WO2008123441A1 - 多結晶薄膜とその製造方法及び酸化物超電導導体 - Google Patents

多結晶薄膜とその製造方法及び酸化物超電導導体 Download PDF

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Publication number
WO2008123441A1
WO2008123441A1 PCT/JP2008/056160 JP2008056160W WO2008123441A1 WO 2008123441 A1 WO2008123441 A1 WO 2008123441A1 JP 2008056160 W JP2008056160 W JP 2008056160W WO 2008123441 A1 WO2008123441 A1 WO 2008123441A1
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WO
WIPO (PCT)
Prior art keywords
thin film
polycrystalline thin
producing
same
oxide superconductor
Prior art date
Application number
PCT/JP2008/056160
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English (en)
French (fr)
Inventor
Yasuhiro Iijima
Satoru Hanyu
Original Assignee
Fujikura Ltd.
International Superconductivity Technology Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd., International Superconductivity Technology Center filed Critical Fujikura Ltd.
Priority to JP2009509228A priority Critical patent/JP4359649B2/ja
Priority to CN2008800109295A priority patent/CN101652505B/zh
Priority to EP08739278.3A priority patent/EP2138611B1/en
Publication of WO2008123441A1 publication Critical patent/WO2008123441A1/ja
Priority to US12/569,601 priority patent/US8299363B2/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　　良好な結晶配向性を維持しつつも中間層を薄膜化することで、膜の内部応力に起因する基板の反り返りを防止した多結晶薄膜を提供することを目的とし、本発明の多結晶薄膜は、金属基材上に順に、第一層と第二層を積層してなる中間層をなし、前記第一層と前記第二層の結晶構造はそれぞれ、岩塩構造と蛍石構造であることを特徴とする。
PCT/JP2008/056160 2007-03-29 2008-03-28 多結晶薄膜とその製造方法及び酸化物超電導導体 WO2008123441A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009509228A JP4359649B2 (ja) 2007-03-29 2008-03-28 多結晶薄膜とその製造方法及び酸化物超電導導体
CN2008800109295A CN101652505B (zh) 2007-03-29 2008-03-28 多晶薄膜和其制造方法及氧化物超导导体
EP08739278.3A EP2138611B1 (en) 2007-03-29 2008-03-28 Polycrystalline thin film and method for producing the same
US12/569,601 US8299363B2 (en) 2007-03-29 2009-09-29 Polycrystalline thin film, method for producing the same and oxide superconductor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007089479 2007-03-29
JP2007-089479 2007-03-29
JP2007285452 2007-11-01
JP2007-285452 2007-11-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/569,601 Continuation US8299363B2 (en) 2007-03-29 2009-09-29 Polycrystalline thin film, method for producing the same and oxide superconductor

Publications (1)

Publication Number Publication Date
WO2008123441A1 true WO2008123441A1 (ja) 2008-10-16

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Application Number Title Priority Date Filing Date
PCT/JP2008/056160 WO2008123441A1 (ja) 2007-03-29 2008-03-28 多結晶薄膜とその製造方法及び酸化物超電導導体

Country Status (5)

Country Link
US (1) US8299363B2 (ja)
EP (1) EP2138611B1 (ja)
JP (2) JP4359649B2 (ja)
CN (2) CN102676993B (ja)
WO (1) WO2008123441A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009106A (ja) * 2009-06-26 2011-01-13 Fujikura Ltd 酸化物超電導導体用基材及び酸化物超電導導体
JP2011006751A (ja) * 2009-06-26 2011-01-13 Fujikura Ltd 配向多結晶基材およびその製造方法と酸化物超電導導体
JP2011060431A (ja) * 2009-09-04 2011-03-24 Fujikura Ltd 酸化物超電導導体用基材及び酸化物超電導導体
WO2011052734A1 (ja) * 2009-10-30 2011-05-05 財団法人国際超電導産業技術研究センター 酸化物超電導導体用基材及びその製造方法と酸化物超電導導体及びその製造方法
JP2011137199A (ja) * 2009-12-28 2011-07-14 Fujikura Ltd ３回対称ＭｇＯ膜及び４回対称ＭｇＯ膜の成膜方法、酸化物超電導導体
JP2012072445A (ja) * 2010-09-29 2012-04-12 Fujikura Ltd 成膜方法および酸化物超電導導体
JP2013057099A (ja) * 2011-09-08 2013-03-28 Fujikura Ltd 酸化物超電導導体用基材の製造方法、酸化物超電導導体用基材および酸化物超電導導体
JP2014077166A (ja) * 2012-10-10 2014-05-01 Sumitomo Electric Ind Ltd 薄膜超電導線材用の中間層付基板とその製造方法、および薄膜超電導線材

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
JP5227722B2 (ja) * 2008-09-30 2013-07-03 株式会社フジクラ 多結晶薄膜とその製造方法及び酸化物超電導導体
US9528900B2 (en) * 2009-09-19 2016-12-27 Bruce Gregory Balanced and eccentric mass compact pendulum with dynamic tuning
WO2011052552A1 (ja) * 2009-10-27 2011-05-05 古河電気工業株式会社 超電導線材用テープ基材及び超電導線材
JP5739726B2 (ja) * 2010-05-27 2015-06-24 古河電気工業株式会社 超電導薄膜用基材の製造方法、超電導薄膜用基材及び超電導薄膜
US8460340B2 (en) 2010-08-30 2013-06-11 Depuy Mitek, Llc Knotless suture anchor
US8469998B2 (en) 2010-08-30 2013-06-25 Depuy Mitek, Llc Knotless suture anchor
JP5694866B2 (ja) * 2011-06-24 2015-04-01 株式会社フジクラ 超電導線材
JPWO2013015328A1 (ja) * 2011-07-25 2015-02-23 古河電気工業株式会社 超電導薄膜用基材、超電導薄膜及び超電導薄膜の製造方法
CN102751040B (zh) * 2012-05-29 2014-06-11 电子科技大学 高温超导双面带材的制备方法
US20180145317A1 (en) * 2016-11-18 2018-05-24 Semiconductor Energy Laboratory Co., Ltd. Positive electrode active material, method for manufacturing positive electrode active material, and secondary battery
JP7180492B2 (ja) * 2019-03-26 2022-11-30 Tdk株式会社 誘電体膜および電子部品

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JPH04329865A (ja) 1991-04-30 1992-11-18 Fujikura Ltd 多結晶薄膜
WO1999025908A1 (en) 1997-11-13 1999-05-27 The Board Of Trustees Of The Leland Stanford Junior University Thin films having a rock-salt-like structure deposited on amorphous surfaces
JP2000277009A (ja) * 1999-03-25 2000-10-06 Mitsubishi Electric Corp 交流型プラズマディスプレイパネル用酸化マグネシウム膜の製造方法、交流型プラズマディスプレイパネル用酸化マグネシウム膜、交流型プラズマディスプレイパネル及び交流型プラズマディスプレイ装置
WO2001040536A1 (fr) 1999-11-29 2001-06-07 Fujikura Ltd. Film mince polycristallin et procede de preparation de ce dernier, oxyde supraconducteur et son procede de preparation associe
EP1348553A1 (en) 2002-03-25 2003-10-01 Seiko Epson Corporation Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer
US20040028954A1 (en) 2000-12-06 2004-02-12 Arendt Paul N. High temperature superconducting thick films

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GROVES J.R. ET AL.: "Ion-Beam Assisted Deposition of Bi-axially Aligned MgO Template Films for YBCO Coated Conductors", IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, vol. 9, no. 2, 1999, pages 1964 - 1966, XP011082412 *
GROVES J.R. ET AL.: "Ion-Beam Assisted Deposition of Bi-axially Aligned MgO Template Films for YBCO Coated Conductors", IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, vol. 9, no. 2, 1999, pages 1964 - 1966, XP011502462, DOI: doi:10.1109/77.784846
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See also references of EP2138611A4

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009106A (ja) * 2009-06-26 2011-01-13 Fujikura Ltd 酸化物超電導導体用基材及び酸化物超電導導体
JP2011006751A (ja) * 2009-06-26 2011-01-13 Fujikura Ltd 配向多結晶基材およびその製造方法と酸化物超電導導体
JP2011060431A (ja) * 2009-09-04 2011-03-24 Fujikura Ltd 酸化物超電導導体用基材及び酸化物超電導導体
WO2011052734A1 (ja) * 2009-10-30 2011-05-05 財団法人国際超電導産業技術研究センター 酸化物超電導導体用基材及びその製造方法と酸化物超電導導体及びその製造方法
JP2011096556A (ja) * 2009-10-30 2011-05-12 International Superconductivity Technology Center 酸化物超電導導体用基材及びその製造方法と酸化物超電導導体及びその製造方法
CN102598159A (zh) * 2009-10-30 2012-07-18 公益财团法人国际超电导产业技术研究中心 氧化物超导体用基材及其制造方法和氧化物超导体及其制造方法
JP2011137199A (ja) * 2009-12-28 2011-07-14 Fujikura Ltd ３回対称ＭｇＯ膜及び４回対称ＭｇＯ膜の成膜方法、酸化物超電導導体
JP2012072445A (ja) * 2010-09-29 2012-04-12 Fujikura Ltd 成膜方法および酸化物超電導導体
JP2013057099A (ja) * 2011-09-08 2013-03-28 Fujikura Ltd 酸化物超電導導体用基材の製造方法、酸化物超電導導体用基材および酸化物超電導導体
JP2014077166A (ja) * 2012-10-10 2014-05-01 Sumitomo Electric Ind Ltd 薄膜超電導線材用の中間層付基板とその製造方法、および薄膜超電導線材

Also Published As

Publication number Publication date
JP2009218226A (ja) 2009-09-24
EP2138611B1 (en) 2015-08-19
US20100012349A1 (en) 2010-01-21
JPWO2008123441A1 (ja) 2010-07-15
JP5103443B2 (ja) 2012-12-19
US8299363B2 (en) 2012-10-30
CN102676993A (zh) 2012-09-19
JP4359649B2 (ja) 2009-11-04
CN101652505B (zh) 2012-05-30
EP2138611A1 (en) 2009-12-30
EP2138611A4 (en) 2012-11-07
CN102676993B (zh) 2015-03-04
CN101652505A (zh) 2010-02-17

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