WO2008090864A1 - シリコン基板の製造装置、製造方法及びシリコン基板 - Google Patents

シリコン基板の製造装置、製造方法及びシリコン基板 Download PDF

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Publication number
WO2008090864A1
WO2008090864A1 PCT/JP2008/050762 JP2008050762W WO2008090864A1 WO 2008090864 A1 WO2008090864 A1 WO 2008090864A1 JP 2008050762 W JP2008050762 W JP 2008050762W WO 2008090864 A1 WO2008090864 A1 WO 2008090864A1
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WO
WIPO (PCT)
Prior art keywords
silicon
gas
forming
ribbon
silicon substrate
Prior art date
Application number
PCT/JP2008/050762
Other languages
English (en)
French (fr)
Inventor
Gen Kojima
Hiroshi Yokoyama
Yutaka Hayashi
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to JP2008555060A priority Critical patent/JP5062767B2/ja
Priority to EP08703609.1A priority patent/EP2128088B1/en
Priority to US12/524,438 priority patent/US20100086465A1/en
Priority to CN2008800030813A priority patent/CN101616868B/zh
Publication of WO2008090864A1 publication Critical patent/WO2008090864A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

　好ましくない不純物混入や欠陥の少ない、平坦な、大面積の多結晶薄板状シリコン基板並びに表面酸化物被膜等を有する複合シリコン基板を効率的に生産する製造装置、製造方法および製品を実現する。 　溶融シリコンから不活性な気体雰囲気下においてシリコンリボン１２を製造する成形ゾーンにおいて、坩堝炉から溶融シリコン２が、該熔融シリコンを成形に適した状態に調整する回転ロール３を介して、供給される基材１１から成る成形用ベルトコンベア（成形ベッド）５が配置され、基材１１は、溶融シリコン２から成形されてゆく成形シリコンリボン４に対して、その下方からそれぞれ気体を噴出し、排出する複数の気体噴出孔及び気体排出孔を有しており、これらの噴出される気体と排出される気体の両者の動的圧力均衡状態によって気体上に成形シリコンリボン４を安定して保持しつつ、シリコン表面に気体中に含まれる反応性物質等によって被膜を形成させながら成形シリコンリボン４の面と平行方向に引っ張り応力をかけ、シリコンリボン１２を成形する。
PCT/JP2008/050762 2007-01-25 2008-01-22 シリコン基板の製造装置、製造方法及びシリコン基板 WO2008090864A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008555060A JP5062767B2 (ja) 2007-01-25 2008-01-22 シリコン基板の製造装置及び製造方法
EP08703609.1A EP2128088B1 (en) 2007-01-25 2008-01-22 Apparatus and method for manufacturing silicon substrate
US12/524,438 US20100086465A1 (en) 2007-01-25 2008-01-22 Apparatus and method for manufacturing silicon substrate, and silicon substrate
CN2008800030813A CN101616868B (zh) 2007-01-25 2008-01-22 硅基板的制造装置、制造方法及硅基板

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007014629 2007-01-25
JP2007-014629 2007-01-25

Publications (1)

Publication Number Publication Date
WO2008090864A1 true WO2008090864A1 (ja) 2008-07-31

Family

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PCT/JP2008/050762 WO2008090864A1 (ja) 2007-01-25 2008-01-22 シリコン基板の製造装置、製造方法及びシリコン基板

Country Status (5)

Country Link
US (1) US20100086465A1 (ja)
EP (1) EP2128088B1 (ja)
JP (1) JP5062767B2 (ja)
CN (1) CN101616868B (ja)
WO (1) WO2008090864A1 (ja)

Cited By (1)

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EP2406413A1 (en) * 2009-03-09 2012-01-18 1366 Technologies Inc. Methods and apparati for making thin semiconductor bodies from molten material

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NL2004209C2 (en) * 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing
US9096946B2 (en) * 2011-05-12 2015-08-04 Korea Institute Of Energy Research Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same
US20120329203A1 (en) * 2011-06-22 2012-12-27 Liang-Tung Chang Method for Forming Silicon Thin Film
US20130333445A1 (en) * 2012-06-04 2013-12-19 Eif - Astute Analyzer for fluids containing an inflammable substance and corresponding method
CN102747419A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 一种多晶硅片生产装置及生产方法
CN102732950B (zh) * 2012-06-20 2015-04-15 常州天合光能有限公司 一种连续生长准单晶晶体的装置
US20140097432A1 (en) * 2012-10-09 2014-04-10 Corning Incorporated Sheet of semiconducting material, laminate, and system and methods for forming same
US9957636B2 (en) 2014-03-27 2018-05-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet
US11510290B2 (en) * 2014-05-16 2022-11-22 Illinois Tool Works Inc. Induction heating system
CN104496481B (zh) * 2015-01-06 2016-08-10 厦门大学 加宽型自支撑硅氧碳薄膜制备装置及制备方法
CN106119955A (zh) * 2016-08-01 2016-11-16 镇江大成新能源有限公司 一种硅片生产系统
CN113224180A (zh) * 2021-04-28 2021-08-06 宜兴市昱元能源装备技术开发有限公司 一种电池片制备方法

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Publication number Priority date Publication date Assignee Title
EP2406413A1 (en) * 2009-03-09 2012-01-18 1366 Technologies Inc. Methods and apparati for making thin semiconductor bodies from molten material
CN102421947A (zh) * 2009-03-09 2012-04-18 1366科技公司 从已熔化材料制造薄半导体本体的方法和装置
EP2406413A4 (en) * 2009-03-09 2014-01-01 1366 Tech Inc METHOD AND DEVICES FOR PRODUCING THIN SEMICONDUCTOR BODIES OF MELTED MATERIAL
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Also Published As

Publication number Publication date
CN101616868A (zh) 2009-12-30
EP2128088A4 (en) 2012-03-07
US20100086465A1 (en) 2010-04-08
JPWO2008090864A1 (ja) 2010-05-20
EP2128088B1 (en) 2013-05-29
JP5062767B2 (ja) 2012-10-31
EP2128088A1 (en) 2009-12-02
CN101616868B (zh) 2013-07-03

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