JPS6430861U - - Google Patents
Info
- Publication number
- JPS6430861U JPS6430861U JP1987126052U JP12605287U JPS6430861U JP S6430861 U JPS6430861 U JP S6430861U JP 1987126052 U JP1987126052 U JP 1987126052U JP 12605287 U JP12605287 U JP 12605287U JP S6430861 U JPS6430861 U JP S6430861U
- Authority
- JP
- Japan
- Prior art keywords
- receiving element
- thin film
- conductive thin
- light
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims 2
- 239000010408 film Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
第１図ａは本考案に係る受光素子の一実施例の
断面図、第１図ｂはその平面図、第２図は従来例
の受光素子の断面図を示す。
１……受光部、２……信号処理部、３……半導
体チツプ、４……絶縁体層、５ａ……電磁シール
ド膜、５ｂ……遮光膜、５ｃ……電極部。
FIG. 1a shows a cross-sectional view of an embodiment of a light-receiving element according to the present invention, FIG. 1b shows a plan view thereof, and FIG. 2 shows a cross-sectional view of a conventional light-receiving element. DESCRIPTION OF SYMBOLS 1... Light receiving part, 2... Signal processing part, 3... Semiconductor chip, 4... Insulator layer, 5a... Electromagnetic shielding film, 5b... Light shielding film, 5c... Electrode part.
Claims (1)
する受光素子において、光信号を電気信号に変換
する受光部上に導電性薄膜にてメツシユ状に電磁
シールド膜を形成したことを特徴とする受光素子
。 ２ 前記受光素子において、導電性薄膜がＡｌか
ら成り、受光素子内の信号処理部若しくは電極部
、またはその両方と同一に形成したことを特徴と
する実用新案登録請求の範囲第１項記載の受光素
子。[Scope of Claim for Utility Model Registration] 1. A photodetector incorporating a phototransistor, photodiode, etc., characterized in that a mesh-shaped electromagnetic shielding film is formed using a conductive thin film on the photodetection part that converts an optical signal into an electrical signal. A light-receiving element. 2. The light receiving element according to claim 1, wherein the conductive thin film is made of Al and is formed in the same manner as the signal processing section or the electrode section or both in the light receiving element. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987126052U JPS6430861U (en) | 1987-08-19 | 1987-08-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987126052U JPS6430861U (en) | 1987-08-19 | 1987-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430861U true JPS6430861U (en) | 1989-02-27 |
Family
ID=31377211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987126052U Pending JPS6430861U (en) | 1987-08-19 | 1987-08-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430861U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513070U (en) * | 1991-07-29 | 1993-02-19 | シヤープ株式会社 | Optically coupled semiconductor device |
| JPH08162650A (en) * | 1994-11-30 | 1996-06-21 | Yunitoron:Kk | Photodetector |
-
1987
- 1987-08-19 JP JP1987126052U patent/JPS6430861U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513070U (en) * | 1991-07-29 | 1993-02-19 | シヤープ株式会社 | Optically coupled semiconductor device |
| JPH08162650A (en) * | 1994-11-30 | 1996-06-21 | Yunitoron:Kk | Photodetector |
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