WO2008114336A1 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
WO2008114336A1
WO2008114336A1 PCT/JP2007/053198 JP2007053198W WO2008114336A1 WO 2008114336 A1 WO2008114336 A1 WO 2008114336A1 JP 2007053198 W JP2007053198 W JP 2007053198W WO 2008114336 A1 WO2008114336 A1 WO 2008114336A1
Authority
WO
WIPO (PCT)
Prior art keywords
buffer layer
layer
value
volume resistivity
dislocation density
Prior art date
Application number
PCT/JP2007/053198
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Sato
Sadahiro Kato
Seikoh Yoshida
Original Assignee
The Furukawa Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Furukawa Electric Co., Ltd. filed Critical The Furukawa Electric Co., Ltd.
Publication of WO2008114336A1 publication Critical patent/WO2008114336A1/ja
Priority to US12/539,736 priority Critical patent/US8134181B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Abstract

　電流コラプスを悪化させることなくバッファ層を高抵抗化し、バッファ層中に発生するリーク電流を低減させること。ＨＥＭＴ１は、基板２上に、それぞれＧａＮ系化合物半導体からなる低温バッファ層３、バッファ層４、電子走行層５および電子供給層６を、この順に積層して有し、電子供給層６上には、ソース電極７Ｓ、ゲート電極７Ｇおよびドレイン電極７Ｄを備える。バッファ層４の転位密度は、転位密度に対する体積抵抗率が極大値近傍となる密度値を有する。また、バッファ層４の（１０２）面に対するＸ線ロッキングカーブの半値幅は、この半値幅に対する体積抵抗率が極大値近傍となる幅値を有する。
PCT/JP2007/053198 2007-02-20 2007-02-21 半導体素子 WO2008114336A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/539,736 US8134181B2 (en) 2007-02-20 2009-08-12 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007039956A JP2008205221A (ja) 2007-02-20 2007-02-20 半導体素子
JP2007-039956 2007-02-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/539,736 Continuation US8134181B2 (en) 2007-02-20 2009-08-12 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2008114336A1 true WO2008114336A1 (ja) 2008-09-25

Family

ID=39765456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053198 WO2008114336A1 (ja) 2007-02-20 2007-02-21 半導体素子

Country Status (3)

Country Link
US (1) US8134181B2 (ja)
JP (1) JP2008205221A (ja)
WO (1) WO2008114336A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058561A1 (ja) * 2008-11-21 2010-05-27 パナソニック株式会社 電界効果トランジスタ
US20100244097A1 (en) * 2009-03-26 2010-09-30 Furukawa Electric Co., Ltd. Field effect transistor

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205221A (ja) * 2007-02-20 2008-09-04 Furukawa Electric Co Ltd:The 半導体素子
JP5460087B2 (ja) * 2009-03-13 2014-04-02 古河電気工業株式会社 電界効果トランジスタ
JP5367429B2 (ja) * 2009-03-25 2013-12-11 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP5697012B2 (ja) * 2009-03-31 2015-04-08 古河電気工業株式会社 溝の形成方法、および電界効果トランジスタの製造方法
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices
JP5626010B2 (ja) * 2011-02-25 2014-11-19 富士通株式会社 半導体装置及びその製造方法、電源装置
JP2013207102A (ja) * 2012-03-28 2013-10-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP6050018B2 (ja) * 2012-04-04 2016-12-21 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2014072427A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
JP2015133354A (ja) * 2014-01-09 2015-07-23 日立金属株式会社 窒化物半導体エピタキシャルウェハ及び窒化物半導体デバイス
JP5907200B2 (ja) 2014-03-18 2016-04-26 セイコーエプソン株式会社 光検出ユニット及び生体情報検出装置
JP6893883B2 (ja) * 2015-01-09 2021-06-23 スウェガン、アクチボラグＳｗｅｇａｎ Ａｂ 半導体デバイス構造およびその製造方法
ITUB20155862A1 (it) * 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
US11522078B2 (en) * 2017-07-07 2022-12-06 Indian Institute Of Science High electron mobility transistor (HEMT) with RESURF junction
DE112018005908T5 (de) * 2017-11-20 2020-07-30 Rohm Co., Ltd. Halbleiterbauteil

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JP2004289005A (ja) * 2003-03-24 2004-10-14 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
JP2006032911A (ja) * 2004-06-15 2006-02-02 Ngk Insulators Ltd 半導体積層構造、半導体素子およびｈｅｍｔ素子
JP2006179861A (ja) * 2004-11-26 2006-07-06 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007073873A (ja) * 2005-09-09 2007-03-22 Showa Denko Kk 半導体素子

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JP2000188285A (ja) * 1998-10-13 2000-07-04 Sony Corp エッチング方法および結晶性評価方法並びに半導体装置の製造方法
JP2004289005A (ja) * 2003-03-24 2004-10-14 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
JP2006032911A (ja) * 2004-06-15 2006-02-02 Ngk Insulators Ltd 半導体積層構造、半導体素子およびｈｅｍｔ素子
JP2006179861A (ja) * 2004-11-26 2006-07-06 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007073873A (ja) * 2005-09-09 2007-03-22 Showa Denko Kk 半導体素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058561A1 (ja) * 2008-11-21 2010-05-27 パナソニック株式会社 電界効果トランジスタ
US20110278540A1 (en) * 2008-11-21 2011-11-17 Panasonic Corporation Field-effect transistor
US20100244097A1 (en) * 2009-03-26 2010-09-30 Furukawa Electric Co., Ltd. Field effect transistor
US8309988B2 (en) * 2009-03-26 2012-11-13 Furukawa Electric Co., Ltd Field effect transistor

Also Published As

Publication number Publication date
US20100032716A1 (en) 2010-02-11
US8134181B2 (en) 2012-03-13
JP2008205221A (ja) 2008-09-04

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