WO2008105223A1 - Bouillie de polissage chimico-mécanique pour un film de silicium - Google Patents

Bouillie de polissage chimico-mécanique pour un film de silicium Download PDF

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Publication number
WO2008105223A1
WO2008105223A1 PCT/JP2008/051876 JP2008051876W WO2008105223A1 WO 2008105223 A1 WO2008105223 A1 WO 2008105223A1 JP 2008051876 W JP2008051876 W JP 2008051876W WO 2008105223 A1 WO2008105223 A1 WO 2008105223A1
Authority
WO
WIPO (PCT)
Prior art keywords
slurry
cmp
silicon
silicon film
cmp slurry
Prior art date
Application number
PCT/JP2008/051876
Other languages
English (en)
Japanese (ja)
Inventor
Takenori Narita
Masaya Nishiyama
Toranosuke Ashizawa
Original Assignee
Hitachi Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co., Ltd. filed Critical Hitachi Chemical Co., Ltd.
Priority to JP2009501161A priority Critical patent/JP5397218B2/ja
Publication of WO2008105223A1 publication Critical patent/WO2008105223A1/fr
Priority to US12/547,802 priority patent/US20100001229A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une bouillie pour polissage chimico-mécanique (CMP) pour des films de silicium, et à l'aide d'une telle bouillie, des vitesses de polissage et des rapports de vitesses de polissage d'un film de silicium, d'un film de nitrure de silicium et d'un film d'oxyde de silicium requis pour effectuer un polissage chimico-mécanique sont obtenus. Dans le polissage chimico-mécanique, un type de bouillie est utilisé pour former un bouchon de contact par auto-alignement pour réduire un coût de fabrication d'élément semi-conducteur et améliorer le rendement. La bouillie contient des grains abrasifs, un agent tensioactif cationique et de l'eau et a une valeur de pH de 6,0-8,0.
PCT/JP2008/051876 2007-02-27 2008-02-05 Bouillie de polissage chimico-mécanique pour un film de silicium WO2008105223A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009501161A JP5397218B2 (ja) 2007-02-27 2008-02-05 シリコン膜用ｃｍｐスラリー
US12/547,802 US20100001229A1 (en) 2007-02-27 2009-08-26 Cmp slurry for silicon film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-047008 2007-02-27
JP2007047008 2007-02-27
JP2007-139482 2007-05-25
JP2007139482 2007-05-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/547,802 Continuation-In-Part US20100001229A1 (en) 2007-02-27 2009-08-26 Cmp slurry for silicon film

Publications (1)

Publication Number Publication Date
WO2008105223A1 true WO2008105223A1 (fr) 2008-09-04

Family

ID=39721061

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051876 WO2008105223A1 (fr) 2007-02-27 2008-02-05 Bouillie de polissage chimico-mécanique pour un film de silicium

Country Status (4)

Country Link
JP (1) JP5397218B2 (fr)
KR (1) KR20100014849A (fr)
TW (1) TW200849366A (fr)
WO (1) WO2008105223A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012094838A (ja) * 2010-09-22 2012-05-17 Rohm & Haas Electronic Materials Cmp Holdings Inc 調整可能な絶縁体研磨選択比を有するスラリー組成物及び基板研磨方法
WO2013108770A1 (fr) * 2012-01-16 2013-07-25 株式会社 フジミインコーポレーテッド Composition de polissage, son procédé de fabrication, liquide non dilué, procédé de fabrication d'un substrat de silicium, et substrat de silicium
WO2017047307A1 (fr) * 2015-09-15 2017-03-23 株式会社フジミインコーポレーテッド Composition de polissage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249600A (ja) * 1994-03-14 1995-09-26 Mitsubishi Materials Corp ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤
JP2002155268A (ja) * 2000-11-20 2002-05-28 Toshiba Corp 化学的機械的研磨用スラリ及び半導体装置の製造方法
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP2005236275A (ja) * 2004-01-23 2005-09-02 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230986B2 (ja) * 1995-11-13 2001-11-19 株式会社東芝 ポリッシング方法、半導体装置の製造方法及び半導体製造装置。
JP2001077060A (ja) * 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
JP2002114969A (ja) * 2000-10-04 2002-04-16 Toto Ltd 吸湿性複合材料用の研磨剤及び吸湿性複合材料の修復方法
JP2002190458A (ja) * 2000-12-21 2002-07-05 Jsr Corp 化学機械研磨用水系分散体
KR100416587B1 (ko) * 2000-12-22 2004-02-05 삼성전자주식회사 씨엠피 연마액
JP4187206B2 (ja) * 2002-10-04 2008-11-26 花王株式会社 研磨液組成物
JP2004247542A (ja) * 2003-02-14 2004-09-02 Kao Corp 精密部品用基板の製造方法
JP4637464B2 (ja) * 2003-07-01 2011-02-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2005064285A (ja) * 2003-08-14 2005-03-10 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249600A (ja) * 1994-03-14 1995-09-26 Mitsubishi Materials Corp ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤
JP2002155268A (ja) * 2000-11-20 2002-05-28 Toshiba Corp 化学的機械的研磨用スラリ及び半導体装置の製造方法
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP2005236275A (ja) * 2004-01-23 2005-09-02 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012094838A (ja) * 2010-09-22 2012-05-17 Rohm & Haas Electronic Materials Cmp Holdings Inc 調整可能な絶縁体研磨選択比を有するスラリー組成物及び基板研磨方法
WO2013108770A1 (fr) * 2012-01-16 2013-07-25 株式会社 フジミインコーポレーテッド Composition de polissage, son procédé de fabrication, liquide non dilué, procédé de fabrication d'un substrat de silicium, et substrat de silicium
WO2017047307A1 (fr) * 2015-09-15 2017-03-23 株式会社フジミインコーポレーテッド Composition de polissage
JP2017057263A (ja) * 2015-09-15 2017-03-23 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
KR20100014849A (ko) 2010-02-11
TW200849366A (en) 2008-12-16
JPWO2008105223A1 (ja) 2010-06-03
JP5397218B2 (ja) 2014-01-22

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