PL2031082T3 - Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami - Google Patents
Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwamiInfo
- Publication number
- PL2031082T3 PL2031082T3 PL07301336T PL07301336T PL2031082T3 PL 2031082 T3 PL2031082 T3 PL 2031082T3 PL 07301336 T PL07301336 T PL 07301336T PL 07301336 T PL07301336 T PL 07301336T PL 2031082 T3 PL2031082 T3 PL 2031082T3
- Authority
- PL
- Poland
- Prior art keywords
- crystallographic texture
- module
- metal substrate
- photovoltaic cell
- depositing fine
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07301336.9A EP2031082B1 (fr) | 2007-08-31 | 2007-08-31 | Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces |
Publications (1)
Publication Number | Publication Date |
---|---|
PL2031082T3 true PL2031082T3 (pl) | 2015-03-31 |
Family
ID=38872469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL07301336T PL2031082T3 (pl) | 2007-08-31 | 2007-08-31 | Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami |
Country Status (17)
Country | Link |
---|---|
US (1) | US9309592B2 (pl) |
EP (1) | EP2031082B1 (pl) |
JP (1) | JP5592259B2 (pl) |
KR (1) | KR101537305B1 (pl) |
CN (2) | CN103397247B (pl) |
AU (1) | AU2008294609B2 (pl) |
BR (1) | BRPI0815837B1 (pl) |
CA (1) | CA2698126C (pl) |
EA (1) | EA016990B1 (pl) |
ES (1) | ES2522582T3 (pl) |
HK (1) | HK1191985A1 (pl) |
IL (1) | IL205494A (pl) |
MY (1) | MY150031A (pl) |
PL (1) | PL2031082T3 (pl) |
PT (1) | PT2031082E (pl) |
WO (1) | WO2009030865A2 (pl) |
ZA (1) | ZA201001452B (pl) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL2031082T3 (pl) * | 2007-08-31 | 2015-03-31 | Aperam Alloys Imphy | Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami |
JP5589777B2 (ja) * | 2010-11-05 | 2014-09-17 | Jfeスチール株式会社 | 太陽電池基板用クロム含有フェライト系鋼板 |
JP5589776B2 (ja) * | 2010-11-05 | 2014-09-17 | Jfeスチール株式会社 | 太陽電池基板用クロム含有フェライト系鋼板 |
JP5625765B2 (ja) * | 2010-11-05 | 2014-11-19 | Jfeスチール株式会社 | 太陽電池基板用クロム含有フェライト系鋼板 |
JP5971890B2 (ja) * | 2010-12-16 | 2016-08-17 | セイコーインスツル株式会社 | 時計部品の製造方法および時計部品 |
FR2971086B1 (fr) | 2011-01-31 | 2014-04-18 | Inst Polytechnique Grenoble | Structure adaptee a la formation de cellules solaires |
US8937332B2 (en) * | 2011-02-04 | 2015-01-20 | Osram Sylvania Inc. | Wavelength converter for an LED and LED containing same |
US20140197801A1 (en) * | 2011-05-20 | 2014-07-17 | The Board Of Trustees Of The University Of Illinois | Silicon-based electrode for a lithium-ion cell |
FR2975833B1 (fr) | 2011-05-24 | 2013-06-28 | Ecole Polytech | Anodes de batteries li-ion |
KR101422609B1 (ko) * | 2011-11-17 | 2014-07-24 | 한국생산기술연구원 | 텍스처 구조를 갖는 열팽창 제어형 플렉서블 금속 기판재 |
CN105132809B (zh) * | 2015-09-02 | 2017-05-31 | 光昱(厦门)新能源有限公司 | 一种用于太阳能电池丝网印刷台面的合金及其制备方法 |
TWI596788B (zh) * | 2015-11-10 | 2017-08-21 | 財團法人工業技術研究院 | 雙面光電轉換元件 |
RU2635982C1 (ru) * | 2016-10-28 | 2017-11-17 | Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) | Способ изготовления ленты из железоникелевого сплава Fe-(49-50,5) мас. % Ni, имеющей острую кубическую текстуру |
KR101921595B1 (ko) * | 2016-12-13 | 2018-11-26 | 주식회사 포스코 | 리징성 및 표면품질이 우수한 페라이트계 스테인리스강 및 그 제조방법 |
CN107119234B (zh) * | 2017-05-11 | 2019-01-18 | 东北大学 | 一种因瓦合金带材的细晶强化方法 |
US11479841B2 (en) * | 2017-06-19 | 2022-10-25 | Praxair S.T. Technology, Inc. | Thin and texturized films having fully uniform coverage of a non-smooth surface derived from an additive overlaying process |
CN109735778A (zh) * | 2019-01-31 | 2019-05-10 | 河南城建学院 | 一种高强度立方织构金属基带的制备方法 |
US11482417B2 (en) * | 2019-08-23 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing semiconductor structure |
CN110724922B (zh) * | 2019-10-31 | 2022-08-16 | 汕头大学 | 一种柔性衬底上晶体取向和极性可控的外延azo薄膜及其制备方法 |
CN111180538A (zh) * | 2019-12-31 | 2020-05-19 | 中威新能源(成都)有限公司 | 一种具有金字塔叠加结构的单晶硅片及制备方法 |
CN112434984A (zh) * | 2020-12-21 | 2021-03-02 | 上海鼎经自动化科技股份有限公司 | 通过金属切削端面微观几何形状实现标识和识别的方法 |
CN114481101B (zh) * | 2021-12-15 | 2023-09-29 | 中南大学 | 一种调控金属镀层晶面取向的方法获得的金属材料和应用 |
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JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
EP0541033A3 (en) | 1991-11-08 | 1993-06-30 | Siemens Aktiengesellschaft | Process of fabrication of thin-film polycristalline silicon solar cells |
JP3197036B2 (ja) | 1991-11-14 | 2001-08-13 | 鐘淵化学工業株式会社 | 結晶質シリコン薄膜の形成方法 |
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AUPM982294A0 (en) | 1994-12-02 | 1995-01-05 | Pacific Solar Pty Limited | Method of manufacturing a multilayer solar cell |
US5679180A (en) * | 1995-06-22 | 1997-10-21 | United Technologies Corporation | γ strengthened single crystal turbine blade alloy for hydrogen fueled propulsion systems |
JP2992638B2 (ja) * | 1995-06-28 | 1999-12-20 | キヤノン株式会社 | 光起電力素子の電極構造及び製造方法並びに太陽電池 |
FR2745298B1 (fr) | 1996-02-27 | 1998-04-24 | Imphy Sa | Alliage fer-nickel et bande laminee a froid a texture cubique |
MY123398A (en) * | 1997-05-09 | 2006-05-31 | Toyo Kohan Co Ltd | Invar alloy steel sheet for shadow mask, method for producing same, shadow mask, and color picture tube |
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US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
JPH11186576A (ja) * | 1997-12-19 | 1999-07-09 | Dainippon Printing Co Ltd | 薄膜太陽電池とその製造方法 |
AUPP290398A0 (en) * | 1998-04-09 | 1998-05-07 | Pacific Solar Pty Limited | Aluminium film interrupting process |
JP2000294818A (ja) * | 1999-04-05 | 2000-10-20 | Sony Corp | 薄膜半導体素子およびその製造方法 |
JP2000306219A (ja) * | 1999-04-23 | 2000-11-02 | Victor Co Of Japan Ltd | 磁気抵抗効果膜及びその製造方法 |
JP2000357660A (ja) * | 1999-06-15 | 2000-12-26 | Sharp Corp | 多結晶シリコン膜を備えた基板及びその形成方法、並びに該膜を用いた太陽電池 |
JP4891505B2 (ja) * | 1999-07-23 | 2012-03-07 | アメリカン スーパーコンダクター コーポレイション | 多層体を作製するための方法及び組成物 |
WO2001015245A1 (en) * | 1999-08-24 | 2001-03-01 | Electric Power Research Institute, Inc. | Surface control alloy substrates and methods of manufacture therefor |
US20030192585A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Photovoltaic cells incorporating rigid substrates |
TW501286B (en) * | 2001-06-07 | 2002-09-01 | Ind Tech Res Inst | Polysilicon thin film solar cell substrate |
US7087113B2 (en) * | 2002-07-03 | 2006-08-08 | Ut-Battelle, Llc | Textured substrate tape and devices thereof |
GB0227718D0 (en) * | 2002-11-28 | 2003-01-08 | Eastman Kodak Co | A photovoltaic device and a manufacturing method hereof |
FR2849061B1 (fr) * | 2002-12-20 | 2005-06-03 | Imphy Ugine Precision | Alliage fer-nickel a tres faible coefficient de dilatation thermique pour la fabrication de masques d'ombres |
US7261776B2 (en) * | 2004-03-30 | 2007-08-28 | American Superconductor Corporation | Deposition of buffer layers on textured metal surfaces |
DE602007003216D1 (de) * | 2006-04-18 | 2009-12-24 | Dow Corning | Fotovoltaische anordnung auf kupfer-indium-diselenidbasis und herstellungsverfahren dafür |
US20090014049A1 (en) * | 2007-07-13 | 2009-01-15 | Miasole | Photovoltaic module with integrated energy storage |
PL2031082T3 (pl) * | 2007-08-31 | 2015-03-31 | Aperam Alloys Imphy | Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami |
-
2007
- 2007-08-31 PL PL07301336T patent/PL2031082T3/pl unknown
- 2007-08-31 PT PT73013369T patent/PT2031082E/pt unknown
- 2007-08-31 EP EP07301336.9A patent/EP2031082B1/fr active Active
- 2007-08-31 ES ES07301336.9T patent/ES2522582T3/es active Active
-
2008
- 2008-08-28 WO PCT/FR2008/051542 patent/WO2009030865A2/fr active Application Filing
- 2008-08-28 CA CA2698126A patent/CA2698126C/fr active Active
- 2008-08-28 US US12/675,449 patent/US9309592B2/en active Active
- 2008-08-28 MY MYPI2010000851A patent/MY150031A/en unknown
- 2008-08-28 JP JP2010522421A patent/JP5592259B2/ja active Active
- 2008-08-28 KR KR1020107004602A patent/KR101537305B1/ko active IP Right Grant
- 2008-08-28 AU AU2008294609A patent/AU2008294609B2/en active Active
- 2008-08-28 EA EA201000408A patent/EA016990B1/ru not_active IP Right Cessation
- 2008-08-28 CN CN201310112463.2A patent/CN103397247B/zh active Active
- 2008-08-28 CN CN2008801135634A patent/CN101842508B/zh active Active
- 2008-08-28 BR BRPI0815837A patent/BRPI0815837B1/pt active IP Right Grant
-
2010
- 2010-02-26 ZA ZA2010/01452A patent/ZA201001452B/en unknown
- 2010-05-02 IL IL205494A patent/IL205494A/en active IP Right Grant
-
2014
- 2014-05-02 HK HK14104235.1A patent/HK1191985A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JP2010538448A (ja) | 2010-12-09 |
BRPI0815837B1 (pt) | 2019-09-03 |
AU2008294609B2 (en) | 2012-09-13 |
AU2008294609A1 (en) | 2009-03-12 |
EP2031082B1 (fr) | 2014-09-03 |
CA2698126C (fr) | 2016-08-09 |
EA201000408A1 (ru) | 2010-10-29 |
IL205494A (en) | 2013-08-29 |
MY150031A (en) | 2013-11-29 |
CN103397247A (zh) | 2013-11-20 |
CA2698126A1 (fr) | 2009-03-12 |
CN101842508B (zh) | 2013-05-01 |
KR20100080506A (ko) | 2010-07-08 |
WO2009030865A3 (fr) | 2009-04-30 |
US9309592B2 (en) | 2016-04-12 |
JP5592259B2 (ja) | 2014-09-17 |
CN101842508A (zh) | 2010-09-22 |
WO2009030865A2 (fr) | 2009-03-12 |
ES2522582T3 (es) | 2014-11-17 |
PT2031082E (pt) | 2014-11-04 |
US20100269887A1 (en) | 2010-10-28 |
CN103397247B (zh) | 2015-09-02 |
KR101537305B1 (ko) | 2015-07-22 |
EA016990B1 (ru) | 2012-08-30 |
EP2031082A1 (fr) | 2009-03-04 |
IL205494A0 (en) | 2011-07-31 |
BRPI0815837A2 (pt) | 2018-01-09 |
ZA201001452B (en) | 2010-11-24 |
HK1191985A1 (en) | 2014-08-08 |
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