WO2008093726A1 - 蒸着装置、蒸着方法および蒸着装置の製造方法 - Google Patents

蒸着装置、蒸着方法および蒸着装置の製造方法 Download PDF

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Publication number
WO2008093726A1
WO2008093726A1 PCT/JP2008/051395 JP2008051395W WO2008093726A1 WO 2008093726 A1 WO2008093726 A1 WO 2008093726A1 JP 2008051395 W JP2008051395 W JP 2008051395W WO 2008093726 A1 WO2008093726 A1 WO 2008093726A1
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WO
WIPO (PCT)
Prior art keywords
deposition
partitioning
film forming
blow out
deposition apparatus
Prior art date
Application number
PCT/JP2008/051395
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English (en)
French (fr)
Inventor
Kenji Sudou
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US12/525,093 priority Critical patent/US20100104751A1/en
Priority to CN2008800037795A priority patent/CN101600815B/zh
Priority to DE112008000313T priority patent/DE112008000313T5/de
Priority to KR1020097018192A priority patent/KR101212276B1/ko
Publication of WO2008093726A1 publication Critical patent/WO2008093726A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
    • B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
    • B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

【課題】クロスコンタミネーションを低減させながら、同一処理容器内にて複数層の膜を連続的に形成する。 【解決手段】蒸着装置１０は、収納された異なる成膜材料をそれぞれ気化させる複数の蒸着源２１０と、複数の蒸着源２１０にて気化された成膜材料を吹き出し口Ｏｐから吹き出す複数の吹き出し機構１１０と、隣り合う吹き出し機構１１０を仕切る１または２以上の隔壁１２０と、有している。１または２以上の隔壁１２０は、各隔壁１２０から基板ＷまでのギャップＧ、各吹き出し口Ｏｐから各隔壁１２０の上面までの高さＴ、各隔壁の厚みＤおよび各蒸着源２１０の中心位置から各隔壁１２０の中心位置までの距離Ｅの関係が、Ｅ＜（Ｇ＋Ｔ）×Ｄ×Ｇ／２となるようにそれぞれ配設される。また、成膜材料の最長飛距離は、成膜材料の平均自由工程よりも短くなるように蒸着装置１０の内部圧力を０．０１Ｐａ以下に制御する。
PCT/JP2008/051395 2007-02-01 2008-01-30 蒸着装置、蒸着方法および蒸着装置の製造方法 WO2008093726A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/525,093 US20100104751A1 (en) 2007-02-01 2008-01-30 Evaporating apparatus, evaporating method and manufacturing method of evaporating apparatus
CN2008800037795A CN101600815B (zh) 2007-02-01 2008-01-30 蒸镀装置、蒸镀方法及蒸镀装置的制造方法
DE112008000313T DE112008000313T5 (de) 2007-02-01 2008-01-30 Bedampfungseinrichtung, Bedampfungsverfahren sowie Herstellverfahren für die Bedampfungseinrichtung
KR1020097018192A KR101212276B1 (ko) 2007-02-01 2008-01-30 증착 장치, 증착 방법 및 증착 장치의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007023402A JP5020650B2 (ja) 2007-02-01 2007-02-01 蒸着装置、蒸着方法および蒸着装置の製造方法
JP2007-023402 2007-02-01

Publications (1)

Publication Number Publication Date
WO2008093726A1 true WO2008093726A1 (ja) 2008-08-07

Family

ID=39674034

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051395 WO2008093726A1 (ja) 2007-02-01 2008-01-30 蒸着装置、蒸着方法および蒸着装置の製造方法

Country Status (7)

Country Link
US (1) US20100104751A1 (ja)
JP (1) JP5020650B2 (ja)
KR (1) KR101212276B1 (ja)
CN (1) CN101600815B (ja)
DE (1) DE112008000313T5 (ja)
TW (1) TW200907081A (ja)
WO (1) WO2008093726A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102171377A (zh) * 2008-09-30 2011-08-31 东京毅力科创株式会社 蒸镀装置、蒸镀方法以及存储有程序的存储介质

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5179739B2 (ja) * 2006-09-27 2013-04-10 東京エレクトロン株式会社 蒸着装置、蒸着装置の制御装置、蒸着装置の制御方法および蒸着装置の使用方法
JP2012169225A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 成膜装置
JP2014095131A (ja) * 2012-11-09 2014-05-22 Tokyo Electron Ltd 成膜装置
JP6358446B2 (ja) * 2014-03-11 2018-07-18 株式会社Ｊｏｌｅｄ 蒸着装置及びその制御方法、蒸着装置を用いた蒸着方法、及びデバイスの製造方法
CN108026630B (zh) * 2015-09-24 2020-07-07 夏普株式会社 蒸镀源和蒸镀装置以及蒸镀膜制造方法
CN107604337A (zh) * 2017-08-28 2018-01-19 武汉华星光电半导体显示技术有限公司 一种线性蒸发源侦测装置及其侦测方法
CN107858651B (zh) * 2017-11-27 2020-02-04 合肥鑫晟光电科技有限公司 一种蒸镀设备
KR102229219B1 (ko) * 2019-10-29 2021-03-17 주식회사 파인에바 증착 장비용 가열 어셈블리
JP7473892B2 (ja) * 2020-03-10 2024-04-24 株式会社昭和真空 蒸着源
JP2023538038A (ja) * 2020-08-21 2023-09-06 アプライド マテリアルズ インコーポレイテッド フレキシブル基板を処理するための処理システム並びにフレキシブル基板の特性及びフレキシブル基板上の１つ又は複数のコーティングの特性のうちの少なくとも１つを測定する方法

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JP2006291258A (ja) * 2005-04-07 2006-10-26 Tohoku Univ 成膜装置および成膜方法

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JPS62230966A (ja) * 1986-04-01 1987-10-09 Canon Inc 結晶成長装置
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JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
JP3734239B2 (ja) 1999-04-02 2006-01-11 キヤノン株式会社 有機膜真空蒸着用マスク再生方法及び装置
JP2003077662A (ja) * 2001-06-22 2003-03-14 Junji Kido 有機エレクトロルミネッセンス素子の製造方法および製造装置
JP4513329B2 (ja) * 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2006291258A (ja) * 2005-04-07 2006-10-26 Tohoku Univ 成膜装置および成膜方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102171377A (zh) * 2008-09-30 2011-08-31 东京毅力科创株式会社 蒸镀装置、蒸镀方法以及存储有程序的存储介质

Also Published As

Publication number Publication date
KR101212276B1 (ko) 2012-12-14
JP2008189951A (ja) 2008-08-21
US20100104751A1 (en) 2010-04-29
JP5020650B2 (ja) 2012-09-05
KR20090106649A (ko) 2009-10-09
CN101600815B (zh) 2012-03-28
DE112008000313T5 (de) 2009-12-17
TW200907081A (en) 2009-02-16
CN101600815A (zh) 2009-12-09

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