WO2008088021A1 - 磁気センサ素子及びその製造方法 - Google Patents

磁気センサ素子及びその製造方法 Download PDF

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Publication number
WO2008088021A1
WO2008088021A1 PCT/JP2008/050537 JP2008050537W WO2008088021A1 WO 2008088021 A1 WO2008088021 A1 WO 2008088021A1 JP 2008050537 W JP2008050537 W JP 2008050537W WO 2008088021 A1 WO2008088021 A1 WO 2008088021A1
Authority
WO
WIPO (PCT)
Prior art keywords
material film
magnetic material
sensor element
soft magnetic
magnetic sensor
Prior art date
Application number
PCT/JP2008/050537
Other languages
English (en)
French (fr)
Inventor
Kenichi Ohmori
Takuya Aizawa
Osamu Nakao
Kenji Tan
Original Assignee
Fujikura Ltd.
Akita Prefecture
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd., Akita Prefecture filed Critical Fujikura Ltd.
Priority to EP20080703392 priority Critical patent/EP2110867A1/en
Priority to US12/523,645 priority patent/US20100045285A1/en
Priority to CN2008800023167A priority patent/CN101584056B/zh
Publication of WO2008088021A1 publication Critical patent/WO2008088021A1/ja

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1269—Measuring magnetic properties of articles or specimens of solids or fluids of molecules labeled with magnetic beads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　この磁気センサ素子は、非磁性基板１上に形成された硬磁性体膜２と、硬磁性体膜２の上を覆う絶縁層３と、絶縁層３上に形成された軟磁性体膜４とを有し、硬磁性体膜２の着磁方向は、軟磁性体膜４の長手方向に対し角度θを有している。非磁性基板１を上から見た平面視において、前記硬磁性体膜２が形成された領域は、前記軟磁性体膜４が形成された領域よりも広い範囲にあり、かつ前記軟磁性体膜４が形成された領域はすべて前記硬磁性体膜２が形成された領域に重なっていることが好ましい。本発明によれば、均一なバイアス磁界が得られる磁気センサ素子を提供することができる。
PCT/JP2008/050537 2007-01-17 2008-01-17 磁気センサ素子及びその製造方法 WO2008088021A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP20080703392 EP2110867A1 (en) 2007-01-17 2008-01-17 Magnetic sensor element and method for manufacturing the same
US12/523,645 US20100045285A1 (en) 2007-01-17 2008-01-17 Magnetic sensor element and manufacturing method thereof
CN2008800023167A CN101584056B (zh) 2007-01-17 2008-01-17 磁传感器元件及其制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-007979 2007-01-17
JP2007007979 2007-01-17
JP2008-004880 2008-01-11
JP2008004880A JP2008197089A (ja) 2007-01-17 2008-01-11 磁気センサ素子及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008088021A1 true WO2008088021A1 (ja) 2008-07-24

Family

ID=39756161

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050537 WO2008088021A1 (ja) 2007-01-17 2008-01-17 磁気センサ素子及びその製造方法

Country Status (5)

Country Link
US (1) US20100045285A1 (ja)
EP (1) EP2110867A1 (ja)
JP (1) JP2008197089A (ja)
CN (1) CN101584056B (ja)
WO (1) WO2008088021A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034182A (ja) * 2008-07-28 2010-02-12 Tohoku Univ 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス
US9207292B2 (en) 2011-02-02 2015-12-08 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same
WO2020170746A1 (ja) * 2019-02-19 2020-08-27 昭和電工株式会社 磁気センサおよび磁気センサシステム

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US9222992B2 (en) * 2008-12-18 2015-12-29 Infineon Technologies Ag Magnetic field current sensors
US8717016B2 (en) 2010-02-24 2014-05-06 Infineon Technologies Ag Current sensors and methods
US8760149B2 (en) 2010-04-08 2014-06-24 Infineon Technologies Ag Magnetic field current sensors
US8680843B2 (en) * 2010-06-10 2014-03-25 Infineon Technologies Ag Magnetic field current sensors
US8283742B2 (en) 2010-08-31 2012-10-09 Infineon Technologies, A.G. Thin-wafer current sensors
US8975889B2 (en) 2011-01-24 2015-03-10 Infineon Technologies Ag Current difference sensors, systems and methods
US8963536B2 (en) 2011-04-14 2015-02-24 Infineon Technologies Ag Current sensors, systems and methods for sensing current in a conductor
US10599886B2 (en) * 2014-10-16 2020-03-24 Sikorsky Aircraft Corporation Magnetic identification assembly and method of identifying a component
AU2014415572B2 (en) 2014-12-31 2018-04-05 Halliburton Energy Services, Inc. Modifying magnetic tilt angle using a magnetically anisotropic material
US9778324B2 (en) * 2015-04-17 2017-10-03 Apple Inc. Yoke configuration to reduce high offset in X-, Y-, and Z-magnetic sensors
CN104931899B (zh) * 2015-05-11 2018-07-06 太原科技大学 一种提高磁场传感器探头灵敏度的方法
US10551215B2 (en) 2015-06-11 2020-02-04 Analog Devices Global Unlimited Company Systems, circuits and methods for determining a position of a movable object
JP6036938B1 (ja) * 2015-08-05 2016-11-30 愛知製鋼株式会社 磁気検出装置
JP6576175B2 (ja) * 2015-09-07 2019-09-18 公益財団法人電磁材料研究所 薄膜磁界センサおよびアレイ型薄膜磁界センサ
JP6370768B2 (ja) 2015-11-26 2018-08-08 矢崎総業株式会社 磁界検出センサ
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
JP6583208B2 (ja) * 2016-10-14 2019-10-02 株式会社デンソー 磁気検出素子
JP6240994B1 (ja) * 2016-12-15 2017-12-06 朝日インテック株式会社 ３次元磁界検出素子および３次元磁界検出装置
JP6885797B2 (ja) * 2017-06-12 2021-06-16 昭和電工株式会社 磁気センサ及び磁気センサの製造方法
CN107290694B (zh) * 2017-07-18 2020-12-18 上海交通大学 抑制方向串扰的电感型磁传感器及其制备方法
US10365123B2 (en) * 2017-07-21 2019-07-30 Texas Instruments Incorporated Anisotropic magneto-resistive (AMR) angle sensor
JP7203490B2 (ja) * 2017-09-29 2023-01-13 昭和電工株式会社 磁気センサ集合体及び磁気センサ集合体の製造方法
JP6913617B2 (ja) * 2017-12-01 2021-08-04 昭和電工株式会社 磁気センサ、計測装置及び磁気センサの製造方法
JP6828676B2 (ja) * 2017-12-27 2021-02-10 Tdk株式会社 磁気センサ
JP7141904B2 (ja) * 2018-10-12 2022-09-26 昭和電工株式会社 磁気センサシステム
JP7259293B2 (ja) * 2018-11-29 2023-04-18 株式会社レゾナック 磁気センサおよび磁気センサの製造方法
JP7203598B2 (ja) * 2018-12-27 2023-01-13 昭和電工株式会社 磁気センサおよび磁気センサの製造方法
CN113812011A (zh) * 2019-05-27 2021-12-17 昭和电工株式会社 磁传感器
JP2021103145A (ja) * 2019-12-25 2021-07-15 昭和電工株式会社 磁気センサ
JP2021105576A (ja) * 2019-12-26 2021-07-26 昭和電工株式会社 磁気センサ
JP7414703B2 (ja) * 2020-12-14 2024-01-16 株式会社東芝 磁気センサ及び検査装置

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JP3210933B2 (ja) 1996-09-17 2001-09-25 株式会社トーキン 磁気検出素子及びその製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034182A (ja) * 2008-07-28 2010-02-12 Tohoku Univ 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス
US9207292B2 (en) 2011-02-02 2015-12-08 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same
US9523747B2 (en) 2011-02-02 2016-12-20 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same
WO2020170746A1 (ja) * 2019-02-19 2020-08-27 昭和電工株式会社 磁気センサおよび磁気センサシステム
JP2020134301A (ja) * 2019-02-19 2020-08-31 昭和電工株式会社 磁気センサおよび磁気センサシステム
JP7203630B2 (ja) 2019-02-19 2023-01-13 昭和電工株式会社 磁気センサおよび磁気センサシステム

Also Published As

Publication number Publication date
CN101584056B (zh) 2011-08-17
CN101584056A (zh) 2009-11-18
EP2110867A1 (en) 2009-10-21
JP2008197089A (ja) 2008-08-28
US20100045285A1 (en) 2010-02-25

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