WO2008099687A1 - 太陽電池用ガラス基板 - Google Patents

太陽電池用ガラス基板 Download PDF

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Publication number
WO2008099687A1
WO2008099687A1 PCT/JP2008/051589 JP2008051589W WO2008099687A1 WO 2008099687 A1 WO2008099687 A1 WO 2008099687A1 JP 2008051589 W JP2008051589 W JP 2008051589W WO 2008099687 A1 WO2008099687 A1 WO 2008099687A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar battery
glass substrate
sno2
mass
glass
Prior art date
Application number
PCT/JP2008/051589
Other languages
English (en)
French (fr)
Inventor
Takashi Murata
Original Assignee
Nippon Electric Glass Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co., Ltd. filed Critical Nippon Electric Glass Co., Ltd.
Priority to EP08710687.8A priority Critical patent/EP2119681B1/en
Publication of WO2008099687A1 publication Critical patent/WO2008099687A1/ja
Priority to US12/458,363 priority patent/US8497220B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/0092—Compositions for glass with special properties for glass with improved high visible transmittance, e.g. extra-clear glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)

Abstract

【課題】ガラスの耐失透性と高い透過率を維持しながらも、ソラリゼーションが抑制され、且つ高い耐熱性を有する太陽電池用ガラス基板を得ること。 【解決手段】本発明の太陽電池用ガラス基板は、質量％で、ガラス組成として、ＳｉＯ２　５０～８０％、Ａｌ２Ｏ３　５～２０％、Ｂ２Ｏ３　５～２０％、ＭｇＯ　０～２０％、ＣａＯ　０～２０％、ＳｒＯ　０～２０％、ＢａＯ　０～２０％、ＳｎＯ２　０．００１～２％を含有し、且つ質量比ＳｎＯ２／（Ｆｅ２Ｏ３＋ＳｎＯ２）が０．９以上であり、紫外線照射前後で波長４００ｎｍにおける透過率差が２％以下であることを特徴とする。
PCT/JP2008/051589 2007-02-16 2008-01-31 太陽電池用ガラス基板 WO2008099687A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08710687.8A EP2119681B1 (en) 2007-02-16 2008-01-31 Glass substrate for solar battery
US12/458,363 US8497220B2 (en) 2007-02-16 2009-07-09 Glass substrate for solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007035723 2007-02-16
JP2007-035723 2007-02-16
JP2008-005159 2008-01-15
JP2008005159A JP5808069B2 (ja) 2007-02-16 2008-01-15 太陽電池用ガラス基板

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/458,363 Continuation-In-Part US8497220B2 (en) 2007-02-16 2009-07-09 Glass substrate for solar cell

Publications (1)

Publication Number Publication Date
WO2008099687A1 true WO2008099687A1 (ja) 2008-08-21

Family

ID=39689932

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051589 WO2008099687A1 (ja) 2007-02-16 2008-01-31 太陽電池用ガラス基板

Country Status (4)

Country Link
US (1) US8497220B2 (ja)
EP (1) EP2119681B1 (ja)
JP (1) JP5808069B2 (ja)
WO (1) WO2008099687A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084016A1 (en) * 2008-10-06 2010-04-08 Bruce Gardiner Aitken Intermediate Thermal Expansion Coefficient Glass
JP2010143790A (ja) * 2008-12-19 2010-07-01 Nippon Electric Glass Co Ltd 太陽電池用ガラス基板の製造方法
WO2011062130A1 (ja) * 2009-11-20 2011-05-26 株式会社カネカ 薄膜光電変換装置および薄膜光電変換装置の製造方法
US20120118384A1 (en) * 2009-06-23 2012-05-17 Showa Shell Sekiyu K.K. Cis-based thin film solar cell
US20130005560A1 (en) * 2009-10-28 2013-01-03 Abengoa Solar New Technologies, S.A. Novel glass compositions and method for producing a glass/metal join
CN102951841A (zh) * 2011-08-23 2013-03-06 扬州通和玻璃有限公司 一种太阳能光伏电池用高硼硅玻璃的制备方法
US20160163899A1 (en) * 2009-05-29 2016-06-09 Corsam Technologies Llc Fusion formable sodium free glass
WO2017038621A1 (ja) * 2015-08-31 2017-03-09 旭硝子株式会社 Ｕｖ耐性を有するガラス板

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CN102113133B (zh) * 2008-05-30 2014-06-11 康宁股份有限公司 光伏玻璃叠层制品和层状制品
US8975199B2 (en) 2011-08-12 2015-03-10 Corsam Technologies Llc Fusion formable alkali-free intermediate thermal expansion coefficient glass
WO2010050591A1 (ja) * 2008-10-31 2010-05-06 旭硝子株式会社 太陽電池
IL204034A (en) * 2009-02-24 2015-05-31 Schott Ag Photovoltaic device with central optics
CN102448901B (zh) * 2009-03-19 2015-11-25 日本电气硝子株式会社 无碱玻璃
US8647995B2 (en) * 2009-07-24 2014-02-11 Corsam Technologies Llc Fusion formable silica and sodium containing glasses
JP2011088794A (ja) * 2009-10-26 2011-05-06 Nippon Electric Glass Co Ltd 太陽電池用ガラス板
US20110271717A1 (en) * 2010-05-06 2011-11-10 Cardinal Fg Company System and method for control of glass transmittance
US8598056B2 (en) * 2010-10-06 2013-12-03 Corning Incorporated Alkali-free glass compositions having high thermal and chemical stability
WO2013005401A1 (ja) * 2011-07-01 2013-01-10 ＡｖａｎＳｔｒａｔｅ株式会社 フラットパネルディスプレイ用ガラス基板およびその製造方法
JP5172045B2 (ja) * 2011-07-01 2013-03-27 ＡｖａｎＳｔｒａｔｅ株式会社 フラットパネルディスプレイ用ガラス基板及びその製造方法
KR101409707B1 (ko) * 2011-07-01 2014-06-19 아반스트레이트 가부시키가이샤 평판 디스플레이용 유리 기판 및 그의 제조 방법
EP2740160B1 (en) * 2011-08-04 2020-01-08 Corning Incorporated Photovoltaic module package
US10347782B2 (en) 2011-08-04 2019-07-09 Corning Incorporated Photovoltaic module package
KR20190133065A (ko) 2011-09-09 2019-11-29 피피지 인더스트리즈 오하이오 인코포레이티드 유리 조성물 및 이로부터 제조된 섬유
BR112014009921B1 (pt) 2011-10-25 2020-12-29 Corning Incorporated composições de vidro com uma melhor durabilidade química e mecânica
RU2691186C2 (ru) 2011-10-25 2019-06-11 Корнинг Инкорпорейтед Щелочноземельные алюмосиликатные стеклянные композиции с улучшенной химической и механической стойкостью
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JP6365826B2 (ja) * 2013-07-11 2018-08-01 日本電気硝子株式会社 ガラス
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