WO2008073682A1 - Composition de résine réfléchissant la lumière, appareil électroluminescent et appareil d'affichage optique - Google Patents

Composition de résine réfléchissant la lumière, appareil électroluminescent et appareil d'affichage optique Download PDF

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Publication number
WO2008073682A1
WO2008073682A1 PCT/US2007/085171 US2007085171W WO2008073682A1 WO 2008073682 A1 WO2008073682 A1 WO 2008073682A1 US 2007085171 W US2007085171 W US 2007085171W WO 2008073682 A1 WO2008073682 A1 WO 2008073682A1
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Prior art keywords
light emitting
resin composition
light
epoxy resin
emitting device
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PCT/US2007/085171
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English (en)
Inventor
Akito Muramatsu
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3M Innovative Properties Company
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Publication of WO2008073682A1 publication Critical patent/WO2008073682A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Definitions

  • the present invention relates to a light reflecting resin composition.
  • the present invention relates also to an optical apparatus and an optical display apparatus using such a light reflecting resin composition.
  • a light emitting device is generally bonded to the underlying substrate by an adhesive or its film in an optical apparatus.
  • a light reflecting layer (such as a white color film, a white color coating, a silver color film, a silver color coating, etc) is arranged in the proximity of the light emitting device to improve a reflection factor.
  • bondability and the reflection performance have been discussed functionally separately in the light emitting apparatus, and the reflection factor of the adhesive used while sandwiched between the light emitting device and the light reflecting layer on the surface of the substrate has seldom been discussed.
  • Patent Document 1 describes a light emitting diode 100 shown in Fig. 1.
  • An LED chip 102 is bonded to a cup bottom surface of a mount lead (lead electrode) 105 through a die bonding resin 103.
  • the LED chip 102 is sealed by a light transmissible resin 101 consisting of an epoxy resin containing less than 10% of a phenol derivative epoxy resin.
  • the LED chip 102 is electrically connected to the lead electrodes 105 and 106 through a wire 104.
  • the cup portion of the mount lead 105 is formed of iron-incorporating copper the surface of which is silver plated.
  • the die bonding resin 103 is formed of a colorless transparent epoxy resin composition.
  • Patent Document 2 describes a light emitting diode using aluminum paste containing aluminum powder in mixture in place of silver powder of the silver paste as a substrate bonding material for mounting the light emitting device.
  • a light reflecting resin composition comprising an epoxy resin not having a carbon-carbon double bond, 40 to 400 parts by weight of titanium oxide on the basis of 100 parts by weight of the epoxy resin, and a curing agent.
  • a light emitting apparatus comprising a substrate and a light emitting device, wherein the substrate and the light emitting device are bonded through the resin composition described above.
  • a light emitting apparatus comprising a substrate, a light reflecting layer formed of the resin composition described above and a light emitting device, wherein the substrate and the light emitting device are bonded through the light reflecting layer.
  • an optical display apparatus comprising members bonded or sealed by using the resin composition described above.
  • Fig. 1 is a sectional view showing an example of a construction of a light emitting diode according to the prior art.
  • Fig. 2 is a sectional view for explaining light reflection effects in a light emitting apparatus using a light reflecting resin composition according to the present invention for a bonding material of a light emitting device.
  • Fig. 3 is a sectional view for explaining an example where a light reflecting resin composition according to the present invention is used for a light reflecting layer of a light emitting diode.
  • Fig. 4 is a sectional view showing an example using a light reflecting resin composition according to the invention as a light shading sealant of a liquid crystal display device.
  • Fig. 5 is a graph drawn by plotting the relation between titanium oxide content and a reflection factor of a resin composition.
  • the invention can provide a light reflecting resin composition that has a high optical reflection factor, has excellent thermal stability and optical stability and is excellent in bonding strength, too, as will be understood from the following detailed description.
  • titanium oxide reflects light from a light emitting device, etc, and a specific amount of titanium oxide is combined with an epoxy resin not having a carbon-carbon unsaturated bond to thereby prepare a resin composition.
  • an epoxy resin not having a carbon-carbon unsaturated bond to thereby prepare a resin composition.
  • the light reflecting resin composition according to the invention can be advantageously used for various applications in optical apparatuses by utilizing the excellent properties described above.
  • the resin composition according to the invention can be advantageously utilized as a bonding material for bonding a light emitting device such as a light emitting diode to a base substrate of the light emitting apparatus.
  • a transparent epoxy resin has been used in the past as an adhesive for bonding a light emitting device (LED chip, etc) as explained previously.
  • LED chip light emitting device
  • light emission efficiency of the light emitting device is affected by various factors such as flatness of the base substrate reflecting light, the degree of degradation of the substrate, and so forth, in addition to the degree of degradation of transparency of the adhesive.
  • the resin composition according to the invention when used as a bonding material and the light emitting device is fixed to the substrate, the major proportion of light emitted from the light emitting device are reflected by the layer formed of the resin composition of the invention that is formed between the light emitting device and the substrate. In consequence, light can be effectively utilized without the influences of the base substrate.
  • the resin composition according to the invention can be utilized for bonding outer peripheral members of an optical image display apparatus such as a liquid crystal display panel as a light-shading sealant, for example, by utilizing excellent light shading property resulting from the high reflection factor of the resin composition. It is possible by using the resin composition of the invention to effectively prevent external light from entering the apparatus and internal light of the apparatus from leaking outside.
  • the resin composition according to the present invention comprises:
  • the epoxy resin not having a carbon-carbon unsaturated bond used in the present invention is used as a main agent in the resin composition.
  • the carbon-carbon unsaturated bond does not exist in the straight chain portion, the ring portion, the substitution group and others of the epoxy resin.
  • the alicyclic epoxy resin is particularly useful. For, a glass transition point of a cured product after curing of the alicyclic epoxy resin is relatively high and when an epoxy resin having a high glass transition point is selected, bonding strength in use at high temperatures can be easily secured.
  • Such an epoxy resin can be used either alone or in combination of two or more epoxy resins.
  • the invention defines those alicyclic epoxy resins which have an iodine value of 0 to 2 (measurement value by the Wijs method prescribed in ASTM 1959-97) as the "epoxy resin not having the carbon-carbon unsaturated bond" and those hydrogenation type epoxy resins which have 1000 ppm or below (measurement value by using a gas chromatograph mass analyzer) of a structure (impurity) in which the carbon-carbon unsaturated bond remains in the resin without being hydrogenated, as the "epoxy resin not having the carbon-carbon unsaturated bond".
  • the "alicyclic epoxy resins having an iodine value of 0 to 2" and the “hydrogenation type epoxy resins having 1,000 ppm or below of the structure (impurity) in which the carbon-carbon unsaturated bond remains in the resin” can be used as the "epoxy resin not having the carbon-carbon unsaturated bond” in the present invention.
  • alicyclic epoxy resins are 3,4-epoxycyclohexenylmethyl- 3',4'-epoxycyclohexene carboxylate (trade name "C2021", Daisel Chemical Co.) and 1 ,4-cyclohexane dimethanoldigrycidyl ether (trade name "DME- 100", New Japan Chemical Co.) and concrete examples of such hydrogenation type epoxy resins are hydrogenated bis-phenol-A type epoxy resin (trade name "YX-8000", Japan Epoxy Resin Co.). These epoxy resins are commercially available.
  • the epoxy resin used in the invention has excellent heat resistance and is generally stable (is not decomposed) at a temperature higher than about 25 0 C, and does not invite the drop of the reflection factor, deformation and the drop of bonding strength.
  • the epoxy resin used in the invention is excellent in weatherability (light fastness) in addition to the heat resistance (particularly discoloration). In other words, this epoxy resin is free from the drop of the reflection factor, yellowing and other changes and does not invite the deformation and the drop of the bonding strength, either, even when exposed to severe light emission condition and weather condition for a long period of more than about 100 days. It is assumed that the above-mentioned features of the epoxy resin used in the present invention are associated with the glass transition point (Tg) of the epoxy resin. To satisfy such features, the glass transition point of the epoxy resin is preferably within the range of about 80 to about 200 0 C and more preferably within the range of about 120 to about 18O 0 C.
  • aromatic epoxy resins such as the resins consisting of a bis-phenol A type epoxy resin (DGEBA) or a bis-phenol F type epoxy resin (DGEBF) as a main component resin have been used in the past as the epoxy resin adhesives. Because these resins have a benzene ring in the main skeletal structure, however, the double ring of the benzene ring undergoes cleavage with the passage of time and discoloration of the resin occurs. Even when filler having a high reflection factor is blended with such an aromatic epoxy resin, the optical reflection factor remarkably drops owing to discoloration (yellowing) with the passage of time of the resin itself.
  • DGEBA bis-phenol A type epoxy resin
  • DGEBF bis-phenol F type epoxy resin
  • one or more kind of epoxy resins and other resins may be added in supplementation to the epoxy resin described above within the range in which adverse effects do not occur in the operation and effect of the invention.
  • a suitable example of the supplementary resins is tris(2,3-epoxypropyl)isocyanurate (trade name "TEPIC", produced by Nissan Kagaku K. K.).
  • the supplementary resin can contribute to the improvements of toughness and glass transition point, for example.
  • the resin composition according to the present invention contains a specific amount of titanium oxide with respect to the epoxy resin described above. Titanium oxide exists in the dispersion form in the resin composition and is preferably under the state where it is dispersed substantially uniformly.
  • titanium oxide is known as white color filler, and aluminum oxide and barium sulfate are known besides titanium oxide.
  • the present invention uses titanium oxide among these white color fillers from the aspect that it is excellent in optical reflection in the visible light region.
  • Titanium oxide is available in a rutile type and an anatase type and the anatase type titanium oxide is particularly suitable. In comparison with the rutile type, the anatase type titanium oxide has excellent reflection property throughout the entire visible wavelength region and can keep such features after aging at a high temperature, too.
  • Titanium oxide can be used in various forms. When the dispersion property and the reflection factor are taken into account, however, titanium oxide is preferably used in the form of spherical or elliptic powder or particles.
  • the diameter of the powder and the particles can be changed in a broad range but is generally within the range of about 0.1 to 20 ⁇ m and preferably within the range of about 0.2 to about 5 ⁇ m. To improve the reflection factor, the diameter of the powder and the particle is preferably substantially uniform while variance is limited.
  • titanium oxide can be used in an amount within the range of about 40 to about 400 parts by weight and more preferably within the range of about 100 to about 360 parts by weight on the basis of 100 parts by weight of the epoxy resin.
  • the resin composition according to the present invention may contain a suitable amount of the filler as a precipitation preventive agent in addition to titanium oxide. Fine silica is a suitable example of such precipitation preventive filler.
  • the blend amount of the precipitation preventive filler is preferably within the range of about 0.2 to about 10 parts by weight on the basis of 100 parts by weight of the epoxy resin.
  • the resin composition according to the present invention further contains a curing agent in addition to the epoxy resin and titanium oxide.
  • a curing agent is used for curing the epoxy group of the epoxy resin.
  • the curing agent that can be used in the invention includes a cationic curing agent, an amine curing agent, an imidazole curing agent, a curing agent not having a carbon-carbon unsaturated bond and their comb9ination. Among them, the curing agent not having a carbon-carbon unsaturated bond is preferably used.
  • the term "curing agent not having a carbon-carbon unsaturated bond” means those curing agents which have an iodine value of 0 to 2 (measurement value by the Wijs method prescribed in ASTN 1959-97).
  • the "curing agent not having a carbon-carbon unsaturated bond” is preferably an acid anhydride.
  • An example of the acid anhydride is 4-methylhexahydrophthalic anhydride or compounds containing this acid anhydride.
  • the acid anhydride may be used either alone or in a combination of two or more kinds of curing agents.
  • the amount of the curing agent is generally and preferably within the range of about 20 to about 160 parts by weight on the basis of 100 parts by weight of the epoxy resin from the aspect of the glass transition point (shelf life stability) of the resin composition.
  • a curing catalyst can be used in combination depending on the kind of the curing agent used.
  • the curing catalyst is appropriately used when the curing temperature becomes high by using only the curing agent as the curing system because the curing catalyst is effective for keeping the curing temperature to a low level. More concretely, an amine type curing catalyst and a cationic curing catalyst can be used.
  • curing agents may be used either alone or in a combination of two or more kinds of curing agents.
  • the amine type curing catalyst in particular, is desirable because the drop of the reflection factor cannot be observed even after the use for an extended period of time.
  • the amount of these curing catalysts is generally and preferably within the range of 1 to 15 parts by weight on the basis of 100 parts by weight of the epoxy resin and further preferably within the range of 3 to 7 parts by weight.
  • the resin composition according to the present invention can arbitrarily contain additives, whenever necessary.
  • suitable additives are a silane coupling agent
  • the resin composition according to the present invention can be used in various forms. It is generally used in the form of paste.
  • the resin composition is taken out from the container at the time of use and can be applied to the bonding position or potted.
  • a bar coat method for example, can be employed to apply the paste.
  • the resin composition of the present invention can be used after it is molded into a sheet-like molding. Handling property can be improved by shaping the resin composition into the sheet form.
  • the sheet thickness can be changed in accordance with factors such as a use object and a use position. The thickness is generally about 50 to about 200 ⁇ m and preferably about 80 to about 120 ⁇ m.
  • a calendar molding method can be employed for shaping the sheet.
  • a release sheet such as a silicone treated sheet may be laminated on the resulting sheet of the resin composition as is generally executed in this technical field.
  • the resulting sheet-like resin composition may be taken up into a roll and may be preserved or transported.
  • the resin composition according to the present invention is stable at a temperature of about 25 to about 27O 0 C and can be used for various bonding objects, particularly in the field of optical light emitting apparatuses.
  • a typical example is the use as the bonding material of the light emitting device as previously explained with reference to Fig. 2.
  • the light emitting device is typically an LED chip, but is not limited thereto.
  • Fig. 2 shows an example where the optical reflecting resin composition according to the present invention is used as a sheet-like bonding material 1.
  • the bonding material 1 contains titanium oxide 2 having light reflecting property.
  • Titanium oxide 2 is dispersed in a substantially uniform state in the bonding material 1.
  • the bonding material 1 can bond and fix a light emitting device 4 to a substrate 3.
  • the periphery of the light emitting device 4 is covered with a sealing resin 5.
  • a light emitting apparatus 10 is a light emitting diode, for example, the light emitting device 4 is an LED chip.
  • light from the light emitting device 4 is directly emitted from the light emitting device 4 as indicated by an optical path Li and moreover, light traveling towards the bonding material 1 is reflected on the surface of the bonding material 1 as indicated by an optical path L 2 and can impinge against and can then be reflected by titanium oxide 2 inside the bonding material 1 , though not shown in the drawing, because the bonding material 1 has a high reflection factor. I this way, the present invention can effectively utilize energy of light from the light emitting device 4.
  • the resin composition of the present invention when used as the bonding material of the light emitting device such as the LED chip, the light emitting device must be fixed to a base such as a substrate with a predetermined bonding strength so as to impart the impact strength to the light emitting device.
  • the shearing bonding strength of the resin composition is preferably at least 1 MPa.
  • An initial reflection factor is at least 80% and preferably at least 90% in at least a short wavelength range (near UV side: such as 400, 460 nm) of the full visible wavelength region (400 to 760 nm; JIS Z8120, etc) when the light reflecting resin composition according to the present invention is used as the bonding material of the light emitting device such as the LED chip.
  • the reflection factor after heating for a predetermined time is preferably at least 50%. The reflection characteristics in the visible range will be hereby described. Light of a short wavelength becomes more likely to be absorbed by an irradiation article with the decrease of the wavelength than light of a long wavelength, so that the reflection factor is likely to drop.
  • That short wavelength light has a wavelength of 400 nm and an initial reflection factor of at least 80%, preferably at least 90%, means that the reflection factor is at least 80% and preferably 90% in the full visible light range and its reflected light can be evaluated as extremely approximate to white color light. Even when the reflection factor is at least 80% and preferably not greater than 90% at the short wavelength light of 400 nm, at least 80% and preferably at least 90% can be secured for reflected light in the wavelength range of 460 nm or above. Therefore, this reflected light can be evaluated as reflected light not having any practical problem from the aspect of use efficiency of the reflection of visible light.
  • the light reflecting resin composition according to the present invention can be utilized as a light reflecting layer 11 of a substrate 13 in a light emitting apparatus 20 as shown in an enlarged view of Fig. 3.
  • the light reflecting layer 11 of the light reflecting resin composition is first disposed on the substrate and a light emitting device 14 such as an LED chip is then arranged and fixed onto this light reflecting layer 11.
  • the light reflecting layer 11 exists up to the peripheral portion of the bonding portion of the light reflecting layer 11 and the light emitting device 14 as shown in Fig. 3.
  • the prior art technologies improve the reflection property of the substrate 13 by applying silver plating to the substrate or arranging a white color film or a silver color film or coating.
  • the reflecting function can be imparted to the coating or sheet of the resin composition.
  • the light emitting apparatus 20 light from the light emitting device 4 is reflected by the surface of the light reflecting layer 11 bonded to the light emitting device 4 and by the surface of the light reflecting layer 11 not bonded to the light emitting layer 4 and is also reflected after it impinges against titanium oxide 2 inside the light reflecting layer 11.
  • the light emitting device 14 bonded by the light reflecting layer 11 to the substrate 13 has wires 16 and is sealed by the sealing resin 15.
  • the resin composition according to the present invention can be used for other purposes, too. Because the resin composition of the invention has a high reflection factor or in other words, high shading property, it can be used for preventing undesired invasion of external light or leak of internal light of an image display portion as a core of an optical image display apparatus such as a liquid crystal display panel and a plasma display panel. More concretely, an outer frame portion of an image display apparatus can be constituted by various members and when the resin composition of the invention is used as a bonding material plus sealing material, excellent shading property can be acquired.
  • Fig. 4 shows an example of the use of the shading object with reference to a liquid crystal display panel 30.
  • This liquid crystal display panel 30 represents an ordinary structure in this field of technology and both upper and lower surfaces of a liquid crystal 28 are covered with an orientation film 26, a transparent electrode 25, a glass substrate 23 and a polarization plate 24.
  • the liquid crystal 28 is equipped with a spacer 27 and both of its exposed ends are closed by a sealant 21 formed of the light reflecting resin composition according to the invention. Since titanium oxide 22 is dispersed in the light shading sealant 21, it is possible to reflect and cut off undesired rays of light that are otherwise to enter the liquid crystal from outside. Consequently, the liquid crystal display panel in which the liquid crystal 28, the orientation film 26 and the glass substrate 23 are bonded or sealed by the resin composition of the invention does not easily invite the drop of the color tone and turbidity but can stably display clear images.
  • the present invention provides a light emitting apparatus having a substrate and a light emitting device, wherein the substrate and the light emitting device are bonded by the resin composition according to the invention.
  • the invention provides also a light emitting apparatus including a substrate, a light reflecting layer disposed on a surface of the substrate and formed of the light reflecting resin composition of the invention and a light emitting device, wherein the substrate and the light emitting device are bonded through a light reflecting layer.
  • a typical example of such a light emitting apparatus is a light emitting diode and its light emitting device is an LED chip.
  • the present invention also provides an optical display apparatus including members that are bonded by using the light reflecting resin composition of the invention.
  • the resin composition prevents invasion of external light into the apparatus and leak of light inside the apparatus to the outside. Consequently, optical clear information can be stably displayed.
  • a typical example of such an optical display apparatus is a liquid crystal display panel and a plasma display panel.
  • other examples of the optical display apparatus include an SED (surface electric field display) and organic EL device.
  • Example 1 The procedure of Example 1 was repeated but in these examples, the kinds of the starting materials and their blend amounts were changed as tabulated in Table 1. When mixing, coating and curing were similarly carried out in the same way as in Example 1 , there could be obtained resin composition sheets having a thickness of about 0.1 mm.
  • Comparative Examples 1 to 4 and Referential Examples 1 to 3 The procedure of Example 1 was repeated but in these examples, the kinds of the starting materials and their blend amounts were changed as tabulated in Table 1 for the sake of comparison. When mixing, coating and curing were similarly carried out in the same way as in Example 1 , there could be obtained resin composition sheets having a thickness of about 0.1 mm.
  • Referential Example 3 used as such silver paste (trade name "Dautite D-550", Fujikura Kasei Kogyo K. K.) as an example not containing white color filler.
  • Aluminum powder used in Comparative Example 4 was a product of Toyo Aluminum K. K. and its mean particle diameter was 17 ⁇ m.
  • a shearing bonding test was carried out in accordance with JIS 6850.
  • Test pieces used in this test were aluminum 5052, a surface degreasing method was degreasing with methyl ethyl ketone (MEK), an adhesive curing condition was at 15O 0 C for 1 hour and a tensile speed was 5mm/min.
  • MEK methyl ethyl ketone
  • an adhesive curing condition was at 15O 0 C for 1 hour
  • a tensile speed was 5mm/min.
  • the shearing bonding strength was 3 MPa or more, a sufficient bonding strength as a bonding material could be obtained. Therefore, the test pieces having a shearing bonding strength of at least 3 MPa were evaluated as "good”. Measurement result tabulated in the following Table 2 could be obtained.
  • Reflection factor after aging at a high temperature (15O 0 C) for 1,000 hours was measurement by the following method.
  • Each 0.1 mm-thick resin composition sheet prepared on a glass plate was as such used as a sample and "Spectrophotometer U-4100" (product of Hitachi, Ltd.) was used as a measuring instrument.
  • the reflection factor was measured for light of two kinds of wavelengths (400 nm and 460 nm). Measurement result tabulated in the following Table 2 could be obtained.
  • Reflection factor after aging by a QUV test was measurement by the following method.
  • Each 0.1 mm-thick resin composition sheet prepared on a glass plate was as such used as a sample and "Spectrophotometer U-4100" (product of Hitachi, Ltd.) was used as a measuring instrument.
  • the reflection factor was measured for light of two kinds of wavelengths (400 nm and 460 nm). Measurement result tabulated in the following Table 2 could be obtained.
  • the QUV test was carried out by using an accelerated weathering tester, QUV tester (The Q Panel Company) at a light emission wavelength of 351 nm.
  • the reflection factor was measured at two kinds of wavelengths (400 nm and 460 nm). Measurement results shown in the following Table 3 could be obtained.
  • the resin compositions containing the alicyclic epoxy resin and titanium oxide exhibited excellent initial reflection factors and reflection factor after QUV aging in the short wavelength range containing 460 nm.
  • the resin compositions containing the alicyclic epoxy resin and anatase type titanium oxide exhibited excellent initial reflection factors and reflection factor after QUV aging in the short wavelength range containing 400 nm.
  • the adhesive consisting of an aromatic epoxy resin as the main component as represented in Comparative Example 1 its initial reflection factor not only changed with the wavelength but also dropped greatly after high temperature aging and QUV aging. It could be understood from the results of Comparative Examples 2 to 4 that when white color fillers (AI 2 O 3 , Ba 2 SO 4 ) other than titanium oxide were used and when aluminum powder was used, a sufficient initial reflection factor could not be achieved.
  • Example 1 The procedure of Example 1 was repeated but in this example, different amounts of cationic curing catalyst, U-CAT5003 (Sun-Apro Co.) or CP66 (Adeka Co.), was used in place of 4 parts by weight of an amine type curing catalyst (FXRl 020).
  • U-CAT5003 Sun-Apro Co.
  • CP66 Alka Co.
  • FXRl 020 an amine type curing catalyst

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

La présente invention concerne une composition de résine réfléchissant la lumière ayant un facteur élevé de réflexion lumineuse, une grande stabilité à la chaleur et une stabilité optique élevée et une excellente résistance de collage également. L'invention concerne une composition de résine réfléchissant la lumière comportant une résine époxyde n'ayant pas de double liaison carbone-carbone, entre 40 et 400 parties en poids d'oxyde de titane par rapport à 100 parties en poids de résine époxyde et un agent durcissant.
PCT/US2007/085171 2006-12-07 2007-11-20 Composition de résine réfléchissant la lumière, appareil électroluminescent et appareil d'affichage optique WO2008073682A1 (fr)

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EP2383807A2 (fr) * 2008-12-30 2011-11-02 Samsung LED Co., Ltd. Enveloppe de dispositif émetteur de lumière et son procédé de production
US20170229594A1 (en) * 2014-08-21 2017-08-10 Toyo Aluminium Kabushiki Kaisha Light diffusion member for interconnectors, interconnector for solar cells provided with same, and solar cell module
DE102016113969A1 (de) * 2016-07-28 2018-02-01 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterchips, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements

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JP5368048B2 (ja) * 2008-10-03 2013-12-18 スリーエム イノベイティブ プロパティズ カンパニー 光反射性樹脂組成物、発光装置及び光学表示装置
JP5327521B2 (ja) * 2009-01-20 2013-10-30 利昌工業株式会社 白色プリプレグ、白色積層板、及び金属箔張り白色積層板
JP5544739B2 (ja) * 2009-03-31 2014-07-09 日立化成株式会社 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP6133004B2 (ja) * 2009-03-31 2017-05-24 日立化成株式会社 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP5665285B2 (ja) * 2009-06-15 2015-02-04 日立化成株式会社 光半導体素子搭載用部材及び光半導体装置
CN102473824B (zh) 2009-06-26 2015-08-05 株式会社朝日橡胶 白色反射材料及其制造方法
US8431423B2 (en) * 2009-07-16 2013-04-30 Koninklijke Philips Electronics N.V. Reflective substrate for LEDS
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
WO2011118109A1 (fr) 2010-03-23 2011-09-29 株式会社朝日ラバー Substrat réfléchissant souple, procédé de fabrication associé, et composition de matériau de base utilisé dans un substrat réfléchissant
CN103459493A (zh) * 2011-03-31 2013-12-18 三菱瓦斯化学株式会社 树脂组合物、预浸料及覆金属箔层压板
JP4991957B1 (ja) * 2011-07-14 2012-08-08 積水化学工業株式会社 光半導体装置用白色硬化性組成物及び光半導体装置用成形体
JP2013168684A (ja) * 2013-06-03 2013-08-29 Hitachi Chemical Co Ltd 光半導体素子搭載用部材及び光半導体装置
JP6337996B2 (ja) * 2017-08-09 2018-06-06 日立化成株式会社 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP6774730B2 (ja) * 2018-03-15 2020-10-28 株式会社タムラ製作所 白色樹脂組成物

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EP2383807A2 (fr) * 2008-12-30 2011-11-02 Samsung LED Co., Ltd. Enveloppe de dispositif émetteur de lumière et son procédé de production
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EP2383807A4 (fr) * 2008-12-30 2014-06-18 Samsung Electronics Co Ltd Enveloppe de dispositif émetteur de lumière et son procédé de production
US20170229594A1 (en) * 2014-08-21 2017-08-10 Toyo Aluminium Kabushiki Kaisha Light diffusion member for interconnectors, interconnector for solar cells provided with same, and solar cell module
DE102016113969A1 (de) * 2016-07-28 2018-02-01 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterchips, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements

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