WO2008105223A1 - Cmp slurry for silicon film - Google Patents

Cmp slurry for silicon film Download PDF

Info

Publication number
WO2008105223A1
WO2008105223A1 PCT/JP2008/051876 JP2008051876W WO2008105223A1 WO 2008105223 A1 WO2008105223 A1 WO 2008105223A1 JP 2008051876 W JP2008051876 W JP 2008051876W WO 2008105223 A1 WO2008105223 A1 WO 2008105223A1
Authority
WO
WIPO (PCT)
Prior art keywords
slurry
cmp
silicon
silicon film
cmp slurry
Prior art date
Application number
PCT/JP2008/051876
Other languages
French (fr)
Japanese (ja)
Inventor
Takenori Narita
Masaya Nishiyama
Toranosuke Ashizawa
Original Assignee
Hitachi Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co., Ltd. filed Critical Hitachi Chemical Co., Ltd.
Priority to JP2009501161A priority Critical patent/JP5397218B2/en
Publication of WO2008105223A1 publication Critical patent/WO2008105223A1/en
Priority to US12/547,802 priority patent/US20100001229A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Provided is a CMP slurry for silicon films, and by using such slurry, polishing speeds and polishing speed ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, one type of slurry is used for forming a contact plug by self-alignment to reduce semiconductor element manufacturing cost and improve yield. The slurry contains abrasive grains, a cationic surfactant and water and has a pH value of 6.0-8.0.
PCT/JP2008/051876 2007-02-27 2008-02-05 Cmp slurry for silicon film WO2008105223A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009501161A JP5397218B2 (en) 2007-02-27 2008-02-05 CMP slurry for silicon film
US12/547,802 US20100001229A1 (en) 2007-02-27 2009-08-26 Cmp slurry for silicon film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-047008 2007-02-27
JP2007047008 2007-02-27
JP2007139482 2007-05-25
JP2007-139482 2007-05-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/547,802 Continuation-In-Part US20100001229A1 (en) 2007-02-27 2009-08-26 Cmp slurry for silicon film

Publications (1)

Publication Number Publication Date
WO2008105223A1 true WO2008105223A1 (en) 2008-09-04

Family

ID=39721061

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051876 WO2008105223A1 (en) 2007-02-27 2008-02-05 Cmp slurry for silicon film

Country Status (4)

Country Link
JP (1) JP5397218B2 (en)
KR (1) KR20100014849A (en)
TW (1) TW200849366A (en)
WO (1) WO2008105223A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012094838A (en) * 2010-09-22 2012-05-17 Rohm & Haas Electronic Materials Cmp Holdings Inc Slurry composition having adjustable polishing selection ratio of insulator and method for polishing substrate
WO2013108770A1 (en) * 2012-01-16 2013-07-25 株式会社 フジミインコーポレーテッド Polishing composition, manufacturing process therefor, undiluted liquid, process for producing silicon substrate, and silicon substrate
JP2017057263A (en) * 2015-09-15 2017-03-23 株式会社フジミインコーポレーテッド Polishing composition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249600A (en) * 1994-03-14 1995-09-26 Mitsubishi Materials Corp Method for polishing polysilicon film and abrasive for polysilicon film
JP2002155268A (en) * 2000-11-20 2002-05-28 Toshiba Corp Slurry for chemical and mechanical polishing and method for producing semiconductor device
JP2004266155A (en) * 2003-03-03 2004-09-24 Jsr Corp Water dispersed element for chemical mechanical polishing and chemical mechanical polishing method using the same and method for manufacturing semiconductor device
JP2005236275A (en) * 2004-01-23 2005-09-02 Jsr Corp Water disperse form for chemical mechanical polishing and chemical mechanical polishing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230986B2 (en) * 1995-11-13 2001-11-19 株式会社東芝 Polishing method, semiconductor device manufacturing method, and semiconductor manufacturing apparatus.
JP2001077060A (en) * 1999-09-08 2001-03-23 Toshiba Corp Manufacture of semiconductor device
JP2002114969A (en) * 2000-10-04 2002-04-16 Toto Ltd Abrasive for moisture absorptive composite material and repair method of moisture absorptive composite material
JP2002190458A (en) * 2000-12-21 2002-07-05 Jsr Corp Water dispersion for chemical mechanical polishing
KR100416587B1 (en) * 2000-12-22 2004-02-05 삼성전자주식회사 Chemical mechanical polishing slurry
JP4187206B2 (en) * 2002-10-04 2008-11-26 花王株式会社 Polishing liquid composition
JP2004247542A (en) * 2003-02-14 2004-09-02 Kao Corp Method for manufacturing substrate for precision component
JP4637464B2 (en) * 2003-07-01 2011-02-23 Ｊｓｒ株式会社 Aqueous dispersion for chemical mechanical polishing
JP2005064285A (en) * 2003-08-14 2005-03-10 Hitachi Chem Co Ltd Polishing solution and polishing method for cmp

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249600A (en) * 1994-03-14 1995-09-26 Mitsubishi Materials Corp Method for polishing polysilicon film and abrasive for polysilicon film
JP2002155268A (en) * 2000-11-20 2002-05-28 Toshiba Corp Slurry for chemical and mechanical polishing and method for producing semiconductor device
JP2004266155A (en) * 2003-03-03 2004-09-24 Jsr Corp Water dispersed element for chemical mechanical polishing and chemical mechanical polishing method using the same and method for manufacturing semiconductor device
JP2005236275A (en) * 2004-01-23 2005-09-02 Jsr Corp Water disperse form for chemical mechanical polishing and chemical mechanical polishing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012094838A (en) * 2010-09-22 2012-05-17 Rohm & Haas Electronic Materials Cmp Holdings Inc Slurry composition having adjustable polishing selection ratio of insulator and method for polishing substrate
WO2013108770A1 (en) * 2012-01-16 2013-07-25 株式会社 フジミインコーポレーテッド Polishing composition, manufacturing process therefor, undiluted liquid, process for producing silicon substrate, and silicon substrate
JP2017057263A (en) * 2015-09-15 2017-03-23 株式会社フジミインコーポレーテッド Polishing composition
WO2017047307A1 (en) * 2015-09-15 2017-03-23 株式会社フジミインコーポレーテッド Polishing composition

Also Published As

Publication number Publication date
JPWO2008105223A1 (en) 2010-06-03
KR20100014849A (en) 2010-02-11
JP5397218B2 (en) 2014-01-22
TW200849366A (en) 2008-12-16

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