JPH10176099A - Epoxy resin composition and resin-sealed type semiconductor device by using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition capable of manifesting an excellent fluidity and adhesion, and reducing voids in a molding material, and useful for sealing of a semiconductor device by including an epoxy resin, a hardener, a specific polysiloxane and an inorganic filler. SOLUTION: This epoxy resin composition comprises (A) an epoxy resin, (B) a hardening agent such as novolak type phenol resin, (C) a hardening promoter such as phosphorus-based one, (D) a compound of formula I at least one of R<1> is a group of formula II [at least one of R<2> is an alkyl or an aryl, the balance is H, a (cyclo)alkyl, an aryl or a halogen) X is a divalent organic group]; (n) is 1-1,000}, and (E) an inorganic filler. The composition preferably includes 0.5-10wt.% component D based on the total of the components A and B.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition suitably used as a sealing material for a semiconductor element, and a resin-sealed semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, transistors, ICs and L
Epoxy resins are widely used as sealing materials for various devices such as SI. This is because epoxy resins are inexpensive and have high productivity, and are balanced in various properties such as electrical properties, moisture resistance, heat resistance, mechanical properties, and adhesiveness to inserts.

In recent years, semiconductor chips have tended to increase in size as semiconductor devices have become more highly integrated, and as a result, the size of packages for resin-encapsulated semiconductor devices has increased, while the mounting space has increased. With the miniaturization of, the tendency of thinning has become stronger. Further, in response to demands for high-density mounting of electronic components and automation of an assembly process, a surface mounting method is becoming the mainstream as a semiconductor device mounting method instead of the conventional insertion method. In this mounting method, when a package is mounted on a circuit board, processes such as infrared reflow, vapor phase reflow, and solder immersion are employed.

In these processes, the entire package is exposed to a high temperature (200 to 260 ° C.). Therefore, in a conventional resin-encapsulated semiconductor device, the resin and the bed are separated from each other by the difference in thermal expansion between the resin and the lead frame material. Separation occurs, and a phenomenon occurs that moisture existing in the resin is rapidly vaporized. As a result, the resin could not withstand the high water vapor pressure inside the package, causing the resin to crack.

[0005] In order to avoid such inconvenience, the epoxy resin used for encapsulating a semiconductor element must have characteristics such as low stress and excellent solder reflow resistance. Further, as the chip becomes larger and the package becomes thinner as described above, the sealing resin is also required to have high fluidity and excellent moldability. In order to satisfy these characteristics, in recent years, low-viscosity epoxy resins such as biphenyl-type epoxy resins have been used, and by increasing the filling of fillers, the resin composition has low moisture absorption and low thermal expansion to achieve moisture resistance and Improved reflow crack resistance.

[0006]

As described above, although various characteristics are required for a resin for encapsulating a semiconductor element, the moisture resistance and the resistance of a semiconductor device manufactured using a conventional resin are high. Reflow cracking is not yet sufficient. In addition, due to the lower viscosity of the matrix resin and the higher filling of the filler, the occurrence of defects (cavities) in the package increases, and the reliability of the semiconductor device is reduced.

Accordingly, the present invention provides an epoxy resin composition which is excellent in fluidity and adhesion to a lead frame, has few voids in a molded product, and has a high thermal shock resistance, moisture resistance reliability and reflow crack resistance. It is an object of the present invention to provide a stop semiconductor device.

[0008]

In order to solve the above problems, the present invention provides (a) an epoxy resin, (b) a curing agent, (c) a curing accelerator, and (d) a compound represented by the following general formula ( An epoxy resin composition characterized by containing the polysiloxane represented by 1) and (e) an inorganic filler.

[0009]

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(In the above formula (1), at least one of R ¹ is a substituent represented by the following formula (2):
The rest may be the same or different and are substituents selected from the group consisting of a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, and a halogen atom. Also, n
Is an integer of 1 to 1000. )

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(In the general formula (2), at least one of R ² is an alkyl group or an aryl group, and the rest may be the same or different, and include a hydrogen atom, an alkyl group, a cycloalkyl group, and an aryl group. , And a substituent selected from the group consisting of a halogen atom, and X is a divalent organic group.) The present invention also includes a semiconductor element and a resin layer that seals the semiconductor element. A resin-encapsulated semiconductor device is provided in which the resin layer uses a cured product of the above-described resin composition.

Hereinafter, the present invention will be described in detail.

As the epoxy resin as the component (a) which can be blended in the epoxy resin composition of the present invention, any compound having two or more epoxy groups in one molecule can be used. There is no particular limitation. In particular,
Bisphenol A epoxy resin, bisphenol F epoxy resin, bislenol S epoxy resin, biphenyl epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, naphthol type novolak epoxy resin, bisphenol A novolak epoxy resin Epoxidized tris (hydroxyphenyl) alkane, epoxidized tetra (hydroxyphenyl) alkane, 2,2 ', 4,4'- obtained by epoxidizing a condensation product of phenol, alkylphenol and hydroxybenzaldehyde
Tetraglycidoxybenzophenone, triglycidyl ether of paraaminophenol, polyalkaneglycidyl ether, 1,3,5-triglycidyl ether benzene, 1,2,3-triglycidyl ether benzene,
Glycidyl ether of phenol aralkyl resin and the like can be mentioned. These epoxy resins can be used alone or
A mixture of more than one species can be used.

In particular, when an epoxy resin represented by the following general formula (3) or (4) is blended, it is possible to prepare an epoxy resin composition having a high filler content. Therefore, by using such a resin composition, the moisture resistance and the reflow crack resistance of the semiconductor device can be improved.

[0015]

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In the above formula, R ¹¹ may be the same or different and is a hydrogen atom; an alkyl group such as a methyl group, an ethyl group or a propyl group; a cycloalkyl group such as a cyclohexyl group or a cyclopentyl group; a phenyl group or a naphthyl Group,
An aryl group such as an anisyl group; selected from the group consisting of halogen atoms. The A ¹ is a divalent organic group, e.g., -O -, - S -, - Se -, - Te- and include groups shown below.

[0017]

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The epoxy resin as described above can be appropriately selected depending on the combination with the component (b) which is a curing agent. The amount of the epoxy resin in the resin composition can be appropriately adjusted according to the melt viscosity or the coefficient of thermal expansion of the molded product, but is usually about 3 to 20% by weight of the entire resin composition. It is.

In the epoxy resin composition of the present invention,
Examples of the curing agent as the component (b) include a phenol resin, and specifically, a phenol novolak resin, a cresol novolak resin, a nonylphenol novolak resin, a bisphenol F type novolak resin, a bisphenol A type novolak resin, and a naphthol type novolak resin. Novolak-type phenolic resins such as; phenol aralkyl resins of condensation polymerization compounds of 2,2'-dimethoxy-p-xylene and phenol monomers, biphenyl-type phenol aralkyl resins, naphthalene-type phenol aralkyl resins, dicyclopentadiene-phenol polymers, Hydroquinone, resorcinol, catechol, 1,2,3
One or more phenol resins such as trihydroxybenzene and 1,3,5-trihydroxybenzene can be used. In particular, the following general formula (5)
Alternatively, it is preferable to use a phenol resin represented by (6) because heat resistance can be improved.

[0020]

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In the above formula, R ¹² may be the same or different and each represents a hydrogen atom; a methyl group, an ethyl group,
An alkyl group such as a propyl group; a cycloalkyl group such as a cyclohexyl group and a cyclopentyl group; an aryl group such as a phenyl group, a naphthyl group and an anisyl group; a halogen atom; and A ² is a divalent organic group. In addition, j is an integer of 0 to 3, and k is an integer of 1 to 50. The divalent organic group which can be introduced as A ² includes, for example, the following organic groups.

[0022]

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In the epoxy resin composition of the present invention, the mixing ratio of the epoxy resin component and the phenol resin component is determined by the ratio of the number of phenolic hydroxyl groups of the phenolic resin as a curing agent to the number of epoxy groups of the epoxy resin (the number of phenolic hydroxyl groups). / (The number of epoxy groups) is preferably in the range of 0.5 to 1.5. If this value is less than 0.5,
It is difficult to cause a sufficient curing reaction, while if it exceeds 1.5, the curing properties, particularly the moisture resistance, tend to deteriorate.

In the present invention, as the curing accelerator as the component (c), amine-based, phosphorus-based, boron-based, phosphorus-boron-based and the like can be used. The resin composition containing the curing agent is excellent in moisture resistance after curing, and thus is suitable for sealing semiconductor elements. The compounding amount of the curing accelerator is preferably 0.05 to 5% by weight of the entire resin component. This is because when the amount of the curing accelerator is less than 0.05 wt%, it is difficult to exert its effect sufficiently, and when it exceeds 5 wt%, the gel time becomes too short and unfilling occurs. This is because there is a fear.

In the epoxy resin composition of the present invention,
The polysiloxane that is the component (d) has the general formula (1)
It is a compound represented by these. In the general formula (1), at least one of R ¹ is a secondary or tertiary amino group represented by the general formula (2), and the rest is a hydrogen atom; a methyl group, an ethyl group, a propyl group Alkyl group such as cyclohexyl group and cyclopentyl group; aryl group such as phenyl group, naphthyl group and anisyl group; and halogen atom.

In the present invention, the molecular weight of the polysiloxane is preferably 100,000 or less,
More preferably, it is not more than 000. 100,000
If it exceeds 3, the melt viscosity of the resin composition may increase.

In consideration of the adhesion to a lead frame or the like, the amine equivalent of the polysiloxane is
It is preferably about 1,000 or less, and 1,000
If it exceeds, the adhesion effect may be reduced.

The divalent organic group X in the general formula (2) includes, for example, alkylene such as methylene and ethylene; and phenylene.

Examples of the substituent represented by the general formula (2) include those represented by the following general formula (7).

[0030]

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In the general formula (7), R ³ may be the same or different and each is a hydrogen atom; an alkyl group such as a methyl group, an ethyl group or a propyl group; a cycloalkyl group such as a cyclohexyl group or a cyclopentyl group; An aryl group such as a phenyl group, a naphthyl group, and an anisyl group; a group selected from the group consisting of halogen atoms, and X is a divalent organic group as described above.

The polysiloxane compounded as the component (d) in the epoxy resin composition of the present invention is a compound having a specific amino group introduced as described above. The polysiloxane contributes to the suppression of voids in the molded article, while the amino group has an effect of improving the adhesiveness between the resin composition and 42 alloy as a lead frame material. Particularly, since the amino group is secondary or tertiary, the storage stability is excellent without impairing the fluidity of the resin composition. Therefore, a semiconductor device using the epoxy resin composition of the present invention has good heat resistance, moisture resistance, and reflow crack resistance.

When the polysiloxane compounded in the epoxy resin composition of the present invention has a mercapto group, the adhesiveness of the resin composition to the silver-plated portion in the lead frame is improved. The reliability of the semiconductor device is further improved. Specifically, if a polysiloxane having a mercapto group introduced into at least one of R ¹ in the general formula (1) is blended, it is possible to enhance the adhesiveness between the resin composition and silver plating.

The amount of the component (d) is as follows.
The amount is preferably 0.5 to 10% by weight based on the total amount of the epoxy resin (a) and the curing agent (b). If it is less than 0.5 wt%, the effect of suppressing voids is not sufficient, while if it exceeds 10 wt%, the bending strength of the resin layer may be significantly reduced.

The polysiloxane as the component (d) may be mixed with other components in a Henschel mixer. However, in order to enhance the dispersibility in the composition, the polysiloxane is added to the molten epoxy resin or phenol resin. It is preferable to adopt a method of adding and stirring.

In the present invention, as the inorganic filler as the component (e), fused silica, crystalline silica, alumina,
Examples thereof include silicon nitride, aluminum nitride, boron nitride and mica, and these can be used alone or in combination of two or more. Note that a fused silica, a crystalline silica, or the like is particularly preferably used because a composition having a low hygroscopicity and a low melt viscosity can be obtained. The shape of fused silica or crystalline silica includes crushed silica and spherical silica, and these may be combined and combined.

In any of the inorganic fillers, the content of uranium (U) and thorium (Th) in the filler is desirably 0.5 ppb or less in order to prevent soft errors.

The shape and particle size of the inorganic filler are not particularly limited. However, if the shape is crushed,
The sharp corners of the filler may come into contact with the surface of the element to apply a large stress locally, which may cause a malfunction of the semiconductor element. From the viewpoint of preventing this, the maximum particle size of the crushed inorganic filler is preferably 75 μm or less.

The amount of the inorganic filler as described above is 50 to 94% by weight, and more preferably 70 to 94% by weight, based on the whole resin composition.
It is preferable to set it to 94 wt%. If it is less than 50 wt%, it will be difficult to obtain sufficient thermal shock resistance.
If the amount exceeds wt%, the melt viscosity of the resin composition may increase and the moldability may decrease.

Further, in addition to the above components, release agents such as natural waxes, synthetic waxes, linear fatty acids and metal salts thereof, acid amides, esters, paraffins; and carbon black, titanium dioxide and the like. A pigment; a filler surface treating agent such as a silane coupling agent; a flame retardant auxiliary such as antimony trioxide; and the like may be appropriately added.

In the epoxy resin composition of the present invention, the above-mentioned components are melt-kneaded by a heating roll, a kneader, or an extruder, mixed by a special mixer capable of pulverization, or each of these methods is appropriately used. It can be easily prepared by combining them.

In sealing a semiconductor element using the epoxy resin composition of the present invention, low pressure transfer molding is most commonly used, but is not limited thereto. That is, the semiconductor element can be sealed by any method such as injection molding, compression molding, and casting. After sealing, it is desirable to perform after-curing at a temperature of 175 ° C. or higher.

It should be noted that the semiconductor chip to be sealed in the present invention is not particularly limited, and any chip according to the purpose or use can be sealed.

Since the epoxy resin composition of the present invention contains a polysiloxane having a secondary or tertiary amino group, the epoxy resin composition has high storage stability without impairing fluidity, and has a lead frame material. The adhesion to the molded article is also significantly improved, and the generation of voids in the molded article is suppressed. In addition, since the characteristics of the epoxy resin such as electrical characteristics and moisture resistance are not impaired at all, a resin-encapsulated semiconductor device having high reliability is manufactured by sealing a semiconductor element with such an epoxy resin composition. be able to.

[0045]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail by way of examples. Note that the present invention is not limited to the following examples.

The components blended in the epoxy resin composition of this example are shown below.

Epoxy resin A: Biphenyl type epoxy resin (YX-4000H, epoxy equivalent 193 made by Yuka Shell Epoxy) Epoxy resin B: Diphenylmethane type epoxy resin (E
SLV-80XY, Nippon Steel Chemical, epoxy equivalent 19
6) Epoxy resin C: diphenylmethane type epoxy resin (G
Epoxy resin D: diphenyl ether type epoxy resin (GK-4137, manufactured by Nippon Steel Chemical; epoxy equivalent: 17)
0) Curing agent A: phenol aralkyl resin (XL-225-
4 L, manufactured by Mitsui Toatsu Chemicals, hydroxyl equivalent 170) Curing agent B: naphthol type phenol aralkyl resin (S
N-180, manufactured by Nippon Steel Chemical Co., Ltd., hydroxyl equivalent 191) Curing agent C: biphenyl type phenol aralkyl resin (M
EH-7851, manufactured by Meiwa Kasei Co., Ltd., hydroxyl equivalent 191) Curing accelerator: triphenylphosphine polysiloxane A: amino-modified polysiloxane at both terminals (molecular weight: about 1,000, amine equivalent: 480)

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Polysiloxane B: Amino-modified polysiloxane (molecular weight: about 1300, amine equivalent: 300)

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Polysiloxane C: Amino-mercapto-modified polysiloxane (molecular weight: about 1300, amine equivalent: 66)
0)

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Polysiloxane D: Amino-modified polysiloxane at both ends (molecular weight: about 1,000, amine equivalent: 510)

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Polysiloxane E: Amino-modified polysiloxane (molecular weight: about 1300, amine equivalent: 630)

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Polysiloxane F: epoxy-modified polysiloxane (molecular weight: about 1,000)

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Polysiloxane G: carboxy-modified polysiloxane (molecular weight: about 1000)

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Coupling agent: γ-glycidoxypropyltrimethoxysilane Release agent: ester wax Pigment: carbon black Inorganic filler: fused silica powder These components are blended according to the formulations shown in Tables 1 to 3 below. Thus, the epoxy resin compositions of Examples 1 to 13, Comparative Examples 1 to 7, and Reference Examples 1 and 2 were prepared. In addition, the compounding quantity in a table | surface is a weight part.

In producing the epoxy resin composition,
First, the inorganic filler was subjected to a surface treatment using a coupling agent in a Henschel mixer. Further, other components such as an epoxy resin and a curing agent are blended, respectively, to form 60 to 13
After kneading with a heating roll at 0 ° C., cooling and pulverization, an epoxy resin composition was obtained. 140 ° C
The mixture was added to an epoxy resin or a phenol resin which had been previously melted, mixed, cooled, pulverized, and added as an epoxy mixture or a phenol resin mixture.

[0056]

[Table 1]

[0057]

[Table 2]

[0058]

[Table 3]

Next, the following evaluation tests were performed on the epoxy resin compositions of Examples 1 to 13, Comparative Examples 1 to 7, and Reference Examples 1 and 2.

(1) Melt Viscosity A columnar tablet having a bottom area of 1 cm ² was prepared using 2.5 g of the powder material of each epoxy resin composition, and measured with a flow tester. Using a flow tester CFT-500A type (manufactured by Shimadzu Corporation), measurement conditions: 180 ° C., nozzle: 0.5
mmφ × 1 mm, measured with a load of 10 kg. In addition, the tablets were allowed to stand at room temperature, and the viscosity after a predetermined number of days had elapsed was measured to check the storage stability.

(2) Flexural strength and flexural modulus Using each epoxy resin composition, a test piece (10 mm × 4 m) was formed by transfer molding at 180 ° C. for 1 minute.
m × 80 mm), and after-cured at 175 ° C. for 8 hours to obtain a sample for measurement. About the obtained sample,
Distance between supporting points 64mm, crosshead speed 2mm / m
By performing a three-point bending test under the conditions of "in", the bending strength and the bending elastic modulus at room temperature were measured. further,
After the test piece was left in an atmosphere at 240 ° C. for 4 minutes, a bending test was performed under the same conditions as described above to obtain a bending strength at 240 ° C.

(3) Coefficient of thermal expansion Using each epoxy resin composition, a test piece (about 4 mm × about 4 mm ×
(About 18 mm). The obtained test piece was determined by measuring the elongation of the test piece when the temperature was raised from room temperature at 5 ° C./min under a load of 3 g.

(4) Adhesion force to lead frame Each epoxy resin composition was placed on a 42-alloy plate (0.3 mm
Was transferred to a cubic shape having a side of 2 mm at 180 ° C. for 1 minute. Using this test piece, the shear adhesion strength between the resin composition and 42 alloy was measured. Furthermore, on the plate which made the silver plating on the 42 alloy surface,
A test piece was molded in the same manner, and the shear adhesion strength between the resin composition and the silver plating was measured.

(5) Number of voids First, a package of 40 mm × 40 mm × 3.6 mm was formed by transfer molding using each epoxy resin composition. 40mm × 40mm of the obtained package
Surface was ground with a grinder, and every 0.3 mm was ground.
The number of voids having a size of 1 mm or more was counted. This was repeated four times, and a total of four times was obtained.

(6) Thermal Shock Resistance A large semiconductor chip (15 mm × 15 mm) for a thermal shock resistance test was sealed using each epoxy resin composition to prepare a package. The package was first subjected to after-curing, moisture absorption, and reflow treatment under the same conditions as those used for checking reflow resistance. Then, at -65 ° C (30
Minutes), room temperature (5 minutes), 150 ° C. (30 minutes), room temperature (5 minutes)
) Was repeated 50 to 400 cycles, and the failure occurrence rate was examined by checking the operation characteristics of the device.

(7) Reflow Crack Resistance Using each epoxy resin composition, a test device (10
(mm × 18 mm chip) was sealed by transfer molding to prepare a 13 mm × 22 mm × 1.5 mm package, and after-cured at 175 ° C. for 8 hours. Next, the package is left in an atmosphere at 85 ° C. and a relative humidity of 85% for 168 hours to perform a moisture absorption process.
Infrared reflow treatment was performed at 0 ° C. to check for cracks.

(8) Moisture Resistance Reliability A package similar to that described above for examining the reflow crack resistance was prepared, and after-curing, moisture absorbing, and
After performing the reflow treatment, the substrate was left in 127 ° C. saturated steam, and the occurrence rate of defects (leak defect, open defect) was examined.

The results are shown in Tables 4 to 9 below.

[0069]

[Table 4]

[0070]

[Table 5]

[0071]

[Table 6]

[0072]

[Table 7]

[0073]

[Table 8]

[0074]

[Table 9]

As shown in Tables 4 and 5, each of the epoxy resin compositions of the present invention (Examples 1 to 13) had an appropriate melt viscosity, and had an adhesive strength to 42 alloy of 16 MPa or more. And the number of voids in the compact is small. Particularly, a resin composition containing a polysiloxane into which a substituent having a mercapto group is introduced (Example 5)
Has excellent adhesion to silver plating in addition to these properties, reaching up to 18 MPa. Moreover, the resin layer obtained by curing the epoxy resin composition of the present invention has high bending strength.

On the other hand, as shown in Table 6, the resin composition containing no polysiloxane (Comparative Example 1)
In addition to the inferior adhesion to the 42 alloy and silver plating, the molded article has a large number of voids. In addition, the resin compositions containing the polysiloxane having a primary amino group (Comparative Examples 2 and 5) have a high melt viscosity and a sharp increase, so that the storage stability is poor. Furthermore, the resin composition (Comparative Examples 3, 4, 6, and 7) containing a polysiloxane having no amino group cannot obtain a sufficient adhesive force with 42 alloy. In addition, when the blending amount of the polysiloxane is small, the effect of suppressing the generation of voids is not sufficient, and when it is too large, a sufficiently high bending strength cannot be obtained. The results are shown respectively.

As described above, all of the resin compositions of Comparative Examples have good melting properties, high adhesion to the lead frame,
And the suppression of voids cannot be satisfied at the same time. 2
Only when a polysiloxane having a tertiary or tertiary amino group is blended, it is found that a resin composition having excellent melting properties, high adhesion to a lead frame, and capable of forming a molded article with few voids can be obtained. .

The present invention having such characteristics (Examples 1 to 1)
As shown in Tables 7 and 8, the resin-encapsulated semiconductor device sealed with the resin composition of 3) shows almost no failure even when subjected to the thermal shock resistance, reflow crack resistance, and moisture resistance reliability tests. Has not occurred. On the other hand, as shown in Table 9, the semiconductor device sealed with the resin composition containing no polysiloxane (Comparative Example 1) failed in any of the tests. Inferior, a failure occurred in 300 hours, and in 500 hours, nearly 30% of the samples were defective. Resin composition containing a polysiloxane having a primary amino group introduced therein (Comparative Example 2,
In the case of 5), since the viscosity is large, a sufficient pressure is not applied when sealing the semiconductor element, and the obtained semiconductor device has a remarkable decrease in thermal shock resistance and reflow crack resistance. Since the resin composition containing the polysiloxane having no amino group (Comparative Examples 3, 4, 6, and 7) has a low adhesive strength to the lead frame, the resulting semiconductor device has extremely low humidity resistance reliability and reflow resistance. Cracking is also poor.

The resin composition containing a small amount of polysiloxane (Reference Example 1) and the resin composition containing a large amount of polysiloxane (Reference Example 2) have the above-mentioned disadvantages. The semiconductor devices obtained by stopping are inferior in moisture resistance reliability and thermal shock resistance, respectively.

[0080]

As described in detail above, according to the present invention,
Excellent fluidity and adhesion to the lead frame,
An epoxy resin composition having less voids in a molded article is provided. By encapsulating a semiconductor element with the epoxy resin composition of the present invention, a resin-encapsulated semiconductor device having good reliability in heat shock resistance, solder reflow resistance and moisture resistance reliability can be obtained. Such a resin-sealed semiconductor device can cope with an increase in the density of an electronic device and an increase in the size of a chip, and its industrial value is extremely large.

Continuing on the front page (72) Inventor Tetsuo Okuyama 1 Tokoba Toshiba-cho, Komukai-ku, Kawasaki-shi, Kanagawa Pref.

Claims (3)

[Claims] 1. An epoxy resin, (b) a curing agent, (c) a curing accelerator, (d) a polysiloxane represented by the following general formula (1), and (e) an inorganic filler. An epoxy resin composition characterized by containing: (In the above general formula (1), at least one of R ¹ is a substituent represented by the following general formula (2), and the rest may be the same or different and include a hydrogen atom, an alkyl group, a cycloalkyl group , An aryl group, and a halogen atom, and n is 1 to 100.
It is an integer of 0. ) (In the general formula (2), at least one of R ² is an alkyl group or an aryl group, and the rest may be the same or different, and include a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, and a halogen atom. A substituent selected from the group consisting of atoms, and X is a divalent organic group.) 2. The epoxy resin composition according to claim ¹ , wherein at least one of R ¹ in the general formula (1) is an organic group having a mercapto group. 3. A semiconductor device comprising: a semiconductor element; and a resin layer encapsulating the semiconductor element, wherein the resin layer is formed of a resin.
A resin-encapsulated semiconductor device, characterized by using a cured product of the resin composition described in (1).