JPH0329180B2 - - Google Patents
Info
- Publication number
- JPH0329180B2 JPH0329180B2 JP21099083A JP21099083A JPH0329180B2 JP H0329180 B2 JPH0329180 B2 JP H0329180B2 JP 21099083 A JP21099083 A JP 21099083A JP 21099083 A JP21099083 A JP 21099083A JP H0329180 B2 JPH0329180 B2 JP H0329180B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- series
- emitting diode
- sealed
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 8
- 150000003839 salts Chemical class 0.000 claims abstract description 6
- 239000000178 monomer Substances 0.000 claims abstract description 5
- 239000011342 resin composition Substances 0.000 claims description 15
- 239000003999 initiator Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 8
- 238000002845 discoloration Methods 0.000 abstract description 6
- 238000006116 polymerization reaction Methods 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 4
- -1 spiro orthoester Chemical class 0.000 abstract description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001768 cations Chemical class 0.000 abstract 4
- 230000000379 polymerizing effect Effects 0.000 abstract 4
- 239000000805 composite resin Substances 0.000 abstract 3
- 239000007858 starting material Substances 0.000 abstract 2
- 238000007789 sealing Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000010538 cationic polymerization reaction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000007342 radical addition reaction Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- VQBRSCDCSOKQHR-UHFFFAOYSA-N 1-cyclopropylethenylbenzene Chemical compound C=1C=CC=CC=1C(=C)C1CC1 VQBRSCDCSOKQHR-UHFFFAOYSA-N 0.000 description 1
- CZAVRNDQSIORTH-UHFFFAOYSA-N 1-ethenoxy-2,2-bis(ethenoxymethyl)butane Chemical compound C=COCC(CC)(COC=C)COC=C CZAVRNDQSIORTH-UHFFFAOYSA-N 0.000 description 1
- SAMJGBVVQUEMGC-UHFFFAOYSA-N 1-ethenoxy-2-(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOC=C SAMJGBVVQUEMGC-UHFFFAOYSA-N 0.000 description 1
- OZCMOJQQLBXBKI-UHFFFAOYSA-N 1-ethenoxy-2-methylpropane Chemical compound CC(C)COC=C OZCMOJQQLBXBKI-UHFFFAOYSA-N 0.000 description 1
- XXCVIFJHBFNFBO-UHFFFAOYSA-N 1-ethenoxyoctane Chemical compound CCCCCCCCOC=C XXCVIFJHBFNFBO-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910017008 AsF 6 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015892 BF 4 Inorganic materials 0.000 description 1
- 229910021115 PF 6 Inorganic materials 0.000 description 1
- 229910018286 SbF 6 Inorganic materials 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 1
- YIWFBNMYFYINAD-UHFFFAOYSA-N ethenylcyclopropane Chemical compound C=CC1CC1 YIWFBNMYFYINAD-UHFFFAOYSA-N 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- JZNDMMGBXUYFNQ-UHFFFAOYSA-N tris(dodecylsulfanyl)phosphane Chemical compound CCCCCCCCCCCCSP(SCCCCCCCCCCCC)SCCCCCCCCCCCC JZNDMMGBXUYFNQ-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
〔発明の技術分野〕
本発明は光硬化性樹脂組成物で封止した変色の
ない、耐クラツク性に優れた発光ダイオードに関
する。
〔発明の技術的背景とその問題点〕
従来から発光ダイオードは湿気や不純物に極め
て敏感なため、液状エポキシ樹脂組成物等で樹脂
封止されている。樹脂封止の方法としては、透明
容器内に液状樹脂組成物を注入した後、発光ダイ
オード部品を所望の部分まで埋没させその後に樹
脂組成物を加熱硬化させて一体化するいわゆる
ポツテイング法、型容器を用いて同様に封止を行
なつた後、脱型を行なういわゆるキヤステイン
グ法、樹脂組成物中に発光ダイオード部品を浸漬
してこれを一度引き上げ、付着した樹脂を加熱硬
化させるいわゆるデイツピング法、液状樹脂組
成物を所望のに部分に滴下させてそのまま硬化さ
せるドロツピング法等がある。このような樹脂
封止に用いられる樹脂には次のような性能が必要
とされている。
(1) ポツテイング、キヤスステイング等の方法の
場合、低粘度樹脂であつて封止に際して作業し
易く、しかも脱泡が短時間で行なえるものであ
ること。
(2) 硬化に際しての硬化収縮が小さいものである
こと、硬化収縮が大きい場合は封止に際してク
ラツクが生じたり、ヒートシヨツクによる残留
歪みに起因するクラツクが生じたり、あるいは
ボンデイングされた金線が破断する等の不都合
が生ずる。
(3) 得られた硬化物の電気絶縁性がよく、熱膨張
係数が小さいこと。
(4) 得られた硬化物の耐環境性が良好なこと。
(5) 熱劣化による変色の少ないものである
等であり、これらの要求特性を満足させるものと
して現在酸無水物硬化型エポキシ樹脂を主成分と
する樹脂組成物が広く使用されている。しかしな
がら、この樹脂は加熱硬化型であるため、硬化に
長時間を要し生産性に劣るという難点があつた。
すなわち、例えばキヤステイング法を例にあげ
れば、脱型可能なまでに60分程度必要とする。硬
化時間を短縮するため硬化剤を増量したり、硬化
温度を上げる方法も検討されているが硬化時の内
部発熱が大きくなり、これに伴つて様々なトラブ
ルが生じていた。このような問題を克服する方法
として、近時不飽和ポリエステル系、アクリル系
またはメタクリル系等の樹脂組成物に光重合開始
剤を添加したUV硬化性低粘度樹脂組成物を用い
る試みが一部においてなされている。
しかしながら、このUV硬化性低粘度樹脂組成
物を使用した場合は、次のような欠点が生ずるた
め、全く実用化が困難であるのが現状である。即
ち、空気中の酸素により、空気と接触する部分の
重合阻害が起こり（いわゆる重合禁止効果）、そ
の結果樹脂表面がべたつき、これを改善するため
に光重合開始剤の含有量を増大させると変色が著
しくなり、発光ダイオード素子の発光光線の光透
過率が悪くなり信頼性が低下する欠点があつた。
また、ラジカル付加型の樹脂は本質的に硬化収
縮が大きく、封止時にクラツクが入り易くなつた
り内部歪みが残存してボンデイングワイヤーが破
断されるオープン不良が生ずる等の欠点があつ
た。
〔発明の目的〕
本発明は、上記の欠点に鑑みてなされたもの
で、短時間で硬化して、内部歪みやクラツク、変
色がなく、かつ、輝度劣化の少ない発光ダイオー
ドを提供することを目的としている。
〔発明の概要〕
本発明は、上記の目的を達成するために鋭意研
究を重ねた結果、カチオン重合反応による樹脂組
成物を使用すれば、少量の硬化剤で短時間で硬化
し、硬化収縮が少なく、かつ、変色等が極めて少
ない発光ダイオードが得られることを見い出した
ものである。即ち、本発明は、カチオン重合性ス
ピロオルソエステル系樹脂と、カチオン重合性単
量体と、アリルオニウム塩系光重合開始剤とを主
成分とする光硬化性樹脂組成物で発光ダイオード
素子およびリード部を樹脂封止することを特徴と
する発光ダイオードである。
本発明に用いるカチオン重合性スピロオルソエ
ステル系樹脂としては、昭和高分子社製EXPレ
ジンであるEXP−101、EXP−211等が挙げられ
る。
具体的には、下記のような構造を有している。
および
等が挙げられ単独もしくは混合して用いる。
本発明に用いるカチオン重合性単量体として
は、多官能性又は１官能性のビニルエーテル化合
物、ビニル脂環式化合物、ビニル有機低重合体や
種々のアリル化合物が挙げられる。
具体的には、イソブチルビニルエーテル、ｎ−
オクチルビニルエーテル、１，２，３−プロパン
トリビニエーテル、トリメチロールプロパントリ
ビニルエーテル、ビニルシクロヘキサン、ビニル
シクロプロパン、１−フエニルビニルシクロプロ
パン、
CH2＝CH−Ｏ−（CH2−CH2−Ｏ）o
−CH＝CH2
（ここにｎは整数である）
等が挙げられ単独もしくは混合して用いる。
本発明の特徴はカチオン重合性であることが特
に重要なことであり、ラジカル付加重合系では本
発明の目的を達成することができず、カチオン重
合性にして初めて本発明の目的が達成できるもの
である。
本発明に用いるアリルオニウム塩系光重合開始
剤としては、一般式
（Ar）ｐ−A+・B-
（但し式中Arはアリル基、ｐは２〜３の整数、
ＡはＩ、Ｓ、Se、ＢはBF4、PF6、SbF6、AsF6
を示す。）で表わされるものである。このアリル
オニウム塩系光重合開始剤は、従来のジアゾニウ
ム塩系重合開始剤のように硬化物に発泡が起こつ
たり、着色したりすることがなく、また配合樹脂
等のポツトライフも良好であり、さらにカチオン
重合であるから空気中の酸素による重合阻害作用
もないメリツトを有している。
〔発明の実施例〕
次に本発明を実施例によつて説明する。
EXP−101（昭和高分子社製、２官能型スピロ
オルソエスル樹脂商品名）60重量部、ジエチレン
グリコールジビニルエーテル30重量部、トリラウ
リルトリチオフオスフアイト1.0重量部、ジフエ
ニルヨードニウムテトラフルオロボレート3.0重
量部を常温で30分間攬拌混合して光硬化性樹脂組
成物を得た。
図面は本発明発光ダイオードの一実施例を示す
断面図である。図において、反射板１上に導電性
銀系ペースト２がデイスペンサーにより吐出され
ており、さらにこの銀系ペースト２の上にはガリ
ウム−砒素系チツプ３がマウントされて加熱によ
り接着されている。接着後チツプ３とボンデイン
グ側電極４の間は金線５によつて接続されて素子
が組立てられる。
先に製造した樹脂組成物を成形用金型に注入
し、前述した素子をこの樹脂組成物中に浸漬させ
た後、80W／cmの高圧水銀灯３灯で40秒間紫外
線を照射し硬化させた。光源との距離は15cmであ
つた。
その後脱型させることにより樹脂封止６された
発光ダイオードを得た。
このようにして製造した発光ダイオードの特性
は第１表の通りであり、充分に実用に耐えるもの
であつた。
[Technical Field of the Invention] The present invention relates to a light emitting diode sealed with a photocurable resin composition, which does not discolor and has excellent crack resistance. [Technical Background of the Invention and Problems Therein] Conventionally, light emitting diodes are extremely sensitive to moisture and impurities, so they have been resin-sealed with a liquid epoxy resin composition or the like. Resin sealing methods include the so-called potting method, which involves injecting a liquid resin composition into a transparent container, burying the light-emitting diode components to the desired area, and then heating and curing the resin composition to integrate the molded container. The so-called casting method, in which the mold is removed after sealing is performed in the same manner using a resin composition, the so-called dipping method, in which the light emitting diode component is immersed in a resin composition, pulled up once, and the adhered resin is cured by heating. There is a dropping method in which a liquid resin composition is dropped onto a desired area and cured as it is. The resin used for such resin sealing is required to have the following performance. (1) In the case of methods such as potting and casting, the resin must be of low viscosity, easy to work with during sealing, and defoaming can be performed in a short time. (2) Curing shrinkage during curing must be small; if curing shrinkage is large, cracks may occur during sealing, cracks may occur due to residual distortion due to heat shock, or bonded gold wire may break. This may cause inconveniences such as (3) The resulting cured product has good electrical insulation and a small coefficient of thermal expansion. (4) The obtained cured product has good environmental resistance. (5) Resin compositions containing acid anhydride-curable epoxy resins as a main component are currently widely used to satisfy these required characteristics, such as less discoloration due to thermal deterioration. However, since this resin is heat-curable, it takes a long time to cure, resulting in poor productivity. That is, in the case of the casting method, for example, it takes about 60 minutes before the mold can be removed. In order to shorten the curing time, methods of increasing the amount of curing agent or raising the curing temperature have been considered, but internal heat generation during curing increases, resulting in various problems. As a way to overcome these problems, some attempts have recently been made to use UV-curable low-viscosity resin compositions made by adding photopolymerization initiators to unsaturated polyester, acrylic, or methacrylic resin compositions. being done. However, when this UV-curable low-viscosity resin composition is used, it is currently difficult to put it into practical use because of the following drawbacks. In other words, oxygen in the air inhibits polymerization in the parts that come into contact with the air (so-called polymerization inhibition effect), resulting in the resin surface becoming sticky, and to improve this, increasing the content of photopolymerization initiator causes discoloration. This has resulted in a disadvantage that the light transmittance of the light emitted from the light emitting diode element becomes worse and the reliability is lowered. In addition, radical addition type resins inherently have large curing shrinkage, and have drawbacks such as being prone to cracks during sealing and remaining internal distortions, resulting in open failures in which bonding wires are broken. [Object of the Invention] The present invention was made in view of the above-mentioned drawbacks, and an object of the present invention is to provide a light emitting diode that cures in a short time, is free from internal distortion, cracks, and discoloration, and exhibits less deterioration in brightness. It is said that [Summary of the Invention] As a result of intensive research to achieve the above object, the present invention has been made based on the results of the present invention. By using a resin composition produced by a cationic polymerization reaction, it can be cured in a short time with a small amount of curing agent, and there is no curing shrinkage. It has been discovered that a light emitting diode with very little discoloration or the like can be obtained. That is, the present invention provides light-emitting diode elements and leads using a photocurable resin composition containing a cationically polymerizable spiro-orthoester resin, a cationically polymerizable monomer, and an allyl onium salt photopolymerization initiator. This is a light emitting diode characterized by having a portion sealed with resin. Examples of the cationic polymerizable spiro-orthoester resin used in the present invention include EXP-101 and EXP-211, which are EXP resins manufactured by Showa Kobunshi Co., Ltd. Specifically, it has the following structure. and etc., and can be used alone or in combination. Examples of the cationic polymerizable monomer used in the present invention include polyfunctional or monofunctional vinyl ether compounds, vinyl alicyclic compounds, vinyl organic low polymers, and various allyl compounds. Specifically, isobutyl vinyl ether, n-
Octyl vinyl ether, 1,2,3-propane trivinyl ether, trimethylolpropane trivinyl ether, vinylcyclohexane, vinylcyclopropane, 1-phenylvinylcyclopropane, CH2 =CH-O-( CH2 - CH2- O ) o -CH=CH 2 (where n is an integer), etc., and can be used alone or in combination. A particularly important feature of the present invention is that it is cationically polymerizable; radical addition polymerization systems cannot achieve the purpose of the present invention, and the purpose of the present invention can only be achieved with cationic polymerization. It is. The allyl onium salt photopolymerization initiator used in the present invention has the general formula (Ar)p-A + B - (wherein Ar is an allyl group, p is an integer of 2 to 3,
A is I, S, Se, B is BF 4 , PF 6 , SbF 6 , AsF 6
shows. ). This allyl onium salt-based photopolymerization initiator does not cause foaming or coloring of the cured product unlike conventional diazonium salt-based polymerization initiators, and also has a good pot life of compounded resins, etc. Furthermore, since it is a cationic polymerization, it has the advantage that oxygen in the air does not inhibit polymerization. [Examples of the Invention] Next, the present invention will be explained by referring to Examples. EXP-101 (manufactured by Showa Kobunshi Co., Ltd., trade name of bifunctional spiro-orthoester resin) 60 parts by weight, diethylene glycol divinyl ether 30 parts by weight, trilauryl trithiophosphite 1.0 parts by weight, diphenyliodonium tetrafluoroborate 3.0 parts by weight The components were stirred and mixed at room temperature for 30 minutes to obtain a photocurable resin composition. The drawing is a sectional view showing one embodiment of the light emitting diode of the present invention. In the figure, a conductive silver paste 2 is discharged onto a reflecting plate 1 by a dispenser, and a gallium-arsenic chip 3 is mounted on the silver paste 2 and bonded by heating. After bonding, the chip 3 and the bonding side electrode 4 are connected by a gold wire 5, and the device is assembled. The previously produced resin composition was injected into a mold, and the above-described element was immersed in this resin composition, followed by irradiation with ultraviolet light for 40 seconds using three 80 W/cm high-pressure mercury lamps to cure it. The distance to the light source was 15 cm. Thereafter, the mold was removed to obtain a resin-sealed light emitting diode 6. The characteristics of the light emitting diode thus manufactured were as shown in Table 1, and it was sufficiently durable for practical use.
以上説明したように本発明の樹脂封止した発光
ダイオードは、短時間で硬化ができるため生産性
が高く、しかも樹脂の内部歪みやクラツク、変色
がなく、また輝度の劣化も極めて少ない。このた
め肉厚封止も可能であるという利点がある。
As explained above, the resin-sealed light emitting diode of the present invention can be cured in a short time, resulting in high productivity, and there is no internal distortion, cracking, or discoloration of the resin, and there is extremely little deterioration in brightness. Therefore, there is an advantage that thick sealing is also possible.
図面は本発明の発光ダイオードの一実施例を示
す断面図である。
１……反射板、２……銀系ペースト、３……チ
ツプ、４……ボンデイング側電極、５……金線、
６……封止樹脂。
The drawing is a sectional view showing an embodiment of the light emitting diode of the present invention. 1... Reflection plate, 2... Silver paste, 3... Chip, 4... Bonding side electrode, 5... Gold wire,
6...Sealing resin.
Claims (1)
と、カチオン重合性単量体と、アリルオニウム塩
系光重合開始剤とを主成分とする光硬化性樹脂組
成物で発光ダイオード素子およびリード部を樹脂
封止することを特徴とする発光ダイオード。1. A light-emitting diode element and lead portion are resin-sealed with a photocurable resin composition containing a cationically polymerizable spiro-orthoester resin, a cationically polymerizable monomer, and an allyl onium salt-based photopolymerization initiator. A light emitting diode characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210990A JPS60103650A (en) | 1983-11-11 | 1983-11-11 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210990A JPS60103650A (en) | 1983-11-11 | 1983-11-11 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60103650A JPS60103650A (en) | 1985-06-07 |
| JPH0329180B2 true JPH0329180B2 (en) | 1991-04-23 |
Family
ID=16598490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58210990A Granted JPS60103650A (en) | 1983-11-11 | 1983-11-11 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60103650A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5101264A (en) * | 1988-03-31 | 1992-03-31 | Mitsui Petrochemical Ind. | Light-emitting or receiving device with smooth and hard encapsulant resin |
| TW414924B (en) * | 1998-05-29 | 2000-12-11 | Rohm Co Ltd | Semiconductor device of resin package |
| JP2005142174A (en) * | 2002-04-25 | 2005-06-02 | Opto Device Kenkyusho:Kk | Light-emitting diode and its manufacturing method |
-
1983
- 1983-11-11 JP JP58210990A patent/JPS60103650A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60103650A (en) | 1985-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3492178B2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
| JP4922189B2 (en) | Optical element, method for manufacturing element that emits radiation, optical element, and element that emits radiation | |
| US4822536A (en) | Method of encapsulating an electronic component with a synthetic resin | |
| US7098588B2 (en) | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source | |
| US7314770B2 (en) | Method of making light emitting device with silicon-containing encapsulant | |
| EP1440481B1 (en) | Optoelectronic component | |
| KR101155231B1 (en) | Package for mounting optical semiconductor element and optical semiconductor device employing the same | |
| KR19980070526A (en) | Semiconductor light emitting device and manufacturing method thereof | |
| TW200307726A (en) | Hardenable composition, hardening product, process for producing the same and light emitting diode sealed with the hardening product | |
| CN1439175A (en) | Opto electronic component and method for the production thereof | |
| US20070092737A1 (en) | Method of making light emitting device with silicon-containing encapsulant | |
| JP4763122B2 (en) | Light emitting diode and manufacturing method thereof | |
| JP2007131677A (en) | Epoxy resin adhesive composition and adhesive for optical semiconductor using it | |
| JP4301905B2 (en) | Thermosetting resin composition, light emitting diode having light emitting element sealed with the thermosetting resin composition, and color conversion type light emitting diode | |
| JP2003073452A (en) | Epoxy resin for ultraviolet light-emitting element and epoxy resin material | |
| JP2003152229A (en) | Semiconductor light emitting device | |
| JPH0329180B2 (en) | ||
| JP3876251B2 (en) | Thermosetting resin composition and light emitting diode using the composition as sealant | |
| JPH0462188B2 (en) | ||
| JP4433876B2 (en) | Epoxy resin composition and adhesive for optical semiconductor using the same | |
| JP2003124529A (en) | Light emitting diode and its forming method | |
| JP3266680B2 (en) | Light emitting diode manufacturing method | |
| KR100712876B1 (en) | Light emitting diode capable of improving color uniformity and a manufacturing method thereof | |
| JP4079006B2 (en) | Epoxy resin composition and adhesive for optical semiconductor using the same | |
| JP3969661B2 (en) | Thermosetting resin composition and light emitting diode using the composition as sealant |