CN101616868A - 硅基板的制造装置、制造方法及硅基板 - Google Patents
硅基板的制造装置、制造方法及硅基板 Download PDFInfo
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- CN101616868A CN101616868A CN200880003081A CN200880003081A CN101616868A CN 101616868 A CN101616868 A CN 101616868A CN 200880003081 A CN200880003081 A CN 200880003081A CN 200880003081 A CN200880003081 A CN 200880003081A CN 101616868 A CN101616868 A CN 101616868A
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- Prior art keywords
- silicon
- gas
- mentioned
- molten
- moulded head
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 426
- 239000010703 silicon Substances 0.000 title claims abstract description 426
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 414
- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 238000009434 installation Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 120
- 238000000465 moulding Methods 0.000 claims abstract description 32
- 239000012298 atmosphere Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 205
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 54
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 150000003376 silicon Chemical class 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
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- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
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- 241000282472 Canis lupus familiaris Species 0.000 description 5
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- 210000005239 tubule Anatomy 0.000 description 2
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 241001012508 Carpiodes cyprinus Species 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 239000005357 flat glass Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
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- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007014629 | 2007-01-25 | ||
JP014629/2007 | 2007-01-25 | ||
PCT/JP2008/050762 WO2008090864A1 (ja) | 2007-01-25 | 2008-01-22 | シリコン基板の製造装置、製造方法及びシリコン基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101616868A true CN101616868A (zh) | 2009-12-30 |
CN101616868B CN101616868B (zh) | 2013-07-03 |
Family
ID=39644440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800030813A Expired - Fee Related CN101616868B (zh) | 2007-01-25 | 2008-01-22 | 硅基板的制造装置、制造方法及硅基板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100086465A1 (zh) |
EP (1) | EP2128088B1 (zh) |
JP (1) | JP5062767B2 (zh) |
CN (1) | CN101616868B (zh) |
WO (1) | WO2008090864A1 (zh) |
Cited By (5)
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CN102732950A (zh) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | 一种连续生长准单晶晶体的装置 |
CN102747419A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 一种多晶硅片生产装置及生产方法 |
CN102834553A (zh) * | 2010-02-08 | 2012-12-19 | Rgs发展有限公司 | 用于生产半导体材料箔的装置和方法 |
CN102842487A (zh) * | 2011-06-22 | 2012-12-26 | 张良冬 | 形成pn、pin、n-型和p-型半导体薄膜的方法 |
CN106119955A (zh) * | 2016-08-01 | 2016-11-16 | 镇江大成新能源有限公司 | 一种硅片生产系统 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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SG173739A1 (en) * | 2009-03-09 | 2011-09-29 | 1366 Tech Inc | Methods and apparati for making thin semiconductor bodies from molten material |
US20110303290A1 (en) * | 2010-06-14 | 2011-12-15 | Korea Institute Of Energy Research | Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing |
US9096946B2 (en) * | 2011-05-12 | 2015-08-04 | Korea Institute Of Energy Research | Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same |
US20130333445A1 (en) * | 2012-06-04 | 2013-12-19 | Eif - Astute | Analyzer for fluids containing an inflammable substance and corresponding method |
US20140097432A1 (en) * | 2012-10-09 | 2014-04-10 | Corning Incorporated | Sheet of semiconducting material, laminate, and system and methods for forming same |
US9957636B2 (en) * | 2014-03-27 | 2018-05-01 | Varian Semiconductor Equipment Associates, Inc. | System and method for crystalline sheet growth using a cold block and gas jet |
US11510290B2 (en) * | 2014-05-16 | 2022-11-22 | Illinois Tool Works Inc. | Induction heating system |
CN104496481B (zh) * | 2015-01-06 | 2016-08-10 | 厦门大学 | 加宽型自支撑硅氧碳薄膜制备装置及制备方法 |
CN113224180A (zh) * | 2021-04-28 | 2021-08-06 | 宜兴市昱元能源装备技术开发有限公司 | 一种电池片制备方法 |
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DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
DE2850790A1 (de) * | 1978-11-23 | 1980-06-12 | Siemens Ag | Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen |
FR2509637A1 (fr) * | 1981-07-17 | 1983-01-21 | Commissariat Energie Atomique | Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite |
US4599132A (en) * | 1985-01-18 | 1986-07-08 | Energy Materials Corporation | Guidance system for low angle silicon ribbon growth |
JPH0741393A (ja) * | 1993-07-28 | 1995-02-10 | Kanegafuchi Chem Ind Co Ltd | 連続鋳造法によるシリコン板の製造方法 |
JP3366951B2 (ja) * | 1993-11-01 | 2003-01-14 | 鐘淵化学工業株式会社 | 金属板の連続鋳造法、及びこれに用いる鋳型 |
JPH07256398A (ja) * | 1994-03-18 | 1995-10-09 | Kanegafuchi Chem Ind Co Ltd | 水平加熱鋳型式シリコン板連続鋳造装置 |
JPH08283095A (ja) * | 1995-04-13 | 1996-10-29 | Matsushita Electric Ind Co Ltd | シリコン結晶板の製造方法 |
JPH0912390A (ja) | 1995-06-26 | 1997-01-14 | Shin Etsu Chem Co Ltd | 板状材料の製造方法 |
JPH0912394A (ja) | 1995-06-26 | 1997-01-14 | Shin Etsu Chem Co Ltd | 板状結晶の製造方法 |
JPH09110591A (ja) | 1995-10-09 | 1997-04-28 | Shin Etsu Chem Co Ltd | 板状シリコン結晶の製造方法及び太陽電池 |
JP3948044B2 (ja) | 1996-02-29 | 2007-07-25 | 旭硝子株式会社 | ガラス板の成形方法 |
WO1998039804A1 (en) * | 1997-03-04 | 1998-09-11 | Astropower, Inc. | Columnar-grained polycrystalline solar cell substrate and improved method of manufacture |
JP2000264618A (ja) | 1999-03-23 | 2000-09-26 | Toshiba Corp | 板状シリコン多結晶の製造方法 |
JP2000327490A (ja) * | 1999-05-18 | 2000-11-28 | Mitsubishi Heavy Ind Ltd | シリコン結晶の製造方法およびその製造装置 |
JP2001031496A (ja) * | 1999-07-19 | 2001-02-06 | Sharp Corp | シリコンリボン製造装置及びその製造方法 |
EP1845067A1 (en) | 2004-12-16 | 2007-10-17 | National Institute of Advanced Industrial Science and Technology | Process for producing plate glass |
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2008
- 2008-01-22 WO PCT/JP2008/050762 patent/WO2008090864A1/ja active Application Filing
- 2008-01-22 US US12/524,438 patent/US20100086465A1/en not_active Abandoned
- 2008-01-22 CN CN2008800030813A patent/CN101616868B/zh not_active Expired - Fee Related
- 2008-01-22 EP EP08703609.1A patent/EP2128088B1/en not_active Not-in-force
- 2008-01-22 JP JP2008555060A patent/JP5062767B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102834553A (zh) * | 2010-02-08 | 2012-12-19 | Rgs发展有限公司 | 用于生产半导体材料箔的装置和方法 |
CN102834553B (zh) * | 2010-02-08 | 2016-05-18 | Rgs发展有限公司 | 用于生产半导体材料箔的装置和方法 |
CN102842487A (zh) * | 2011-06-22 | 2012-12-26 | 张良冬 | 形成pn、pin、n-型和p-型半导体薄膜的方法 |
CN102732950A (zh) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | 一种连续生长准单晶晶体的装置 |
CN102747419A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 一种多晶硅片生产装置及生产方法 |
CN102732950B (zh) * | 2012-06-20 | 2015-04-15 | 常州天合光能有限公司 | 一种连续生长准单晶晶体的装置 |
CN106119955A (zh) * | 2016-08-01 | 2016-11-16 | 镇江大成新能源有限公司 | 一种硅片生产系统 |
Also Published As
Publication number | Publication date |
---|---|
EP2128088A1 (en) | 2009-12-02 |
JP5062767B2 (ja) | 2012-10-31 |
US20100086465A1 (en) | 2010-04-08 |
JPWO2008090864A1 (ja) | 2010-05-20 |
WO2008090864A1 (ja) | 2008-07-31 |
EP2128088A4 (en) | 2012-03-07 |
EP2128088B1 (en) | 2013-05-29 |
CN101616868B (zh) | 2013-07-03 |
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