JPS55157278A - Photo coupling device - Google Patents

Photo coupling device

Info

Publication number
JPS55157278A
JPS55157278A JP6537979A JP6537979A JPS55157278A JP S55157278 A JPS55157278 A JP S55157278A JP 6537979 A JP6537979 A JP 6537979A JP 6537979 A JP6537979 A JP 6537979A JP S55157278 A JPS55157278 A JP S55157278A
Authority
JP
Japan
Prior art keywords
light emitting
coupling device
recieving
light
photo coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6537979A
Other languages
Japanese (ja)
Other versions
JPS5915391B2 (en
Inventor
Hidekazu Awaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP54065379A priority Critical patent/JPS5915391B2/en
Publication of JPS55157278A publication Critical patent/JPS55157278A/en
Priority to US06/383,330 priority patent/US4412135A/en
Publication of JPS5915391B2 publication Critical patent/JPS5915391B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain a photo coupling device of excellent anti-humidity and anti- thermal stress by utilizing excellent anti-humidity characteristic of phenol hardened epoxy resin when a photo coupling device in which a light emitting element and a light recieving element are disposed to face each other is fabricated. CONSTITUTION:Both an infrared light emitting diode 2 such as GaAs, etc. which has a peak value at wavelength of 940mmu and a light recieving element 3 are respectively bonded to lead wires 1, 1' both electrically and mechanically. These light emitting device 2 and light recieving device 3 are wrapped by transfer molding of phenol hardened epoxy resin which is mixed with a filler such as fused silica or glass fiber as the first process, and next thereto they are covered up by transfer molding of opaque resin 7 which contains enough quantily of same filler and furthermore coloring matter such as carbon black.
JP54065379A 1979-03-23 1979-05-25 optical coupling device Expired JPS5915391B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP54065379A JPS5915391B2 (en) 1979-05-25 1979-05-25 optical coupling device
US06/383,330 US4412135A (en) 1979-03-23 1982-05-28 Photo coupler device molding including filler particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54065379A JPS5915391B2 (en) 1979-05-25 1979-05-25 optical coupling device

Publications (2)

Publication Number Publication Date
JPS55157278A true JPS55157278A (en) 1980-12-06
JPS5915391B2 JPS5915391B2 (en) 1984-04-09

Family

ID=13285273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54065379A Expired JPS5915391B2 (en) 1979-03-23 1979-05-25 optical coupling device

Country Status (1)

Country Link
JP (1) JPS5915391B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118164A (en) * 1982-01-06 1983-07-14 Nec Corp Photoelectric semiconductor device
JPS6314457A (en) * 1986-07-04 1988-01-21 Nitto Electric Ind Co Ltd Optical semiconductor device
JPS63104487A (en) * 1986-10-22 1988-05-09 Nitto Electric Ind Co Ltd Optical semiconductor device
JPS63211638A (en) * 1988-01-08 1988-09-02 Nec Home Electronics Ltd Manufacture of resin seal type semiconductor device
JPH02105471A (en) * 1988-10-13 1990-04-18 Nec Corp Optical coupling semiconductor device
JP2006190753A (en) * 2005-01-05 2006-07-20 Tokai Carbon Co Ltd Carbon black for shielding light receiving/emitting element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118164A (en) * 1982-01-06 1983-07-14 Nec Corp Photoelectric semiconductor device
JPS6314457A (en) * 1986-07-04 1988-01-21 Nitto Electric Ind Co Ltd Optical semiconductor device
JPS63104487A (en) * 1986-10-22 1988-05-09 Nitto Electric Ind Co Ltd Optical semiconductor device
JPS63211638A (en) * 1988-01-08 1988-09-02 Nec Home Electronics Ltd Manufacture of resin seal type semiconductor device
JPH02105471A (en) * 1988-10-13 1990-04-18 Nec Corp Optical coupling semiconductor device
JP2006190753A (en) * 2005-01-05 2006-07-20 Tokai Carbon Co Ltd Carbon black for shielding light receiving/emitting element

Also Published As

Publication number Publication date
JPS5915391B2 (en) 1984-04-09

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