JPS63197359U - - Google Patents
Info
- Publication number
- JPS63197359U JPS63197359U JP8976287U JP8976287U JPS63197359U JP S63197359 U JPS63197359 U JP S63197359U JP 8976287 U JP8976287 U JP 8976287U JP 8976287 U JP8976287 U JP 8976287U JP S63197359 U JPS63197359 U JP S63197359U
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor device
- conductive film
- transmitting
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第１図は本考案半導体装置の一実施例を示す一
部断面斜視図である。
１……半導体素子、２……パツケージ、５……
受光板、６……保護フイルム、７……導電膜。
FIG. 1 is a partially sectional perspective view showing an embodiment of the semiconductor device of the present invention. 1...Semiconductor element, 2...Package, 5...
Light receiving plate, 6... protective film, 7... conductive film.
Claims (1)
体素子を収納し、前記パツケージ凹所を透光性の
受光板で覆蓋すると共に、当該受光板表面に剥離
可能に保護フイルムを被着した半導体装置であつ
て、前記半導体素子の受光面側前方に透光性の導
電膜を塗布したことを特徴とする半導体装置。 (2) 前記透光性導電膜はシリカガラスであるこ
とを特徴とした実用新案登録請求の範囲第１項記
載の半導体装置。 (3) 前記透光性導電膜は受光板に塗布されてい
ることを特徴とした実用新案登録請求の範囲第１
項若しくは第２項記載の半導体装置。 (4) 前記透光性導電膜は半導体素子表面に透光
性パツシベーシヨン膜を挾んで塗布されているこ
とを特徴とした実用新案登録請求の範囲第１項若
しくは第２項記載の半導体装置。[Claims for Utility Model Registration] (1) A semiconductor element that performs photoelectric conversion is housed in a recess of a package, and the package recess is covered with a light-transmitting light-receiving plate, which can be peeled off onto the surface of the light-receiving plate. 1. A semiconductor device covered with a protective film, characterized in that a light-transmitting conductive film is coated on the front side of the light-receiving surface of the semiconductor element. (2) The semiconductor device according to claim 1, wherein the transparent conductive film is made of silica glass. (3) Utility model registration claim 1, characterized in that the light-transmitting conductive film is coated on a light-receiving plate.
The semiconductor device according to item 1 or 2. (4) The semiconductor device according to claim 1 or 2, wherein the light-transmitting conductive film is coated on the surface of the semiconductor element with a light-transmitting passivation film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8976287U JPS63197359U (en) | 1987-06-11 | 1987-06-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8976287U JPS63197359U (en) | 1987-06-11 | 1987-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63197359U true JPS63197359U (en) | 1988-12-19 |
Family
ID=30949033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8976287U Pending JPS63197359U (en) | 1987-06-11 | 1987-06-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63197359U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174260A (en) * | 1988-12-27 | 1990-07-05 | Nec Corp | Solid state image pickup device |
-
1987
- 1987-06-11 JP JP8976287U patent/JPS63197359U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174260A (en) * | 1988-12-27 | 1990-07-05 | Nec Corp | Solid state image pickup device |