JPS5612786A - Photo coupling semiconductor device - Google Patents
Photo coupling semiconductor deviceInfo
- Publication number
- JPS5612786A JPS5612786A JP8741479A JP8741479A JPS5612786A JP S5612786 A JPS5612786 A JP S5612786A JP 8741479 A JP8741479 A JP 8741479A JP 8741479 A JP8741479 A JP 8741479A JP S5612786 A JPS5612786 A JP S5612786A
- Authority
- JP
- Japan
- Prior art keywords
- titanium oxide
- liquid paraffin
- thermosetting resin
- improve
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229920005989 resin Polymers 0.000 abstract 5
- 239000011347 resin Substances 0.000 abstract 5
- 239000004593 Epoxy Substances 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 229940057995 liquid paraffin Drugs 0.000 abstract 2
- 229920001187 thermosetting polymer Polymers 0.000 abstract 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N 1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylic acid Chemical compound C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 abstract 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011256 inorganic filler Substances 0.000 abstract 1
- 229910003475 inorganic filler Inorganic materials 0.000 abstract 1
- 229920003986 novolac Polymers 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
PURPOSE:To improve light reflection factor and to improve dampproof and dielectric strength by collectively adding and distributing titanium oxide and liquid paraffin to a mold resin layer. CONSTITUTION:A light emitting element 1 and a light sensitive element 2 are provided on electrode lead wires 3a and 3b respectively and a transparent resin 4 is filled between the elements 1 and 2. Furthermore, the whole is molded by a thermosetting resin constituent 5. The thermosetting resin constituent 5 is composed of the following as essential component: -Epoxy compound containing at least one piece of epoxy radical in a molecule. -At least, one kind of either compound selected from the groups of phenol novolak resin and organic acid anhydride. -Hardening accelerator, inorganic filler, titanium oxide and liquid paraffin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8741479A JPS5612786A (en) | 1979-07-12 | 1979-07-12 | Photo coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8741479A JPS5612786A (en) | 1979-07-12 | 1979-07-12 | Photo coupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5612786A true JPS5612786A (en) | 1981-02-07 |
| JPS6331115B2 JPS6331115B2 (en) | 1988-06-22 |
Family
ID=13914210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8741479A Granted JPS5612786A (en) | 1979-07-12 | 1979-07-12 | Photo coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5612786A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008073682A1 (en) * | 2006-12-07 | 2008-06-19 | 3M Innovative Properties Company | Light reflecting resin composition, light emitting apparatus and optical display apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6133004B2 (en) * | 2009-03-31 | 2017-05-24 | 日立化成株式会社 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, method for manufacturing the same, and optical semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5129939A (en) * | 1974-05-24 | 1976-03-13 | Texas Instruments Inc | |
| JPS5480691A (en) * | 1977-12-12 | 1979-06-27 | Toshiba Corp | Photo coupling semiconductor device |
-
1979
- 1979-07-12 JP JP8741479A patent/JPS5612786A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5129939A (en) * | 1974-05-24 | 1976-03-13 | Texas Instruments Inc | |
| JPS5480691A (en) * | 1977-12-12 | 1979-06-27 | Toshiba Corp | Photo coupling semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008073682A1 (en) * | 2006-12-07 | 2008-06-19 | 3M Innovative Properties Company | Light reflecting resin composition, light emitting apparatus and optical display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6331115B2 (en) | 1988-06-22 |
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