JPS60103650A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS60103650A JPS60103650A JP58210990A JP21099083A JPS60103650A JP S60103650 A JPS60103650 A JP S60103650A JP 58210990 A JP58210990 A JP 58210990A JP 21099083 A JP21099083 A JP 21099083A JP S60103650 A JPS60103650 A JP S60103650A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- emitting diode
- series
- light emitting
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は光硬化性樹脂組成物で封止した変色のない、耐
クラツク性に優れた発光ダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a light emitting diode sealed with a photocurable resin composition that does not discolor and has excellent crack resistance.
［発明の技術的背景とその問題点コ
従来から発光ダイオードは湿気や不純物に極めて敏感な
ため、液状エポキシ樹脂組成物等で樹脂封止されている
。 樹脂封止の方法としては、透明容器内に液状樹脂組
成物を注入した後、発光ダイオード部品を所望の部分ま
で埋没させその後に樹脂組成物を加熱硬化させて一体化
するいわゆる■ポツティング法、型容器を用いて同様に
封止を行なった後、脱型を行なういわゆる■キャスティ
ング法、樹脂組成物中に発光ダイオード部品を浸漬して
これを一度引き上げ、付着した樹脂を加熱硬化さゼるい
わゆる■ディッピング法、液状樹脂組成物を所望のに部
分に滴下させてそのまま硬化させる■ドロッピング法等
がある。 このような樹脂封止に用いられる樹脂には次
のような性能が必要とされている。[Technical background of the invention and its problems] Since light emitting diodes are extremely sensitive to moisture and impurities, they have been encapsulated with a liquid epoxy resin composition or the like. The resin sealing method is the so-called potting method, which involves injecting a liquid resin composition into a transparent container, burying the light-emitting diode component up to the desired part, and then heating and curing the resin composition to integrate it. The so-called ``casting method'' involves sealing in the same manner using a container and then removing the mold.The so-called ``casting method'' involves immersing the light-emitting diode component in a resin composition, pulling it up once, and heating and hardening the adhering resin. There are dipping methods, and (2) dropping methods in which a liquid resin composition is dropped onto a desired area and cured as it is. The resin used for such resin sealing is required to have the following performance.
（１）ポツティング、キャスティング等の方法の場合、
低粘度樹脂であって封止に際して作業し易く、しかも脱
泡が短時間で行なえるものであること。(1) In the case of methods such as potting and casting,
It must be a low-viscosity resin that is easy to work with during sealing and can be defoamed in a short time.
（２）硬化に際しての硬化収縮が小さいものであること
。 硬化収縮が大きい場合は封止に際してクラックが生
じたり、ヒートショックによる残留歪みに起因するクラ
ックが生じたり、あるいはボンデングされた金線が破断
する等の不都合が生ずる。(2) Curing shrinkage upon curing is small. If the curing shrinkage is large, problems such as cracks occurring during sealing, cracks due to residual strain due to heat shock, or breakage of the bonded gold wire may occur.
（３）得られた硬化物の電気絶縁性がよく、熱膨張係数
が小さいこと。゛
（４）得られた硬化物の耐環境性が良好なこと。(3) The obtained cured product has good electrical insulation properties and a small coefficient of thermal expansion. (4) The obtained cured product has good environmental resistance.
（５）熱劣化による変色の少ないものであること。(5) It should have little discoloration due to thermal deterioration.
等であり、これらの要求特性を満足させるものとして現
在酸無水物砂止型エポキシ樹脂を主成分とする樹脂組成
物が広く使用されている。 しかしながら、この樹脂は
加熱硬化型であるため、硬化に長時間を要し生産性に劣
るという難点があった。etc., and resin compositions containing acid anhydride-type epoxy resins as a main component are currently widely used to satisfy these required properties. However, since this resin is heat-curable, it takes a long time to cure, resulting in poor productivity.
すなわち、例えばキャスティング法を例にあげれば、脱
型可能なまでに６０分程度必要とＪる。That is, if we take the casting method as an example, it will take about 60 minutes before the mold can be removed.
硬化時間を短縮するため硬化剤を増量したり、硬化温度
を上げる方法も検問されているが硬化時の内部発熱が大
きくなり、これに伴って様々なトラブルが生じていた。In order to shorten the curing time, methods of increasing the amount of curing agent or raising the curing temperature have been investigated, but internal heat generation during curing increases, resulting in various problems.
このような問題を克服する方法として、近時不飽和ポ
リエステル系、アクリル系またはメタクリル系等の樹脂
組成物に光重合開始剤を添加したＵＶ硬化性低粘度樹脂
組成物を用いる試みが一部においてなされている。As a way to overcome these problems, some attempts have recently been made to use UV-curable low-viscosity resin compositions made by adding photopolymerization initiators to unsaturated polyester, acrylic, or methacrylic resin compositions. being done.
しかしながら、このＵＶ硬化性低粘度樹脂組成物を使用
しまた場合は、次のような欠点が生ずるため、全く実用
化が困難であるのが現状である。However, when using this UV-curable low-viscosity resin composition, it is currently difficult to put it into practical use at all because of the following drawbacks.
即ち、空気中の酸素により、空気と接触する部分の重合
阻害が起こり（いわゆる重合禁止効果）、その結果樹脂
表面がべたつき、これを改善するために光重合開始剤の
含有間を増大させると変色が著しくなり、発光ダイオー
ド素子の発光光線の光透過率が悪＜イ丁り信頼性が低下
する欠点があった。In other words, oxygen in the air inhibits polymerization of the parts that come into contact with the air (so-called polymerization inhibition effect), resulting in the resin surface becoming sticky.In order to improve this, increasing the amount of photopolymerization initiator content causes discoloration. The light transmittance of the light emitted from the light emitting diode element is poor, and the reliability of the light emitting diode element is reduced.
また、ラジカル付加型の樹脂は本質的に硬化収縮が大き
く、封止時にクラックが入り易くなったり内部歪みが残
存してボンディングワイヤーが破断されるオープン不良
が生ずる等の欠点があった。In addition, radical addition type resins inherently have large curing shrinkage, and have drawbacks such as being susceptible to cracks during sealing and remaining internal distortions, resulting in open failures in which bonding wires are broken.
［発明の目的］
本発明は、上記の欠点に鑑みてなされたもので、短時間
で硬化して、内部歪みやクラック、変色がなく、かつ、
輝度劣化の少ない発光ダイオードを提供することを目的
としている。[Object of the Invention] The present invention has been made in view of the above-mentioned drawbacks, and is capable of curing in a short time, without internal distortion, cracks, or discoloration, and
The purpose is to provide a light emitting diode with less deterioration in brightness.
［発明の概要］
本発明は、上記の目的を達成するために鋭意研究を重ね
た結果、カチオン重合反応による樹脂組成物を使用すれ
ば、少量の硬化剤で短時間で硬化し、硬化収縮が少なく
、かつ、変色等が極めて少ない発光ダイオードが得られ
ることを見い出したものである。 即ち、本発明は、カ
チオン重合性スピロオルソエステル系樹脂と、カチオン
重合性単量体と、アリルオニウム塩系光重合開始剤とを
主成分とする光硬化性樹脂組成物で発光ダイオード素子
およびり旨下部を樹脂封止することを特徴とする発光ダ
イオードである。[Summary of the Invention] As a result of extensive research to achieve the above object, the present invention has revealed that if a resin composition produced by a cationic polymerization reaction is used, it can be cured in a short time with a small amount of curing agent, and there is no curing shrinkage. It has been discovered that a light emitting diode with very little discoloration or the like can be obtained. That is, the present invention provides a light-emitting diode device and a light-emitting diode device using a photocurable resin composition containing a cationically polymerizable spiro-orthoester resin, a cationically polymerizable monomer, and an allyl onium salt photopolymerization initiator. This is a light emitting diode characterized by having its lower part sealed with resin.
本発明に用いるカチオン重合性スピロオルソエステル系
樹脂としては、昭和高分子社製ＥＸＰレジンであるＥＸ
Ｐ−１０１、ＥＸＰ−２１１等が挙げられる。The cationic polymerizable spiro-orthoester resin used in the present invention is EXP resin manufactured by Showa Kobunshi Co., Ltd.
Examples include P-101 and EXP-211.
具体的には、下記のような構造を有している。Specifically, it has the following structure.
５− および 等が挙げられ単独もしくは混合して用いる。5- and etc., and can be used alone or in combination.
本発明に用いるカチオン重合性単量体としては、多官能
性又は１官能性のビニルエーテル化合物、６−
ビニル脂環式化合物、ビニル有機低重合体や種々のアリ
ル化合物が挙げられる。Examples of the cationically polymerizable monomer used in the present invention include polyfunctional or monofunctional vinyl ether compounds, 6-vinyl alicyclic compounds, vinyl organic low polymers, and various allyl compounds.
具体的には、イソブチルビニルエーテル、ｎ−オクチル
ビニルエーテル、１，２．３−プロパン１〜リビニル工
−チル、トリメチロールプロパントリビニルエーテル、
ビニルシクロヘキサン、ビニルシクロプロパン、１−フ
ェニルビニルシクロプロパン、（ここにｎは整数°であ
る）
等が挙げられ単独もしくは混合して用いる。Specifically, isobutyl vinyl ether, n-octyl vinyl ether, 1,2,3-propane 1-rivinyl-ethyl, trimethylolpropane trivinyl ether,
Examples include vinylcyclohexane, vinylcyclopropane, 1-phenylvinylcyclopropane (where n is an integer °), and the like, which can be used alone or in combination.
本発明の特徴はカチオン重合性であることが特に重要な
ことであり、ラジカル付加重合系では本発明の目的を達
成することかできず、カチオン重合性にして初めて本発
明の目的が達成できるものである。A particularly important feature of the present invention is that it is cationically polymerizable; radical addition polymerization systems cannot achieve the purpose of the present invention, and the purpose of the present invention can only be achieved with cationically polymerizable systems. It is.
本発明に用いるアリルオニウム塩系光重合開始剤として
は、一般式
％式％
（但し式中Ａ、はアリル基、ｐは２〜３の整数、ＡはＩ
、Ｓ、Ｓｅ、ＢはＢＦ、 、ＰＦ６、Ｓｂ Ｆ６、ＡＳ
Ｆ６を示す。）で表わされるものである。 このアリ
ルオニウム塩系光重合開始剤は、従来のジアゾニウム塩
系重合開始剤のように硬化物に発泡が起こったり、着色
したりすることがなく、また配合樹脂等のポットライフ
も良好であり、さらにカチオン重合であるから空気中の
酸素による重合用害作用もないメリットを有している。The allyl onium salt photopolymerization initiator used in the present invention has the general formula % (wherein A is an allyl group, p is an integer of 2 to 3, and A is I
, S, Se, B is BF, , PF6, Sb F6, AS
Indicates F6. ). This allyl onium salt-based photopolymerization initiator does not cause foaming or coloring of the cured product unlike conventional diazonium salt-based polymerization initiators, and also has a good pot life for compounded resins, etc. Furthermore, since it is a cationic polymerization, it has the advantage that oxygen in the air does not affect the polymerization.
［発明の実施例］ 次に本発明を実施例によって説明する。[Embodiments of the invention] Next, the present invention will be explained by examples.
ＥＸＰ−１０１（昭和高分子社製２官能型スピロオルソ
エステル樹脂商品名）６０重ｆｆ１部、ジエチレングリ
コールジビニルエーテル３０重量部、トリラウリル１〜
リヂオフオスフアイト １．０重量部、ジフェニルヨー
ドニラムチ１〜ラフルオロボレート３．０重量部を常温
で３０分間撹拌混合して光硬化性樹脂組成物を得た。EXP-101 (trade name of bifunctional spiro-orthoester resin manufactured by Showa Kobunshi Co., Ltd.) 60 parts by weight ff, 30 parts by weight of diethylene glycol divinyl ether, 1 to 1 part by weight of trilauryl
A photocurable resin composition was obtained by stirring and mixing 1.0 parts by weight of lydiophosphite and 3.0 parts by weight of 1 to 3.0 parts by weight of diphenyl iodonylamthi at room temperature for 30 minutes.
図面は本発明発光ダイオードの一実施例を示す断面図で
ある。 図において、反射板１上に導電性銀系ペースｊ
〜２がディスベンザ−により吐出されており、さらにこ
の銀系ペースト２の上にはガリウム−砒素系チップ３が
マウントされて加熱により接着されている。 接着後チ
ップ３とボンディング側電極４の間は金線５によって接
続されて、素子が組立てられる。The drawing is a sectional view showing an embodiment of the light emitting diode of the present invention. In the figure, a conductive silver-based paste is placed on the reflective plate 1.
2 is discharged by a dispenser, and a gallium-arsenic chip 3 is mounted on top of the silver paste 2 and bonded by heating. After bonding, the chip 3 and the bonding side electrode 4 are connected by a gold wire 5, and the device is assembled.
先に製造した樹脂組成物を成形用金型に注入し、前述し
た素子をこの樹脂組成物中に浸漬させた後、８０Ｗ ／
ｃｍの高圧水銀灯３灯で４０秒間紫外線を照射し硬化
させた。 光源との距離は１５ｃｍであった。The previously produced resin composition was injected into a mold, and the above-mentioned element was immersed in this resin composition.
It was cured by irradiating ultraviolet rays for 40 seconds with three cm high-pressure mercury lamps. The distance to the light source was 15 cm.
その後説型させることにより樹脂封止６された発光ダイ
オードを得た。Thereafter, a resin-sealed light emitting diode 6 was obtained by molding.
このようにして製造した発光ダイオードの特性は第１表
の通りであり、充分に実用に耐えるものであった。The characteristics of the light emitting diode thus manufactured were as shown in Table 1, and were sufficiently durable for practical use.
第１表
９−
［発明の効果］
以上説明したように本発明の樹脂封止した発光ダイオー
ドは、短時間で硬化ができるため生産性が高く、しかも
樹脂の内部歪みやクラック、変色がなく、また輝疫の劣
化も極めて少ない。 このため肉厚封止も可能であると
いう利点がある。Table 1 9 - [Effects of the Invention] As explained above, the resin-sealed light emitting diode of the present invention can be cured in a short time, resulting in high productivity, and there is no internal distortion, cracking, or discoloration of the resin. Also, there is very little deterioration due to bright spots. Therefore, there is an advantage that thick sealing is also possible.
図面は本発明の発光ダイオードの一実施例を示す断面図
である。
１・・・反射板、 ２・・・銀系ペースト、 ３・・・
チップ、 ４・・・ボンディング側電極、 ５・・・金
線、６・・・封止樹脂。
特許出願人 東芝ケミカル株式会社
代理人 弁理士 諸１）英二
１０−The drawing is a sectional view showing an embodiment of the light emitting diode of the present invention. 1...Reflector, 2...Silver paste, 3...
Chip, 4... Bonding side electrode, 5... Gold wire, 6... Sealing resin. Patent applicant Toshiba Chemical Co., Ltd. agent Patent attorney 1) Eiji 10-
Claims (1)
チオン重合性単樋体と、アリルオニウム塩系光重合開始
剤とを主成分とする光硬化性樹脂組成物で発光ダイオー
ド素子およびリード部を樹脂封止することを特徴とする
発光ダイオード。1. The light-emitting diode element and the lead portion are resin-sealed with a photocurable resin composition whose main components are a cationically polymerizable spiro-orthoester resin, a cationically polymerizable monolayer, and an allyl onium salt-based photopolymerization initiator. A light emitting diode characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210990A JPS60103650A (en) | 1983-11-11 | 1983-11-11 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210990A JPS60103650A (en) | 1983-11-11 | 1983-11-11 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60103650A true JPS60103650A (en) | 1985-06-07 |
| JPH0329180B2 JPH0329180B2 (en) | 1991-04-23 |
Family
ID=16598490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58210990A Granted JPS60103650A (en) | 1983-11-11 | 1983-11-11 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60103650A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0335688A2 (en) * | 1988-03-31 | 1989-10-04 | Mitsui Petrochemical Industries, Ltd. | Light-emitting or receiving device, encapsulant for light-emitting or receiving element and the method for encapsulating thereof |
| EP1498961A1 (en) * | 2002-04-25 | 2005-01-19 | Tabuchi Electric Co.,Ltd. | Light emitting diode and process for producing the same |
| EP1081761A4 (en) * | 1998-05-29 | 2006-08-09 | Rohm Co Ltd | Semiconductor device |
-
1983
- 1983-11-11 JP JP58210990A patent/JPS60103650A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0335688A2 (en) * | 1988-03-31 | 1989-10-04 | Mitsui Petrochemical Industries, Ltd. | Light-emitting or receiving device, encapsulant for light-emitting or receiving element and the method for encapsulating thereof |
| US5101264A (en) * | 1988-03-31 | 1992-03-31 | Mitsui Petrochemical Ind. | Light-emitting or receiving device with smooth and hard encapsulant resin |
| EP1081761A4 (en) * | 1998-05-29 | 2006-08-09 | Rohm Co Ltd | Semiconductor device |
| EP1498961A1 (en) * | 2002-04-25 | 2005-01-19 | Tabuchi Electric Co.,Ltd. | Light emitting diode and process for producing the same |
| EP1498961A4 (en) * | 2002-04-25 | 2007-03-07 | Pearl Lamp Works Ltd | Light emitting diode and process for producing the same |
| US7339201B2 (en) | 2002-04-25 | 2008-03-04 | Pearl Lamp Works, Ltd. | Light emitting diode and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0329180B2 (en) | 1991-04-23 |
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