JPS6314457A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS6314457A JPS6314457A JP61158373A JP15837386A JPS6314457A JP S6314457 A JPS6314457 A JP S6314457A JP 61158373 A JP61158373 A JP 61158373A JP 15837386 A JP15837386 A JP 15837386A JP S6314457 A JPS6314457 A JP S6314457A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- resin composition
- light
- amorphous silica
- primary sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000007789 sealing Methods 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 21
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 19
- 239000011342 resin composition Substances 0.000 claims abstract description 19
- 239000011256 inorganic filler Substances 0.000 claims abstract description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 abstract description 22
- 239000011347 resin Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 6
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical class FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010299 mechanically pulverizing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、発光ダイオードやフォトダイオード等の光
半導体素子を樹脂組成物で一次封止および二次封止して
なる光半導体装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an optical semiconductor device in which an optical semiconductor element such as a light emitting diode or a photodiode is primarily sealed and secondarily sealed with a resin composition. be.
一般に、光半導体装置は、光透過型樹脂組成物で光半導
体素子を一次封止し、さらに外乱光による誤動作を防ぐ
ため、非光透過型樹脂組成物で二次封止することにより
構成されている。このような構造の光半導体装置を図面
に示す。図において、１．２は光半導体素子、３はそれ
らのリード、４は光透過型樹脂層、５は非光透過型樹脂
層である。上記光透過型樹脂層４および非光透過型樹脂
層５がプラスチックパッケージを構成する。上記図面の
装置において、外部リード３は銅系材料や鉄系材料で構
成されており、また、光半導体素子１．２自体も熱膨張
係数が小さい。したがって、樹脂層と素子等との熱膨張
係数の差に起因する封止時の熱応力を小さくするため、
一次封止樹脂層である光透過型樹脂層４および二次封止
樹脂層である非光透過型樹脂層５の双方とも熱膨張係数
を小さくすることが求められており、多量の無機質充填
剤が配合されている。Generally, an optical semiconductor device is constructed by first sealing an optical semiconductor element with a light-transmitting resin composition, and then secondly sealing it with a non-light-transmitting resin composition to prevent malfunction due to ambient light. There is. An optical semiconductor device having such a structure is shown in the drawings. In the figure, 1.2 is an optical semiconductor element, 3 is a lead thereof, 4 is a light-transmitting resin layer, and 5 is a non-light-transmitting resin layer. The light-transmitting resin layer 4 and the non-light-transmitting resin layer 5 constitute a plastic package. In the device shown in the above drawing, the external lead 3 is made of a copper-based material or an iron-based material, and the optical semiconductor element 1.2 itself also has a small coefficient of thermal expansion. Therefore, in order to reduce the thermal stress during sealing caused by the difference in thermal expansion coefficient between the resin layer and the element,
Both the light-transmitting resin layer 4, which is the primary sealing resin layer, and the non-light-transmitting resin layer 5, which is the secondary sealing resin layer, are required to have a small coefficient of thermal expansion, and a large amount of inorganic filler is required. is blended.
通常、上記二次封止樹脂層である非光透過型樹脂層５で
は、無機質充填剤として高純度のシリカ粉末（破砕タイ
プ）が用いられている。しかしながら、一次封止樹脂層
である光透過型樹脂層４に上記破砕タイプのシリカ粉末
を使用すると、光が樹脂中に進入しても乱反射し光透過
性が悪くなって光信号の伝達能力が低くなるという問題
が生じている。Usually, in the non-light-transmitting resin layer 5, which is the secondary sealing resin layer, high-purity silica powder (crushed type) is used as an inorganic filler. However, if the above-mentioned crushed type silica powder is used in the light-transmissive resin layer 4, which is the primary sealing resin layer, even if light enters the resin, it will be diffusely reflected, resulting in poor light transmittance and the ability to transmit optical signals. The problem is that it is getting lower.
この発明は、このような事情に鑑みなされたもので、一
次封止樹脂層の光透過性の良好な光半導体装置の提供を
その目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide an optical semiconductor device in which a primary sealing resin layer has good light transmittance.
上記の目的を達成するため、この発明の光半導体装置は
、光半導体素子を光透過型樹脂組成物で一次封止し、非
光透過型樹脂組成物で二次封止してなる光半導体装置で
あって、一次封止に使用する上記光透過型樹脂組成物が
、エポキシ樹脂を主要成分とし、無機質充填剤としてワ
ーデルの球形度で０．５〜１．０の球形度をもつ無定形
シリカ粉末を含有しているという構成をとる。In order to achieve the above object, an optical semiconductor device of the present invention is an optical semiconductor device in which an optical semiconductor element is first sealed with a light-transmitting resin composition and secondarily sealed with a non-light-transmitting resin composition. The above-mentioned light-transmitting resin composition used for primary sealing contains an epoxy resin as a main component and amorphous silica having a Wardell sphericity of 0.5 to 1.0 as an inorganic filler. It has a structure that contains powder.
すなわち、本発明者は、一次封止樹脂層に含有させる無
機質充填剤と二次封止樹脂層に含有させる無機質充填剤
とを同種のものにすると、両層の熱膨張係数が近似する
ようになって両層の界面からの剥離の防止に有利である
という前提のもとにシリカ粉末を中心に研究を重ねた。That is, the present inventor has found that by using the same type of inorganic filler to be contained in the primary sealing resin layer and the inorganic filler to be contained in the secondary sealing resin layer, the thermal expansion coefficients of both layers are approximated. Therefore, we conducted extensive research focusing on silica powder, based on the premise that it is advantageous in preventing peeling from the interface between the two layers.
その結果、ワーデルの球形度で０．５〜１．０の球形度
を有する無定形シリカ粉末を使用すると所期の目的を達
成しうろことを見いだしこの発明に到達した。As a result, it was found that the desired object could be achieved by using an amorphous silica powder having a Wardell sphericity of 0.5 to 1.0, and the present invention was achieved.
この発明の光半導体装置は、一次封止樹脂層を構成する
光透過型樹脂組成物としてエポキシ樹脂を主要成分とし
、無機質充填剤としてワーデルの球形度で０．５〜１．
０の球形度を有する無定形シリカ粉末を用いて得られる
。The optical semiconductor device of the present invention has an epoxy resin as a main component as a light-transmitting resin composition constituting the primary sealing resin layer, and has a Wardell sphericity of 0.5 to 1.0 as an inorganic filler.
Obtained using an amorphous silica powder with a sphericity of 0.
上記無定形シリカ粉末は、ワーデルの球形度で０．５〜
１．０の球形度のものであることが必要である。このよ
うな無定形シリカは、溶融固化したインゴット状の無定
形シリカを機械粉砕し、得られた機械粉砕物のうち、ワ
ーデルの球形度で０．５〜１．０、好ましくは０．７〜
１、Ｏのものを選択することにより得ることができる。The above amorphous silica powder has a Wardell sphericity of 0.5 to
It is necessary that the sphericity is 1.0. Such amorphous silica is obtained by mechanically pulverizing melted and solidified ingot-like amorphous silica, and the resulting mechanically pulverized product has a Wardell sphericity of 0.5 to 1.0, preferably 0.7 to 1.0.
1, can be obtained by selecting O.
ここで、ワーデルの球形度（化学工学便覧、丸善株式会
社発行参照）とは、粒子の球形度を、（粒子の投影面積
に等しい円の直径）／（粒子の投影像に外接する最小円
の直径）で測る指数で、この指数が１．０に近いほど真
球体に近い粒子であることを意味する。そして、この発
明において使用する無定形シリカ粉末をワーデルの球形
度で０．５〜１．０の球形度のものに限定する理由は、
つぎのとおりである。すなわち、球形度が０．５未満の
ものは異形状で鋭利な突片を持つことが多く、そのよう
なものを含むエポキシ樹脂組成物で光半導体素子を一次
封止すると、鋭利な突片を持つシリカ粉末により光が乱
反射し目的とする光信号伝達機能が得られなくなるから
である。Here, Wardell's sphericity (see Chemical Engineering Handbook, published by Maruzen Co., Ltd.) is defined as the sphericity of a particle (diameter of a circle equal to the projected area of the particle)/(diameter of the smallest circle circumscribing the projected image of the particle). The closer this index is to 1.0, the closer the particle is to a perfect sphere. The reason why the amorphous silica powder used in this invention is limited to those with a Wardell sphericity of 0.5 to 1.0 is as follows.
It is as follows. In other words, those with a sphericity of less than 0.5 often have irregularly shaped and sharp protrusions, and when an optical semiconductor element is primarily sealed with an epoxy resin composition containing such sphericity, the sharp protrusions are removed. This is because light is diffusely reflected by the silica powder, making it impossible to obtain the desired optical signal transmission function.
上記のような無定形シリカ粉末は光透過型樹脂組成物全
体の５０〜８５％（重量、以下同じ）使用することが好
ましい。その使用量が５０％未満になるとエポキシ樹脂
組成物にチキソトロピー物性を付与しにくく、したがっ
て、成形作業性に支障を生じると同時に応力歪みの低減
効果が不充分になるからである。逆に、使用量が８５％
を超えるとトランスファーモールド成形等の成形作業に
問題が生じ、また被膜形成能が低下する傾向がみられる
からである。上記のような特定の球形度をもつ無定形シ
リカ粉末は、粒径が１５０１１ｍ以下のものであること
が好ましく、より好ましいのは平均粒径が１６μｍ程度
のものである。すなわち、粒径が１５０μｍを超えると
エポキシ樹脂組成物の未充填部分が生じ、成形作業性に
問題が生じると同時に不良品の発生率が高くなるからで
ある。The amorphous silica powder as described above is preferably used in an amount of 50 to 85% (by weight, the same applies hereinafter) of the entire light-transmissive resin composition. If the amount used is less than 50%, it will be difficult to impart thixotropic properties to the epoxy resin composition, which will impede molding workability and at the same time, the effect of reducing stress strain will become insufficient. On the other hand, the amount used is 85%
This is because if it exceeds 100%, problems will occur in molding operations such as transfer molding, and the film forming ability will tend to decrease. The amorphous silica powder having a specific sphericity as described above preferably has a particle size of 15011 m or less, and more preferably has an average particle size of about 16 μm. That is, if the particle size exceeds 150 μm, unfilled portions of the epoxy resin composition will occur, causing problems in molding workability and at the same time increasing the incidence of defective products.
なお、上記ワーデルの球形度で０．５〜１．０の球形度
を有する無定形シリカ粉末の一部に代えて、従来から使
用されている他の無機質充填剤を使用してもよい。この
場合、上記他の無機質充填剤の多量使用は、上記無定形
シリカ粉末の使用の効果を損なうため、できるだけ少量
にとどめることが好適である。Note that in place of a part of the amorphous silica powder having a Wardell sphericity of 0.5 to 1.0, other conventionally used inorganic fillers may be used. In this case, the use of a large amount of the other inorganic filler impairs the effect of using the amorphous silica powder, so it is preferable to keep it to a small amount as much as possible.
一次封止に使用する光透過型樹脂組成物の主要成分とな
るエポキシ樹脂は特に制限するものではなく、ノボラッ
ク系、ビスフェノール系、環式脂肪族系の各種のものが
あげられる。また、難燃性を付与するために、これらに
臭素や塩素等のハロゲン原子を導入したものも使用の対
象となる。好ましいのは作業性等の観点からフェノール
ノボラック、タレゾールノボラック等のノボラック系の
ものである。これらのものは、エポキシ当量が１７５〜
２５０、軟化点６０〜１３０℃であることが好適である
。すなわち、上記の値を有するものは良好なプラスチッ
クパッケージを生成しうるからである。The epoxy resin that is the main component of the light-transmitting resin composition used for primary sealing is not particularly limited, and various types such as novolak, bisphenol, and cycloaliphatic resins can be mentioned. Further, in order to impart flame retardancy, those into which halogen atoms such as bromine or chlorine are introduced are also candidates for use. Preferred are novolacs such as phenol novolak and talesol novolak from the viewpoint of workability. These have an epoxy equivalent of 175 to
250 and a softening point of 60 to 130°C. That is, those having the above values can produce good plastic packages.
上記エポキシ樹脂とともに用いられる硬化剤は、上記エ
ポキシ樹脂を硬化させるものであり、通常使用されてい
る、１分子中に２個以上の水酸基を有するフェノールノ
ボラック系硬化剤、タレゾールノボラック系硬化剤等が
用いられる。特に好適なのはフェノールノボラック系硬
化剤である。The curing agent used with the epoxy resin is one that cures the epoxy resin, and includes commonly used phenol novolac curing agents having two or more hydroxyl groups in one molecule, talesol novolac curing agents, etc. is used. Particularly suitable are phenol novolac curing agents.
アミン系硬化剤は毒性やライフが短（なるという難点を
有し、酸無水物系硬化剤は成形性に問題を有しており、
その使用は好ましくない。Amine-based curing agents have the disadvantages of toxicity and short life, while acid anhydride-based curing agents have problems with moldability.
Its use is not recommended.
なお、この発明で用いるエポキシ樹脂組成物には、上記
のエポキシ樹脂、硬化剤および上記無定形シリカ粉末に
加え、通常、内部離型剤、硬化促進剤およびその他の添
加剤が適宜配合される。In addition to the above-mentioned epoxy resin, curing agent, and amorphous silica powder, the epoxy resin composition used in the present invention usually contains an internal mold release agent, a curing accelerator, and other additives as appropriate.
上記内部離型剤としては、ステアリン酸、バルミチン酸
等の長鎖カルボン酸、ステアリン酸亜鉛、ステアリン酸
カルシウム等の長鎖カルボン酸の金属塩、カルナバワッ
クス、モンタンワックス等のワックス類があげられる。Examples of the internal mold release agent include long-chain carboxylic acids such as stearic acid and valmitic acid, metal salts of long-chain carboxylic acids such as zinc stearate and calcium stearate, and waxes such as carnauba wax and montan wax.
硬化促進剤としては、各種イミダゾール類や三級アミン
類、フェノール類、有機金属化合物あるいは三フッ化ホ
ウ素化合物があげられる。また、その他の添加剤として
、β−（３，４−エポキシシクロヘキシル）エチルトリ
メトキシシラン、Ｔ−グリシドキシプロビルトリメトキ
シシラン等のシランカップリング剤からなる充填剤の表
面処理剤や、酸化アンチモン、ハロゲン化合物、リン化
合物等の難燃化剤、各種顔料等があげられる。Examples of the curing accelerator include various imidazoles, tertiary amines, phenols, organometallic compounds, and boron trifluoride compounds. In addition, other additives include surface treatment agents for fillers made of silane coupling agents such as β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane and T-glycidoxypropyltrimethoxysilane, and oxidation Examples include flame retardants such as antimony, halogen compounds, and phosphorus compounds, and various pigments.
この発明に用いる一次封止用のエポキシ樹脂組成物は、
従来公知の方法で製造しうるちのであり、例えば上記エ
ポキシ樹脂と、硬化剤、上記無定形シリカ粉末、内部離
型剤、その他の添加剤を適宜に配合し、この配合物をミ
キシングロール機等の混練機に掛は加熱状態で混練して
半硬化状の樹脂組成物とし、これを室温に冷却したのち
、公知の手段によって粉砕し必要に応じて打錠すること
により得ることができる。The epoxy resin composition for primary sealing used in this invention is:
It is manufactured by a conventionally known method, for example, the above epoxy resin, a curing agent, the above amorphous silica powder, an internal mold release agent, and other additives are appropriately blended, and this mixture is processed using a mixing roll machine, etc. It can be obtained by kneading in a heated kneading machine to obtain a semi-cured resin composition, which is cooled to room temperature, and then pulverized by known means and, if necessary, tableted.
なお、一次封止に使用する上記光透過型樹脂組成物とと
もに使用する二次封止用の非光透過型樹脂組成物として
は、従来公知のものをそのまま使用することができる。In addition, as the non-light-transmitting resin composition for secondary sealing used together with the above-mentioned light-transmitting resin composition used for primary sealing, conventionally known ones can be used as they are.
このようなエポキシ樹脂組成物を用いての光半導体素子
の封止は特に限定するものではなく、通常の方法、例え
ばトランスファー成形等の公知のモールド方法により行
うことができる。Sealing of an optical semiconductor element using such an epoxy resin composition is not particularly limited, and can be carried out by a conventional method, for example, a known molding method such as transfer molding.
以上のように、この発明の光半導体装置は、一次封止樹
脂層が、ワーデルの球形度で０．５〜１．０の球形度を
もつ特殊な無定形シリカ粉末を含むエポキシ樹脂組成物
で形成されているため、光の乱反射が生じず光信号の伝
達能力が高い、したがって、高性能装置として広範囲な
展開が可能である。As described above, in the optical semiconductor device of the present invention, the primary sealing resin layer is made of an epoxy resin composition containing a special amorphous silica powder having a Wardell sphericity of 0.5 to 1.0. Because of this structure, diffused reflection of light does not occur and the optical signal transmission ability is high. Therefore, it can be widely used as a high-performance device.
つぎに、実施例について比較例と併せて説明する。Next, examples will be described together with comparative examples.
〔実施例１〜３、比較例１〜３〕
まず、各原料を下記の第１表に示す組成で配合し、この
配合物を１２０℃の熱ロールで５分間混練したのち、冷
却後粉砕し粉末状組成物とした。[Examples 1 to 3, Comparative Examples 1 to 3] First, each raw material was blended with the composition shown in Table 1 below, and this blend was kneaded for 5 minutes with heated rolls at 120 ° C., and then crushed after cooling. It was made into a powdered composition.
ついで、得られた粉末状組成物を用い、光半導体装置を
、圧カフ０ｋｇ／ｃｏ！、温度１７５℃、時間９０秒の
条件でトランスファー成形して一次封止し、ついでエポ
キシ樹脂組成物（粉末エポキシ樹脂成形材料、ＭＰ−１
０，日東電工社製）で二次封止し試験品となる装置を得
た。Then, using the obtained powder composition, an optical semiconductor device was manufactured using a pressure cuff of 0 kg/co! , a temperature of 175° C. and a time of 90 seconds were used for primary sealing, and then an epoxy resin composition (powdered epoxy resin molding material, MP-1
0, manufactured by Nitto Denko Corporation) to obtain a device to be used as a test product.
このようにして得られた実施例１〜３および比較例１〜
３の試験品装置で光透過率を測定した。Examples 1 to 3 and Comparative Examples 1 to 3 thus obtained
The light transmittance was measured using the test product device No. 3.
この結果を第１表に示す。The results are shown in Table 1.
（以下余白）
（以下余白）
第１表から明らかなように、実施別品はいずれも光透過
率が比較測高よりも著しく優れていることがわかる。(Hereinafter in the margin) (Hereinafter in the margin) As is clear from Table 1, it can be seen that the light transmittance of each of the samples according to the implementation is significantly superior to that of the comparative measurements.
図面は光半導体装置の構成図である。 The drawing is a configuration diagram of an optical semiconductor device.
Claims (1)
、非光透過型樹脂組成物で二次封止してなる光半導体装
置であつて、一次封止に使用する上記光透過型樹脂組成
物が、エポキシ樹脂を主要成分とし、無機質充填剤とし
てワーデルの球形度で０．５〜１．０の球形度をもつ無
定形シリカ粉末を含有していることを特徴とする光半導
体装置。(1) An optical semiconductor device formed by first sealing an optical semiconductor element with a light-transmitting resin composition and secondarily sealing it with a non-light-transmitting resin composition, wherein the above-mentioned light-transmitting element is used for the primary sealing. An optical semiconductor characterized in that the mold resin composition contains an epoxy resin as a main component and amorphous silica powder having a Wardell sphericity of 0.5 to 1.0 as an inorganic filler. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15837386A JP2523512B2 (en) | 1986-07-04 | 1986-07-04 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15837386A JP2523512B2 (en) | 1986-07-04 | 1986-07-04 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6314457A true JPS6314457A (en) | 1988-01-21 |
| JP2523512B2 JP2523512B2 (en) | 1996-08-14 |
Family
ID=15670282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15837386A Expired - Lifetime JP2523512B2 (en) | 1986-07-04 | 1986-07-04 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2523512B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006114879A (en) * | 2004-09-16 | 2006-04-27 | Sharp Corp | Optical semiconductor device and electronic apparatus |
| JP2007180275A (en) * | 2005-12-28 | 2007-07-12 | Sharp Corp | Optical semiconductor device and electronic device |
| US7425727B2 (en) | 2004-09-16 | 2008-09-16 | Sharp Kabushiki Kaisha | Optical semiconductor device, method for fabricating the same, lead frame and electronic equipment |
| CN102548725A (en) * | 2009-09-24 | 2012-07-04 | 旭硝子株式会社 | Mold release film, and method for manufacturing light emitting diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55157278A (en) * | 1979-05-25 | 1980-12-06 | Sharp Corp | Photo coupling device |
| JPS594630A (en) * | 1982-06-30 | 1984-01-11 | Matsushita Electric Works Ltd | Resin composition |
-
1986
- 1986-07-04 JP JP15837386A patent/JP2523512B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55157278A (en) * | 1979-05-25 | 1980-12-06 | Sharp Corp | Photo coupling device |
| JPS594630A (en) * | 1982-06-30 | 1984-01-11 | Matsushita Electric Works Ltd | Resin composition |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006114879A (en) * | 2004-09-16 | 2006-04-27 | Sharp Corp | Optical semiconductor device and electronic apparatus |
| US7425727B2 (en) | 2004-09-16 | 2008-09-16 | Sharp Kabushiki Kaisha | Optical semiconductor device, method for fabricating the same, lead frame and electronic equipment |
| JP2007180275A (en) * | 2005-12-28 | 2007-07-12 | Sharp Corp | Optical semiconductor device and electronic device |
| CN102548725A (en) * | 2009-09-24 | 2012-07-04 | 旭硝子株式会社 | Mold release film, and method for manufacturing light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2523512B2 (en) | 1996-08-14 |
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