JPS63182548U - - Google Patents
Info
- Publication number
- JPS63182548U JPS63182548U JP7286487U JP7286487U JPS63182548U JP S63182548 U JPS63182548 U JP S63182548U JP 7286487 U JP7286487 U JP 7286487U JP 7286487 U JP7286487 U JP 7286487U JP S63182548 U JPS63182548 U JP S63182548U
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- photoelectric conversion
- film
- image sensor
- original
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は本考案一実施例の密着型イメージセン
サを示す概略断面図、第２図は従来の密着型イメ
ージセンサを示す概略断面図である。
１……透光性絶縁物基板、２……下部電極、３
……非晶質シリコン半導体、４……透明電極、６
……原稿、１０……入射光、１１……反射光、２
０……保護膜、２１……第１の保護膜、２２……
第２保護膜。
FIG. 1 is a schematic sectional view showing a contact type image sensor according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing a conventional contact type image sensor. 1... Translucent insulator substrate, 2... Lower electrode, 3
...Amorphous silicon semiconductor, 4...Transparent electrode, 6
... Original, 10 ... Incident light, 11 ... Reflected light, 2
0...Protective film, 21... First protective film, 22...
Second protective film.
Claims (1)
とを有し、 上記原稿からの反射光が上記保護膜を通つて上
記光電変換部に達する 密着型イメージセンサにおいて、 上記保護膜が、 上記光電変換部上に設けられ、非晶質シリコン
窒化膜または非晶質シリコン酸化膜から成る第１
の保護膜と、 上記第１の保護膜上に設けられ、アルミニウム
酸化物から成り、耐摩耗層を構成する第２の保護
膜と を有することを特徴とする密着型イメージセンサ
。[Claims for Utility Model Registration] The invention includes a substrate, a photoelectric conversion section formed on the substrate, and a protective film that covers the photoelectric conversion section and comes into contact with the original, and the reflected light from the original is transmitted to the protective film. In the contact image sensor, the protective film is provided on the photoelectric conversion part and is made of an amorphous silicon nitride film or an amorphous silicon oxide film.
A contact image sensor comprising: a protective film; and a second protective film, which is provided on the first protective film, is made of aluminum oxide, and constitutes a wear-resistant layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7286487U JPS63182548U (en) | 1987-05-18 | 1987-05-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7286487U JPS63182548U (en) | 1987-05-18 | 1987-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63182548U true JPS63182548U (en) | 1988-11-24 |
Family
ID=30916691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7286487U Pending JPS63182548U (en) | 1987-05-18 | 1987-05-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63182548U (en) |
-
1987
- 1987-05-18 JP JP7286487U patent/JPS63182548U/ja active Pending