WO2008087856A1 - ＺｎＯ系半導体発光素子とその製造方法 - Google Patents

ＺｎＯ系半導体発光素子とその製造方法 Download PDF

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Publication number
WO2008087856A1
WO2008087856A1 PCT/JP2008/000019 JP2008000019W WO2008087856A1 WO 2008087856 A1 WO2008087856 A1 WO 2008087856A1 JP 2008000019 W JP2008000019 W JP 2008000019W WO 2008087856 A1 WO2008087856 A1 WO 2008087856A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
semiconductor
zno
emitting element
zno1
Prior art date
Application number
PCT/JP2008/000019
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English (en)
French (fr)
Inventor
Akio Ogawa
Michihiro Sano
Hiroyuki Kato
Hiroshi Kotani
Tomohumi Yamamuro
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Stanley Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co., Ltd. filed Critical Stanley Electric Co., Ltd.
Priority to JP2008554001A priority Critical patent/JP5373402B2/ja
Publication of WO2008087856A1 publication Critical patent/WO2008087856A1/ja
Priority to US12/501,764 priority patent/US7943927B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

【課題】発光層にＺｎＯ１－ｘＳｘを用い、発光効率の向上が図られたＺｎＯ系半導体発光素子を提供する。 【解決手段】ＺｎＯ系半導体発光素子は、ＺｎＯ１－ｘ１Ｓｘ１からなる第１の半導体層と、第１の半導体層の上方に形成され、ＺｎＯ１－ｘ２Ｓｘ２からなる第２の半導体層と、第２の半導体層の上方に形成され、ＺｎＯ１－ｘ３Ｓｘ３からなる第３の半導体層とを有し、第１及び第３の半導体層の伝導帯の下端のエネルギよりも、第２の半導体層の伝導帯の下端のエネルギの方が低くなり、かつ、第１及び第３の半導体層の価電子帯の上端のエネルギよりも、第２の半導体層の価電子帯の上端のエネルギの方が高くなるように、第１～第３の半導体層のＳ組成ｘ１～ｘ３が選択されている。
PCT/JP2008/000019 2007-01-15 2008-01-11 ＺｎＯ系半導体発光素子とその製造方法 WO2008087856A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008554001A JP5373402B2 (ja) 2007-01-15 2008-01-11 ＺｎＯ系半導体発光素子の製造方法
US12/501,764 US7943927B2 (en) 2007-01-15 2009-07-13 ZnO based semiconductor light emitting device and its manufacture method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-005700 2007-01-15
JP2007005700 2007-01-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/501,764 Continuation US7943927B2 (en) 2007-01-15 2009-07-13 ZnO based semiconductor light emitting device and its manufacture method

Publications (1)

Publication Number Publication Date
WO2008087856A1 true WO2008087856A1 (ja) 2008-07-24

Family

ID=39635861

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000019 WO2008087856A1 (ja) 2007-01-15 2008-01-11 ＺｎＯ系半導体発光素子とその製造方法

Country Status (3)

Country Link
US (1) US7943927B2 (ja)
JP (1) JP5373402B2 (ja)
WO (1) WO2008087856A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9396937B2 (en) 2013-03-07 2016-07-19 Ricoh Company, Ltd. P-type oxide composition, and method for producing P-type oxide composition
JP2018070807A (ja) * 2016-11-01 2018-05-10 スタンレー電気株式会社 量子ドット

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101067474B1 (ko) * 2009-09-17 2011-09-27 주식회사 퀀텀디바이스 반도체 발광소자

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
JPH11238914A (ja) * 1997-12-16 1999-08-31 Akihiko Yoshikawa Ｉｉ−ｖｉ族化合物半導体素子
JP2002016285A (ja) * 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
JP2002118328A (ja) * 2000-10-10 2002-04-19 Ricoh Co Ltd 半導体発光素子
JP2003081698A (ja) * 2001-09-05 2003-03-19 National Institute Of Advanced Industrial & Technology ＺｎＯＳＳｅ混晶半導体
JP2004128106A (ja) * 2002-10-01 2004-04-22 Murata Mfg Co Ltd 光半導体素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047170A1 (en) * 1997-04-11 1998-10-22 Nichia Chemical Industries, Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
JPH1123891A (ja) 1997-07-04 1999-01-29 Nippon Telegr & Teleph Corp <Ntt> 可変波長選択アレイ素子
US6878562B2 (en) * 2000-10-20 2005-04-12 Phosistor Technologies, Incorporated Method for shifting the bandgap energy of a quantum well layer
JP2004327655A (ja) * 2003-04-24 2004-11-18 Sharp Corp 窒化物半導体レーザ素子、その製造方法および半導体光学装置
JP2005142415A (ja) * 2003-11-07 2005-06-02 Sony Corp ＧａＮ系ＩＩＩ−Ｖ族化合物半導体層の選択成長方法、半導体発光素子の製造方法および画像表示装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
JPH11238914A (ja) * 1997-12-16 1999-08-31 Akihiko Yoshikawa Ｉｉ−ｖｉ族化合物半導体素子
JP2002016285A (ja) * 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
JP2002118328A (ja) * 2000-10-10 2002-04-19 Ricoh Co Ltd 半導体発光素子
JP2003081698A (ja) * 2001-09-05 2003-03-19 National Institute Of Advanced Industrial & Technology ＺｎＯＳＳｅ混晶半導体
JP2004128106A (ja) * 2002-10-01 2004-04-22 Murata Mfg Co Ltd 光半導体素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MEYER B.K. ET AL.: "Structural properties and bandgap bowing of Zn01-xSx thin films deposited by reactive sputtering", APPLIED PHYSICS LETTERS, vol. 85, no. 21, 22 November 2004 (2004-11-22), pages 4929 - 4931, XP012063505, DOI: doi:10.1063/1.1825053 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9396937B2 (en) 2013-03-07 2016-07-19 Ricoh Company, Ltd. P-type oxide composition, and method for producing P-type oxide composition
JP2018070807A (ja) * 2016-11-01 2018-05-10 スタンレー電気株式会社 量子ドット

Also Published As

Publication number Publication date
JP5373402B2 (ja) 2013-12-18
US20090272972A1 (en) 2009-11-05
US7943927B2 (en) 2011-05-17
JPWO2008087856A1 (ja) 2010-05-06

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