
JP2022058589A (ja) * 2015-09-30 2022-04-12 アップル インコーポレイテッド 生体センサを組み込んだ入力デバイス

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8183593B2 (en) * 2009-10-16 2012-05-22 Oracle America, Inc. Semiconductor die with integrated electro-static discharge device
US9481777B2 (en) 2012-03-30 2016-11-01 The Procter & Gamble Company Method of dewatering in a continuous high internal phase emulsion foam forming process
KR20140053607A (ko) * 2012-10-26 2014-05-08 삼성디스플레이 주식회사 유기 발광 표시 장치
US10020403B2 (en) * 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9984915B2 (en) * 2014-05-30 2018-05-29 Infineon Technologies Ag Semiconductor wafer and method for processing a semiconductor wafer
CN104049803B (zh) * 2014-06-16 2017-03-29 深圳市汇顶科技股份有限公司 一种移动终端
JP6387850B2 (ja) * 2015-02-10 2018-09-12 株式会社デンソー 半導体装置およびその製造方法
TWI563253B (en) 2015-04-14 2016-12-21 Lee Mei Yen Composite substrate sensor device and method of manufacturing such sensor device
CN106056033B (zh) 2015-04-14 2019-07-05 李美燕 复合基板感测装置及其制造方法
CN106991361A (zh) * 2016-01-21 2017-07-28 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
US10147704B2 (en) 2016-05-17 2018-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing thereof
CN108121933B (zh) * 2016-11-28 2022-02-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
KR20180087921A (ko) * 2017-01-25 2018-08-03 삼성디스플레이 주식회사 차량용 표시 장치 및 이를 포함하는 차량 제어 시스템
CN108734709B (zh) * 2018-05-29 2022-03-25 西安工程大学 一种绝缘子凸缘形状参数识别与破坏检测方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003058872A (ja) * 2001-08-21 2003-02-28 Sony Corp 指紋検出装置、その製造方法及び成膜装置
JP2003269907A (ja) * 2002-03-15 2003-09-25 Nippon Telegr & Teleph Corp <Ntt> 表面形状認識用センサの製造方法
JP2004333476A (ja) * 2003-04-17 2004-11-25 Seiko Epson Corp 静電容量検出装置

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221883A (ja) 1985-03-25 1986-10-02 Fujitsu Ltd 個人照合装置
US4728186A (en) 1985-03-03 1988-03-01 Fujitsu Limited Uneven-surface data detection apparatus
EP0292318B1 (en) * 1987-05-22 1993-05-26 Oki Electric Industry Company, Limited Direct-contact-type image sensor
JP3003311B2 (ja) 1991-08-30 2000-01-24 松下電器産業株式会社 指紋センサ
US5559504A (en) 1993-01-08 1996-09-24 Kabushiki Kaisha Toshiba Surface shape sensor, identification device using this sensor, and protected system using this device
JPH07168930A (ja) 1993-01-08 1995-07-04 Toshiba Corp 表面形状センサ、並びにそれを用いた個体認証装置および被起動型システム
DE4433380A1 (de) 1994-09-20 1996-03-21 Roland Man Druckmasch Greiferzylinder
US5858477A (en) 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
AU3224297A (en) 1996-05-31 1998-01-05 Akashic Memories Corporation Highly tetrahedral amorphous carbon films and methods for their production
CN1220707A (zh) 1997-03-20 1999-06-23 摩托罗拉公司 形成碳膜的方法
JP3527708B2 (ja) * 1998-07-09 2004-05-17 インフィネオン テクノロジース アクチエンゲゼルシャフト パッシベーションを有する半導体素子
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6284377B1 (en) 1999-05-03 2001-09-04 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6261693B1 (en) 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6491987B2 (en) 1999-05-03 2002-12-10 Guardian Indusries Corp. Process for depositing DLC inclusive coating with surface roughness on substrate
US6312808B1 (en) 1999-05-03 2001-11-06 Guardian Industries Corporation Hydrophobic coating with DLC & FAS on substrate
US6280834B1 (en) 1999-05-03 2001-08-28 Guardian Industries Corporation Hydrophobic coating including DLC and/or FAS on substrate
US6303225B1 (en) 2000-05-24 2001-10-16 Guardian Industries Corporation Hydrophilic coating including DLC on substrate
US6740211B2 (en) 2001-12-18 2004-05-25 Guardian Industries Corp. Method of manufacturing windshield using ion beam milling of glass substrate(s)
US6368664B1 (en) 1999-05-03 2002-04-09 Guardian Industries Corp. Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon
US6475573B1 (en) 1999-05-03 2002-11-05 Guardian Industries Corp. Method of depositing DLC inclusive coating on substrate
US6273488B1 (en) 1999-05-03 2001-08-14 Guardian Industries Corporation System and method for removing liquid from rear window of a vehicle
US6447891B1 (en) 1999-05-03 2002-09-10 Guardian Industries Corp. Low-E coating system including protective DLC
US6335086B1 (en) 1999-05-03 2002-01-01 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6808606B2 (en) 1999-05-03 2004-10-26 Guardian Industries Corp. Method of manufacturing window using ion beam milling of glass substrate(s)
US6461731B1 (en) 1999-05-03 2002-10-08 Guardian Industries Corp. Solar management coating system including protective DLC
US6277480B1 (en) 1999-05-03 2001-08-21 Guardian Industries Corporation Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
GB9910842D0 (en) 1999-05-10 1999-07-07 Univ Nanyang Composite coatings
US6423995B1 (en) * 1999-07-26 2002-07-23 Stmicroelectronics, Inc. Scratch protection for direct contact sensors
US6713179B2 (en) 2000-05-24 2004-03-30 Guardian Industries Corp. Hydrophilic DLC on substrate with UV exposure
JP3658342B2 (ja) 2000-05-30 2005-06-08 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置
JP2002194123A (ja) 2000-12-26 2002-07-10 Sony Corp エッチング方法
JP3624843B2 (ja) 2001-03-16 2005-03-02 株式会社島津製作所 保護膜および保護膜作成方法
JP2002294470A (ja) 2001-04-02 2002-10-09 Sony Corp エッチング方法
JPWO2002088415A1 (ja) * 2001-04-23 2004-08-19 ソニー株式会社 成膜方法
JP2003301257A (ja) 2002-04-12 2003-10-24 Hitachi Ltd 炭素質皮膜の形成方法及び磁気ディスクの製造方法
US6923891B2 (en) 2003-01-10 2005-08-02 Nanofilm Technologies International Pte Ltd. Copper interconnects
JP4253515B2 (ja) 2003-02-24 2009-04-15 富士通株式会社 カーボン保護膜の製造方法、磁気記録媒体の製造方法及び磁気ヘッドの製造方法、並びに成膜装置
JP3913194B2 (ja) * 2003-05-30 2007-05-09 シャープ株式会社 窒化物半導体発光素子
US7300556B2 (en) * 2003-08-29 2007-11-27 Hitachi Global Storage Technologies Netherlands B.V. Method for depositing a thin film adhesion layer
KR100561851B1 (ko) * 2003-11-18 2006-03-16 삼성전자주식회사 지문 인식 센서 및 그 제조 방법
KR100714710B1 (ko) 2006-02-22 2007-05-04 삼성전자주식회사 입출력 작업에 의해 블로킹된 스레드를 강제 종료하는 장치및 방법
JP5045028B2 (ja) * 2006-08-16 2012-10-10 富士通セミコンダクター株式会社 表面形状センサとその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003058872A (ja) * 2001-08-21 2003-02-28 Sony Corp 指紋検出装置、その製造方法及び成膜装置
JP2003269907A (ja) * 2002-03-15 2003-09-25 Nippon Telegr & Teleph Corp <Ntt> 表面形状認識用センサの製造方法
JP2004333476A (ja) * 2003-04-17 2004-11-25 Seiko Epson Corp 静電容量検出装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022058589A (ja) * 2015-09-30 2022-04-12 アップル インコーポレイテッド 生体センサを組み込んだ入力デバイス
CN107292224A (zh) * 2016-03-30 2017-10-24 义隆电子股份有限公司 具静电防护的指纹传感器

Also Published As

Publication number Publication date
US8294230B2 (en) 2012-10-23
KR20100005044A (ko) 2010-01-13
JP4764508B2 (ja) 2011-09-07
JPWO2008129602A1 (ja) 2010-07-22
CN101663558A (zh) 2010-03-03
US20090309180A1 (en) 2009-12-17
CN101663558B (zh) 2011-06-22
KR101113145B1 (ko) 2012-03-13

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