JP3353847B2 - Resin sealing resin composition and resin sealing type semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation and a resin encapsulation type semiconductor device using the same.
The present invention relates to a novel resin composition for semiconductor encapsulation that provides excellent characteristics such as flexibility, flame retardancy, and moisture resistance with various types of resin systems, and a resin encapsulation type semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, epoxy resins have been widely used in resin-encapsulated semiconductor devices because of their well-balanced mechanical properties, heat resistance, and moldability with high productivity. But,
As semiconductor devices have become thinner and denser, and surface mounting methods have become more widespread, the characteristics required for semiconductor devices have become more stringent, and accordingly, the above-mentioned characteristics and more functions have been required for epoxy resins. Was. Modification methods of epoxy resins that have been taken to meet such requirements include, specifically, introduction of bromine substituents, denaturation and alloying with a flexibilizing agent, and increase in functional group density. However, reforming by these techniques is approaching its limit. Furthermore, in recent years, from the viewpoint of environmental protection, reduction of the addition amount of halide, which has been indispensable for maintaining flame retardancy, has been promoted. From this viewpoint, a new resin composition has been demanded. ing.

[0003]

Some attempts have been made to overcome the above problems. For example, in JP-A-2-3445, a composition using a polyimide resin is exemplified as a resin composition for semiconductor encapsulation.
However, the polyimide resin is not only insufficient in flexibility and adhesiveness but also extremely expensive and poor in moldability. As described above, a resin system having characteristics exceeding the epoxy resin at a practical level in semiconductor encapsulation applications has not yet been found.

As a result of intensive studies to solve such problems, the present inventors have completed the invention of the following novel resin composition for semiconductor encapsulation and a resin-encapsulated semiconductor device using the same. That is, the present invention provides (A) any of the following formulas:
100 parts by Kano polyfunctional dihydrobenzoxazine compounds, (B) melting silicon dioxide powder 200 to 1200 parts by weight and (C) a curing accelerator, release agent, at least one selected from the adhesion-imparting agents and coloring agents A resin composition for semiconductor encapsulation consisting of 0.5 to 35 parts by weight of an additive consisting of
And a resin-encapsulated semiconductor device characterized in that a semiconductor element is encapsulated with this resin composition.

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[0005]

[0006]

[0007] These polyfunctional dihydro base Nzookisajin compounds undergo ring-opening polymerization reaction by a suitable heating to form a crosslinked structure having excellent properties without emitting volatiles at all.

[0008]

[0009]

[0010]

[0011]

These polyfunctional dihydrobenzoxazines
Two or more compounds can be used in combination. Further, these polyfunctional dihydrobenzoxazine compounds are previously subjected to 80 to 180 ° C, preferably 120 to 160 ° C.
By performing a heat treatment at 30 ° C. for 30 to 300 minutes, a part thereof can be pre-polymerized to control the curing speed and melt viscosity during molding.

In the present invention, a fusible silicon dioxide powder is blended to reinforce the resin composition and reduce the coefficient of thermal expansion. As this fusible silicon dioxide powder,
Either a spherical shape or a crushed shape can be used, or both can be used in combination. The particle size is suitably from 0.5 to 30 μm, and if it is outside of this range, the expected effect of reinforcing and reducing the coefficient of thermal expansion is not exhibited, or the melt viscosity of the composition is significantly increased and molding becomes difficult. There is.

From the same point of view, the content of the fusible silicon dioxide powder in the composition is 200 to 1200 parts by weight, preferably 300 to 600 parts by weight, based on 100 parts by weight of the polyfunctional dihydrobenzoxazine. It is.

[0015] The resin composition of the present invention comprises, in addition to the polyfunctional dihydrobenzoxazine compound and the fusible silicon dioxide powder, at least one selected from a curing accelerator, a release agent, an adhesion-imparting agent and a coloring agent. Agent. These additives are used to increase the curing speed of the polyfunctional dihydrobenzoxazine compound, to release the cured product from the mold at the time of molding, and to make the resin (polyfunctional dihydrobenzoxazine compound) / filler (meltable silicon dioxide powder). It is blended for the purpose of increasing the interfacial adhesive strength between them. As the curing accelerator, for example, a mixture of one or more of polyfunctional phenols such as catechol and bisphenol A and sulfonic acids such as p-toluenesulfonic acid and p-phenolsulfonic acid is used as a release agent. Is, for example, montanic acid ester wax, carnauba wax, etc., as an adhesion imparting agent, for example, a silane coupling agent such as trimethoxy epoxy silane, and as a coloring agent, for example, carbon black or the like is used. it can. If necessary, antimony trioxide or the like may be further used as an additive as a flame retardant improver.

In addition to the additives exemplified above, rubber particles for improving flexibility and halides for further increasing flame retardancy can be added as additives. This is sufficiently achieved only by the polyfunctional dihydrobenzoxazine compound, and undesirably increases problems such as contamination of the mold and by-products of halogen compounds having high toxicity during combustion.

It is preferable to use the minimum amount of the above additives as long as their functions can be sufficiently exhibited. Specifically, the total amount of the additives is based on 100 parts by weight of the polyfunctional dihydrobenzoxazine compound. 0.5 to 35 parts by weight, preferably 2 to 20 parts by weight.

The present invention also provides a resin-sealed semiconductor device in which a semiconductor element is sealed with the above resin composition. The method for manufacturing the above resin-encapsulated semiconductor device is not particularly limited, but usually, the three components are kneaded at 60 to 120 ° C. with a heating roll or the like to prepare a resin composition, and then the semiconductor is placed in a mold. The element was arranged, and then the obtained resin composition was heated at 180 to 220 ° C. at a molding pressure of 30 to 120 kgf /
It is obtained by transfer molding in cm ² for 3 to 10 minutes. After the molding, the resin-encapsulated semiconductor device having better characteristics can be obtained by further post-curing at 180 to 220 ° C. for 5 to 120 minutes.

[0019]

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to Examples of the present invention and Comparative Examples thereof, but the present invention is not limited to these Examples.

Examples 1 to 7 and Comparative Examples 1 to 3 Raw materials were mixed according to the composition shown in Table 1 and kneaded at 80 ° C. for 10 minutes using a twin-screw roll. A resin composition was prepared. Next, the semiconductor element was placed in the mold cavity of the transfer molding machine, and
6, at 200 ° C., 50 kgf / cm ² for 8 minutes,
In Comparative Examples 1 to 3, 175 ° C and 70 kgf / c
Each resin composition was transferred and molded in the above mold under the conditions of m ² and 90 seconds, and QFP54pin (external size 20 × 14 × 2)
mm, a lead frame material of 42 alloy, and a semiconductor element size of 8 × 10 mm) were obtained. Comparative Examples 1 to
In No. 3, post-curing was performed at 175 ° C. for 6 hours after the transfer molding.

Further, in order to know basic properties such as mechanical properties, heat resistance, flame retardancy and adhesiveness of the resin composition, a test piece which is a plate-like cured product was prepared under the same conditions as described above.

The properties of the cured product are measured in accordance with JIS-K6911 for the flexural strength as a mechanical property, the glass transition temperature is measured in accordance with a thermomechanical property tester (TMA), and the flame retardancy is measured in accordance with UL-94. did.

The adhesive property was 30 μm at the time of molding.
Thick aluminum foil was formed on one side and the peel strength was measured and evaluated. The flexibility of the molded article was determined by conducting a heat cycle test in which the test piece was kept at -55 ° C and 150 ° C for 30 minutes, and the crack occurrence rate (specimen 10
The number of cracked test pieces per piece) was determined and evaluated. Further, the molded semiconductor device is kept at 85 ° C. and 85%
After moisture absorption under RH conditions, heat treatment was performed at 215 ° C. for 90 seconds (reflow flux test) to determine the rate of occurrence of package cracks (the number of semiconductor devices having package cracks per 10 semiconductor devices). The moisture resistance reliability of the device was evaluated.

Table 2 shows the evaluation results.

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[Table 1]

[0026]

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[0027]

[Table 2]

[0028]

By using the resin composition for encapsulating a semiconductor of the present invention, flexibility, heat resistance and moisture resistance reliability comparable to or surpassing that of the conventional epoxy resin composition can be obtained.
Flame retardancy can be ensured without using a halogen-based flame retardant. Similarly, a resin-encapsulated semiconductor device using this resin composition for semiconductor encapsulation also has very good flexibility, heat resistance, and moisture resistance reliability.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-49-47378 (JP, A) JP-A-57-208163 (JP, A) JP-A-62-74924 (JP, A) JP-A-4- 68017 (JP, A) Eiichi Taita, "Organic Materials for Electronics-Electronic Technology Innovation and Material Development-", CMC Corporation, 1982 (58) Fields investigated (Int. Cl. ⁷ , DB name) C08G 73/00-73/26 C08L 79/00-79/08

Claims (2)

(57) [Claims] (A) 100 parts by weight of a polyfunctional dihydrobenzoxazine compound represented by the following formula, (B) 200 to 1200 parts by weight of fusible silicon dioxide powder, (C) a curing accelerator, a release agent, Additive of at least one selected from adhesiveness-imparting agents and coloring agents 0.5 to 35
A resin composition for semiconductor encapsulation consisting of parts by weight. Embedded image 2. A resin-encapsulated semiconductor device, wherein a semiconductor element is encapsulated with the resin composition for encapsulating a semiconductor according to claim 1 .