JPH0440287Y2 - - Google Patents
Info
- Publication number
- JPH0440287Y2 JPH0440287Y2 JP1984199101U JP19910184U JPH0440287Y2 JP H0440287 Y2 JPH0440287 Y2 JP H0440287Y2 JP 1984199101 U JP1984199101 U JP 1984199101U JP 19910184 U JP19910184 U JP 19910184U JP H0440287 Y2 JPH0440287 Y2 JP H0440287Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- filter
- resin case
- receiving
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は、可視光カツトフイルタの如きフイル
タを備えた半導体受光装置に関する。[Detailed Description of the Invention] (a) Field of Industrial Application The present invention relates to a semiconductor light receiving device equipped with a filter such as a visible light cut filter.
(ロ) 従来の技術
近年、発光素子と受光素子との組合せにより、
スイツチング回路を動作させる光半導体装置が多
く用いられている。(b) Conventional technology In recent years, by combining a light emitting element and a light receiving element,
Optical semiconductor devices that operate switching circuits are often used.
そして、この種の半導体受光装置においては、
受光特性を改善するために、各種フイルタを受光
面に装着している（例えば、電子材料1973年11月
号第64頁乃至第68頁に詳しい）。 In this type of semiconductor photodetector,
In order to improve the light-receiving characteristics, various filters are attached to the light-receiving surface (see, for example, Denshi Materials, November 1973 issue, pages 64 to 68).
従来、例えば、赤外発光素子と受光素子の組合
せに於ける受光装置に装着されている可視光カツ
トフイルタは、受光素子を収納する樹脂ケースの
受光窓に、接着剤等を用いて装着していた。 Conventionally, for example, a visible light cut filter attached to a light receiving device in a combination of an infrared light emitting element and a light receiving element was attached to the light receiving window of a resin case housing the light receiving element using adhesive or the like. .
(ハ) 考案が解決しようとする問題点
樹脂ケースにフイルタを接着剤等を用いて接着
するには、接着剤等が固化するまでの時間を要
し、生産性が悪いなどの問題があつた。(c) Problems that the invention aims to solve When attaching a filter to a resin case using an adhesive, etc., there were problems such as poor productivity as it took time for the adhesive to harden. .
(ニ) 問題点を解決するための手段
本考案は、半導体受光素子を収納する赤外線透
過性の樹脂ケースと、該樹脂ケースを介して前記
半導体受光素子の受光面の前面に配されたフイル
タとが、該フイルタの前面に当該フイルタよりも
小さい受光窓を有する赤外線不透過性の熱収縮チ
ユーブで被覆され、固定されたことを特徴とす
る。(d) Means for solving the problems The present invention includes an infrared-transmissive resin case that houses a semiconductor light-receiving element, and a filter that is arranged in front of the light-receiving surface of the semiconductor light-receiving element through the resin case. is characterized in that the front surface of the filter is covered and fixed with an infrared opaque heat shrink tube having a light receiving window smaller than the filter.
(ホ) 作 用
本考案によれば、熱収縮チユーブを被覆するこ
とにより、樹脂ケースの受光面にフイルタを装着
することができる。(E) Function According to the present invention, a filter can be attached to the light-receiving surface of the resin case by covering the heat-shrinkable tube.
(ヘ) 実施例
以下、本考案の一実施例を図面に従い説明す
る。(F) Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は本考案による半導体受光装置の平面
図、第２図は第１図のＡ−A′線断面図である。 FIG. 1 is a plan view of a semiconductor light receiving device according to the present invention, and FIG. 2 is a sectional view taken along the line A-A' in FIG.
これらの図において、１はPN接合を具えたシ
リコン単結晶からなる半導体基板、２はこの半導
体基板１の一主面に酸化処理により形成された酸
化シリコンの反射防止膜、３はこの反射防止膜２
を貫通して半導体基板１の一導電型領域と結合し
たアルミニウム等の表面電極、４は上記半導体基
板１の他の一主面の逆導電型領域とオーミツク接
触した金等の裏面電極で、かかる半導体基板１な
いし裏面電極４にて、いわゆるフオトダイオード
の受光素子６が形成される。７，８はリードフレ
ームからなる第１、第２のリード体で、前記両電
極３、４に各々接続される。１０は赤外線を透過
せしめるエポキシ樹脂からなる樹脂ケースで、樹
脂ケース１０は均質な透過性を必要とするために
トランスフアモールドにより所定形状に形成され
ている。また樹脂には、可視光を遮断する材料を
用いる方が好ましい。 In these figures, 1 is a semiconductor substrate made of silicon single crystal with a PN junction, 2 is an antireflection film of silicon oxide formed on one main surface of this semiconductor substrate 1 by oxidation treatment, and 3 is this antireflection film. 2
4 is a front electrode made of aluminum or the like that penetrates through the semiconductor substrate 1 and is coupled to one conductivity type region of the semiconductor substrate 1, and 4 is a back electrode made of gold or the like that is in ohmic contact with the opposite conductivity type region of the other main surface of the semiconductor substrate 1. A so-called photodiode light-receiving element 6 is formed on the semiconductor substrate 1 or the back electrode 4. Reference numerals 7 and 8 denote first and second lead bodies made of lead frames, which are connected to both the electrodes 3 and 4, respectively. Reference numeral 10 denotes a resin case made of epoxy resin that allows infrared rays to pass through. Since the resin case 10 requires uniform transparency, it is formed into a predetermined shape by transfer molding. Further, it is preferable to use a material that blocks visible light as the resin.
さて、本考案は、受光素子６を収納した樹脂ケ
ース１０の受光面の前面に、可視光を遮断するカ
ツトフイルタ１１を配置する。そして、樹脂ケー
ス１０とフイルタ１１とを一体にして、熱収縮チ
ユーブ１２を被覆して、加熱することにより、樹
脂ケース１０にフイルタ１１が固定される。従つ
て、樹脂ケース１０にフイルタ１１が装着された
ことになる。 Now, in the present invention, a cut filter 11 for blocking visible light is arranged in front of the light receiving surface of the resin case 10 housing the light receiving element 6. Then, the filter 11 is fixed to the resin case 10 by integrating the resin case 10 and the filter 11, covering the heat-shrinkable tube 12, and heating it. Therefore, the filter 11 is attached to the resin case 10.
また本実施例では、熱収縮チユーブ１２に赤外
線非透過型のチユーブを用いたので、熱収縮チユ
ーブ１２の受光面に受光窓１３を設けている。更
に、リード体７，８の端部に赤外線非透過性の樹
脂１４を充填し、樹脂ケース１０、フイルタ１
１、熱収縮チユーブ１２およびリード体７，８を
一体に固定している。 Further, in this embodiment, since the heat-shrinkable tube 12 is a tube that does not transmit infrared rays, the light-receiving window 13 is provided on the light-receiving surface of the heat-shrinkable tube 12. Furthermore, the ends of the lead bodies 7 and 8 are filled with infrared opaque resin 14, and the resin case 10 and the filter 1 are sealed.
1. The heat shrink tube 12 and the lead bodies 7 and 8 are fixed together.
(ト) 考案の効果
以上説明したように、本考案によれば、樹脂ケ
ースの受光面の前面にフイルタを配設し、樹脂ケ
ースとフイルタとを熱収縮チユーブで被覆するこ
とにより、極めて簡単にして、且つ短時間で樹脂
ケースにフイルタを装着することができるため、
生産性が向上するなどその実用的効果は大きい。(g) Effects of the invention As explained above, according to the invention, the filter is arranged in front of the light-receiving surface of the resin case, and the resin case and the filter are covered with a heat-shrinkable tube, thereby making it extremely simple. Because the filter can be attached to the resin case in a short time,
It has great practical effects, such as improved productivity.
図面は本考案の一実施例を示し、第１図は平面
図、第２図は第１図Ａ−A′線断面図である。
６……受光素子、１０……樹脂ケース、１１…
…フイルタ、１２……熱収縮チユーブ。
The drawings show one embodiment of the present invention, and FIG. 1 is a plan view, and FIG. 2 is a sectional view taken along the line A-A' in FIG. 6... Light receiving element, 10... Resin case, 11...
...Filter, 12...Heat shrink tube.
Claims (1)
ケースと、該樹脂ケースを介して前記半導体受光
素子の受光面の前面に配されたフイルタとが、該
フイルタの前面に当該フイルタよりも小さい受光
窓を有する赤外線不透過性の熱収縮チユーブで被
覆され、固定されたことを特徴とする半導体受光
装置。 An infrared-transmissive resin case housing a semiconductor light-receiving element, and a filter arranged in front of the light-receiving surface of the semiconductor light-receiving element through the resin case, have a light-receiving window smaller than the filter in front of the filter. What is claimed is: 1. A semiconductor light-receiving device, characterized in that the semiconductor light-receiving device is covered with an infrared-opaque heat-shrinkable tube and fixed thereto.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984199101U JPH0440287Y2 (en) | 1984-12-27 | 1984-12-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984199101U JPH0440287Y2 (en) | 1984-12-27 | 1984-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61112659U JPS61112659U (en) | 1986-07-16 |
| JPH0440287Y2 true JPH0440287Y2 (en) | 1992-09-21 |
Family
ID=30758715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984199101U Expired JPH0440287Y2 (en) | 1984-12-27 | 1984-12-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0440287Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2573087Y2 (en) * | 1989-12-28 | 1998-05-28 | 三菱マテリアル 株式会社 | Surge absorbing element |
-
1984
- 1984-12-27 JP JP1984199101U patent/JPH0440287Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61112659U (en) | 1986-07-16 |
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