JPS55157273A - Photo-driven semiconductor device - Google Patents

Photo-driven semiconductor device

Info

Publication number
JPS55157273A
JPS55157273A JP6472179A JP6472179A JPS55157273A JP S55157273 A JPS55157273 A JP S55157273A JP 6472179 A JP6472179 A JP 6472179A JP 6472179 A JP6472179 A JP 6472179A JP S55157273 A JPS55157273 A JP S55157273A
Authority
JP
Japan
Prior art keywords
main body
semiconductor main
guide member
light guide
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6472179A
Other languages
Japanese (ja)
Inventor
Hiromichi Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6472179A priority Critical patent/JPS55157273A/en
Publication of JPS55157273A publication Critical patent/JPS55157273A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase an optical coupling efficiency of a light guide and a semiconductor main body by fitting the first guide member, provided in a semiconductor main body, the second guide member provided in a sheath, thereby allowing to perform an optical alignment. CONSTITUTION:The first guide member 12 is provided on a semiconductor main body 1 having a photo signal receiving section 3, wherein a semiconductor main body 1 is hermetically sealed. Then, on the sheath 6 having a light guide leading-in hole 9, optically opposing to the semiconductor main body and fitting with the first guide member 12, the second guide member 8 is installed, wherein an optical alignment of the light guide leading-in hole 9 and a photo signal receiving section 3 is performed. Then, the first and second guide members 12 and 8 are aligned and the optical coupling efficiency of a light guide 10 and a semiconductor main body 1 is increased.
JP6472179A 1979-05-25 1979-05-25 Photo-driven semiconductor device Pending JPS55157273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6472179A JPS55157273A (en) 1979-05-25 1979-05-25 Photo-driven semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6472179A JPS55157273A (en) 1979-05-25 1979-05-25 Photo-driven semiconductor device

Publications (1)

Publication Number Publication Date
JPS55157273A true JPS55157273A (en) 1980-12-06

Family

ID=13266293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6472179A Pending JPS55157273A (en) 1979-05-25 1979-05-25 Photo-driven semiconductor device

Country Status (1)

Country Link
JP (1) JPS55157273A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3331451A1 (en) 1982-08-31 1984-03-01 Tokyo Shibaura Denki K.K., Kawasaki LIGHT-CONTROLLED SEMICONDUCTOR ELEMENT
JPS60107859A (en) * 1983-11-16 1985-06-13 Fuji Electric Corp Res & Dev Ltd Photo-driven semiconductor device
JPS60157255A (en) * 1984-01-26 1985-08-17 Mitsubishi Electric Corp Photosemiconductor device
JPS60198860A (en) * 1984-03-23 1985-10-08 Mitsubishi Electric Corp Optical semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3331451A1 (en) 1982-08-31 1984-03-01 Tokyo Shibaura Denki K.K., Kawasaki LIGHT-CONTROLLED SEMICONDUCTOR ELEMENT
JPS60107859A (en) * 1983-11-16 1985-06-13 Fuji Electric Corp Res & Dev Ltd Photo-driven semiconductor device
JPS60157255A (en) * 1984-01-26 1985-08-17 Mitsubishi Electric Corp Photosemiconductor device
JPS60198860A (en) * 1984-03-23 1985-10-08 Mitsubishi Electric Corp Optical semiconductor device

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