WO2008114336A1 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
WO2008114336A1
WO2008114336A1 PCT/JP2007/053198 JP2007053198W WO2008114336A1 WO 2008114336 A1 WO2008114336 A1 WO 2008114336A1 JP 2007053198 W JP2007053198 W JP 2007053198W WO 2008114336 A1 WO2008114336 A1 WO 2008114336A1
Authority
WO
WIPO (PCT)
Prior art keywords
buffer layer
layer
value
volume resistivity
dislocation density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/053198
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Sato
Sadahiro Kato
Seikoh Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of WO2008114336A1 publication Critical patent/WO2008114336A1/ja
Priority to US12/539,736 priority Critical patent/US8134181B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

　電流コラプスを悪化させることなくバッファ層を高抵抗化し、バッファ層中に発生するリーク電流を低減させること。ＨＥＭＴ１は、基板２上に、それぞれＧａＮ系化合物半導体からなる低温バッファ層３、バッファ層４、電子走行層５および電子供給層６を、この順に積層して有し、電子供給層６上には、ソース電極７Ｓ、ゲート電極７Ｇおよびドレイン電極７Ｄを備える。バッファ層４の転位密度は、転位密度に対する体積抵抗率が極大値近傍となる密度値を有する。また、バッファ層４の（１０２）面に対するＸ線ロッキングカーブの半値幅は、この半値幅に対する体積抵抗率が極大値近傍となる幅値を有する。
PCT/JP2007/053198 2007-02-20 2007-02-21 半導体素子 Ceased WO2008114336A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/539,736 US8134181B2 (en) 2007-02-20 2009-08-12 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007039956A JP2008205221A (ja) 2007-02-20 2007-02-20 半導体素子
JP2007-039956 2007-02-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/539,736 Continuation US8134181B2 (en) 2007-02-20 2009-08-12 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2008114336A1 true WO2008114336A1 (ja) 2008-09-25

Family

ID=39765456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053198 Ceased WO2008114336A1 (ja) 2007-02-20 2007-02-21 半導体素子

Country Status (3)

Country Link
US (1) US8134181B2 (ja)
JP (1) JP2008205221A (ja)
WO (1) WO2008114336A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058561A1 (ja) * 2008-11-21 2010-05-27 パナソニック株式会社 電界効果トランジスタ
US20100244097A1 (en) * 2009-03-26 2010-09-30 Furukawa Electric Co., Ltd. Field effect transistor

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205221A (ja) * 2007-02-20 2008-09-04 Furukawa Electric Co Ltd:The 半導体素子
JP5460087B2 (ja) * 2009-03-13 2014-04-02 古河電気工業株式会社 電界効果トランジスタ
JP5367429B2 (ja) * 2009-03-25 2013-12-11 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP2010258441A (ja) * 2009-03-31 2010-11-11 Furukawa Electric Co Ltd:The 電界効果トランジスタ
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices
JP5626010B2 (ja) * 2011-02-25 2014-11-19 富士通株式会社 半導体装置及びその製造方法、電源装置
JP2013207102A (ja) * 2012-03-28 2013-10-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP6050018B2 (ja) * 2012-04-04 2016-12-21 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2014072427A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
JP2015133354A (ja) * 2014-01-09 2015-07-23 日立金属株式会社 窒化物半導体エピタキシャルウェハ及び窒化物半導体デバイス
JP5907200B2 (ja) 2014-03-18 2016-04-26 セイコーエプソン株式会社 光検出ユニット及び生体情報検出装置
EP3243212B1 (en) * 2015-01-09 2021-06-09 Swegan AB Semiconductor device structure and methods of its production
ITUB20155862A1 (it) 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
US11522078B2 (en) * 2017-07-07 2022-12-06 Indian Institute Of Science High electron mobility transistor (HEMT) with RESURF junction
US12002881B2 (en) * 2017-07-20 2024-06-04 Swegan Ab Heterostructure for a high electron mobility transistor and a method of producing the same
CN111373513B (zh) * 2017-11-20 2023-10-13 罗姆股份有限公司 半导体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000188285A (ja) * 1998-10-13 2000-07-04 Sony Corp エッチング方法および結晶性評価方法並びに半導体装置の製造方法
JP2004289005A (ja) * 2003-03-24 2004-10-14 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
JP2006032911A (ja) * 2004-06-15 2006-02-02 Ngk Insulators Ltd 半導体積層構造、半導体素子およびｈｅｍｔ素子
JP2006179861A (ja) * 2004-11-26 2006-07-06 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007073873A (ja) * 2005-09-09 2007-03-22 Showa Denko Kk 半導体素子

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US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
US6829273B2 (en) * 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
JP4676046B2 (ja) * 2000-05-10 2011-04-27 古河電気工業株式会社 ＧａＮ系絶縁ゲート形電界効果トランジスタ
JP2002057158A (ja) 2000-08-09 2002-02-22 Sony Corp 絶縁性窒化物層及びその形成方法、半導体装置及びその製造方法
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
JP2005167275A (ja) * 2000-12-07 2005-06-23 Ngk Insulators Ltd 半導体素子
JP3836697B2 (ja) * 2000-12-07 2006-10-25 日本碍子株式会社 半導体素子
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US20030049916A1 (en) * 2001-08-20 2003-03-13 The Hong Kong Polytechnic University Development of an intermediate-temperature buffer layer for the growth of high-quality GaxInyAlzN epitaxial layers by molecular beam epitaxy
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JP4823466B2 (ja) * 2002-12-18 2011-11-24 日本碍子株式会社 エピタキシャル成長用基板および半導体素子
JP2005210084A (ja) * 2003-12-22 2005-08-04 Ngk Insulators Ltd エピタキシャル基板、半導体積層構造、転位低減方法およびエピタキシャル形成用基板
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JP2008205221A (ja) * 2007-02-20 2008-09-04 Furukawa Electric Co Ltd:The 半導体素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000188285A (ja) * 1998-10-13 2000-07-04 Sony Corp エッチング方法および結晶性評価方法並びに半導体装置の製造方法
JP2004289005A (ja) * 2003-03-24 2004-10-14 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
JP2006032911A (ja) * 2004-06-15 2006-02-02 Ngk Insulators Ltd 半導体積層構造、半導体素子およびｈｅｍｔ素子
JP2006179861A (ja) * 2004-11-26 2006-07-06 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007073873A (ja) * 2005-09-09 2007-03-22 Showa Denko Kk 半導体素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058561A1 (ja) * 2008-11-21 2010-05-27 パナソニック株式会社 電界効果トランジスタ
US20110278540A1 (en) * 2008-11-21 2011-11-17 Panasonic Corporation Field-effect transistor
US20100244097A1 (en) * 2009-03-26 2010-09-30 Furukawa Electric Co., Ltd. Field effect transistor
US8309988B2 (en) * 2009-03-26 2012-11-13 Furukawa Electric Co., Ltd Field effect transistor

Also Published As

Publication number Publication date
US20100032716A1 (en) 2010-02-11
JP2008205221A (ja) 2008-09-04
US8134181B2 (en) 2012-03-13

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