JPH02174260A - Solid state image pickup device - Google Patents

Abstract

PURPOSE:To prevent destruction of an element due to static electricity and also prevent flare and ghost by providing a transparent electrically conductive film having antireflection function on the sealed inside surface of a transparent glass cap and connecting this transparent electrically conductive film with a particular electrode lead pin of a package. CONSTITUTION:A sealing glass member 11 having a transparent electrically conductive film with antireflection function 17 is sealed up by that an electrically conductive adhesive resin 12 formed in the periphery of the sealing glass member 11 is in close contact with a metal part 18 of a package 15. In case static electricity is charged on the sealing glass member 11 and the package 15, a transparent electrically conductive film with antireflection function 17 formed on the sealing glass member 11 and the metal part 18 of the package 15 are connected to a particular lead pin 16 to which, for example, the earth potential or a direct current potential is applied. In this way, the charged electricity is caused to escape so that a semiconductor substrate 14 is not influence. Further, the incident light reflected from the semiconductor substrate 14 is not reflected from the sealed-in inner surface side of the sealed glass member 11 owing to the transparent electrically conductive film with antireflection function 17, therefore the light is prevented from being incident on the semiconductor substrate 14 again so that flare and ghost do not appear.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state imaging device, and particularly to a solid-state imaging device in which a solid-state imaging device (bellet) is not provided with measures to prevent destruction of the device due to static electricity.

[Conventional technology]

For black-and-white devices, which are solid-state imaging devices that cannot be pasted with conventional glass filters, and for color devices, in which color filters are formed directly on the pixels of the solid-state imaging device, the glass filter is precisely positioned on the element surface and then bonded. It does not require a process of fixing with an agent, and costs can be reduced.

However, in a device without a glass filter attached, when the transparent glass cap is charged with static electricity, it is directly charged on the element surface and affects the 5i02-3t interface of the photodiode, which has no electrode formed on the surface. . As a result, excess charge is generated in the photodiode, vertical COD, etc., resulting in abnormal output, damage to the element surface, and failure to accumulate charge, which has the disadvantage of being vulnerable to static electricity.

Furthermore, as shown in FIG. 2, when the incident light passes through the transparent glass cap and is reflected on the surface of the semiconductor substrate 2,
Since the light is reflected on the inner surface of the transparent glass cap and enters the semiconductor substrate 2 again, flare and ghosts appear when an intense point light source is imaged. this is,
This is a similar drawback to devices with glass filters bonded together.

[Problem to be solved by the invention]

As mentioned above, in conventional solid-state imaging devices, when the transparent glass cap is charged with static electricity, the characteristics of the element may be abnormal or the element may be easily destroyed. Since the light is reflected from the inner surface of the encapsulation and re-enters the element surface, it has the disadvantage of causing flare and ghosting.

[Means to solve the problem]

In the solid-state imaging device of the present invention, a photosensitive cell having a photosensitive means for generating and accumulating charges according to incident light and a signal reading means for reading out a signal current corresponding to the charges from the photosensitive means is mounted on a semiconductor substrate. In a solid-state imaging device in which a solid-state imaging device formed on a main surface is mounted in a package and sealed with a transparent glass cap, the transparent glass cap has a transparent conductive film having an anti-reflection function on the enclosed inner surface side, and A transparent conductive film is electrically connected to a specific electrode lead pin of the package.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

A semiconductor substrate 14 (solid-state image pickup device) on which a photosensitive cell is mounted on a package 15 using Ag paste is connected to a package adhesive pin 16 by a bonding wire 13 (and a metallized layer (not shown)). The sealing glass 11 having the transparent conductive film 17 with anti-reflection function is connected to the conductive adhesive resin 12 formed around the sealing glass 11 and the metal part 18 of the package 15.
or tightly sealed.

When the sealing glass 11 and the package 15 are charged with static electricity, the transparent conductive film 17 with an antireflection function formed on the sealing glass 11, the conductive adhesive resin 12, and the metal part 18 of the package 15 are grounded, for example. By connecting to a specific lead pin 16 to which a potential or DC potential is applied, the charged charges will escape and will not affect the semiconductor substrate 14.

Further, the incident light reflected by the semiconductor substrate 14 is transmitted to a transparent conductive film 17 formed on the sealing glass 11 and having an anti-reflection function.
An example of a transparent conductive film with an anti-reflection function that does not reflect on the inner surface of the sealing glass 11 and cause light to enter the semiconductor substrate 14 again and cause flares and ghosts to appear is electron beam evaporation. MgFz(λ/4) In203(λ
/4) -Ce F, (λ/2) - (transparent glass cap) or approximately 130 nm thick I, 1□oq (S
(containing 3 wt% n02) is suitable.

They have good anti-reflection properties, as described in Applied Physics Ratio, Vol. 49, p. 2, 1980. The latter ■. 203 Single layer film has a transmittance of wavelength 0.4 to 0.
．． At 5 μm, it is about 80 to 90%, which is a little low, but it is still practical.

In the case of the former three-layer film, M at the periphery of the transparent glass cap
Remove the gF2 film and connect specific lead pins and In2O
It is sufficient to establish conduction with the three membranes.

Further, the transparent conductive film does not need to be provided up to the outer edge of the transparent glass cap as shown in the figure, and may not be provided in a portion of a certain size from the end.

Furthermore, instead of the adhesive resin 12, a conductive sealing material such as indium may be used.

〔Effect of the invention〕

As explained above, the present invention provides a transparent conductive film with an anti-reflection function on the transparent glass cap of a solid-state imaging device, thereby preventing destruction of the device due to static electricity and transmitting transparent incident light reflected on the device. This has the effect of preventing flare and ghosting caused by reflections off the glass cap.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view of a solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is a vertical cross-sectional view of a conventional solid-state imaging device. 11.1... Transparent glass cap, 12.2... Bonding wire, 14.4... Semiconductor substrate, 15
．． 5...Package, 16,6...Lead bin, 1
7...Transparent conductive film with anti-reflection function, 18...
Metal part.

Claims (1)

[Claims] A solid-state imaging device in which a photosensitive cell is formed on the main surface of a semiconductor substrate, the photosensitive cell having photosensitive means for generating and accumulating charges according to incident light and signal readout means for reading out a signal current according to the charges from the photosensitive means. In a solid-state imaging device in which an element is mounted in a package and sealed with a transparent glass cap, the transparent glass cap has a transparent conductive film with an anti-reflection function on the inner surface of the enclosure, and the transparent conductive film is used to identify the package. A solid-state imaging device characterized in that it is electrically connected to an electrode lead pin of