WO2008093477A1 - Ｒｆ増幅装置 - Google Patents

Ｒｆ増幅装置 Download PDF

Info

Publication number
WO2008093477A1
WO2008093477A1 PCT/JP2007/074387 JP2007074387W WO2008093477A1 WO 2008093477 A1 WO2008093477 A1 WO 2008093477A1 JP 2007074387 W JP2007074387 W JP 2007074387W WO 2008093477 A1 WO2008093477 A1 WO 2008093477A1
Authority
WO
WIPO (PCT)
Prior art keywords
output
line
input
contact point
amplification
Prior art date
Application number
PCT/JP2007/074387
Other languages
English (en)
French (fr)
Inventor
Masami Ohnishi
Satoshi Tanaka
Ryouichi Tanaka
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Priority to US12/524,970 priority Critical patent/US7928802B2/en
Priority to CN2007800506736A priority patent/CN101595636B/zh
Priority to EP07850860A priority patent/EP2131492B1/en
Priority to JP2008556018A priority patent/JP4896996B2/ja
Publication of WO2008093477A1 publication Critical patent/WO2008093477A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/537—A transformer being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

　無線通信の無線周波数入力信号Ｐｉｎ＿ＬＢを増幅する増幅素子Ｑ１１、Ｑ１２と、増幅素子の入力電極と出力電極との一方に接続された伝送線路変圧器ＴＬＴ１１、１２とを含む。ＴＬＴ１１、１２は、入力と出力との間に配置された主線路Ｌｏｕｔと、入力と出力とのいずれか一方と交流接地点との間に配置され主線路Ｌｏｕｔと結合された副線路Ｌｉｎとを含む。交流接地点に接地電圧レベルＧＮＤと異なる動作電圧Ｖｄｄが印加されることにより、交流接地点から副線路Ｌｉｎを介して増幅素子Ｑ１１、Ｑ１２の出力電極に動作電圧Ｖｄｄが供給される。ＲＦ増幅装置において高性能の負荷回路を実現する際にＲＦモジュールのモジュール高さの増大を回避するとともに半導体チップもしくは多層配線回路基板で構成される高周波増幅器の負荷回路の占有面積の増大を回避することができる。
PCT/JP2007/074387 2007-01-30 2007-12-19 Ｒｆ増幅装置 WO2008093477A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/524,970 US7928802B2 (en) 2007-01-30 2007-12-19 RF amplification device
CN2007800506736A CN101595636B (zh) 2007-01-30 2007-12-19 Rf放大装置
EP07850860A EP2131492B1 (en) 2007-01-30 2007-12-19 Rf amplification device
JP2008556018A JP4896996B2 (ja) 2007-01-30 2007-12-19 Ｒｆ増幅装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-019129 2007-01-30
JP2007019129 2007-01-30

Publications (1)

Publication Number Publication Date
WO2008093477A1 true WO2008093477A1 (ja) 2008-08-07

Family

ID=39673793

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074387 WO2008093477A1 (ja) 2007-01-30 2007-12-19 Ｒｆ増幅装置

Country Status (5)

Country Link
US (1) US7928802B2 (ja)
EP (1) EP2131492B1 (ja)
JP (1) JP4896996B2 (ja)
CN (1) CN101595636B (ja)
WO (1) WO2008093477A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203858A1 (ja) * 2022-04-22 2023-10-26 株式会社村田製作所 高周波回路および通信装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8175556B2 (en) * 2009-12-09 2012-05-08 Apple Inc. Methods for optimizing power amplifier settings for operation at different radio-frequency bands
US8427257B2 (en) * 2011-02-11 2013-04-23 M/A-Com Technology Solutions Holdings, Inc. Broadside-coupled transformers with improved bandwidth
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
KR20190058711A (ko) 2012-06-14 2019-05-29 스카이워크스 솔루션즈, 인코포레이티드 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법
US8760134B2 (en) * 2012-08-01 2014-06-24 Fairchild Semiconductor Corporation Simulating power supply inductor current
US9130535B2 (en) 2012-12-20 2015-09-08 Qualcomm Incorporated Driver amplifier with asymmetrical T-coil matching network
WO2014207499A1 (en) * 2013-06-27 2014-12-31 Freescale Semiconductor, Inc. Integrated matching circuit for a high frequency amplifier
CN105706223B (zh) * 2013-11-07 2019-02-12 恩智浦美国有限公司 键合线布置的可调损耗
US9537452B2 (en) * 2014-04-29 2017-01-03 Skyworks Solutions, Inc. Broadband power amplifier systems and methods
US9431963B2 (en) 2014-09-19 2016-08-30 Qualcomm Incorporated Dual stage low noise amplifier for multiband receiver
CN105337581B (zh) * 2015-05-21 2018-12-04 络达科技股份有限公司 一种提高功率放大电路稳定性的方法
CN104935287B (zh) * 2015-06-26 2018-01-30 英特尔公司 射频接收器及其电感耦合单端输入差分输出低噪声放大器
US11148886B2 (en) 2015-07-24 2021-10-19 Eidon, Llc System and method for peristaltic transport of material
US10091606B2 (en) * 2015-11-18 2018-10-02 Honeywell International Inc. System and method of enrolling sensors with a control panel using a mobile device
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
CN113037223B (zh) * 2021-03-31 2023-01-24 广东工业大学 一种具有二次谐波抑制的宽带差分射频功率放大器
CN114844477B (zh) * 2022-03-31 2023-07-14 电子科技大学 一种三频带微带功率放大器
CN114785286B (zh) * 2022-04-28 2023-11-28 电子科技大学 一种超宽带的无源下变频混频器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888523A (ja) * 1994-09-16 1996-04-02 Hitachi Ltd 分布定数線路型電力増幅器
JPH1141042A (ja) * 1997-07-17 1999-02-12 Mitsubishi Electric Corp マイクロ波増幅器
JP2000244264A (ja) * 1999-02-24 2000-09-08 Hitachi Ltd 高周波電力増幅装置
JP2001007657A (ja) * 1999-04-21 2001-01-12 Hitachi Ltd 高周波電力増幅装置および無線通信機
JP2001217659A (ja) * 2000-02-03 2001-08-10 Mitsubishi Electric Corp マイクロ波増幅器
JP2007006450A (ja) * 2005-05-23 2007-01-11 Hitachi Kokusai Electric Inc 増幅装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2558997B1 (fr) * 1984-01-31 1989-02-03 Thomson Csf Amplificateur correcteur du temps de propagation de groupe de signaux electriques et chaine d'amplification a frequence intermediaire de faisceaux hertziens comportant un tel amplificateur
JPS60235513A (ja) * 1984-05-08 1985-11-22 Nec Corp 増幅回路
CN2091044U (zh) * 1990-11-02 1991-12-18 梁文华 一种专用发射机
JPH06260864A (ja) * 1993-03-08 1994-09-16 Matsushita Electric Ind Co Ltd 送信出力増幅器
JPH0878994A (ja) * 1994-08-30 1996-03-22 Daihen Corp インピ−ダンス整合回路
US6463267B1 (en) 1999-04-21 2002-10-08 Hitachi, Ltd. High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages
US7092691B2 (en) 2001-03-09 2006-08-15 California Insitute Of Technology Switchless multi-resonant, multi-band power amplifier
US20020146993A1 (en) * 2001-04-04 2002-10-10 Charles Persico Bias adjustment for power amplifier
JP4075438B2 (ja) * 2002-04-08 2008-04-16 日本電気株式会社 信号増幅器および集積回路
JP4047640B2 (ja) * 2002-06-25 2008-02-13 京セラ株式会社 多層回路基板
TW200518345A (en) * 2003-08-08 2005-06-01 Renesas Tech Corp Semiconductor device
EP1612932A1 (en) 2004-06-23 2006-01-04 Wavics, Inc. Multiple power mode amplifier with bias modulation option and without bypass switches
JP4485487B2 (ja) * 2006-05-11 2010-06-23 シャープ株式会社 電力増幅器
TWI344263B (en) * 2008-01-25 2011-06-21 Univ Nat Taiwan Low-noise amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888523A (ja) * 1994-09-16 1996-04-02 Hitachi Ltd 分布定数線路型電力増幅器
JPH1141042A (ja) * 1997-07-17 1999-02-12 Mitsubishi Electric Corp マイクロ波増幅器
JP2000244264A (ja) * 1999-02-24 2000-09-08 Hitachi Ltd 高周波電力増幅装置
JP2001007657A (ja) * 1999-04-21 2001-01-12 Hitachi Ltd 高周波電力増幅装置および無線通信機
JP2001217659A (ja) * 2000-02-03 2001-08-10 Mitsubishi Electric Corp マイクロ波増幅器
JP2007006450A (ja) * 2005-05-23 2007-01-11 Hitachi Kokusai Electric Inc 増幅装置

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
BILL TOOLE ET AL.: "A Low Voltage, Low Power RF CMOS LNA for Bluetooth Applications using Transmission Line Transformers", PROCEEDINGS OF THE 27TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 18 September 2001 (2001-09-18), pages 433 - 436
BRETT E. KLEHN ET AL.: "AN EXACT ANALYSIS OF CLASS-E POWER AMPLIFIERS FOR RF COMMUNICATIONS", PROCEEDINGS OF THE 2004 INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, 2004, pages 277 - 280, XP010719789
INDER J. BAHL: "Broadband and Compact Impedance Transformers for Microwave Circuits", IEEE MICROWAVE MAGAZINE, August 2006 (2006-08-01), pages 56 - 62
J. HORN ET AL.: "Integrated Transmission Line Transformer", IEEE MTT-S DIGEST, 2004, pages 201 - 204, XP010727263, DOI: doi:10.1109/MWSYM.2004.1335844
OCTAVIUS PITZALIS ET AL.: "Broadband 60-W HF Linear Amplifier", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. SC-6, no. 3, June 1971 (1971-06-01), pages 93 - 103
See also references of EP2131492A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203858A1 (ja) * 2022-04-22 2023-10-26 株式会社村田製作所 高周波回路および通信装置

Also Published As

Publication number Publication date
JPWO2008093477A1 (ja) 2010-05-20
EP2131492A4 (en) 2010-04-14
US20100090767A1 (en) 2010-04-15
EP2131492B1 (en) 2012-07-18
US7928802B2 (en) 2011-04-19
CN101595636B (zh) 2012-10-31
EP2131492A1 (en) 2009-12-09
JP4896996B2 (ja) 2012-03-14
CN101595636A (zh) 2009-12-02

Similar Documents

Publication Publication Date Title
WO2008093477A1 (ja) Ｒｆ増幅装置
US8838042B2 (en) RF front-end with integrated T/R switch
US10224876B2 (en) Low dropout voltage regulator for highly linear radio frequency power amplifiers
CN110785927B (zh) 效率提高的对称多尔蒂功率放大器
Jeon et al. A triple-mode balanced linear CMOS power amplifier using a switched-quadrature coupler
JP2004328555A (ja) 高周波電力増幅用電子部品および無線通信システム
JP2005318093A (ja) 高周波スイッチ回路
US8912865B2 (en) Power combiner, power amplifying module having the same, and signal transceiving module
JPWO2004023649A1 (ja) 高周波電力増幅用電子部品および無線通信システム
US8472894B2 (en) Signal transmitting/receiving circuit including an impedance matching circuit
US9979360B1 (en) Multi baseband termination components for RF power amplifier with enhanced video bandwidth
JP2004281625A (ja) 半導体装置
US8559620B2 (en) Communications circuit for reducing crosstalk
US7064612B2 (en) High frequency power amplification electric part and wireless communication system
US10491172B2 (en) Systems and methods providing a matching circuit that bypasses a parasitic impedance
KR101452063B1 (ko) 프론트 엔드 모듈
KR100882131B1 (ko) 집적형 수동 소자
US10756727B2 (en) Switching circuit and high-frequency module
CN215528966U (zh) 一种基于GaAs衬底的低功耗50~4000MHz低噪放芯片
US10404312B2 (en) Signal processing apparatus
WO2021220772A1 (ja) 電力増幅装置
JP2005184631A (ja) 高周波電力増幅用電子部品
CN1774858B (zh) 改善隔离的双波段功率放大器
JP2005223473A (ja) 高周波電力増幅モジュール、半導体集積回路装置、およびその製造方法
US11984413B2 (en) High-frequency power transistor and high-frequency power amplifier

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780050673.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07850860

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2008556018

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2007850860

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12524970

Country of ref document: US