SG10201404692XA - Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device - Google Patents

Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device

Info

Publication number
SG10201404692XA
SG10201404692XA SG10201404692XA SG10201404692XA SG10201404692XA SG 10201404692X A SG10201404692X A SG 10201404692XA SG 10201404692X A SG10201404692X A SG 10201404692XA SG 10201404692X A SG10201404692X A SG 10201404692XA SG 10201404692X A SG10201404692X A SG 10201404692XA
Authority
SG
Singapore
Prior art keywords
semiconductor
substrate
producing
growth
electronic
Prior art date
Application number
SG10201404692XA
Inventor
Hiroshi Fujioka
Tetsuro Hirasaki
Hitoshi Ue
Junya Yamashita
Hiroaki Hatori
Original Assignee
Univ Tokyo
Tokai Carbon Kk
Nat Inst Of Advanced Ind Scien
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tokyo, Tokai Carbon Kk, Nat Inst Of Advanced Ind Scien filed Critical Univ Tokyo
Publication of SG10201404692XA publication Critical patent/SG10201404692XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
SG10201404692XA 2009-09-07 2010-09-07 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device SG10201404692XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009206438A JP2011057474A (en) 2009-09-07 2009-09-07 Semiconductor substrate, method for producing the semiconductor substrate, substrate for semiconductor growth, method for producing the substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic equipment

Publications (1)

Publication Number Publication Date
SG10201404692XA true SG10201404692XA (en) 2014-10-30

Family

ID=43649428

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201404692XA SG10201404692XA (en) 2009-09-07 2010-09-07 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device
SG2012015186A SG178974A1 (en) 2009-09-07 2010-09-07 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012015186A SG178974A1 (en) 2009-09-07 2010-09-07 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device

Country Status (8)

Country Link
US (1) US9000449B2 (en)
EP (1) EP2476787A4 (en)
JP (1) JP2011057474A (en)
KR (1) KR20120062745A (en)
CN (1) CN102482797A (en)
SG (2) SG10201404692XA (en)
TW (1) TWI509660B (en)
WO (1) WO2011027894A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012137429A1 (en) * 2011-04-01 2012-10-11 株式会社島津製作所 Process for producing radiation detector, and radiation detector
US9406848B2 (en) 2011-06-10 2016-08-02 Basf Se Color converter
JP5896701B2 (en) * 2011-11-28 2016-03-30 東洋炭素株式会社 Graphite material provided with gallium nitride layer and method for producing the same
JP5812342B2 (en) * 2011-12-12 2015-11-11 東海カーボン株式会社 Method for producing graphite film
US9396933B2 (en) 2012-04-26 2016-07-19 Applied Materials, Inc. PVD buffer layers for LED fabrication
WO2014084164A1 (en) 2012-11-27 2014-06-05 独立行政法人産業技術総合研究所 Precursor fiber for carbon fibers, carbon fiber, and method for producing carbon fiber
GB201311101D0 (en) * 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
KR101790458B1 (en) * 2014-03-31 2017-10-25 엔지케이 인슐레이터 엘티디 Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using smae
TWI711072B (en) 2015-07-31 2020-11-21 挪威商卡亞奈米公司 Processes for growing nanowires or nanopyramids
US9890240B2 (en) 2016-05-25 2018-02-13 International Business Machines Corporation Ladder polybenzodifurans
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN113564536B (en) * 2021-06-11 2022-08-26 北京航空航天大学 Device for preparing double-layer ceramic layer by automatically evaporating ceramic target

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3792024A (en) * 1972-07-27 1974-02-12 Celanese Corp Polymerization of benzimidazobenzophenanthroline-ladder polymer
US3985679A (en) * 1975-04-28 1976-10-12 Celanese Corporation Transition metal catalyst supported on particulate high surface area BBB type polymer
JP3152316B2 (en) 1991-05-31 2001-04-03 東邦レーヨン株式会社 Carbon film and method for producing the same
JP3239671B2 (en) * 1995-03-08 2001-12-17 松下電器産業株式会社 Film heaters, heated seats, evaporation boats and heating furnaces
JPH09285722A (en) * 1996-04-24 1997-11-04 Dainippon Ink & Chem Inc Production of gas separating membrane
US7704422B2 (en) 2004-08-16 2010-04-27 Electromaterials, Inc. Process for producing monolithic porous carbon disks from aromatic organic precursors
WO2006023419A1 (en) 2004-08-16 2006-03-02 Jing Wang Processes for producing monolithic porous carbon disks from aromatic organic precursors
US8414805B2 (en) 2004-08-16 2013-04-09 Electromaterials, Inc. Porous carbon foam composites, applications, and processes of making
JP5386747B2 (en) * 2008-02-21 2014-01-15 公益財団法人神奈川科学技術アカデミー Semiconductor substrate, semiconductor element, light emitting element, and electronic element

Also Published As

Publication number Publication date
EP2476787A4 (en) 2014-12-31
EP2476787A1 (en) 2012-07-18
US9000449B2 (en) 2015-04-07
KR20120062745A (en) 2012-06-14
JP2011057474A (en) 2011-03-24
WO2011027894A1 (en) 2011-03-10
TWI509660B (en) 2015-11-21
US20120187422A1 (en) 2012-07-26
TW201133554A (en) 2011-10-01
CN102482797A (en) 2012-05-30
SG178974A1 (en) 2012-04-27

Similar Documents

Publication Publication Date Title
SG10201404692XA (en) Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device
EP2360719A4 (en) Epitaxial substrate for electronic devices and manufacturing method therefor
EP2392549A4 (en) Glass substrate for semiconductor device member, and process for producing glass substrate for semiconductor device member
TWI368941B (en) Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
EP2352360A4 (en) Substrate for electronic device, method for producing same, electronic device using same, method for producing same and substrate for organic led element
EP2420599A4 (en) Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
EP2432005A4 (en) Epitaxial substrate for electronic device and process for producing same
EP2357661A4 (en) Epitaxial substrate for electronic device and manufacturing method thereof
EP2534699A4 (en) Metal substrate with insulation layer and manufacturing method thereof, semiconductor device and manufacturing method thereof, solar cell and manufacturing method thereof, electronic circuit and manufacturing method thereof, and light-emitting element and manufacturing method thereof
EP2120136A4 (en) Display panel substrate, display panel, display device and method for manufacturing display panel substrate
EP2296177A4 (en) Substrate for power module, power module, and method for producing substrate for power module
EP2498293A4 (en) Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
EP2245673A4 (en) Thin-film photovoltaic devices and related manufacturing methods
EP2359407A4 (en) Thin film photovoltaic module manufacturing methods and structures
EP2390240A4 (en) Method for producing electronic device substrate, method for manufacturing electronic device, electronic device substrate, and electronic device
IL201814A0 (en) Method for obtaining a textured substrate for a photovoltaic panel
EP2432001A4 (en) Method for producing semiconductor substrate
EP2413374A4 (en) Method for roughening substrate surface and method for manufacturing photovoltaic device
EP2381018A4 (en) Compound semiconductor substrate, semiconductor device, and process for producing the semiconductor device
EP2477217A4 (en) Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module
EP2439786A4 (en) Solar photovoltaic device and a production method for the same
HK1191985A1 (en) Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method
HK1147140A1 (en) Process for producing substrate for power module, substrate for power module, and power module
EP2328185A4 (en) Solar cell module manufacturing method and precursor for solar cell module
EP2377976A4 (en) Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate